Determination of the Optical & Materials Properties of βFeSi2 Layers Fabricated Using Ion Beam Synthesis

1992 ◽  
Vol 260 ◽  
Author(s):  
T. D. Hunt ◽  
K. J. Reeson ◽  
R. M. Gwilliam ◽  
K. P. Homewood ◽  
R. J. Wilson ◽  
...  
Keyword(s):  
Silicon Surface ◽  
Optical Materials ◽  
Ion Beam ◽  
Dose Range ◽  
Single Crystal Silicon ◽  
Silicon Substrates ◽  
Crystal Silicon ◽  
Materials Properties ◽  
High Temperature Anneal

ABSTRACTIBS of buried α and β iron suicide layers was achieved by the implantation of 2 MeV 56Fe+ ions into (100) single crystal silicon substrates over a dose range of 3 × 1017 to 1 × 1018 cm“-2followed by a high temperature anneal. No photoluminescence was observed from the as-implanted samples which contained a discontinuous layer of βFeSi2 precipitates approximately 1.5 μm below the silicon surface. Upon annealing at 700°C, a 200 nm polycrystalline βFeSi2 layer was formed which gave a PL signal centred at 1.55 μm. After a 900°C anneal, the layer transformed to αFeSix with a resistivity of approximately 280μΩcm.

Highly oriented, textured diamond films on silicon via bias-enhanced nucleation and textured growth

1993 ◽  
Vol 8 (6) ◽  
pp. 1334-1340 ◽  
Author(s):  
B.R. Stoner ◽  
S.R. Sahaida ◽  
J.P. Bade ◽  
P. Southworth ◽  
P.J. Ellis
Keyword(s):  
Silicon Surface ◽  
Diamond Films ◽  
Single Crystal Silicon ◽  
Film Surface ◽  
Potential Effect ◽  
Structural Defects ◽  
Silicon Substrates ◽  
Electrical Characteristics ◽  
Crystal Silicon ◽  
Nucleation Stage

Highly oriented diamond films were grown on single-crystal silicon substrates. Textured films were first nucleated by a two-step process that involved the conversion of the silicon surface to an epitaxial SiC layer, followed by bias-enhanced nucleation. The nucleation stage, which produced a partially oriented diamond film, was immediately followed by a (100) textured growth process, thus resulting in a film surface where approximately 100% of the grains are epitaxially oriented relative to the silicon substrate. The diamond films were characterized by both SEM and Raman spectroscopy. Structural defects in the film are discussed in the context of their potential effect on the electrical characteristics of the resulting film.

Ion Beam Surface Modification for Achieving Rectification in Gold-Aluminum Nitride-Silicon Junctions

1993 ◽  
Vol 316 ◽  
Author(s):  
T. Stacy ◽  
B. Y. Liaw ◽  
A. H. Khan ◽  
G. Zhao ◽  
E. M. Charlson ◽  
...  
Keyword(s):  
Aluminum Nitride ◽  
Ion Beam ◽  
Single Crystal Silicon ◽  
Ion Bombardment ◽  
Low Energy ◽  
Silicon Substrates ◽  
Scanning Electron Micrographs ◽  
Electrical Measurements ◽  
Crystal Silicon ◽  
Beam Surface

ABSTRACTLow energy ion bombardment has been utilized to fabricate rectifying contacts on aluminum nitride grown on single crystal silicon substrates. Bombardment of aluminum nitride with methane was followed by sputter deposition of gold contacts. To our knowledge, this is the first report of rectifying contact formation on aluminum nitride. Scanning electron micrographs show that the initially ordered aluminum nitride surface is significantly altered with low energy methane ion beam exposure. Electrical measurements made on samples which had been partially masked during implantation indicate that rectification is a result of the ion bombardment.

Thickness determination of SmCo films on silicon substrates utilizing X-ray diffraction

2010 ◽  
Vol 25 (2) ◽  
pp. 149-153
Author(s):  
Isaac Vander ◽  
R. W. Zuneska ◽  
F. J. Cadieu
Keyword(s):  
Single Crystal Silicon ◽  
Magnetic Films ◽  
Mass Attenuation Coefficient ◽  
Silicon Substrates ◽  
Film Material ◽  
X Ray Diffraction ◽  
Crystal Silicon ◽  
X Ray ◽  
Si Substrates

This paper presents a nondestructive measurement technique for the determination of the film thicknesses of Co and SmCo based magnetic films deposited by sputtering on single-crystal silicon (100) substrates. X-ray diffraction of Cu Kα radiation has been used to measure the intensity of the (400) reflection from bare silicon substrates and as attenuated by sputter coated Co and SmCo based films on Si substrates. A four-axis research diffractometer allowed the substrate orientation to be fine adjusted to maximize the (400) diffraction intensity. The thickness of SmCo based films was in a range from 0.05 to 5 μm. Co film thicknesses on Si could be measured to a few tens of nanometers. The accuracy of the thickness measurements depends on the effective mass attenuation coefficient of the film material. For the materials considered, the thicknesses determined by the X-ray attenuation method agree within at least several percent to values determined by other methods.

Synthesis of Buried Layers of β Sic in Single Crystal Silicon

1987 ◽  
Vol 107 ◽  
Author(s):  
Karen J Reeson ◽  
Peter L F Hemment ◽  
John Stoemenos ◽  
John R Davis ◽  
George K Celler
Keyword(s):  
Single Crystal ◽  
Single Crystal Silicon ◽  
Silicon Substrates ◽  
Carbon Ions ◽  
Crystal Silicon ◽  
Implantation Temperature ◽  
High Temperature Anneal ◽  
Buried Layer ◽  
Buried Layers ◽  
High Doses

AbstractIt is demonstrated that buried layers of β SiC can be fabricated within single crystal silicon substrates by implanting high doses of energetic carbon ions. If the implantation temperature is sufficiently high >625°C then the β SiC grows epitaxially within the silicon, during implantation, using the substrate as a seed. During the subsequent high temperature anneal redistribution of the implanted species occurs to give a well defined buried layer of β SiC overlain by single crystal silicon.

TEM characterization of Au/Polysilicon interactions

1990 ◽  
Vol 48 (4) ◽  
pp. 650-651
Author(s):  
N. David Theodore ◽  
Leslie H. Allen ◽  
C. Barry Carter ◽  
James W. Mayer
Keyword(s):  
Solid Phase ◽  
Single Crystal Silicon ◽  
Chemical Vapor ◽  
Electrical Contacts ◽  
Silicon Substrates ◽  
Crystal Silicon ◽  
Transmission Electron ◽  
Polysilicon Films ◽  
The Stability

Metal/polysilicon investigations contribute to an understanding of issues relevant to the stability of electrical contacts in semiconductor devices. These investigations also contribute to an understanding of Si lateral solid-phase epitactic growth. Metals such as Au, Al and Ag form eutectics with Si. reactions in these metal/polysilicon systems lead to the formation of large-grain silicon. Of these systems, the Al/polysilicon system has been most extensively studied. In this study, the behavior upon thermal annealing of Au/polysilicon bilayers is investigated using cross-section transmission electron microscopy (XTEM). The unique feature of this system is that silicon grain-growth occurs at particularly low temperatures ∽300°C).Gold/polysilicon bilayers were fabricated on thermally oxidized single-crystal silicon substrates. Lowpressure chemical vapor deposition (LPCVD) at 620°C was used to obtain 100 to 400 nm polysilicon films. The surface of the polysilicon was cleaned with a buffered hydrofluoric acid solution. Gold was then thermally evaporated onto the samples.

A Current Conduction Mechanism in Laser Recrystallized Silicon Metal-Oxide-Semiconductor Transistors

1983 ◽  
Vol 23 ◽  
Author(s):  
Han-Sheng Lee
Keyword(s):  
Conduction Mechanism ◽  
Single Crystal Silicon ◽  
Silicon Films ◽  
Oxide Semiconductor ◽  
Silicon Substrates ◽  
Mos Transistors ◽  
Crystal Silicon ◽  
Ion Laser ◽  
Argon Ion ◽  
A Current

ABSTRACTN-channel MOS transistors were fabricated on silicon films that had been recrystallized by an argon ion laser at different power levels. These transistors showed electrical characteristics similar, but somewhat inferior to those devices fabricated on single crystal silicon substrates. These differences are attributed to the presence of trapping states at the grain boundaries of the crystallites in the recrystallized silicon. A coulombic scattering model is presented to explain these differences. In the case of films annealed at low laser power, an additional factor of nonuniform trap state distribution is invoked to explain device characteristics. This model provides an adequate explanation for the observed transport properties of transistors fabricated from recrystallized silicon films.

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