The Deformation of Polycrystalline‐Silicon Deposited on Oxide‐Covered Single Crystal Silicon Substrates

1977 ◽  
Vol 124 (11) ◽  
pp. 1776-1780 ◽  
Author(s):  
Takaya Suzuki ◽  
Akio Mimura ◽  
Takuzo Ogawa
Keyword(s):  
Single Crystal ◽  
Polycrystalline Silicon ◽  
Single Crystal Silicon ◽  
Silicon Substrates ◽  
Crystal Silicon

Electrical Properties of Polycrystalline-Silicon Thin Films for VLSI

1986 ◽  
Vol 71 ◽  
Author(s):  
T I Kamins
Keyword(s):  
Electrical Properties ◽  
Integrated Circuits ◽  
Single Crystal ◽  
Grain Boundaries ◽  
Polycrystalline Silicon ◽  
Crystalline Silicon ◽  
Single Crystal Silicon ◽  
Active Regions ◽  
Crystal Silicon ◽  
Polysilicon Film

AbstractThe electrical properties of polycrystalline silicon differ from those of single-crystal silicon because of the effect of grain boundaries. At low and moderate dopant concentrations, dopant segregation to and carrier trapping at grain boundaries reduces the conductivity of polysilicon markedly compared to that of similarly doped single-crystal silicon. Because the properties of moderately doped polysilicon are limited by grain boundaries, modifying the carrier traps at the grain boundaries by introducing hydrogen to saturate dangling bonds improves the conductivity of polysilicon and allows fabrication of moderate-quality transistors with their active regions in the polycrystalline films. Removing the grain boundaries by melting and recrystallization allows fabrication of high-quality transistors. When polysilicon is used as an interconnecting layer in integrated circuits, its limited conductivity can degrade circuit performance. At high dopant concentrations, the active carrier concentration is limited by the solid solubility of the dopant species in crystalline silicon. The current through oxide grown on polysilicon can be markedly higher than that on oxide of similar thickness grown on singlecrystal silicon because the rough surface of a polysilicon film enhances the local electric field in oxide thermally grown on it. Consequently, the structure must be controlled to obtain reproducible conduction through the oxide. The differences in the behavior of polysilicon and single-crystal silicon and the limited electrical conductivity in polysilicon are having a greater impact on integrated circuits as the feature size decreases and the number of devices on a chip increases in the VLSI era.

Protective CVD Mullite Coatings on Single-Crystal Silicon Substrates

JOM ◽  
2013 ◽  
Vol 65 (4) ◽  
pp. 567-573 ◽  
Author(s):  
Jiapeng Xu ◽  
Daniel Erickson ◽  
Sudesna Roy ◽  
Vinod Sarin
Keyword(s):  
Single Crystal ◽  
Single Crystal Silicon ◽  
Silicon Substrates ◽  
Crystal Silicon ◽  
Mullite Coatings

scholarly journals Влияние адсорбированных молекул СО на электронное состояние нанопленок иттербия, выращиваемых на кремниевых подложках

2019 ◽  
Vol 89 (7) ◽  
pp. 1086
Author(s):  
М.В. Кузьмин ◽  
М.А. Митцев
Keyword(s):  
Carbon Monoxide ◽  
Single Crystal ◽  
Single Crystal Silicon ◽  
Film Surface ◽  
Electronic Configuration ◽  
Surface Orientation ◽  
Silicon Substrates ◽  
Crystal Silicon ◽  
Adsorption Of Co ◽  
Gas Molecules

Adsorption of carbon monoxide (CO) molecules on ytterbium nanofilms with the thickness of 16 – 200 monolayers (6.1 – 76 nm) has been studied. The films are grown on single-crystal silicon substrates with the (111) surface orientation. It is shown that before the adsorption of CO molecules, ytterbium is divalent with the electronic configuration of [Xe]4f146s2. Upon the adsorption of gas molecules, a layer of trivalent ytterbium (the electronic configuration is [Xe]4f135d16s2), which is adjacent to the film surface, is formed. Evaluations of the thickness of the layer modified by adsorbed CO molecules are performed. Such evaluations have given rise to the values within 9 – 22 monolayers (3.4 – 8.4 nm).

Shallow Contact Formation of Gadolinium Silicide

1983 ◽  
Vol 25 ◽  
Author(s):  
I. C. Cheng ◽  
S. S. Lau ◽  
R. D. Thompson ◽  
K. N. Tu
Keyword(s):  
Heat Treatment ◽  
Single Crystal ◽  
Schottky Barrier Height ◽  
Single Crystal Silicon ◽  
Atomic Ratio ◽  
Silicon Substrates ◽  
Formation Temperature ◽  
Crystal Silicon ◽  
Contact Formation ◽  
Convenient Technique

ABSTRACTGadolinium silicide with its attractive features of low formation temperature of about 350°C and low Schottky barrier height on n-type single-crystal silicon substrates (ϕnB1∼O.4ev,ϕpB ∼ 0.7ev) was chosen for studying the feasibility of forming shallow uniform contacts. Samples with various compositions prepared by both bilayer evaporation with a configuration of Si(α)/Gd/Si(xtl) and coevaporation with a Si−Gd /Si(xtl)structure were used for studying the contact formation as a function of composition and heat treatment. We found that shallow contact formation can be achieved provided that the following conditions are met: (a) for bilayer evaporation, the atomic ratio of Si(α)/Gd ≥ 2 should be maintained, (b) for coevaporation, the Si to Gd atomic ratio between 1.7 and 2.0 is desired. The bilayer deposition scheme appears to be a more convenient technique to use in practice.

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