Thickness determination of SmCo films on silicon substrates utilizing X-ray diffraction

2010 ◽  
Vol 25 (2) ◽  
pp. 149-153
Author(s):  
Isaac Vander ◽  
R. W. Zuneska ◽  
F. J. Cadieu
Keyword(s):  
Single Crystal Silicon ◽  
Magnetic Films ◽  
Mass Attenuation Coefficient ◽  
Silicon Substrates ◽  
Film Material ◽  
X Ray Diffraction ◽  
Crystal Silicon ◽  
X Ray ◽  
Si Substrates

This paper presents a nondestructive measurement technique for the determination of the film thicknesses of Co and SmCo based magnetic films deposited by sputtering on single-crystal silicon (100) substrates. X-ray diffraction of Cu Kα radiation has been used to measure the intensity of the (400) reflection from bare silicon substrates and as attenuated by sputter coated Co and SmCo based films on Si substrates. A four-axis research diffractometer allowed the substrate orientation to be fine adjusted to maximize the (400) diffraction intensity. The thickness of SmCo based films was in a range from 0.05 to 5 μm. Co film thicknesses on Si could be measured to a few tens of nanometers. The accuracy of the thickness measurements depends on the effective mass attenuation coefficient of the film material. For the materials considered, the thicknesses determined by the X-ray attenuation method agree within at least several percent to values determined by other methods.

Growth of textured diamond films on Si(100) by C2H2/O2 flame method

1990 ◽  
Vol 5 (11) ◽  
pp. 2334-2336 ◽  
Author(s):  
J. Hwang ◽  
K. Zhang ◽  
B. S. Kwak ◽  
A. Erbil ◽  
Z. C. Feng
Keyword(s):  
Diamond Films ◽  
Single Crystal Silicon ◽  
X Ray Diffraction ◽  
Crystal Silicon ◽  
X Ray ◽  
Si Substrates ◽  
Deposition Area ◽  
Oxygen Gas ◽  
Flame Method ◽  
Spectroscopy Studies

Highly textured diamond thin films with (111) orientation have been successfully grown on the single crystal silicon (100) substrates by the flame method using the premixed acctylene and oxygen gas. Scanning electron microscopy (SEM), x-ray diffraction, and Raman spectroscopy studies have shown the formation of uniform diamond films with the full coverage of the deposition area on the Si substrates. An approach which leads to growing diamond films with very low graphite and/or amorphous carbon contaminations is described.

Residual stresses in a SiC whisker-reinforced alumina composite by high-temperature X-ray diffraction

1994 ◽  
Vol 9 (1) ◽  
pp. 50-53 ◽  
Author(s):  
Benjamin L. Ballard ◽  
Paul K. Predecki ◽  
Camden R. Hubbard
Keyword(s):  
Residual Stress ◽  
Single Crystal Silicon ◽  
Linear Extrapolation ◽  
X Ray Diffraction ◽  
Crystal Silicon ◽  
X Ray ◽  
Fine Grained ◽  
Silicon Carbide Whiskers ◽  
Alumina Composite ◽  
Residual Strains

Residual strains and microstresses are evaluated for both phase of a hot-pressed, fine-grained α-alumina reinforced with 25 wt% (29 vol%) single-crystal silicon carbide whiskers at temperatures from 25 to 1000 °C. The sample was maintained in a nonoxidizing environment while measurements of the interplaner spacing of alumina (146) and SiC (511 + 333) were made using X-ray diffraction methods. The residual strains were profiled at temperature increments of 250 °C from which the corresponding microstresses were calculated. Linear extrapolation of the SiC ε33 profile indicates that the strains are completely relaxed at a temperature of approximately 1470 °C. These residual stress relaxation results suggest that elevated temperature toughness and fracture strength of this composite may result from cooperative mechanisms.

Heteroepitaxial Metal Oxides on Silicon by Laser Ablation

1990 ◽  
Vol 191 ◽  
Author(s):  
D. B. Fenner ◽  
D. K. Fork ◽  
G. A. N. Connell ◽  
J. B. Boyce ◽  
F. A. Ponce ◽  
...  
Keyword(s):  
Laser Ablation ◽  
Single Crystal Silicon ◽  
Native Oxide ◽  
Silicon Substrates ◽  
X Ray Diffraction ◽  
Crystal Silicon ◽  
Ybco Films ◽  
Zero Resistance ◽  
High Degree

ABSTRACTThin epitaxial films of cubic - fluorite structured PrO2 and YSZ (yttria- stabilized zirconia) were grown on single crystal silicon substrates using the laser ablation - deposition technique. X-ray diffraction theta two - theta, omega rocking and phi scans indicate a high degree of epitaxial orientation of the films to the Si lattice. The highest quality of epitaxy was obtained with the PrO2 [111] oriented normal to Si(111) surfaces and the cubic YSZ [100] normal to Si(100) surfaces. For both PrO2 and YSZ, high epitaxial quality required the removal of the Si native oxide prior to deposition and careful control of the deposition environment. It was further found that the YSZ films on Si(100) were an excellent surface for subsequent laser ablation of YBCO films by the usual in situ process. The resistivity of this YBCO was ≈ 250 micro-ohm-cm at 300 K, extrapolated to the resistivity -temperature origin, showed a sharp transition to zero resistance at ≈ 85 K and was nearly identical to high quality YBCO films deposited on (bulk) YSZ substrates.

scholarly journals Влияние буферного слоя por-Si  на оптические свойства эпитаксиальных гетероструктур In-=SUB=-x-=/SUB=-Ga-=SUB=-1-x-=/SUB=-N/Si(111) с наноколончатой морфологией пленки

2019 ◽  
Vol 53 (1) ◽  
pp. 70
Author(s):  
П.В. Середин ◽  
Д.Л. Голощапов ◽  
Д.С. Золотухин ◽  
А.С. Леньшин ◽  
А.Н. Лукин ◽  
...  
Keyword(s):  
Buffer Layer ◽  
Emission Intensity ◽  
Molecular Beam ◽  
Single Crystal Silicon ◽  
X Ray Diffraction ◽  
Si Substrate ◽  
Crystal Silicon ◽  
X Ray ◽  
Plasma Activation ◽  
Single Crystal Silicon Substrate

AbstractIntegrated heterostructures exhibiting a nanocolumnar morphology of the In_ x Ga_1 –_ x N film are grown on a single-crystal silicon substrate ( c -Si(111)) and a substrate with a nanoporous buffer sublayer ( por -Si) by molecular-beam epitaxy with the plasma activation of nitrogen. Using a complex of spectroscopic methods of analysis, it is shown that the growth of In_ x Ga_1 –_ x N nanocolumns on the por -Si buffer layer offer a number of advantages over growth on the c -Si substrate. Raman and ultraviolet spectroscopy data support the inference about the growth of a nanocolumn structure and agree with the previously obtained X-ray diffraction (XRD) data indicative of the strained, unrelaxed state of the In_ x Ga_1 –_ x N layer. The growth of In_ x Ga_1 –_ x N nanocolumns on the por -Si layer positively influences the optical properties of the heterostructures. At the same half-width of the emission line in the photoluminescence spectrum, the emission intensity for the heterostructure sample grown on the por -Si buffer layer is ~25% higher than the emission intensity for the film grown on the c -Si substrate.

The accuracy of X-ray diffraction methods for determining mineral mixtures

1985 ◽  
Vol 49 (353) ◽  
pp. 531-538 ◽  
Author(s):  
Covadonga Brime
Keyword(s):  
Internal Standard ◽  
Diffraction Method ◽  
Mass Attenuation Coefficient ◽  
X Ray Diffraction ◽  
X Ray ◽  
Sample Composition ◽  
Empirical Determination ◽  
Mineral Mixtures ◽  
Mass Attenuation

AbstractAn X-ray diffraction method has been successfully applied to the quantitative determination of mineral mixtures. The absorptive properties of the samples and the number of components determine the analytical procedure to be used. The methods described (external standard plus empirical determination of the mass attenuation coefficient) provides an accurate and rapid alternative to the direct measurement of the mass attenuation, Compton diffusion or internal standard methods. The relative accuracy obtained is of the order of 10% at the 0.1% level, independent of the sample composition.

Life Time Predictions through X-Ray Defect Analysis of MEMS Devices

2008 ◽  
Vol 584-586 ◽  
pp. 518-522 ◽  
Author(s):  
Antonia Neels ◽  
Philippe Niedermann ◽  
Alex Dommann
Keyword(s):  
Single Crystal Silicon ◽  
Life Time ◽  
Defect Analysis ◽  
Mems Devices ◽  
X Ray Diffraction ◽  
Reciprocal Space Mapping ◽  
Crystal Silicon ◽  
Rocking Curve ◽  
X Ray ◽  
Curve Method

In single crystal silicon (SCSi) MEMS devices, crystalline imperfection is recognized to favor failure. A DRIE etched SCSi structure was built to study the crystal strain profile in dependence of the SCSi deformation by applying a mechanical force. High resolution X-ray diffraction methods such as the rocking curve method and reciprocal space mapping were used to determine the strain as well as the defect concentration in the crystal. The investigations also include the numerical simulation of deformations.

Highly Oriented Co Soft Magnetic Films on Si Substrates

1999 ◽  
Vol 562 ◽  
Author(s):  
Heng Gong ◽  
Wei Yang ◽  
Maithri Rao ◽  
David E. Laughlin ◽  
David N. Lambeth
Keyword(s):  
Magnetic Properties ◽  
Magnetic Films ◽  
Face Centered Cubic ◽  
X Ray Diffraction ◽  
Orientation Relationships ◽  
Soft Magnetic ◽  
X Ray ◽  
Si Substrates ◽  
The Face ◽  
Face Centered

ABSTRACTThin Co and Co based alloy films with the face centered cubic (FCC) structure have been epitaxially grown on single crystal Si wafers by sputter deposition. Epitaxial orientation relationships have been determined by x-ray diffraction, x-ray pole figure scans and TEM. Magnetic properties have been characterized using vibrating sampling magnetometer (VSM), torque magnetometer and BH loop tracer. Soft magnetic properties have been observed for the pure Co films.

Synthesis and Selected Micro-Mechanical Properties of Titanium Nitride Thin Films by the Pyrolysis of Tetrakis Titanium in Ammonia.

1994 ◽  
Vol 363 ◽  
Author(s):  
Y. W. Bae ◽  
W. Y. Lee ◽  
T. M. Besmann ◽  
P. J. Blau ◽  
L. Riester
Keyword(s):  
Thin Films ◽  
Titanium Nitride ◽  
Electron Spectroscopy ◽  
Single Crystal Silicon ◽  
Chemical Vapor ◽  
Silicon Substrates ◽  
X Ray Diffraction ◽  
Crystal Silicon ◽  
Transmission Electron ◽  
Chemical Vapor Deposited

AbstractThin films of titanium nitride were chemical vapor deposited on (100)-oriented single-crystal silicon substrates from tetrakis (dimethylamino) titanium, Ti((CH3)2N)4, and ammonia gas mixtures in a cold-wall reactor at 623 K and 655 Pa. The films were characterized by Auger electron spectroscopy, X-ray diffraction, and transmission electron spectroscopy. The nano-scale hardness of the film, measured by nanoindentation, was 12.7±0.6 GPa. The average kinetic friction coefficient against unlubricated, type- 440C stainless steel was determined using a computer-controlled friction microprobe to be ∼0.43.

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