CVD and Characterization of Al-Cu Metallization Thin Films

1992 ◽  
Vol 260 ◽  
Author(s):  
V. H. Houlding ◽  
H. Maxwell ◽  
S. M. Crochiere ◽  
D. L. Farrington ◽  
R. S. Rai ◽  
...  
Keyword(s):  
Thin Films ◽  
Cross Sections ◽  
Depth Profiling ◽  
Chemical Vapor ◽  
Dark Field ◽  
Adhesion Properties ◽  
Cu Films ◽  
Cu Content ◽  
Cu Metallization ◽  
Trimethylamine Alane

ABSTRACTThe chemical vapor deposition of Al-Cu thin films on Si, SiO2, and TiN substrates was examined in a vertical low pressure cold wall reactor using trimethylamine alane (TMAA1) at 20 C as the Al source. The Cu sources bis-(hexafluoroacetylacetonato)copper(H)(CuHFA), (cyclopentadienyl)copper(I) triethylphosphine (CpCuPEt3), and (hexafluoroacetylacetonato)copper(I) trimethylphosphine (HfaCuPMe3), were compared. The Cu content of the films was controlled up to“5 wt% by simply varying the temperature of the Cu source. Codeposited Al-Cu films with excellent conductivity, purity, and adhesion properties were obtained with all Cu sources. Optimal film smoothness was achieved at∼350 C. The compounds differed in the ease of control over the %Cu in the films. CuHFA exhibited a massive parasitic reaction which made control very difficult. The Cu(I) complexes showed very minor parasitic reactions. Analysis of films with high Cu content by SEM-EDS showed clear segregation of Cu and Al, consistent with the low solubility of Cu in Al. Films with >2% Cu appeared homogeneous on a μm scale by both SEM-EDS and SIMS depth profiling. TEM of film cross sections revealed a polycrystalline Al film with small (20–100 Å) Cu-rich particles dispersed throughout the Al grains. These particles exhibited bright field-dark field contrast characteristic of crystalline material.

Deposition of Tungsten Nitride thin Films from (tBuN)2w(NHtBu)2

1991 ◽  
Vol 250 ◽  
Author(s):  
Hsin-Tien Chiu ◽  
Shiow-Huey Chuang
Keyword(s):  
Thin Films ◽  
Depth Profiling ◽  
Chemical Vapor ◽  
Lattice Parameter ◽  
Gas Chromatography Mass Spectrometry ◽  
Elemental Distribution ◽  
Tungsten Nitride ◽  
Wavelength Dispersive Spectroscopy ◽  
Glass Substrates ◽  
Pressure Chemical

AbstractThe possibility of growing tungsten nitride thin films from (tBuN)2W(NHtBu)2, a single-source molecular precursor with two nitrogen to tungsten double bonds, by low pressure chemical vapor deposition (LPCVD) was investigated. Deposition of thin films on silicon and glass substrates was carried out at temperatures 500 – 650 °C in a cold-wall reactor while the precursor was vaporized at 60 – 100 °C. Elemental composition of the thin films, studied by wavelength dispersive spectroscopy (WDS), is best described as WNx (x = 0.8 – 1.8). Elemental distribution within the films, studied by Auger depth profiling, is uniform. X-ray diffraction (XRD) studies show that the films have a cubic structure with a lattice parameter a = 4.14 – 4.18 Å. A stoichiometric WN thin film has a lattice parameter a equal to 4.154 Å. Volatile products, trapped at −196°C, were analyzed by nuclear magnetic resonance (NMR) and gas chromatography-mass spectrometry (GC-MS). Isobutylene, acetonitrile, hydrogen cyanide and ammonia were detected in the condensable mixtures.

Influence of Flow Dynamics on The Morphology of CVD Aluminum Thin Films

1993 ◽  
Vol 334 ◽  
Author(s):  
Donna M. Speckman ◽  
Denise L. Leung ◽  
Jerry P. Wendt
Keyword(s):  
Thin Films ◽  
Flow Rate ◽  
Whisker Growth ◽  
Substrate Surface ◽  
Chemical Vapor ◽  
Flow Dynamics ◽  
Textured Surface ◽  
System A ◽  
Trimethylamine Alane ◽  
Surface Morphologies

AbstractAluminum thin films were deposited by chemical vapor deposition on SiO2 substrates using trimethylamine alane (TMAA) in a low pressure CVD reactor system. A high TMAA flow rate during deposition, combined with an initial burst of added argon during the nucleation of the substrate surface resulted in the growth of aluminum thin films with excellent purity and surface morphologies. Film resistivities averaged 3.4 μΩ-cm, and the average surface peak-to-valley height for each film was found to be <4% of the film thickness. The surfaces of films with thicknesses of ≤ 1 μm were extremely smooth and reflective. In contrast, the use of a high alane flow rate in the absence of any added argon resulted in the growth of films with extremely textured surface morphologies. Furthermore, films grown using an argon carrier gas, but with a slow alane flow rate, exhibited both textured surface morphologies and whisker growth.

Comparative Study of Typical Defects in III-Nitride Thin Films and Their Alloys

1997 ◽  
Vol 482 ◽  
Author(s):  
K. Dovidenko ◽  
S. Oktyabrsky ◽  
J. Narayan ◽  
V. Joshkin ◽  
M. Razeghi
Keyword(s):  
Thin Films ◽  
Mixed Type ◽  
Chemical Vapor ◽  
Type A ◽  
Growth Conditions ◽  
Dark Field ◽  
Average Density ◽  
Organic Chemical ◽  
Type B ◽  
Edge Dislocations

AbstractThe microstructure and typical defects in GaN and GaN/GaAlN thin film heterostructures grown on (0001)α-A12O3 were investigated using different transmission electron microscopy (TEM) techniques including diffraction contrast analysis, multiple dark field imaging, and highresolution TEM. The films were grown by metal-organic chemical vapor deposition (MOCVD) technique. All of the films exhibited good electrical/optical properties. Yet, films were found to be of two distinctive types in terms of the microstructure. Films of the first type (A) were found to contain high, up to the 109 cm2, density of inversion domains (IDs) as well as pure edge (b=l/3[11 20]), screw and mixed type dislocations with the average density of 109 - 1010 cm−2. Smoother surface of the film, absence of IDs, and low (down to 107 cm−2 in the device quality layers) density of screw and mixed type dislocations were found to be characteristic for the second type (B) microstructure. The majority of defects present in these B-type GaN and GaN/GaA1N thin films were found to be threading pure edge dislocations associated with low angle tilt sub-grain boundaries. Despite the 1010 cm−2 density of the edge dislocations, the films displayed the devicequality electrical characteristics. Type A and type B microstructure can be obtained by the variation of growth conditions. The correlation between the optical and structural properties are discussed.

Aluminum CVD for Interconnect Thin Films

1992 ◽  
Vol 282 ◽  
Author(s):  
Donna M. Speckman
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Titanium Oxide ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Flow Dynamics ◽  
Aluminum Films ◽  
Grain Sizes ◽  
Sensitive Function ◽  
Trimethylamine Alane

ABSTRACTAluminum thin films were deposited by chemical vapor deposition on SiO2 substrates using trimethylamine alane (TMAA) in a standard low pressure CVD reactor system, with argon as a carrier gas. Film quality and morphology were found to be a sensitive function of reactor flow dynamics. High purity films were obtained with resistivities of ∼5.0 μΩ-cm and grain sizes of 1–2 μm in diameter, but many of these films also exhibited aluminum whiskers, which caused VLSI processing problems. The CVD aluminum films exhibited conformal deposition over 0.5μm topographies, and also demonstrated electromigration lifetimes comparable to those of sputtered aluminum films. Aluminum films deposited using TMAA were also found to be selective at 90°C for titanium oxide.

Inversion Domain Boundaries in Ain and GaN Thin Films

1998 ◽  
Vol 4 (S2) ◽  
pp. 636-637
Author(s):  
K. Dovidenko ◽  
S. Oktyabrsky ◽  
J. Narayan
Keyword(s):  
Thin Films ◽  
Imaging Techniques ◽  
Chemical Vapor ◽  
Dark Field ◽  
Organic Chemical ◽  
Extended Defects ◽  
Cross Sectional ◽  
Dark Field Imaging ◽  
Aln Film ◽  
Domain Boundaries

High-resolution transmission electron microscopy (HRTEM), multislice image simulation and multiple dark field TEM imaging techniques have been used to investigate the structure of extended defects in AlN and GaN thin films grown on (0001) α-Al2O3 by metal-organic chemical vapor deposition (MOCVD). AlN layers were grown directly on the (0001) sapphire. In the case of GaN thin films, 300-500 Å AlN buffer was deposited first.Cross-sectional TEM revealed the presence of domain boundaries in these Ill-nitride films. In this study we investigated these defects by multiple dark field imaging technique and proved some of them to be IDBs lying in planes. The multiple dark field images of several adjacent domains of AlN film are shown in Fig. 1 (a, b). The images were obtained exactly in [110] zone of AlN using (0002) and (000) reflections.

Structural analysis of coexisting tetragonal and rhombohedral phases in polycrystalline Pb(Zr0.35Ti0.65)O3 thin films

2003 ◽  
Vol 18 (1) ◽  
pp. 173-179 ◽  
Author(s):  
Maxim B. Kelman ◽  
Paul C. McIntyre ◽  
Bryan C. Hendrix ◽  
Steven M. Bilodeau ◽  
Jeffrey F. Roeder ◽  
...  
Keyword(s):  
Thin Films ◽  
Depth Profiling ◽  
Chemical Vapor ◽  
Surface Region ◽  
Grazing Incidence ◽  
X Ray Diffraction ◽  
Near Surface ◽  
X Ray ◽  
Scattering Geometry ◽  
Pzt Films

Structural properties of polycrystalline Pb(Zr0.35Ti0.65)O3 (PZT) thin films grown by metalorganic chemical vapor deposition on Ir bottom electrodes were investigated. Symmetric x-ray diffraction measurements showed that as-deposited 1500 íthick PZT films are partially tetragonal and partially rhombohedral. Cross-section scanning electron microscopy showed that these films have a polycrystalline columnar microstructure with grains extending through the thickness of the film. X-ray depth profiling using the grazing-incidence asymmetric Bragg scattering geometry suggests that each grain has a bilayer structure consisting of a near-surface region in the etragonal phase and the region at the bottom electrode interface in the rhombohedral hase. The required compatibility between the tetragonal and rhombohedral phases in he proposed layered structure of the 1500 Å PZT can explain the peak shifts observed n the symmetric x-ray diffraction results of thicker PZT films.

Effect of Introducing Free Gaseous Radicals of Trichlorosilane and Ammonia Precursors on Growth and Characteristics of LPCVD a-SiNx Ultra Thin Films

2013 ◽  
Vol 829 ◽  
pp. 401-409
Author(s):  
Armin Salmasi ◽  
Eskandar Keshavarz Alamdari
Keyword(s):  
Thin Films ◽  
Growth Rate ◽  
Surface Topography ◽  
Depth Profiling ◽  
Chemical Vapor ◽  
Arrhenius Behavior ◽  
Force Microscopy ◽  
Atomic Force ◽  
Pressure Chemical ◽  
Rate Ratios

Preparation and characteristics of amorphous silicon nitride (a-SiNx) thin films deposited by low pressure chemical vapor deposition (LPCVD) are investigated. Free gaseous radicals of trichlorosilane (TCS) and ammonia (NH3) are produced by passing each of the precursor gases separately over Pt-Ir/Al2O3 catalyst at the temperature of 600 C. Kinetics studies of the LPCVD are carried out in different total pressures, NH3/TCS flow rate ratios and temperatures. Surface topography, chemical concentrations, growth rate and thickness are studied by Ellipsometry, x-ray photo-electron spectroscopy (XPS), atomic force microscopy (AFM) and auger depth profiling (ADP). Analysis of experiments indicates that at the temperatures between 730 C and 830 C, the growth rate of thin films follows an Arrhenius behavior with activation energy of 166.3 KJ.mol-1. The measured hydrogen contamination in a-SiNx ultra thin films is 1.05 at% which is 17 times lower than the corresponding contamination in the films produced by (PECVD) and 3.4 times lower than the contamination in the LPCVD thin films with silane (SiH4) or dichlorosilane (DCS) and Ammonia. The surface topography of the prepared films is smooth and uniform and the thickness varies between 23 and 101 nanometers.

Innovation and Annealed Effect of Sn-Al and Sn-Cu Composite Thin Films on the Electromagnetic Interference Shielding for the Green Materials

2011 ◽  
Vol 347-353 ◽  
pp. 547-554
Author(s):  
Fei Shuo Hung ◽  
Fei Yi Hung ◽  
Che Ming Chiang ◽  
Truan Sheng Lui
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Electromagnetic Interference ◽  
Low Frequency ◽  
Emi Shielding ◽  
Atomic Concentration ◽  
Cu Films ◽  
Cu Content ◽  
Green Materials ◽  
Cu Thin Film

Sn, Al and Cu not only possess electromagnetic interference shield efficiency, but also have the acceptable costs. In this study, sputtered Sn-Al thin films and Sn-Cu thin film were used to investigate the effect of the crystallization mechanism and film thickness on the electromagnetic interference (EMI) characteristics. In addition, the annealed microstructure, electrical conductivity and EMI of the Sn-xAl films and the Sn-xCu films were compared. The results show that Sn-Al film increased the electromagnetic interference (EMI) shielding after annealed. Sn-Cu films with higher Cu atomic concentration, the low frequency EMI shielding could not be improved. After annealing, the Sn-Cu thin film with lower Cu content possessed excellent EMI shielding at lower frequencies, but had an inverse tendency at higher frequencies.

Ultra-Thin TaN Films As Diffusion Barriers For Cu Metallization

1998 ◽  
Vol 514 ◽  
Author(s):  
Sharon S. Huang ◽  
K. N. Tu ◽  
Bingxi Sun
Keyword(s):  
Thin Films ◽  
Activation Energy ◽  
Diffusion Barrier ◽  
Large Data ◽  
Cu Films ◽  
Cu Metallization ◽  
Transmission Electron ◽  
Vlsi Technology ◽  
Electron Microscopes ◽  
20 Nm

ABSTRACTThe Cu metallization in future VLSI technology requires a liner or diffusion barrier. We have studied TaN thin Films of thickness from 5 nm to 3 nm as the diffusion barrier. We deposited sandwiched TaN/Cu/TaN thin films on oxidized Si wafers, annealed them in air with ramping temperature, and measured in-situ resistance changes. Scanning and transmission electron microscopes were used to characterize the surface and microstructure of the thin films and Rutherford backscattering spectrometer (RBS) was used to profile the elemental composition and after oxidation. The oxidation of the Cu sandwiched between TaN films of 5, 10, 20, and 30 nm occurs at 300, 400, 450 and 475°C, respectively. The activation energy of oxidation of Cu with the TaN barrier of 10, 20, and 30 nm are 1.73, 2.13, and 2.26 eV, respectively, but the 5 nm TaN was not calculated due to large data scattering. For comparison, the oxidation temperature and activation energy for bare Cu films in air are 250°C and 0.74 eV, respectively. It suggests that 20 nm of TaN is quite effective as a barrier layer. However, the reaction between Cu and the underlying SiO2/Si layers was also detected in RBS; this may arise as another serious reliability criterion to the system.

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