Influence of Flow Dynamics on The Morphology of CVD Aluminum Thin Films

1993 ◽  
Vol 334 ◽  
Author(s):  
Donna M. Speckman ◽  
Denise L. Leung ◽  
Jerry P. Wendt
Keyword(s):  
Thin Films ◽  
Flow Rate ◽  
Whisker Growth ◽  
Substrate Surface ◽  
Chemical Vapor ◽  
Flow Dynamics ◽  
Textured Surface ◽  
System A ◽  
Trimethylamine Alane ◽  
Surface Morphologies

AbstractAluminum thin films were deposited by chemical vapor deposition on SiO2 substrates using trimethylamine alane (TMAA) in a low pressure CVD reactor system. A high TMAA flow rate during deposition, combined with an initial burst of added argon during the nucleation of the substrate surface resulted in the growth of aluminum thin films with excellent purity and surface morphologies. Film resistivities averaged 3.4 μΩ-cm, and the average surface peak-to-valley height for each film was found to be <4% of the film thickness. The surfaces of films with thicknesses of ≤ 1 μm were extremely smooth and reflective. In contrast, the use of a high alane flow rate in the absence of any added argon resulted in the growth of films with extremely textured surface morphologies. Furthermore, films grown using an argon carrier gas, but with a slow alane flow rate, exhibited both textured surface morphologies and whisker growth.

Aluminum CVD for Interconnect Thin Films

1992 ◽  
Vol 282 ◽  
Author(s):  
Donna M. Speckman
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Titanium Oxide ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Flow Dynamics ◽  
Aluminum Films ◽  
Grain Sizes ◽  
Sensitive Function ◽  
Trimethylamine Alane

ABSTRACTAluminum thin films were deposited by chemical vapor deposition on SiO2 substrates using trimethylamine alane (TMAA) in a standard low pressure CVD reactor system, with argon as a carrier gas. Film quality and morphology were found to be a sensitive function of reactor flow dynamics. High purity films were obtained with resistivities of ∼5.0 μΩ-cm and grain sizes of 1–2 μm in diameter, but many of these films also exhibited aluminum whiskers, which caused VLSI processing problems. The CVD aluminum films exhibited conformal deposition over 0.5μm topographies, and also demonstrated electromigration lifetimes comparable to those of sputtered aluminum films. Aluminum films deposited using TMAA were also found to be selective at 90°C for titanium oxide.

Improvement of Surface Morphologies of Ru Thin Films by 2-Step MOCVD Process Using (2,4-Demethylpentadienyl)(Ethylcyclopentadienyl)Ruthenium and Oxygen

2007 ◽  
Vol 124-126 ◽  
pp. 41-44
Author(s):  
Beom Seok Kim ◽  
Cheol Seong Hwang ◽  
Hyeong Joon Kim
Keyword(s):  
Thin Films ◽  
Flow Rate ◽  
Film Growth ◽  
Film Formation ◽  
Chemical Vapor ◽  
Single Step ◽  
Growth Step ◽  
Step Process ◽  
Initial Nucleation ◽  
Surface Morphologies

Ru thin films were grown by metalorganic chemical vapor deposition (MOCVD) on TiN and TEOS oxide substrates at 300oC using (2,4-demethylpentadienyl)(ethylcyclopenadienyl) ruthenium [Ru(DMPD)(EtCp)] and oxygen. Instead of conventional single step process, we investigated 2-step CVD process to enhance initial nucleation rate and reduce the incubation time for film formation. This process consisted of a seeding step, where high flow rate of oxygen and low process pressure were used, and a film growth step with low O2 flow rate and high pressure. The deposited Ru films by 2-step process have smooth surface morphologies compared to those by single step process.

{10} edge dislocations in YSZ films grown on (100)MgO by PLD

1994 ◽  
Vol 52 ◽  
pp. 530-531
Author(s):  
Jason R. Heffelfinger ◽  
C. Barry Carter
Keyword(s):  
Thin Films ◽  
Semiconductor Lasers ◽  
Vapor Deposition ◽  
Substrate Surface ◽  
Laser System ◽  
Average Energy ◽  
Target Material ◽  
Chemical Vapor ◽  
Buffer Layers ◽  
Organic Chemical

Yttria-stabilized zirconia (YSZ) is currently used in a variety of applications including oxygen sensors, fuel cells, coatings for semiconductor lasers, and buffer layers for high-temperature superconducting films. Thin films of YSZ have been grown by metal-organic chemical vapor deposition, electrochemical vapor deposition, pulse-laser deposition (PLD), electron-beam evaporation, and sputtering. In this investigation, PLD was used to grow thin films of YSZ on (100) MgO substrates. This system proves to be an interesting example of relationships between interfaces and extrinsic dislocations in thin films of YSZ.In this experiment, a freshly cleaved (100) MgO substrate surface was prepared for deposition by cleaving a lmm-thick slice from a single-crystal MgO cube. The YSZ target material which contained 10mol% yttria was prepared from powders and sintered to 85% of theoretical density. The laser system used for the depositions was a Lambda Physik 210i excimer laser operating with KrF (λ=248nm, 1Hz repetition rate, average energy per pulse of 100mJ).

Observations on the Growth of YBa2Cu3O7 Thin Films at Very High Laser Fluences

1995 ◽  
Vol 388 ◽  
Author(s):  
Rand R. Biggers. ◽  
M. Grant Norton ◽  
I. Maartense ◽  
T.L. Peterson ◽  
E. K. Moser ◽  
...  
Keyword(s):  
Thin Films ◽  
Substrate Surface ◽  
Chemical Vapor ◽  
Growth Conditions ◽  
Organic Chemical ◽  
High Fluences ◽  
Laser Fluences ◽  
High Laser ◽  
High Laser Fluences ◽  
Very High

AbstractThe pulsed-laser deposition (PLD) technique utilizes one of the most energetic beams available to form thin films of the superconducting oxide YBa2Cu3O7 (YBCO). IN this study we examine the growth of YBCO at very high laser fluences (25 to 40 J/cm2); a more typical fluence for PLD would be nearer to 3 J/cm2. the use of high fluences leads to unique film microstructures which, in some cases, appear to be related to the correspondingly higher moveabilities of the adatoms. Films grown on vicinal substrates, using high laser fluences, exhibited well-defined elongated granular morphologies (with excellent transition temperature, Tc, and critical current density, Jc). Films grown on vicinal substrates using off-axis magnetron sputtering, plasma-enhanced metal organic chemical vapor deposition (PE-MOCVD), or PLD at more typical laser fluences showed some similar morphologies, but less well-defined. Under certain growth conditions, using high laser fluences with (001) oriented substrates, the YBCO films can exhibit a mixture of a- and c-axis growth where both crystallographic orientations nucleate on the substrate surface at the same time, and grow in concert. the ratio of a-axis oriented to c-axis oriented grains is strongly affected by the pulse repetition rate of the laser.

scholarly journals Ar flow-rate effect for low-resistivity Al/Ti/Al Ohmic contact to n-ZnO thin films

2019 ◽  
Vol 1 (1) ◽  
pp. 23
Author(s):  
Feri Adriyanto
Keyword(s):  
Thin Films ◽  
Flow Rate ◽  
Substrate Surface ◽  
Rate Effect ◽  
Contact Resistivity ◽  
Zno Thin Films ◽  
Sputtering Power ◽  
Specific Contact ◽  
Doped Zno ◽  
Flow Rate Effect

<p class="Abstract">The Ar flow rate effect on the electrical and optical properties of the sputtered Al-doped ZnO thins films were investigated. It was shown that a strong X-ray peak from (002) and (004) planes is dominant, suggesting that most grains have <em>c</em>-axis perpendicular to the substrate surface. The (002)-ZnO and (004)-ZnO peaks were measured at 2q = 34.12<sup>0</sup>, and 71.85<sup>0</sup>, respectively. It was also found that the growth rate of the Al-doped ZnO thin films increases when the sputtering power is increased. The transmittance of these film are strongly dependent on the sputtering power with the maximum transmittance of 92% was obtained at the sputtering power of 150 W and 50 sccm of Ar flow rate. The resistivity of the films is decreases as the Ar flow rate is increased. The lowest resistivity of 9.74 x 10<sup>-4</sup> W.cm was obtained at the films with Ar flow rate of 80 sccm. The mobility increases with the Ar flow rate increases. The carrier concentration also indicates the same pattern as the mobility. The transmittance of Al-doped ZnO thin films is also strongly dependent on the Ar flow rate. It was also observed the variation of contact resistivity of Al/Ti/Al to Al-doped n-ZnO thin films. The specific contact resistivity <em>r<sub>c</sub></em> of 1.8x10<sup>−5</sup> W.cm<sup>2</sup> was obtained at 150 nm-thick Al.</p>

Growth of Rhombohedral B12P2 Thin Films on 6H-SiC(0001) By Chemical Vapor Deposition

2003 ◽  
Vol 799 ◽  
Author(s):  
Peng Lu ◽  
J. H. Edgar ◽  
J. Pomeroy ◽  
M. Kuball ◽  
H. M. Meyer ◽  
...  
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Flow Rate ◽  
Growth Rates ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Flow Rate Ratio ◽  
Good Surface ◽  
Boron Phosphide ◽  
Moderate Growth

ABSTRACTThe parameters necessary to deposit oriented rhombohedral boron phosphide (B12P2) thin films on on-axis Si-face 6H-SiC(0001) substrates by chemical vapor deposition are reported. Ultra high purity BBr3 and PBr3 were used as reactants, with hydrogen as the carrier gas. The BBr3 to PBr3 flow rate ratio was adjusted to obtain good surface morphology of the B12P2 films. BBr3 to PBr3 ratios in the range of 1 to 1.5 produced smooth surfaces and moderate growth rates of 10μm/hr. Higher growth rates were obtained by increasing the BBr3 flow rate, but the surfaces became very rough. The c-axis of the B12P2 film was aligned with the c -axis of the substrate at temperatures between 1650°C-1700°C. The surface morphologies were investigated by SEM and the crystalline properties of the films were characterized by XRD and Raman spectroscopy.

Fabrication and characterization of ferroelectric Pb(ZrxTi1–x)O3 thin films by metalorganic chemical vapor deposition

1999 ◽  
Vol 14 (2) ◽  
pp. 487-493 ◽  
Author(s):  
Han Sang Song ◽  
Tae Song Kim ◽  
Chang Eun Kim ◽  
Hyung Jin Jung
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Flow Rate ◽  
Vapor Deposition ◽  
Metalorganic Chemical Vapor Deposition ◽  
Pyrochlore Phase ◽  
Chemical Vapor ◽  
Spectra Analysis ◽  
Pzt Thin Films ◽  
Metalorganic Chemical

Ferroelectric Pb(Zr, Ti)O3 (PZT) thin films were grown on Pt/Ti/SiO2/Si, RuO2/Pt/Ti/SiO2/Si, and Pt/MgO substrates at the substrate temperature of 600 °C by the metalorganic chemical vapor deposition (MOCVD) method. Pb(C11H19O2)2(Pb(DPM)2), Ti(OiC3H7)4, and Zr(OtC4H9)4 as source material and Ar and O2 as a carrier gas and oxidizing agent were selected, respectively. In order to investigate the effect of Zr and Ti component changes on the growth aspect of PZT thin films, Zr and Ti source materials were varied by controlling Zr and Ti flow rate. From the Rutherford backscattering spectroscopy (RBS) measurement, it was confirmed that the composition of the films, particularly Pb content, changed with the increasing Zr flow rate. In addition, the x-ray diffraction (XRD) spectra analysis showed the existence of a Pb-deficient pyrochlore phase as well as ZrO2 as a secondary phase. From these results, it is believed that the higher Zr partial pressure in the gas phase reduces the sticking of the Pb precursor to the substrate. The film with Pb:Zr:Ti = 1:0.42:0.58 showed a dielectric constant of 816 at 1 MHz. The spontaneous polarization, remanent polarization, and coercive field measured from the RT66A by applying 3.5 V were 44.1 μC/cm2, 24.4 μC/cm2, and 59.6 kV/cm, respectively. The fatigue analysis of PZT thin films with Pb:Zr:Ti = 1:0.42:0.58 at an applied voltage of Vp-p = 5.4 V showed 40% degradation on the basis of initial polarization value after 109 cycles.

Optimization of Jc for Photo-Assisted MOCVD Prepared YBCO Thin Films by Robust Design

1993 ◽  
Vol 335 ◽  
Author(s):  
P. C. Chou ◽  
Q. Zhong ◽  
Q. L. Li ◽  
A. Ignatiev ◽  
C. Y. Wang ◽  
...  
Keyword(s):  
Thin Films ◽  
Robust Design ◽  
Flow Rate ◽  
Chemical Vapor ◽  
Preparation Technique ◽  
Superconducting Thin Film ◽  
Variable Parameters ◽  
Ybco Thin Films ◽  
Thin Film Preparation ◽  
Phase Design

AbstractMetalorganic chemical vapor deposition (MOCVD) is emerging as a practical high Tc superconducting thin film preparation technique for industrial application. Intrinsically this technique involves a large number of variable parameters. This is especially critical for the quarternary or higher high Tc materials. Thus, effective methods are required to optimize the parameters for the preparation of high Tc films. A matrix experimental design named Robust Design has been employed for this purpose. The first-phase design was based on a starting knowledge of growth temperature and pressure, and annealing temperature for MOCVD preparation of YBCO thin films. A minimum lab effort of only nine deposition experiments was then used to optimize the process control parameters of precursor oven temperature, carrier gas (Ar) flow rate, O2 flow rate and N2O flow rate. The results were then followed by three confirmation depositions. The Robust Design resulted in the growth of YBCO film with Tc consistently in the range of 87.0 K to 90.2 K and Jc improved from about 1.0 × 106 A/cm2 to 3–5 × 106 A/cm2.

scholarly journals Material Structure and Mechanical Properties of Silicon Nitride and Silicon Oxynitride Thin Films Deposited by Plasma Enhanced Chemical Vapor Deposition

Surfaces ◽  
2018 ◽  
Vol 1 (1) ◽  
pp. 59-72 ◽  
Author(s):  
Zhenghao Gan ◽  
Changzheng Wang ◽  
Zhong Chen
Keyword(s):  
Thin Films ◽  
Mechanical Properties ◽  
Fracture Toughness ◽  
Silicon Nitride ◽  
Flow Rate ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Silicon Oxynitride ◽  
Flow Rates ◽  
Silicon Nitride Films

Silicon nitride and silicon oxynitride thin films are widely used in microelectronic fabrication and microelectromechanical systems (MEMS). Their mechanical properties are important for MEMS structures; however, these properties are rarely reported, particularly the fracture toughness of these films. In this study, silicon nitride and silicon oxynitride thin films were deposited by plasma enhanced chemical vapor deposition (PECVD) under different silane flow rates. The silicon nitride films consisted of mixed amorphous and crystalline Si3N4 phases under the range of silane flow rates investigated in the current study, while the crystallinity increased with silane flow rate in the silicon oxynitride films. The Young’s modulus and hardness of silicon nitride films decreased with increasing silane flow rate. However, for silicon oxynitride films, Young’s modulus decreased slightly with increasing silane flow rate, and the hardness increased considerably due to the formation of a crystalline silicon nitride phase at the high flow rate. Overall, the hardness, Young modulus, and fracture toughness of the silicon nitride films were greater than the ones of silicon oxynitride films, and the main reason lies with the phase composition: the SiNx films were composed of a crystalline Si3N4 phase, while the SiOxNy films were dominated by amorphous Si–O phases. Based on the overall mechanical properties, PECVD silicon nitride films are preferred for structural applications in MEMS devices.

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