Characteristics of Polycrystalline Copper Films Made by CVD from Cu(HFA)2

1992 ◽  
Vol 260 ◽  
Author(s):  
Do-Heyoung Kim ◽  
Robert H. Wentorf ◽  
William N. Gill
Keyword(s):  
Growth Rate ◽  
Surface Roughness ◽  
Total Pressure ◽  
Deposition Time ◽  
Film Growth ◽  
Copper Films ◽  
Polycrystalline Copper ◽  
Grain Sizes ◽  
Substrate Temperatures ◽  
Deposition Conditions

ABSTRACTThin Copper films have been deposited on various substrates by the reduction of copper bis-hexafluoroacetylacetonate, Cu(HFA)2, with hydrogen to investigate the characteristics of the films made at 2–10 torr of total pressure, substrate temperatures of 280–400 °C and precursor temperatures of 55–90 °C. Under the conditions investigated, the highest growth rate was 650 Å/min. and the resistivity of the films was routinely near 2.0 μΩ-cm at 5000 Å or more thickness. Film growth rate depended on precursor concentration and substrate temperature. RBS and AES analysis indicate that the copper deposited at 310–400°C is highly pure. SEM photographs revealed that different structures form depending on substrate kind, the deposition conditions and the deposition time. The surface roughness of the films increased with increasing thickness. The reflectivity of the copper films depends on their thickness and decreases as the grain size increases. The grain sizes in the films were about 0.1–2.0 μm and are correlated with film thickness.

Microstructures of Chemical-Vapour-Deposited Tin Films

1994 ◽  
Vol 343 ◽  
Author(s):  
Noboru Yoshikawa ◽  
Atsushi Kikuchi
Keyword(s):  
Growth Rate ◽  
High Temperature ◽  
Film Growth ◽  
Chemical Vapour ◽  
Axial Direction ◽  
Steel Tube ◽  
Gas Mixture ◽  
Tin Films ◽  
Local Deposition ◽  
Deposition Conditions

ABSTRACTA gas mixture consisting of TiCl4, H2 and N2 was fed into an externally-heated steel tube, and TiN was deposited on the inner wall by CVD. Microstuctures of the films were observed and their relationships with the preferred crystal orientations were studied. Distributions of the film growth rate and gas concentrations along the axial direction were calculated.By comparing the film microstructures with the calculated local deposition conditions, it is shown that formation of the films with (110) preferred orientation correlated with the conditions at high temperature and low partial pressure of TiCl4 on the substrate.

Laser Photochemical Vapour Deposition of Epitaxial Ge Films on GaAs from GeH4 Using NH3 as a Sensitiser

1988 ◽  
Vol 129 ◽  
Author(s):  
C.J. Kiely ◽  
C. Jones ◽  
V. Tavitian ◽  
J.G. Eden
Keyword(s):  
Growth Rate ◽  
Photoelectron Spectroscopy ◽  
Vapour Deposition ◽  
Film Growth ◽  
Hydrogen Abstraction ◽  
Auger Spectroscopy ◽  
Hydrogen Atoms ◽  
Production Of Hydrogen ◽  
Substrate Temperatures ◽  
Secondary Ion

ABSTRACTThe viability of ammonia as a sensitiser for the epitaxial growth of Ge on GaAs by laser photochemical vapour deposition (LPVD) has been investigated. Specifically NH3/GeH4/He (0.8/5/95 sccm, 5.5 Torr total pressure) mixtures have been irradiated by a 193nm ArF excimer laser in parallel geometry for substrate temperatures, Ts<400°C. As evidenced by a dramatic acceleration in Ge film growth rate, the NH3 efficiently couples the laser radiation to the GeH4 precursor molecule. The microstructures of LPVD Ge films grown with and without NH3 have been examined by TEM, and the epitaxial nature of both types of films has been verified, although some subtle differences are noted. Chemical analysis of the deposited films has been carried out using Auger spectroscopy, X-ray photoelectron spectroscopy and secondary ion mass spectroscopy. Our results show that there is little or no nitrogen incorporation into the Ge films grown in the presence of NH3, and that hydrogen contamination in our films is minimal. The beneficial effect of NH3 on the growth rate of LPVD Ge films is attributed to the photolytic production of hydrogen atoms which efficiently decompose GeH4 by hydrogen abstraction collisions.

Oxygen Atom Induced Deposition of Silicon Dioxide

1992 ◽  
Vol 282 ◽  
Author(s):  
Dimitri A. Levedakis ◽  
Gregory B. Raupp
Keyword(s):  
Silicon Dioxide ◽  
Deposition Rate ◽  
Total Pressure ◽  
Oxygen Radical ◽  
Flow Ratio ◽  
One Dimensional ◽  
Substrate Temperatures ◽  
Oxygen Discharge ◽  
Deposited Films ◽  
Deposition Conditions

ABSTRACTSilicon dioxide was deposited from tetraethylorthosilicate (TEOS) and remote microwave oxygen plasma on a heated silicon substrate in a cold-wall reactor. The deposition rate and film quality were examined as functions of substrate temperature, total pressure, absorbed plasma power and O2:TEOS flow ratio. The deposition reaction exhibited an activation energy of approximately 10 kJ/mol for substrate temperatures in the range of 323–623 K. The deposition rate reached a maximum with increasing total pressure. The rate was found to be a near-linear function of the absorbed microwave power. At fixedabsorbed power the rate reached a maximum with increasing O2:TEOS flow ratio. A one-dimensional mathematical model was developed to predict the oxygen radical concentration at the exit of the afterglow region of the oxygen discharge. Comparisons of the predicted oxygen radical concentrations with the deposition rates at corresponding deposition conditions supports the view that the overall SiO2 deposition reaction is largely controlled by the concentration of oxygen radicals. The average refractive index ofthe deposited films was 1.466 ± 0.011. Fourier transform infra-red (FTIR) transmission spectra showed significant concentrations of hydroxyls in the deposited films.

On the Surface Roughness Evolution During a-Si:H Growth

2002 ◽  
Vol 715 ◽  
Author(s):  
M.C.M. van de Sanden ◽  
A.H.M. Smets ◽  
W.M.M. Kessels
Keyword(s):  
Activation Energy ◽  
Surface Roughness ◽  
Film Growth ◽  
Chemical Deposition ◽  
Universality Class ◽  
Growth Exponent ◽  
Mbe Growth ◽  
Universality Classes ◽  
Deposition Conditions ◽  
Surface Roughness Evolution

AbstractThe surface roughness evolution during a-Si:H film growth from a SiH3 beam under purely chemical deposition conditions is discussed. The data is explained in terms of the different universality classes proposed in literature. It is argued that roughness evolution during a-Si:H growth shows great similarity with MBE growth, which belongs to a universality class studied extensively by Das Sarma and coworkers. The activation energy for surface diffusion extracted from simulating the growth exponent β vs. temperature reveals an activation energy of about 1 eV. This result suggests that the surface roughness evolution is not controlled by the weakly adsorbed SiH3 radical.

Nucleation and growth rate influence on microstructure and critical currents of TFA-YBa2Cu3O7 under low-pressure conditions

2010 ◽  
Vol 25 (12) ◽  
pp. 2371-2379 ◽  
Author(s):  
H. Chen ◽  
K. Zalamova ◽  
A. Pomar ◽  
X. Granados ◽  
T. Puig ◽  
...  
Keyword(s):  
Growth Rate ◽  
Total Pressure ◽  
Gas Flow ◽  
Film Growth ◽  
Water Pressure ◽  
Maximum Growth ◽  
Low Pressure ◽  
Critical Currents ◽  
Growth Step ◽  
Ybco Films

The effects of variable conversion parameters on the microstructure and critical currents of TFA-derived YBa2Cu3O7 (YBCO) films annealed under low-pressure conditions were investigated, accompanied by the analysis of their relationship with the nucleation process and the growth rate. It is found that non-c-axis oriented YBCO grains are formed under high supersaturation conditions, i.e., by increasing oxygen pressure, water pressure, or temperature. The optimal PH2O–PO2 window for preparation of completely c-axis oriented YBCO films expands as the total pressure rises from 50 to 100 mbar due to the decrease of supersaturation at enhanced total pressure; the corresponding maximum growth rate is only slightly increased up to 0.6 nm/s. Additionally, it is shown that the gas flow needs to be high enough to avoid random nucleation of YBCO grains. A single gas-flow–water-pressure diagram, showing simultaneously the film-growth rate, allows visualizing the cross-linked influence of processing parameters to achieve c-axis oriented YBCO films with Jc above 1 MA/cm2 in one single growth step.

The Microstructure of Copper Films Deposited by E-Beam Evaporation onto Thin Polyimide Films

1984 ◽  
Vol 40 ◽  
Author(s):  
J. T. Wetzel ◽  
D. A. Smith ◽  
G. Appleby-Mougham
Keyword(s):  
Electron Beam ◽  
Film Thickness ◽  
Substrate Temperature ◽  
Grain Growth ◽  
Film Growth ◽  
Electron Beam Evaporation ◽  
Copper Films ◽  
Polyimide Films ◽  
Deposition Rates ◽  
Substrate Temperatures

AbstractCopper was deposited by electron beam evaporation onto both freshly cleaved bare and polyimide-coated (001) NaCl at substrate temperatures of 20°, 100°, 200° and 300°C at rates of 2 and 20,Åsec−1. For all substrate temperatures and deposition rates investigated, the Volmer-Weber mode of film growth was observed for copper both on polyimide and on NaCl. Comparisons of film growth on the two substrates for a constant substrate temperature revealed differences in film thickness at which copper became continuous or formed a completely coalesced film. It was found that copper grown on polyimide formed continuous and completely coalesced films at smaller film thicknesses than on NaCI. However once a completely coalesced film was obtained, grain growth in the copper films proceeded more rapidly on NaC1 substrates than on polyimide substrates.

Semiconductor Thin Films Grown by Laser Photolysis

1982 ◽  
Vol 17 ◽  
Author(s):  
J.G. Eden ◽  
J.E. Greene ◽  
J.F. Osmundsen ◽  
D. Lubben ◽  
C.C. Abele ◽  
...  
Keyword(s):  
Activation Energy ◽  
Growth Rate ◽  
Vapor Deposition ◽  
Film Growth ◽  
Single Photon ◽  
Chemical Vapor ◽  
Intensity Dependence ◽  
Grain Sizes ◽  
Semiconductor Thin Films ◽  
Si Films

ABSTRACTThin (< 1.2 μpm) Ge and Si films have been grown with rates up to 3.6 μm/hr by laser-induced chemical vapor deposition (LCVD) on a variety of substrates. Germanium films grown on amorphous SiO2 (quartz) by photodissociating GeH4 in He at 248 nm (KrF laser) exhibit grain sizes of 0.3 – 0.5 μm that increase only slightly up to the pryolytic threshold for GeH4 (280°C). On (100) NaCl, however, Ge films grown at a substrate temperature of 120°C are expitaxial. The activation energy for the LCVD growth of Ge films (from GeH4) on SiO2 is measured to be 85 ± 20 meV which suggests that germanium is arriving at the substrate in atomic form. The wavelength and intensity dependence of the initial film growth rate supports the conclusion that this process is photolytic and is initiated by the absorption of a single photon.

Determination of Film Growth Rate and Surface Roughness using In-Situ Pyrometry

1996 ◽  
Vol 441 ◽  
Author(s):  
Z. Yina ◽  
Z. L. Akkerman ◽  
W. Smith ◽  
R. Gat
Keyword(s):  
Growth Rate ◽  
Surface Roughness ◽  
Film Growth ◽  
Apparent Temperature ◽  
Diamond Growth ◽  
Growth Surface ◽  
True Temperature ◽  
Film Growth Rate ◽  
Film Substrate

AbstractA model for the infrared radiation emitted by a film/substrate system has been developed which includes both the effects of interference in the growing film and of scattering from its rough growth surface. Predictions of the model for the time-dependence of the apparent temperature Tapp of the film/substrate system measured in-situ by both one-color and two-color infrared pyrometers are presented for the case of diamond growth on Si. Using this model, the following information can be obtained from in-situ pyrometric results in real time: the true temperature of the film/substrate system, the instantaneous film growth rate, and the rms surface roughness σ of the film.

Feedback control of growth rate and surface roughness in thin film growth

AIChE Journal ◽  
2003 ◽  
Vol 49 (8) ◽  
pp. 2099-2113 ◽  
Author(s):  
Yiming Lou ◽  
Panagiotis D. Christofides
Keyword(s):  
Thin Film ◽  
Growth Rate ◽  
Surface Roughness ◽  
Feedback Control ◽  
Film Growth ◽  
Thin Film Growth
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