Microstructures of Chemical-Vapour-Deposited Tin Films

1994 ◽  
Vol 343 ◽  
Author(s):  
Noboru Yoshikawa ◽  
Atsushi Kikuchi
Keyword(s):  
Growth Rate ◽  
High Temperature ◽  
Film Growth ◽  
Chemical Vapour ◽  
Axial Direction ◽  
Steel Tube ◽  
Gas Mixture ◽  
Tin Films ◽  
Local Deposition ◽  
Deposition Conditions

ABSTRACTA gas mixture consisting of TiCl4, H2 and N2 was fed into an externally-heated steel tube, and TiN was deposited on the inner wall by CVD. Microstuctures of the films were observed and their relationships with the preferred crystal orientations were studied. Distributions of the film growth rate and gas concentrations along the axial direction were calculated.By comparing the film microstructures with the calculated local deposition conditions, it is shown that formation of the films with (110) preferred orientation correlated with the conditions at high temperature and low partial pressure of TiCl4 on the substrate.

Strain Accommodation and Relaxation Mechanisms in Epitaxially Grown Manganites

2001 ◽  
Vol 696 ◽  
Author(s):  
Marie-José Casanove ◽  
Pierre Baulès ◽  
Christian Roucau ◽  
David Magnoux ◽  
Jean-François Bobo ◽  
...  
Keyword(s):  
Growth Rate ◽  
High Temperature ◽  
Epitaxial Growth ◽  
Slow Growth ◽  
The State ◽  
Misfit Dislocations ◽  
Orthorhombic Distortion ◽  
Strained Layers ◽  
Slow Growth Rate ◽  
Deposition Conditions

AbstractEpitaxial growth of La1-x(SrorCa)xMnO3 manganites (LSMO or LCMO) has been successfully achieved on SrTiO3 (001) and MgO(001) substrates. We report the influence of the deposition conditions, in particular growth rate, annealing and nature of the substrate, on the state of strain in the manganite layers. Fully strained layers are reported at very slow growth rate on SrTiO3 substrates while misfit dislocations are clearly observed in layers grown on MgO and alsoin layers grown on SrTiO3, after annealing at high temperature. Besides, evidence is given for a rhombohedral (respectively orthorhombic) distortion relaxation in LSMO (respectively LCMO) layers. The microstructure of the manganite layers is analyzed taking into account their non-isomorphic growth on the cubic substrates.

scholarly journals Growth Rate of Chemical-Vapour-Deposited TiN Films in a Tubular Reactor

1992 ◽  
Vol 56 (10) ◽  
pp. 1132-1136 ◽  
Author(s):  
Noboru Yoshikawa ◽  
Haruhiko Aikawa ◽  
Atsushi Kikuchi
Keyword(s):  
Growth Rate ◽  
Chemical Vapour ◽  
Tubular Reactor ◽  
Tin Films

scholarly journals Growth Rate of TiN Films by Chemical-Vapour-Deposition

1994 ◽  
Vol 58 (4) ◽  
pp. 442-447 ◽  
Author(s):  
Noboru Yoshikawa ◽  
Kazuyuki Higashino ◽  
Atsushi Kikuchi
Keyword(s):  
Growth Rate ◽  
Chemical Vapour Deposition ◽  
Vapour Deposition ◽  
Chemical Vapour ◽  
Tin Films

Deposition of Titanium Nitride Thin Films onto Silicon by RF Reactive Magnetron Sputtering

2009 ◽  
Vol 609 ◽  
pp. 117-121 ◽  
Author(s):  
Nadia Saoula ◽  
K. Henda ◽  
R. Kesri
Keyword(s):  
Magnetron Sputtering ◽  
Film Growth ◽  
Rf Magnetron Sputtering ◽  
Gas Mixture ◽  
Substrate Bias Voltage ◽  
Tin Films ◽  
Force Microscopy ◽  
Atomic Force ◽  
Ar Gas ◽  
Deposited Films

The properties of TiN films deposited by magnetron sputtering are related to their deposition conditions. The elaboration of our films has been carried out by RF-Magnetron Sputtering (13.56 MHz) from a titanium metallic target in reactive N2/Ar gas mixture. The main variables investigated are the composition of the Ar/N2 gas mixture, the total pressure, the deposition time, the discharge power but in this work the attention is given to the effect of the substrate bias voltage. A study is carried out the effects of these variations on the film growth rates, the film thickness and the properties of TiN films. The deposited films were characterized by energy dispersive spectroscopy (EDS), and observed by means of atomic force microscopy (AFM).

Characteristics of Polycrystalline Copper Films Made by CVD from Cu(HFA)2

1992 ◽  
Vol 260 ◽  
Author(s):  
Do-Heyoung Kim ◽  
Robert H. Wentorf ◽  
William N. Gill
Keyword(s):  
Growth Rate ◽  
Surface Roughness ◽  
Total Pressure ◽  
Deposition Time ◽  
Film Growth ◽  
Copper Films ◽  
Polycrystalline Copper ◽  
Grain Sizes ◽  
Substrate Temperatures ◽  
Deposition Conditions

ABSTRACTThin Copper films have been deposited on various substrates by the reduction of copper bis-hexafluoroacetylacetonate, Cu(HFA)2, with hydrogen to investigate the characteristics of the films made at 2–10 torr of total pressure, substrate temperatures of 280–400 °C and precursor temperatures of 55–90 °C. Under the conditions investigated, the highest growth rate was 650 Å/min. and the resistivity of the films was routinely near 2.0 μΩ-cm at 5000 Å or more thickness. Film growth rate depended on precursor concentration and substrate temperature. RBS and AES analysis indicate that the copper deposited at 310–400°C is highly pure. SEM photographs revealed that different structures form depending on substrate kind, the deposition conditions and the deposition time. The surface roughness of the films increased with increasing thickness. The reflectivity of the copper films depends on their thickness and decreases as the grain size increases. The grain sizes in the films were about 0.1–2.0 μm and are correlated with film thickness.

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