Determination of Film Growth Rate and Surface Roughness using In-Situ Pyrometry

1996 ◽  
Vol 441 ◽  
Author(s):  
Z. Yina ◽  
Z. L. Akkerman ◽  
W. Smith ◽  
R. Gat
Keyword(s):  
Growth Rate ◽  
Surface Roughness ◽  
Film Growth ◽  
Apparent Temperature ◽  
Diamond Growth ◽  
Growth Surface ◽  
True Temperature ◽  
Film Growth Rate ◽  
Film Substrate

AbstractA model for the infrared radiation emitted by a film/substrate system has been developed which includes both the effects of interference in the growing film and of scattering from its rough growth surface. Predictions of the model for the time-dependence of the apparent temperature Tapp of the film/substrate system measured in-situ by both one-color and two-color infrared pyrometers are presented for the case of diamond growth on Si. Using this model, the following information can be obtained from in-situ pyrometric results in real time: the true temperature of the film/substrate system, the instantaneous film growth rate, and the rms surface roughness σ of the film.

scholarly journals Properties and Mechanism of PEALD-In2O3 Thin Films Prepared by Different Precursor Reaction Energy

Nanomaterials ◽  
2021 ◽  
Vol 11 (4) ◽  
pp. 978
Author(s):  
Ming-Jie Zhao ◽  
Zhi-Xuan Zhang ◽  
Chia-Hsun Hsu ◽  
Xiao-Ying Zhang ◽  
Wan-Yu Wu ◽  
...  
Keyword(s):  
Growth Rate ◽  
Substrate Temperature ◽  
Film Growth ◽  
Atomic Layer ◽  
Amorphous Structure ◽  
Reaction Energy ◽  
Film Growth Rate ◽  
In2o3 Film ◽  
Intermediate Temperature Range ◽  
Layer Deposition

Indium oxide (In2O3) film has excellent optical and electrical properties, which makes it useful for a multitude of applications. The preparation of In2O3 film via atomic layer deposition (ALD) method remains an issue as most of the available In-precursors are inactive and thermally unstable. In this work, In2O3 film was prepared by ALD using a remote O2 plasma as oxidant, which provides highly reactive oxygen radicals, and hence significantly enhancing the film growth. The substrate temperature that determines the adsorption state on the substrate and reaction energy of the precursor was investigated. At low substrate temperature (100–150 °C), the ratio of chemically adsorbed precursors is low, leading to a low growth rate and amorphous structure of the films. An amorphous-to-crystalline transition was observed at 150–200 °C. An ALD window with self-limiting reaction and a reasonable film growth rate was observed in the intermediate temperature range of 225–275 °C. At high substrate temperature (300–350 °C), the film growth rate further increases due to the decomposition of the precursors. The resulting film exhibits a rough surface which consists of coarse grains and obvious grain boundaries. The growth mode and properties of the In2O3 films prepared by plasma-enhanced ALD can be efficiently tuned by varying the substrate temperature.

scholarly journals Effect of Voltage Pulse Width and Synchronized Substrate Bias in High-Power Impulse Magnetron Sputtering of Zirconium Films

Coatings ◽  
2020 ◽  
Vol 11 (1) ◽  
pp. 7
Author(s):  
Chin-Chiuan Kuo ◽  
Chun-Hui Lin ◽  
Jing-Tang Chang ◽  
Yu-Tse Lin
Keyword(s):  
Growth Rate ◽  
Magnetron Sputtering ◽  
High Power ◽  
Pulse Width ◽  
Film Growth ◽  
Highly Charged Ions ◽  
Argon Pressure ◽  
Hexagonal Prism ◽  
Film Growth Rate ◽  
Charged Ions

The Zr film microstructure is highly influenced by the energy of the plasma species during the deposition process. The influences of the discharge pulse width, which is the key factor affecting ionization of sputtered species in the high-power impulse magnetron sputtering (HiPIMS) process, on the obtained microstructure of films is investigated in this research. The films deposited at different argon pressure and substrate biasing are compared. With keeping the same average HiPIMS power and duty cycle, the film growth rate of the Zr film decreases with increasing argon pressure and enhancing substrate biasing. In addition, the film growth rate decreases with the elongating HiPIMS pulse width. For the deposition at 1.2 Pa argon, extending the pulse width not only intensifies the ion flux toward the substrate but also increases the fraction of highly charged ions, which alter the microstructure of films from individual hexagonal prism columns into a tightly connected irregular column. Increasing film density leads to higher hardness. Sufficient synchronized negative substrate biasing and longer pulse width, which supports higher mobility of adatoms, causes the preferred orientation of hexagonal α-phase Zr films from (0 0 0 2) to (1 0 1¯ 1). Unlike the deposition at 1.2 Pa, highly charged ions are also found during the short HiPIMS pulse width at 0.8 Pa argon.

Island Formation of SiC Film on Striated Si(001) Substrates

2008 ◽  
Vol 600-603 ◽  
pp. 227-230 ◽  
Author(s):  
Yoshimine Kato ◽  
Kazuo Sakumoto
Keyword(s):  
Growth Rate ◽  
Film Growth ◽  
Nucleation Site ◽  
The Other ◽  
Film Growth Rate ◽  
Surface Nucleation ◽  
Site Density ◽  
Other Hand ◽  
Sic Film ◽  
Nucleation Site Density

SiC growth on as-received and striated Si(001) substrates was studied. SiC films were grown by pulsed-jet chemical vapor deposition using monomethylsilane as a gas source at 780°C. Two kinds of Si surfaces were prepared. One was an as-received Si(001) surface and the other was an striated (scratched) Si(001) surface. It was found that nucleation rate of SiC is quite different between these two kinds of surfaces. The film growth rate was very low for the as-received Si(001) surface compared with the striated surface, and after 8 hours of growth hardly any film was grown and only square-shaped islands were observed. On the other hand, for the undulant substrate about 100nm thick 3C-SiC film was grown after 8 hours of deposition. This film growth rate difference appears to be due to the difference in density of nucleation sites. For the as-received Si(001) surface, nucleation site density appears to be quite small due to the atomically flat surface. On the other hand, for the undulant surface, nucleation site density was large enough for the film to grow faster.

Quantitative In Situ Growth Measurements of Chlorine-Activated Homoepitaxial Diamond Cvd

1994 ◽  
Vol 349 ◽  
Author(s):  
Chenyu Pan ◽  
John L. Margrave ◽  
Robert H. Hauge
Keyword(s):  
Growth Rate ◽  
Substrate Temperature ◽  
Growth Rates ◽  
Diamond Growth ◽  
Flow Rates ◽  
Temperature Range ◽  
Quantitative Studies ◽  
Growth Activation ◽  
Lower Temperature

ABSTRACTIn situ quantitative studies of the effects of substrate temperature, methane and chlorine flow rates on homoepitaxial diamond growth rates on (110) surfaces in a chlorine-activated diamond CVD reactor have been carried out using a Fizeau interferometer. The temperature dependence of diamond growth rates was found to display three distinct growth activation energies, ranging from 9±2 kcal/mol in the substrate temperature of 750-950°C, to 3.2±0.2 kcal/mol in the temperature range of 300-650°C, followed by 1.2±0.2 kcal/mol in the temperature range of 102-250°C. Atomic hydrogen is believed to be the dominant activating species in the highest temperature range, and atomic chlorine is believed to be the dominant species in the lower temperature regions. Studies of the methane flow effect on diamond growth rates revealed a linearity, indicating that the diamond growth rate was of the first order in methane flows. Diamond growth rates were also found to increase linearly with the chlorine flow. At high chlorine flow rates, however, an accelerated diamond growth rate was observed. Discussion is given to explain the observed results.

scholarly journals A SIMPLE SOLID-ON-SOLID MODEL OF EPITAXIAL FILM GROWTH: SURFACE ROUGHNESS AND DYNAMICS

1999 ◽  
Vol 10 (04) ◽  
pp. 645-657 ◽  
Author(s):  
K. MALARZ ◽  
A. Z. MAKSYMOWICZ
Keyword(s):  
Surface Roughness ◽  
Film Growth ◽  
Growth Models ◽  
Limited Range ◽  
Growth Exponent ◽  
Growth Surface ◽  
Model Calculations ◽  
Surface Migration ◽  
Two Factors ◽  
Epitaxial Film Growth

The random deposition model must be enhanced to reflect the variety of surface roughness due to some material characteristics of the film growing by vacuum deposition or sputtering. The essence of the computer simulation in this case is to account for possible surface migration of atoms just after the deposition, in connection with the binding energy between atoms (as the mechanism provoking the diffusion) and/or diffusion energy barrier. The interplay of these two factors leads to different morphologies of the growing surfaces, from flat and smooth ones to rough and spiky ones. In this paper, we extended our earlier calculation by applying an extra diffusion barrier at the edges of terrace-like structures, known as the Ehrlich–Schwoebel barrier. It is experimentally observed that atoms avoid descending when the terrace edge is approached, and these barriers mimic this tendency. Results of our Monte Carlo computer simulations are discussed in terms of surface roughness, and compared with other model calculations and some experiments from literature. The power law of the surface roughness σ against film thickness t was confirmed. The nonzero minimum value of the growth exponent β near 0.2 was obtained which is due to the limited range of the surface diffusion and the Ehrlich–Schwoebel barrier. Observations for different diffusion ranges are also discussed. The results are also confirimed with some deterministic growth models.

On the optimization of a dc arcjet diamond chemical vapor deposition reactor

1996 ◽  
Vol 11 (3) ◽  
pp. 694-702 ◽  
Author(s):  
S. W. Reeve ◽  
W. A. Weimer ◽  
D. S. Dandy
Keyword(s):  
Growth Rate ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Film Growth ◽  
Chemical Vapor ◽  
Diamond Growth ◽  
Methyl Radical ◽  
Chemical Kinetic Model ◽  
Model Calculations ◽  
Chemical Vapor Deposition Reactor

Based on results from chemical kinetic model calculations, a method to improve diamond film growth in a dc arcjet chemical vapor deposition reactor has been developed. Introducing the carbon source gas (CH4) into an Ar/H2 plasma in close proximity to the substrate produced diamond films exhibiting simultaneous improvements in quality and mass deposition rates. These improvements result from a reduced residence time of the methane in the plasma which inhibits the hydrocarbon chemistry in the gas from proceeding significantly beyond methyl radical production prior to encountering the substrate. Improvements in growth rate were modest, increasing by only a factor of two. Optical emission actinometry measurements indicate that the flux of atomic hydrogen across the stagnation layer to the substrate is mass diffusion limited. Since diamond growth depends upon the flux of atomic H to the substrate, these results suggest that under the conditions examined here, a low atomic H flux to the substrate poses an upper limit on the attainable diamond growth rate.

A numerical study on heat transfer and film growth rate of InP and GaAs MOCVD process

2005 ◽  
Vol 276 (3-4) ◽  
pp. 431-438 ◽  
Author(s):  
Ik-Tae Im ◽  
Masakazu Sugiyama ◽  
Yukihiro Shimogaki ◽  
Yoshiyaki Nakano
Keyword(s):  
Heat Transfer ◽  
Growth Rate ◽  
Film Growth ◽  
Numerical Study ◽  
Film Growth Rate
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