The Microstructure of Copper Films Deposited by E-Beam Evaporation onto Thin Polyimide Films

1984 ◽  
Vol 40 ◽  
Author(s):  
J. T. Wetzel ◽  
D. A. Smith ◽  
G. Appleby-Mougham
Keyword(s):  
Electron Beam ◽  
Film Thickness ◽  
Substrate Temperature ◽  
Grain Growth ◽  
Film Growth ◽  
Electron Beam Evaporation ◽  
Copper Films ◽  
Polyimide Films ◽  
Deposition Rates ◽  
Substrate Temperatures

AbstractCopper was deposited by electron beam evaporation onto both freshly cleaved bare and polyimide-coated (001) NaCl at substrate temperatures of 20°, 100°, 200° and 300°C at rates of 2 and 20,Åsec−1. For all substrate temperatures and deposition rates investigated, the Volmer-Weber mode of film growth was observed for copper both on polyimide and on NaCl. Comparisons of film growth on the two substrates for a constant substrate temperature revealed differences in film thickness at which copper became continuous or formed a completely coalesced film. It was found that copper grown on polyimide formed continuous and completely coalesced films at smaller film thicknesses than on NaCI. However once a completely coalesced film was obtained, grain growth in the copper films proceeded more rapidly on NaC1 substrates than on polyimide substrates.

Residual Stress and Dielectric Property of Al2O3 Films on N-Type Si-(100) Substrate

2011 ◽  
Vol 415-417 ◽  
pp. 1863-1866
Author(s):  
Ying Dong Pu ◽  
Wu Tang ◽  
Yi Peng Chao ◽  
Yu Tong Yang
Keyword(s):  
Residual Stress ◽  
Electron Beam ◽  
Dielectric Property ◽  
Aluminum Oxide ◽  
Substrate Temperature ◽  
Electron Beam Evaporation ◽  
Important Condition ◽  
Condition C ◽  
Capacitance Meter ◽  
Substrate Temperatures

The aluminum oxide (Al2O3) films are grown on n-type Si-(100) substrate by electron beam evaporation depending on the different substrate temperatures. The residual stress, I-V and C-V characteristics are investigated by wafer stress analyzer and capacitance meter, respectively. The results show that different temperature is important condition to the preparation of Al2O3 film. It can be concluded that the residual stress increases with increasing the substrate temperature, while the stress decreases after annealing in N2 condition. C-V characteristic curves reveal that capacitance increases while the temperature increases. It also can be found that capacitance becomes smaller in the same substrate temperature at various frequencies of 100K, 500K and 1M.

Properties of Al Films Depend on Substrate Temperature by DC Magnetron Sputter Deposition

2013 ◽  
Vol 662 ◽  
pp. 413-416
Author(s):  
Yi Shen ◽  
Ruo He Yao
Keyword(s):  
Grain Size ◽  
Film Thickness ◽  
Substrate Temperature ◽  
Sheet Resistance ◽  
Cross Section ◽  
Sputter Deposition ◽  
Surface Profiling ◽  
Magnetron Sputter Deposition ◽  
Magnetron Sputter ◽  
Substrate Temperatures

Al films were prepared by DC magnetron sputter deposition at different substrate temperatures. The sheet resistance of the films was measured by four point probe sheet resistance meter, and the film thickness, which was obtained by surface profiling system. The surface and cross-section morphology of the films was observed by AFM and FESEM. As a result, the resistivity of the films decreases obviously as the substrate temperature increases gradually. The higher substrate temperature is, the rougher the films surface is and the larger the grain size is.

Low Temperature Deposited High Quality ITO Films Prepared by E-Beam Evaporation

1990 ◽  
Vol 187 ◽  
Author(s):  
C. S. Chang ◽  
J. C. Wang ◽  
L. C. Kuo
Keyword(s):  
Electron Beam ◽  
Low Temperature ◽  
Substrate Temperature ◽  
Optimal Condition ◽  
Deposition Rate ◽  
Oxygen Pressure ◽  
Electron Beam Evaporation ◽  
Film Properties ◽  
High Quality ◽  
Ito Films

AbstractAn electron beam evaporation method has been used to prepare tin doped indium oxide (ITO) films with 95 wt.% In2O3 and 5 wt.% SnO2 in an oxygen atmosphere. It was found that the deposition rate and oxygen pressure strongly influence the film properties when the substrate temperature was lower than 200°C. In an optimal condition, highly transparent (transmittance ˜ 90% at wavelength 570 nm) and conductive (resistivity – 3×10−4Ω-cm) films of thickness around 2000 Å at substrate temperature as low as 180°C can be obtained.

Optical Properties of Amorphous Silicon-Yttrium Films

2005 ◽  
Vol 862 ◽  
Author(s):  
Shmyryeva Alexandra N. ◽  
Semikina Tetyana V.
Keyword(s):  
Optical Properties ◽  
Electron Beam ◽  
Amorphous Silicon ◽  
Optical Microscopy ◽  
Electron Beam Evaporation ◽  
Mixed Phase ◽  
Ir Reflection ◽  
Substrate Temperatures

AbstractThis paper presents and discusses the results of measuring IR reflection and ellipsometric parameters, optical microscopy and AFM the mixed phase of amorphous Si:Y films with microcrystalline inclusions. These films were obtained by electron-beam evaporation of siliconyttrium alloys with different Y concentration (5-30 %) at two substrate temperatures (370 and 620 °C).

scholarly journals Deposition of Al Thin Film on Steel Substrate: The Role of Thickness on Crystallization and Grain Growth

Metals ◽  
2018 ◽  
Vol 9 (1) ◽  
pp. 12 ◽  
Author(s):  
Hayk Khachatryan ◽  
Sung-Nam Lee ◽  
Kyoung-Bo Kim ◽  
Moojin Kim
Keyword(s):  
Thin Film ◽  
Optical Properties ◽  
Film Thickness ◽  
Grain Growth ◽  
Growth Process ◽  
Film Growth ◽  
Specular Reflection ◽  
Steel Substrate ◽  
Al Thin Film

In this study, we deposited aluminum (Al) films of different thicknesses on steel substrate and examined their phase, microstructure, and film growth process. We estimated that films of up to 30 nm thickness were mainly amorphous in nature. When the film thickness exceeded 30 nm, crystallization was observed. The further increase in film thickness triggered grain growth, and the formation of grains up to 40 nm occurred. In such cases, the Al film had a cross-grained structure with well-developed primary grains networks that were filled with small secondary grains. We demonstrated that the microstructure played a key role in optical properties. The films below 30 nm showed higher specular reflection, whereas thicker films showed higher diffuse reflections.

scholarly journals Low-temperature, high-speed reactive deposition of metal oxides for perovskite solar cells

2019 ◽  
Vol 7 (5) ◽  
pp. 2283-2290 ◽  
Author(s):  
Thomas J. Routledge ◽  
Michael Wong-Stringer ◽  
Onkar S. Game ◽  
Joel A. Smith ◽  
James E. Bishop ◽  
...  
Keyword(s):  
Electron Beam ◽  
Solar Cells ◽  
Low Temperature ◽  
Substrate Temperature ◽  
Metal Oxides ◽  
High Speed ◽  
Perovskite Solar Cells ◽  
Electron Beam Evaporation ◽  
Reactive Deposition ◽  
Charge Extraction

Perovskite solar cells utilising NiO and TiO2 charge-extraction layers, deposited via high-speed, low substrate-temperature reactive electron-beam evaporation, achieve 15.8% PCE.

Influence of a Capping Layer on the Mechanical Properties of Copper Films

1994 ◽  
Vol 356 ◽  
Author(s):  
R.-M. Keller ◽  
S. Bader ◽  
R. P. Vinci ◽  
E. Arzt
Keyword(s):  
Mechanical Properties ◽  
Film Thickness ◽  
Grain Growth ◽  
Low Temperatures ◽  
Bauschinger Effect ◽  
Diffusional Creep ◽  
Copper Films ◽  
Cu Films ◽  
Heating And Cooling ◽  
Cooling Stress

AbstractThe substrate curvature technique was employed to study the mechanical properties of 0.6 μm and 1.0 μm Cu films capped with a 50 nm thick Si3N4 layer and to compare them with the mechanical properties of uncapped Cu films. The microstructures of these films were also investigated. Grain growth, diffusional creep and dislocation processes are impeded by the cap layer. This is evident in the form of high stresses at high temperatures on heating and at low temperatures on cooling. At intermediate temperatures on heating and cooling, stress plateaus a relatively low stresses exist. This can be explained by the so-called Bauschinger effect. A film thickness dependence of the stresses in the film could not be observed for capped Cu films.

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