Piezoresistance and Quantum Confinement in Microcrystalline Silicon

1991 ◽  
Vol 256 ◽  
Author(s):  
J. S. Foresi ◽  
T. D. Moustakas
Keyword(s):  
Strain Gauge ◽  
Quantum Confinement ◽  
Reactive Sputtering ◽  
Sensitive Strain ◽  
Silicon Films ◽  
Microcrystalline Silicon ◽  
Two Phase ◽  
Silicon Target ◽  
Highly Sensitive ◽  
Amorphous Si

ABSTRACTWe report piezoresistance studies in microcrystalline silicon films produced by reactive sputtering from a silicon target in an atmosphere of hydrogen and argon. The microcrystalline silicon films are two phase materials consisting of 50-100Å diameter silicon crystallites embedded in an amorphous Si-Hx matrix. The conductivity of the films was found to decrease significantly when the films were put under compression. Conductivity decreases of up to 100% were observed; this large conductivity changes with strain indicate that microcrystalline silicon is ideally suited for highly sensitive strain gauge applications. The results can be qualitatively accounted for in a model which assumes quantum confinement of carriers in 50Å diameter silicon crystallites separated by tunnelable amorphous Si-Hx barriers.

scholarly journals GaAs-based resonant tunneling diode (RTD) epitaxy on Si for highly sensitive strain gauge applications

2013 ◽  
Vol 8 (1) ◽  
pp. 218 ◽  
Author(s):  
Jie Li ◽  
Hao Guo ◽  
Jun Liu ◽  
Jun Tang ◽  
Haiqiao Ni ◽  
...  
Keyword(s):  
Strain Gauge ◽  
Resonant Tunneling ◽  
Resonant Tunneling Diode ◽  
Sensitive Strain ◽  
Tunneling Diode ◽  
Highly Sensitive

A flexible and highly sensitive strain-gauge sensor using reversible interlocking of nanofibres

2012 ◽  
Vol 11 (9) ◽  
pp. 795-801 ◽  
Author(s):  
Changhyun Pang ◽  
Gil-Yong Lee ◽  
Tae-il Kim ◽  
Sang Moon Kim ◽  
Hong Nam Kim ◽  
...  
Keyword(s):  
Strain Gauge ◽  
Sensitive Strain ◽  
Highly Sensitive ◽  
Strain Gauge Sensor

scholarly journals Development of Highly Sensitive Strain Sensor Using Area-Arrayed Graphene Nanoribbons

Nanomaterials ◽  
2021 ◽  
Vol 11 (7) ◽  
pp. 1701
Author(s):  
Ken Suzuki ◽  
Ryohei Nakagawa ◽  
Qinqiang Zhang ◽  
Hideo Miura
Keyword(s):  
Graphene Nanoribbons ◽  
Strain Sensor ◽  
Strain Sensors ◽  
Sensitive Strain ◽  
Bending Test ◽  
Gauge Factor ◽  
Four Point Bending ◽  
Current Voltage ◽  
Highly Sensitive ◽  
Current Voltage Relationship

In this study, a basic design of area-arrayed graphene nanoribbon (GNR) strain sensors was proposed to realize the next generation of strain sensors. To fabricate the area-arrayed GNRs, a top-down approach was employed, in which GNRs were cut out from a large graphene sheet using an electron beam lithography technique. GNRs with widths of 400 nm, 300 nm, 200 nm, and 50 nm were fabricated, and their current-voltage characteristics were evaluated. The current values of GNRs with widths of 200 nm and above increased linearly with increasing applied voltage, indicating that these GNRs were metallic conductors and a good ohmic junction was formed between graphene and the electrode. There were two types of GNRs with a width of 50 nm, one with a linear current–voltage relationship and the other with a nonlinear one. We evaluated the strain sensitivity of the 50 nm GNR exhibiting metallic conduction by applying a four-point bending test, and found that the gauge factor of this GNR was about 50. Thus, GNRs with a width of about 50 nm can be used to realize a highly sensitive strain sensor.

Mechanism of highly sensitive strain response in antiferromagnetic chromium

2021 ◽  
Vol 129 (20) ◽  
pp. 203901
Author(s):  
Yohei Kota ◽  
Eiji Niwa ◽  
Masayuki Naoe
Keyword(s):  
Sensitive Strain ◽  
Strain Response ◽  
Highly Sensitive

Pulsed Laser Annealing of R.F.Sputtered Amorphous Si : H.Films, Doped with Arsenic

1981 ◽  
Vol 4 ◽  
Author(s):  
E. Fogarassy ◽  
R. Stuck ◽  
M. Toulemonde ◽  
P. Siffert ◽  
J.F. Morhange ◽  
...  
Keyword(s):  
Ruby Laser ◽  
Laser Annealing ◽  
Pulsed Laser ◽  
Amorphous Layer ◽  
High Concentration ◽  
Topographic Analysis ◽  
Pulsed Laser Annealing ◽  
Residual Hydrogen ◽  
Silicon Target ◽  
Amorphous Si

Arsenic doped amorphous silicon layers have been deposited on silicon single crystals by R.F.cathodic sputtering of a silicon target in a reactive argon-hydrogen mixture, and annealed with a Q-switched Ruby laser. Topographic analysis of the irradiated layers has shown the formation of a crater, due to an evaporation effect of material which could be related to the presence of a high concentration of Ar in the amorphous layer. RBS and Raman Spectroscopy showed that the remaining layer is not recrystallised probably due to inhibition by the residual hydrogen. However, it was found that arsenic diffuses into the monocrystalline substrate by laser induced diffusion of dopant from the surface solid source, leading to the formation of good quality P-N junctions.

Microcrystalline Silicon Films Deposited by Cathode‐Type RF Glow Discharge Technique

1995 ◽  
Vol 142 (5) ◽  
pp. 1663-1666 ◽  
Author(s):  
Ahalapitiya Hewage Jayatissa ◽  
Yoichiro Nakanishi ◽  
Yosinori Hatanaka
Keyword(s):  
Glow Discharge ◽  
Silicon Films ◽  
Microcrystalline Silicon ◽  
Rf Glow Discharge

Preparation and properties of microcrystalline silicon films using photochemical vapor deposition

1983 ◽  
Vol 59-60 ◽  
pp. 715-718 ◽  
Author(s):  
Tadashi Saitoh ◽  
Toshikazu Shimada ◽  
Masataka Migitaka ◽  
Yasuo Tarui
Keyword(s):  
Vapor Deposition ◽  
Silicon Films ◽  
Microcrystalline Silicon ◽  
Photochemical Vapor Deposition
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