Properties and photovoltaic applications of microcrystalline silicon films prepared by rf reactive sputtering

1985 ◽  
Vol 58 (2) ◽  
pp. 983-986 ◽  
Author(s):  
T. D. Moustakas ◽  
H. Paul Maruska ◽  
R. Friedman
Keyword(s):  
Reactive Sputtering ◽  
Silicon Films ◽  
Microcrystalline Silicon ◽  
Photovoltaic Applications

Piezoresistance and Quantum Confinement in Microcrystalline Silicon

1991 ◽  
Vol 256 ◽  
Author(s):  
J. S. Foresi ◽  
T. D. Moustakas
Keyword(s):  
Strain Gauge ◽  
Quantum Confinement ◽  
Reactive Sputtering ◽  
Sensitive Strain ◽  
Silicon Films ◽  
Microcrystalline Silicon ◽  
Two Phase ◽  
Silicon Target ◽  
Highly Sensitive ◽  
Amorphous Si

ABSTRACTWe report piezoresistance studies in microcrystalline silicon films produced by reactive sputtering from a silicon target in an atmosphere of hydrogen and argon. The microcrystalline silicon films are two phase materials consisting of 50-100Å diameter silicon crystallites embedded in an amorphous Si-Hx matrix. The conductivity of the films was found to decrease significantly when the films were put under compression. Conductivity decreases of up to 100% were observed; this large conductivity changes with strain indicate that microcrystalline silicon is ideally suited for highly sensitive strain gauge applications. The results can be qualitatively accounted for in a model which assumes quantum confinement of carriers in 50Å diameter silicon crystallites separated by tunnelable amorphous Si-Hx barriers.

Microcrystalline Silicon Films Deposited by Cathode‐Type RF Glow Discharge Technique

1995 ◽  
Vol 142 (5) ◽  
pp. 1663-1666 ◽  
Author(s):  
Ahalapitiya Hewage Jayatissa ◽  
Yoichiro Nakanishi ◽  
Yosinori Hatanaka
Keyword(s):  
Glow Discharge ◽  
Silicon Films ◽  
Microcrystalline Silicon ◽  
Rf Glow Discharge

Preparation and properties of microcrystalline silicon films using photochemical vapor deposition

1983 ◽  
Vol 59-60 ◽  
pp. 715-718 ◽  
Author(s):  
Tadashi Saitoh ◽  
Toshikazu Shimada ◽  
Masataka Migitaka ◽  
Yasuo Tarui
Keyword(s):  
Vapor Deposition ◽  
Silicon Films ◽  
Microcrystalline Silicon ◽  
Photochemical Vapor Deposition

STM on doped and undoped hydrogenated amorphous and microcrystalline silicon films

1992 ◽  
Vol 42-44 ◽  
pp. 1398-1402 ◽  
Author(s):  
W. Zimmermann-Edling ◽  
R. Wiesendanger ◽  
F. Finger ◽  
K. Prasad ◽  
A. Shah
Keyword(s):  
Silicon Films ◽  
Microcrystalline Silicon ◽  
Hydrogenated Amorphous

Study of metastabilities in microcrystalline silicon films by photoconductivity techniques

2006 ◽  
Vol 501 (1-2) ◽  
pp. 129-132 ◽  
Author(s):  
N. Souffi ◽  
G.H. Bauer ◽  
R. Brüggemann
Keyword(s):  
Silicon Films ◽  
Microcrystalline Silicon

scholarly journals Reactive Sputtering of Magnesium Hydride Thin Films for Photovoltaic Applications

2009 ◽  
Vol 1210 ◽  
Author(s):  
Charlotte Platzer-Björkman ◽  
Trygve Mongstad ◽  
Smagul Zh. Karazhanov ◽  
Jan-Petter Maehlen ◽  
Erik Stensrud Marstein ◽  
...  
Keyword(s):  
Thin Films ◽  
Surface Passivation ◽  
Hydrogen Plasma ◽  
Reactive Sputtering ◽  
X Ray Diffraction ◽  
High Hydrogen ◽  
Hydrogen Flow ◽  
Resistivity Measurements ◽  
Photovoltaic Applications ◽  
Silicon Surface Passivation

AbstractDeposition of MgHx (MgH2 + Mg) thin films is performed using RF reactive sputtering in argon-hydrogen plasma. Films are characterized using x-ray diffraction (XRD), scanning electron microscopy, optical and resistivity measurements. Formation of crystalline MgH2 is confirmed by XRD, but the formation of some metallic Mg in the films could not be avoided. Increased H/Mg ratio by deposition at high hydrogen flow or high total pressure gives films that oxidize within days or weeks. Deposition at elevated substrate temperature results in improved crystallinity and stability. Initial studies of MgHx for silicon surface passivation are presented.

Sign in / Sign up

Export Citation Format

Share Document