Optical Characterization of the Visible Photoluminescence from Porous Silicon

1991 ◽  
Vol 256 ◽  
Author(s):  
H. D. Fuchs ◽  
M. S. Brandt ◽  
M. Stutzmann ◽  
J. Weber
Keyword(s):  
Porous Silicon ◽  
Room Temperature ◽  
Laser Excitation ◽  
Pulsed Laser ◽  
Infrared Transmission ◽  
Visible Photoluminescence ◽  
Etched Silicon ◽  
Transmission Measurements ◽  
Room Temperature Luminescence

ABSTRACTThe visible photoluminescence of electrochemically etched silicon wafers is studied by cw- and pulsed-laser excitation. Raman data and infrared transmission measurements on the same samples prove the presence of oxygen and hydrogen in different bonding configurations in the luminescent layers. Identical optical properties are found for chemically synthesized siloxene (Si6O3H6) and its derivates. We present evidence that the origin of the strong room temperature luminescence in “porous” silicon can be traced to siloxene derivates present in the samples.

Processing by Pulsed Laser Deposition and Structural, Morphological and Chemical Characterization of Bi-Pb-Sr-Ca-Cu-O and Bi-Pb-Sb-Sr-Ca-Cu-O Thin Films

2010 ◽  
Vol 75 ◽  
pp. 202-207
Author(s):  
Victor Ríos ◽  
Elvia Díaz-Valdés ◽  
Jorge Ricardo Aguilar ◽  
T.G. Kryshtab ◽  
Ciro Falcony
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Room Temperature ◽  
Pulsed Laser ◽  
Chemical Characterization ◽  
Laser Deposition ◽  
Nominal Composition ◽  
Deposition Parameters ◽  
The Relationship

Bi-Pb-Sr-Ca-Cu-O (BPSCCO) and Bi-Pb-Sb-Sr-Ca-Cu-O (BPSSCCO) thin films were grown on MgO single crystal substrates by pulsed laser deposition. The deposition was carried out at room temperature during 90 minutes. A Nd:YAG excimer laser ( = 355 nm) with a 2 J/pulse energy density operated at 30 Hz was used. The distance between the target and substrate was kept constant at 4,5 cm. Nominal composition of the targets was Bi1,6Pb0,4Sr2Ca2Cu3O and Bi1,6Pb0,4Sb0,1Sr2Ca2Cu3OSuperconducting targets were prepared following a state solid reaction. As-grown films were annealed at different conditions. As-grown and annealed films were characterized by XRD, FTIR, and SEM. The films were prepared applying an experimental design. The relationship among deposition parameters and their effect on the formation of superconducting Bi-system crystalline phases was studied.

Characterization of zinc oxide thin films prepared by pulsed laser deposition at room temperature

2008 ◽  
Vol 202 (22-23) ◽  
pp. 5467-5470 ◽  
Author(s):  
Norihiro Sakai ◽  
Yoshihiro Umeda ◽  
Fumiaki Mitsugi ◽  
Tomoaki Ikegami
Keyword(s):  
Thin Films ◽  
Zinc Oxide ◽  
Pulsed Laser Deposition ◽  
Room Temperature ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Oxide Thin Films

Growth of BN Thin Films by Pulsed Laser Deposition

1991 ◽  
Vol 235 ◽  
Author(s):  
J. A. Knapp
Keyword(s):  
Pulsed Laser Deposition ◽  
Room Temperature ◽  
Pulsed Laser ◽  
Laser Wavelength ◽  
Laser Deposition ◽  
Strong Function ◽  
Ablation Plasma ◽  
Clean Sample

ABSTRACTA new UHV system for pulsed laser deposition of materials is described, together with results from preliminary experiments for depositions of BN on Si. The system is designed to allow for in-situ diagnostics of the ablation plasma, as well as UHV preparation and characterization of clean sample substrates. The room temperature depositions of BN result in amorphous, B-rich films, whose particle content is a strong function of laser wavelength.

Fabrication and characterization of magnetic porous silicon with curie temperature above room temperature

2017 ◽  
Vol 24 (5) ◽  
pp. 1139-1144 ◽  
Author(s):  
Mansour Aouassa ◽  
Imen Jadli ◽  
Mohammad Ali Zrir ◽  
Hassen Maaref ◽  
Ridha Mghaieth ◽  
...  
Keyword(s):  
Porous Silicon ◽  
Curie Temperature ◽  
Room Temperature ◽  
Fabrication And Characterization

Preparation and Characterization of ZnS/ZnO Compound Grown on Porous Silicon Substrate Using CVD Method

2010 ◽  
Vol 663-665 ◽  
pp. 393-396
Author(s):  
Fu Ru Zhong ◽  
Xiao Yi Lv ◽  
Zhen Hong Jia
Keyword(s):  
Electron Microscopy ◽  
Porous Silicon ◽  
Room Temperature ◽  
Zinc Sulphide ◽  
Cvd Method ◽  
Peak Energy ◽  
Porous Silicon Substrate ◽  
Photoluminescence Peak ◽  
Scanning Electron

We have investigated the morphology and photoluminescence (PL) of Zinc Oxide (ZnO) and Zinc sulphide (ZnS) compound grown on porous silicon at room temperature. Under different excitation wavelengths (320 nm, 340nm, 370 nm), the photoluminescence (PL) spectra of PS-ZnS-ZnO composites were different, and at 550nm there is a strong photoluminescence peak. Energy dispersive spectroscopy (EDS) has been carried out to evaluate the existing of ZnO/ZnS compound. In addition, the scanning electron microscopy (SEM) observation shows that the morphology of the PS-ZnS-ZnO composites was well grown on porous silicon.

Growth of Bn Thin Films by Pulsed Laser Deposition

1991 ◽  
Vol 236 ◽  
Author(s):  
J. A. Knapp
Keyword(s):  
Pulsed Laser Deposition ◽  
Room Temperature ◽  
Pulsed Laser ◽  
Laser Wavelength ◽  
Laser Deposition ◽  
Strong Function ◽  
Ablation Plasma ◽  
Clean Sample

AbstractA new UHV system for pulsed laser deposition of materials is described, together with results from preliminary experiments for depositions of BN on Si. The system is designed to allow for in-situ diagnostics of the ablation plasma, as well as UHV preparation and characterization of clean sample substrates. The room temperature depositions of BN result in amorphous, B-rich films, whose particle content is a strong function of laser wavelength.

Optical Characterization of Transmitted Visible Photoluminescence of Bragg-resonanced Porous Silicon

2018 ◽  
Vol 39 (2) ◽  
pp. 161-166
Author(s):  
Mi-Ae Park ◽  
Jin Soo Kim ◽  
Soo Gyeong Cho ◽  
Honglae Sohn
Keyword(s):  
Porous Silicon ◽  
Optical Characterization ◽  
Visible Photoluminescence

Preparation and characterization of La1.8Sr0.2CuO4/La1.9Sr0.1CuO4 superconducting bilayers

2013 ◽  
Vol 28 (S1) ◽  
pp. S7-S11
Author(s):  
Y. Zhang ◽  
Y.H. An ◽  
Y. Xing ◽  
D.Y. Dong ◽  
S.L. Wang ◽  
...  
Keyword(s):  
Electrical Transport ◽  
Room Temperature ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Electrical Transport Properties ◽  
Bilayer Films ◽  
Deposition Parameters ◽  
Surface Morphologies

The c-oriented La1.8Sr0.2CuO4 and La1.9Sr0.1CuO4 bilayer films were deposited on (001) SrTiO3 single-crystal substrates by using the pulsed laser deposition technique. The effects of deposition parameters on the quality of thin films were investigated. The crystal structures and surface morphologies were characterized by means of XRD and SEM, and the results showed that an as-prepared film deposited with the optimized parameters has high quality. Then La1.8Sr0.2CuO4/La1.9Sr0.1CuO4 bilayers structure was prepared using the optimized parameters for each corresponding layer, and the electrical transport properties were measured. Interesting rectifying properties were observed at both room and low temperatures, and the rectifying ratio at low temperature was found to be much higher than that at room temperature.

scholarly journals Structural characterization of two solvates of a luminescent copper(II) bis(pyridine)-substituted benzimidazole complex

2017 ◽  
Vol 73 (11) ◽  
pp. 1616-1621 ◽  
Author(s):  
David K. Geiger ◽  
Matthew R. DeStefano ◽  
Robert A. Lewis
Keyword(s):  
Absorption Spectrum ◽  
Biological Activity ◽  
Room Temperature ◽  
Bond Distance ◽  
Ligand Field ◽  
Asymmetric Unit ◽  
Square Planar ◽  
Pharmaceutical Uses ◽  
Room Temperature Luminescence

Copper(II) complexes of benzimidazole are known to exhibit biological activity that makes them of interest for chemotherapeutic and other pharmaceutical uses. The complex bis(acetato-κO){5,6-dimethyl-2-(pyridin-2-yl)-1-[(pyridin-2-yl)methyl]-1H-benzimidazole-κ2N2,N3}copper(II), has been prepared. The absorption spectrum has features attributed to intraligand and ligand-field transitions and the complex exhibits ligand-centered room-temperature luminescence in solution. The acetonitrile monosolvate, [Cu(C2H3O2)2(C20H18N4)]·C2H3N (1), and the ethanol hemisolvate, [Cu(C2H3O2)2(C20H18N4)]·0.5C2H6O (2), have been structurally characterized. Compound2has two copper(II) complexes in the asymmetric unit. In both1and2, distorted square-planar N2O2coordination geometries are observed and the Cu—N(Im) bond distance is slightly shorter than the Cu—N(py) bond distance. Intermolecular π–π interactions are found in1and2. A weak C—H...π interaction is observed in1.

Defect-based model for room-temperature visible photoluminescence in porous silicon

1994 ◽  
Vol 50 (23) ◽  
pp. 17093-17096 ◽  
Author(s):  
S. M. Prokes ◽  
W. E. Carlos ◽  
O. J. Glembocki
Keyword(s):  
Porous Silicon ◽  
Room Temperature ◽  
Visible Photoluminescence
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