Defect-based model for room-temperature visible photoluminescence in porous silicon

1994 ◽  
Vol 50 (23) ◽  
pp. 17093-17096 ◽  
Author(s):  
S. M. Prokes ◽  
W. E. Carlos ◽  
O. J. Glembocki
Keyword(s):  
Porous Silicon ◽  
Room Temperature ◽  
Visible Photoluminescence

Optical Characterization of the Visible Photoluminescence from Porous Silicon

1991 ◽  
Vol 256 ◽  
Author(s):  
H. D. Fuchs ◽  
M. S. Brandt ◽  
M. Stutzmann ◽  
J. Weber
Keyword(s):  
Porous Silicon ◽  
Room Temperature ◽  
Laser Excitation ◽  
Pulsed Laser ◽  
Infrared Transmission ◽  
Visible Photoluminescence ◽  
Etched Silicon ◽  
Transmission Measurements ◽  
Room Temperature Luminescence

ABSTRACTThe visible photoluminescence of electrochemically etched silicon wafers is studied by cw- and pulsed-laser excitation. Raman data and infrared transmission measurements on the same samples prove the presence of oxygen and hydrogen in different bonding configurations in the luminescent layers. Identical optical properties are found for chemically synthesized siloxene (Si6O3H6) and its derivates. We present evidence that the origin of the strong room temperature luminescence in “porous” silicon can be traced to siloxene derivates present in the samples.

Excitation Spectra of the Visible Photoluminescence of Anodized Porous Silicon

1992 ◽  
Vol 31 (Part 2, No. 3A) ◽  
pp. L207-L209 ◽  
Author(s):  
Tomoyoshi Motohiro ◽  
Tetsu Kachi ◽  
Fusayoshi Miura ◽  
Yasuhiko Takeda ◽  
Shi-aki Hyodo ◽  
...  
Keyword(s):  
Porous Silicon ◽  
Excitation Spectra ◽  
Visible Photoluminescence

Room-temperature electroluminescence from erbium-doped porous silicon

1999 ◽  
Vol 75 (25) ◽  
pp. 3989-3991 ◽  
Author(s):  
Herman A. Lopez ◽  
Philippe M. Fauchet
Keyword(s):  
Porous Silicon ◽  
Room Temperature ◽  
Erbium Doped

Visible Photoluminescence from Anodically Oxidized Porous Silicon

1994 ◽  
Vol 33 (Part 2, No. 7A) ◽  
pp. L941-L944 ◽  
Author(s):  
Toshimichi Ito ◽  
Kenji Motoi ◽  
Osamu Arakaki ◽  
Akimitsu Hatta ◽  
Akio Hiraki
Keyword(s):  
Porous Silicon ◽  
Visible Photoluminescence ◽  
Oxidized Porous Silicon

Light-Induced Degradation and Recovery of Visible Photoluminescence in Porous Silicon

1992 ◽  
Vol 31 (Part 2, No. 11B) ◽  
pp. L1577-L1579 ◽  
Author(s):  
Hikaru Nishitani ◽  
Hiroyasu Nakata ◽  
Yasufumi Fujiwara ◽  
Tyuzi Ohyama
Keyword(s):  
Porous Silicon ◽  
Visible Photoluminescence

Room‐temperature backbond oxidation of the porous silicon surface by oxygen radical irradiation

1995 ◽  
Vol 66 (7) ◽  
pp. 836-838 ◽  
Author(s):  
Patrick O’Keeffe ◽  
Yoshinobu Aoyagi ◽  
Shuji Komuro ◽  
Takashi Kato ◽  
Takitaro Morikawa
Keyword(s):  
Porous Silicon ◽  
Silicon Surface ◽  
Room Temperature ◽  
Oxygen Radical ◽  
Porous Silicon Surface

Effect of current density on the porous silicon preparation as gas sensors**

2021 ◽  
Vol 30 (1) ◽  
pp. 257-264
Author(s):  
Muna H. Kareem ◽  
Adi M. Abdul Hussein ◽  
Haitham Talib Hussein
Keyword(s):  
Porous Silicon ◽  
Gas Sensors ◽  
Current Density ◽  
Room Temperature ◽  
Low Cost ◽  
High Surface ◽  
Volume Ratio ◽  
Etching Time ◽  
Force Microscopy ◽  
Materials Used

Abstract In this study, porous silicon (PSi) was used to manufacture gas sensors for acetone and ethanol. Samples of PSi were successfully prepared by photoelectrochemical etching and applied as an acetone and ethanol gas sensor at room temperature at various current densities J= 12, 24 and 30 mA/cm2 with an etching time of 10 min and hydrofluoric acid concentration of 40%. Well-ordered n-type PSi (100) was carefully studied for its chemical composition, surface structure and bond configuration of the surface via X-ray diffraction, atomic force microscopy, Fourier transform infrared spectroscopy and photoluminescence tests. Results showed that the best sensitivity of PSi was to acetone gas than to ethanol under the same conditions at an etching current density of 30 mA/cm2, reaching about 2.413 at a concentration of 500 parts per million. The PSi layers served as low-cost and high-quality acetone gas sensors. Thus, PSi can be used to replace expensive materials used in gas sensors that function at low temperatures, including room temperature. The material has an exceptionally high surface-to-volume ratio (increasing surface area) and demonstrates ease of fabrication and compatibility with manufacturing processes of silicon microelectronics.

scholarly journals A novel and facile synthesis of visible photoluminescence Si nanocrystals by room temperature mechanochemical disproportionation of SiO

RSC Advances ◽  
2019 ◽  
Vol 9 (15) ◽  
pp. 8310-8314
Author(s):  
Yunzi Xin ◽  
Yuping Xu ◽  
Jeongbin Lee ◽  
Takashi Shirai
Keyword(s):  
Room Temperature ◽  
Facile Synthesis ◽  
Visible Photoluminescence ◽  
Si Nanocrystals

Visible photoluminescence Si nanocrystals (Si NCs) are synthesized via a novel and facile room temperature mechanochemical disproportionation of SiO.

Humidity driven molecular switch based on photoluminescent DyIIICoIII single-molecule magnets

2019 ◽  
Vol 7 (14) ◽  
pp. 4164-4172 ◽  
Author(s):  
Szymon Chorazy ◽  
Jakub J. Zakrzewski ◽  
Mateusz Reczyński ◽  
Koji Nakabayashi ◽  
Shin-ichi Ohkoshi ◽  
...  
Keyword(s):  
Single Molecule ◽  
Magnetic Relaxation ◽  
Room Temperature ◽  
Functional Materials ◽  
Molecular Switch ◽  
Dehydration Process ◽  
Single Molecule Magnets ◽  
Visible Photoluminescence ◽  
Slow Magnetic Relaxation

Functional materials incorporating cyanido-bridged DyIIICoIII molecules combine visible photoluminescence and slow magnetic relaxation, both switchable by the level of humidity within the reversible room temperature dehydration process.

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