Growth of BN Thin Films by Pulsed Laser Deposition

1991 ◽  
Vol 235 ◽  
Author(s):  
J. A. Knapp
Keyword(s):  
Pulsed Laser Deposition ◽  
Room Temperature ◽  
Pulsed Laser ◽  
Laser Wavelength ◽  
Laser Deposition ◽  
Strong Function ◽  
Ablation Plasma ◽  
Clean Sample

ABSTRACTA new UHV system for pulsed laser deposition of materials is described, together with results from preliminary experiments for depositions of BN on Si. The system is designed to allow for in-situ diagnostics of the ablation plasma, as well as UHV preparation and characterization of clean sample substrates. The room temperature depositions of BN result in amorphous, B-rich films, whose particle content is a strong function of laser wavelength.

Growth of Bn Thin Films by Pulsed Laser Deposition

1991 ◽  
Vol 236 ◽  
Author(s):  
J. A. Knapp
Keyword(s):  
Pulsed Laser Deposition ◽  
Room Temperature ◽  
Pulsed Laser ◽  
Laser Wavelength ◽  
Laser Deposition ◽  
Strong Function ◽  
Ablation Plasma ◽  
Clean Sample

AbstractA new UHV system for pulsed laser deposition of materials is described, together with results from preliminary experiments for depositions of BN on Si. The system is designed to allow for in-situ diagnostics of the ablation plasma, as well as UHV preparation and characterization of clean sample substrates. The room temperature depositions of BN result in amorphous, B-rich films, whose particle content is a strong function of laser wavelength.

Processing by Pulsed Laser Deposition and Structural, Morphological and Chemical Characterization of Bi-Pb-Sr-Ca-Cu-O and Bi-Pb-Sb-Sr-Ca-Cu-O Thin Films

2010 ◽  
Vol 75 ◽  
pp. 202-207
Author(s):  
Victor Ríos ◽  
Elvia Díaz-Valdés ◽  
Jorge Ricardo Aguilar ◽  
T.G. Kryshtab ◽  
Ciro Falcony
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Room Temperature ◽  
Pulsed Laser ◽  
Chemical Characterization ◽  
Laser Deposition ◽  
Nominal Composition ◽  
Deposition Parameters ◽  
The Relationship

Bi-Pb-Sr-Ca-Cu-O (BPSCCO) and Bi-Pb-Sb-Sr-Ca-Cu-O (BPSSCCO) thin films were grown on MgO single crystal substrates by pulsed laser deposition. The deposition was carried out at room temperature during 90 minutes. A Nd:YAG excimer laser ( = 355 nm) with a 2 J/pulse energy density operated at 30 Hz was used. The distance between the target and substrate was kept constant at 4,5 cm. Nominal composition of the targets was Bi1,6Pb0,4Sr2Ca2Cu3O and Bi1,6Pb0,4Sb0,1Sr2Ca2Cu3OSuperconducting targets were prepared following a state solid reaction. As-grown films were annealed at different conditions. As-grown and annealed films were characterized by XRD, FTIR, and SEM. The films were prepared applying an experimental design. The relationship among deposition parameters and their effect on the formation of superconducting Bi-system crystalline phases was studied.

Characterization of zinc oxide thin films prepared by pulsed laser deposition at room temperature

2008 ◽  
Vol 202 (22-23) ◽  
pp. 5467-5470 ◽  
Author(s):  
Norihiro Sakai ◽  
Yoshihiro Umeda ◽  
Fumiaki Mitsugi ◽  
Tomoaki Ikegami
Keyword(s):  
Thin Films ◽  
Zinc Oxide ◽  
Pulsed Laser Deposition ◽  
Room Temperature ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Oxide Thin Films

Structure and Morphology of Thin Films Deposited by Pulsed Laser Deposition Technique

2012 ◽  
Vol 186 ◽  
pp. 160-163
Author(s):  
Agnieszka Radziszewska
Keyword(s):  
Thin Films ◽  
Chemical Composition ◽  
Pulsed Laser Deposition ◽  
Multilayer Structure ◽  
Room Temperature ◽  
Pulsed Laser ◽  
Nanocrystalline Structure ◽  
Laser Wavelength ◽  
Laser Deposition ◽  
Structure And Morphology

The paper presented the structure (TEM), morphology and chemical composition (EDS) of the -Al-Mg thin films and Al-Mg-Ni multilayer obtained by pulsed laser deposition (PLD). This films were deposited using Nd:YAG laser. The different process parameters were applied. The Al-Mg film was obtained by application of the laser wavelength (=355 nm) and substrate temperature (Ts) 200 oC. Whereas the Al-Mg-Ni multilayer was produced at lower laser wavelength (=266 nm) and at room temperature of the substrate. For preparation of both films the same laser fluence (q=4.7 J/cm2) was used. The Al-Mg possessed nanocrystalline structure with the areas where only columnar Al crystals occurred. EDS of this thin film exhibited that in the nanocrystalline areas the chemical composition corresponded to the target content of Al and Mg. While Al-Mg-Ni multilayer composed of six layers. In this case Al-Mg layers were thinner then Ni layers. In the multilayer structure the fcc Al0.65Mg0.35 and fcc Ni phases was revealed.

PREPARATION AND CHARACTERIZATION OF LaFeO3 THIN FILMS ON (100) SrTiO3 SUBSTRATES BY PULSED LASER DEPOSITION

2011 ◽  
Vol 01 (03) ◽  
pp. 363-367 ◽  
Author(s):  
HONG LIU ◽  
JIANGUO ZHU ◽  
DINGQUAN XIAO
Keyword(s):  
Pulsed Laser Deposition ◽  
Quantum Interference ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
X Ray Diffraction ◽  
Force Microscopy ◽  
Atomic Force ◽  
Transmission Electron

A single-crystalline, crack-free, epitaxial (100)c LaFeO3 films were in situ grown by pulsed laser deposition on (100) SrTiO3 substrates. X-ray diffraction, atomic force microscopy and transmission electron microscopy reveal that the LaFeO3 films have high crystalline quality, a very smooth surface, and an atomically sharp LaFeO3/SrTiO3 interface. The magnetic properties of the LaFeO3 films were obtained by a superconducting quantum interference device magnetometry. The saturated magnetization and coercive field of LaFeO3 films are 14 emu/cm3 and 600 Oe, respectively.

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