Sub-Boundary Formation and Suppression in Silicon films Recrystallized by Scanned Zone Melting

1983 ◽  
Vol 25 ◽  
Author(s):  
Loren Pfeiffer ◽  
J. M. Gibson ◽  
T. Kovacs
Keyword(s):  
Grain Boundaries ◽  
Zone Melting ◽  
Silicon Films ◽  
Boundary Formation ◽  
Buried Oxide ◽  
Si Films

ABSTRACTWe observe that the formation of low angle grain boundaries (sub-boundaries) depends strongly on the thickness of the recrystallized Si film. The average lateral spacing between adjacent sub-boundaries increases from 40 μm for 4000Å films to 500 μm for unseeded Si films 30 μm thick. For seeded 30 μm Si films on 1.6 mm by 1.6 mm buried oxide islands, areas exceeding 1.0 mm by 1.0 mm have been recrystallized which are free of all sub-boundaries, but which contain dislocations in other configurations.

Crystalline Films on Amorphous Substrates by Zone Melting and Surface-Energy-Driven Grain Growth in Conjunction with Patferning

1985 ◽  
Vol 53 ◽  
Author(s):  
Henry I. Smith ◽  
M. W. Geis ◽  
C. V. Thompson ◽  
C. K. Chen
Keyword(s):  
Low Temperature ◽  
Surface Energy ◽  
Grain Boundaries ◽  
Grain Growth ◽  
High Temperatures ◽  
Zone Melting ◽  
Si Substrates ◽  
Crystalline Films ◽  
Amorphous Substrates ◽  
Si Films

ABSTRACTTwo approaches to preparing oriented crystalline films on amorphous substrates are reviewed briefly: zone-melting recrystallization (ZMR) and surface-energy-driven grain growth (SEDGG). In both approaches patterning can be employed either to establish orientation or to control the location of defects. ZMR has been highly successful for the growth of Si films on oxidized Si substrates, but its applicability is limited by the high temperatures required. SEDGG has been investigated as a potentially universal, low temperature approach. It has been demonstrated in Si, Ge, and Au. Surface gratings favor the growth of grains with a specific in-plane orientation. In order for SEDGG to be of broad practical value, the mobility of semiconductor grain boundaries must be increased substantially. Mobility enhancement has been achieved via doping and ion bombardment.

Elimination of Subboundaries from Zone-Melting-Recrystallized Silicon-On-Insulator Films

1985 ◽  
Vol 53 ◽  
Author(s):  
M. W. Geis ◽  
C. K. Chen ◽  
Henry I. Smith ◽  
P. M. Nitishin ◽  
B-Y. Tsaur ◽  
...  
Keyword(s):  
Grain Boundaries ◽  
Thermal Gradient ◽  
Zone Melting ◽  
Silicon On Insulator ◽  
Crystalline Defects ◽  
Si Films

ABSTRACTSince the introduction of zone-melting recrystallization (ZMR)for silicon-on-insulator (SOI) films, subboundaries (low-angle grain boundaries) have been the major crystalline defects in recrystallized films. By using an improved ZMR procedure, subboundaries have been eliminated over large areas. The improvements include the use of 1-µm-thick polycrystalline-Si films deposited on 2-µm-thick thermal SiO2 film (instead of 0.5-µm-thick Si and SiO2 films), a new encapsulation technique, and improved control of the thermal gradient during ZMR. Recrystallized SOI films without subboundaries contain isolated dislocations with densities <2 × 106 cm−2.

Nanocrystalline silicon ( nc-Si ) from single ion beam sputtering

2003 ◽  
Vol 762 ◽  
Author(s):  
Z.B. Zhou ◽  
G.M. Hadi ◽  
R.Q. Cui ◽  
Z.M. Ding ◽  
G. Li
Keyword(s):  
Solar Cell ◽  
Ion Beam ◽  
Nanocrystalline Silicon ◽  
Silicon Films ◽  
Chamber Pressure ◽  
Ion Beam Sputtering ◽  
High Hydrogen ◽  
Beam Sputtering ◽  
Si Films ◽  
Nanocrystalline Silicon Films

AbstractBased on a small set of selected publications on the using of nanocrystalline silicon films (nc-Si) for solar cell from 1997 to 2001, this paper reviews the application of nc-Si films as intrinsic layers in p-i-n solar cells. The new structure of nc-Si films deposited at high chamber pressure and high hydrogen dilution have characters of nanocrystalline grains with dimension about several tens of nanometer embedded in matrix of amorphous tissue and a high volume fraction of crystallinity (60~80%). The new nc-Si material have optical gap of 1.89 eV. The efficiency of this single junction solar cell reaches 8.7%. This nc-Si layer can be used not only as an intrinsic layer and as a p-type layer. Also nanocrystalline layer may be used as a seed layer for the growth of polycrystalline Si films at a low temperature.We used single ion beam sputtering methods to synthesize nanocrystalline silicon films successfully. The films were characterized with the technique of X-ray diffraction, Atomic Force Micrographs. We found that the films had a character of nc-amorphous double phase structure. Conductivity test at different temperatures presented the transportation of electrons dominated by different mechanism within different temperature ranges. Photoconductivity gains of the material were obtained in our recent investigation.

Fabrication of Crystalline Silicon Films for Solar Cells by a New Method of Gas-Flow Zone Melting Crystallization.

2003 ◽  
Vol 29 (2) ◽  
pp. 242-247
Author(s):  
Shuhei Yokoyama ◽  
Manabu Ihara ◽  
Hiroaki Hashizume ◽  
Hiroshi Komiyama ◽  
Chiaki Yokoyama
Keyword(s):  
Solar Cells ◽  
Gas Flow ◽  
Crystalline Silicon ◽  
Zone Melting ◽  
Silicon Films ◽  
New Method ◽  
Flow Zone

Electrical Characteristics and Device Applications of Zone-Melting-Recrystallized Si Films on SiO2

1982 ◽  
Vol 13 ◽  
Author(s):  
B-Y. Tsaur ◽  
John C. C. Fan ◽  
M. W. Geis ◽  
R. L. Chapman ◽  
S. R. J. Brueck ◽  
...  
Keyword(s):  
Three Dimensional ◽  
Zone Melting ◽  
Dimensional Structure ◽  
Electrical Characteristics ◽  
Mos Capacitors ◽  
Test Circuit ◽  
Speed Performance ◽  
Thin Film Resistors ◽  
High Yields ◽  
Si Films

ABSTRACTDevice-quality Si films have been prepared by using graphite strip heaters for zone melting poly-Si films deposited on SiO2-coated substrates. The electrical characteristics of these films have been studied by the fabrication and evaluation of thin-film resistors, Mosfets and MOS capacitors. High yields of functional transistor arrays and ring oscillators with promising speed performance have been obtained for CMOS test circuit chips fabricated in recrystallized Si films on 2-inch-diameter Si wafers. Dualgate Mosfets with a three-dimensional structure have been fabricated by using the zone-melting recrystallization technique.

scholarly journals ITO/SiO2/ITO Structure on a Sapphire Substrate Using the Oxidation of Ultra-Thin Si Films as an Insulating Layer for One-Glass-Solution Capacitive Touch-Screen Panels

Coatings ◽  
2020 ◽  
Vol 10 (2) ◽  
pp. 134 ◽  
Author(s):  
Shin Yong Joo ◽  
Chadrasekhar Loka ◽  
Young Woong Jo ◽  
Maddipatla Reddyprakash ◽  
Sung Whan Moon ◽  
...  
Keyword(s):  
Low Temperature ◽  
Sapphire Substrate ◽  
Indium Tin Oxide ◽  
Photoelectron Spectroscopy ◽  
Touch Screen ◽  
Sio2 Film ◽  
Silicon Films ◽  
Low Temperature Oxidation ◽  
Temperature Oxidation ◽  
Si Films

The SiO2 generated by low-temperature oxidation of ultra-thin metallic silicon (thickness = 50 nm) film was evaluated for implementation in one-glass-solution capacitive touch-screen panels (OGS-TSPs) on sapphire-based substrates. Our results show that the silicon films oxidized at 823 K exhibited the highest visible transmittance about 91% at 550 nm, compared to ~72% transmittance of the as-deposited silicon films which were deposited at room temperature. Additionally, the annealed films exhibited a more uniform, dense, and smooth surface microstructure than that of the as-deposited Si films. X-ray photoelectron spectroscopy (XPS) results revealed that the low-temperature oxidation of Si films at 823 K yielded SiO2. Furthermore, when the insulating SiO2 film obtained by low-temperature oxidation was sandwiched between two indium tin oxide (ITO) layers (ITO/SiO2/ITO) on a sapphire substrate, the SiO2 film resulted in the dielectric strength of approximately 3 MV/cm. In addition, the highest optical transmittance obtained by the ITO/SiO2/ITO films is about 88.3%. The change in capacitance of the ITO/SiO2/ITO structure was approximately 3.2 pF, which indicates the possibility of implementation in capacitive touch-screen panel devices.

Arc lamp zone melting and recrystallization of Si films on oxidized silicon substrates

1982 ◽  
Vol 41 (9) ◽  
pp. 824-826 ◽  
Author(s):  
T. J. Stultz ◽  
J. F. Gibbons
Keyword(s):  
Zone Melting ◽  
Silicon Substrates ◽  
Si Films
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