Initial Stages of Growth of ZnSe on Si

1992 ◽  
Vol 242 ◽  
Author(s):  
R. D. Bringans ◽  
D. K. Biegelsen ◽  
L.-E. Swartz ◽  
F. A. Ponce ◽  
J. C. Tramontana
Keyword(s):  
Zinc Selenide ◽  
Room Temperature ◽  
Molecular Beam ◽  
Solid Phase ◽  
Solid Phase Epitaxy ◽  
Compound Formation ◽  
Stages Of Growth ◽  
Gaas Films ◽  
Temperature Deposition ◽  
Growth Methods

ABSTRACTZinc selenide films have been grown heteroepitaxially on Si(100) substrates by molecular beam epitaxy. The initial stages of growth are dominated by the reaction of Se and Si atoms to form the compound SiSe2- The compound formation disrupts epitaxy, and several growth methods which avoid this are described and compared. We find that room temperature deposition plus solid phase epitaxy does not lead to significant SiSex formation and yields uniformly thick films which are misoriented with respect to the substrate and contain large regions of twinned ZnSe. The use of an As monolayer on the Si surface before the start of ZnSe growth allows good ZnSe epitaxy without any Si-Se reaction or any misorientation. ZnSe films have also been used as interlayers for GaAs growth on Si. This has allowed us to obtain uniform GaAs films at thicknesses which typically manifest a coalesced island morphology for GaAs grown directly on Si.

Interface Formation and the Heteroepitaxy of ZnSe on Si.

1990 ◽  
Vol 198 ◽  
Author(s):  
R. D. Bringans ◽  
D. K. Biegelsen ◽  
F. A. Ponce ◽  
L.-E. Swartz ◽  
J. C. Tramontana
Keyword(s):  
Zinc Selenide ◽  
Room Temperature ◽  
Molecular Beam ◽  
Solid Phase ◽  
Bulk Material ◽  
Znse Crystal ◽  
Si Substrate ◽  
Transmission Electron ◽  
Temperature Deposition ◽  
Substrate Temperatures

ABSTRACTZinc selenide films have been grown heteroepitaxially on Si(100) substrates by molecular beam epitaxy. The growth has been carried out for raised substrate temperatures and also at room temperature followed by solid-phase epitaxial (SPE) regrowth. The ZnSe films have been characterized by a number of surface-sensitive techniques and both the interface and the bulk material have been examined with high resolution transmission electron microscopy (HRTEM). We find that an interlayer, which is most likely SiSex, is present between the ZnSe film and the Si substrate for growths made at 300 °C and causes loss of epitaxy. In the case of room temperature deposition and SPE, it is absent, leading to good epitaxy. In the latter situation, the films are very uniform and there is a 4° rotation of the ZnSe crystal axes relative to those of the Si substrate.

Self-Organization of Cobalt-Silicide Nanoislands on Stepped Si(111) as a Function of Growth Method

2008 ◽  
Vol 8 (2) ◽  
pp. 801-805 ◽  
Author(s):  
I. Goldfarb ◽  
M. Levinshtein
Keyword(s):  
Size Effects ◽  
Room Temperature ◽  
Solid Phase ◽  
Self Organization ◽  
Solid Phase Epitaxy ◽  
Silicide Formation ◽  
Reactive Deposition ◽  
Growth Method ◽  
Single Electron Devices ◽  
Growth Methods

When silicides, such as CoSi2, are grown in the form of nanoislands they frequently exhibit nanometer size effects, which can be useful for single electron devices. For such devices, however, lateral self-organization is required. In this work, step-aided self-organization of CoSi2 nanoislands is demonstrated on a vicinal (stepped) Si(111) substrate. Straight and equidistant steps or step-bunches are routinely obtained on the vicinal Si(111), creating almost ideal template for self-organization. Two growth methods were examined: solid-phase epitaxy (SPE), where Co was deposited at room temperature and annealed to promote silicide formation, and reactive deposition epitaxy (RDE) where Co was deposited at elevated temperature. While the latter did not result in any noticeable ordering, due to instantaneous reaction with Si in course of deposition, the former lead to preferential occupation of step-bunch sites by the silicide nanoislands. Furthermore, self-limiting growth caused narrow distribution of island sizes and island–island separation distances.

Growth and Characterization of Heteroepitaxial GaAs on Semiconductor-on-Insulator and Insulating Substrates

1989 ◽  
Vol 145 ◽  
Author(s):  
T.P. Humphreys ◽  
K. Das ◽  
N.R. Parikh ◽  
J.B. Posthill ◽  
R.J. Nemanich ◽  
...  
Keyword(s):  
Molecular Beam ◽  
Solid Phase ◽  
Chemical Vapor ◽  
Solid Phase Epitaxy ◽  
Molecular Beam Epitaxial ◽  
Chemical Vapor Deposited ◽  
Gaas Films ◽  
Molecular Beam Epitaxial Growth ◽  
Crystallographic Orientations

AbstractA systematic study pertaining to the molecular beam epitaxial growth and charac- terization of GaAs films on various crystallographic orientations of sapphire is presented. For integration with silicon circuitry, heteroepitaxial GaAs layers have also been grown on commercially-available chemical vapor deposited silicon-on-sapphire (SOS) and SOS substrates that have been upgraded by the double solid-phase epitaxy process.

Ge δ-Layers on Si(111) and Si(001) Grown by MBE and SPE

1994 ◽  
Vol 375 ◽  
Author(s):  
J. Falta ◽  
T. Gog ◽  
G. Materlik ◽  
B. H. Müjller ◽  
M. Horn-Von Hoegen
Keyword(s):  
Room Temperature ◽  
Molecular Beam ◽  
Solid Phase ◽  
Standing Waves ◽  
Solid Phase Epitaxy ◽  
High Crystalline Quality ◽  
X Ray ◽  
High Annealing

AbstractGe δ-layers on Si(111) and Si(001), grown by molecular beam epitaxy (MBE) and solid phase epitaxy (SPE) were characterized in-situ by high-resolution low-energy electrondiffraction and post-growth by x-ray standing waves. LEED intensity oscillations are used to determine the growth mode of Ge on Si which is found to proceed in a double bilayer fashion for Ge on Si(111). X-ray standing waves are employed to investigate crystal quality of the Ge layer. SPE on Si(111) requires high annealing temperatures (600°C) for sufficient recrystallization of defects in the Ge δ-layer. On Si(001), Ge δ-layers of surprisingly high crystalline quality are grown by solid phase epitaxy at room temperature.

GROWTH AND CHARACTERIZATION OF EPITAXIAL Si/CoSi2 AND Si/CoSi2/Si HETEROSTRUCTURES

1985 ◽  
Vol 56 ◽  
Author(s):  
B.D. HUNT ◽  
N. LEWIS ◽  
E.L. HALL ◽  
L.G. JTURNER ◽  
L.J. SCHOWALTER ◽  
...  
Keyword(s):  
Surface Roughness ◽  
Growth Temperature ◽  
Molecular Beam ◽  
Solid Phase ◽  
Solid Phase Epitaxy ◽  
Cross Sectional ◽  
Reactive Deposition ◽  
Ion Channeling ◽  
Formation Method

AbstractThin (<200Å), epitaxial CoSi2 films have been grown on (111) Siwafers in a UHV system using a variety of growth techniques including solid phase epitaxy (SPE), reactive deposition epitaxy (RDE), and molecular beam epitaxy (MBE). SEN and TEN studies reveal significant variations in the epitaxial silicide surface morphology as a function of the sillciqd formation method. Pinhole densities are generally greater than 107 cm-2, although some reduction can be achieved by utilizing proper growth techniques. Si epilayers were deposited over the CoSi2 films inthe temperature range from 550ºC to 800ºC, and the reesuulttinng structures have been characterized using SEM, cross—sectional TEN, and ion channeling measurements. These measurements show that the Si epitaxial quality increases with growth temperature, although the average Si surface roughness and the CoSi2 pinhole density also increase as the growth temperature is raised.

Direct-Gap Photoluminescence from a Si-Ge Multilayer Super Unit Cell Grown on Si0.4Ge0.6

2018 ◽  
Author(s):  
David J. Lockwood ◽  
N.L. Rowell ◽  
L. Favre ◽  
A. Ronda ◽  
I. Berbezier
Keyword(s):  
Molecular Beam ◽  
Light Emission ◽  
Solid Phase ◽  
Unit Cell ◽  
Emission Lines ◽  
Solid Phase Epitaxy ◽  
Light Emitters ◽  
Band Gap Engineering ◽  
Optical Fiber Applications ◽  
Weak Peak

Both Si and Ge possess indirect band gaps, which makes them very inefficient light emitters. One way to overcome this limitation is through band gap engineering. In this regard, M. d’Avezac et al. [Phys. Rev. Lett., 108, 027401 (2012)] predicted that a strained SiGe2Si2Ge2SiGen super unit cell on Si0.4Ge0.6 would have a direct and dipole-allowed gap of 0.863 eV, which is ideally suited for optical fiber applications. Here we report on the epitaxial growth of such a structure and its optical properties, for which purpose two similar samples were prepared by molecular beam epitaxy and solid phase epitaxy. Photoluminescence (PL) spectra were obtained at low temperatures (6–25 K) with excitation at wavelengths of 405 and 458 nm, selected to emphasize the light emission from the sample superstructure. A strong low-energy PL quadruplet is seen, with peaks near 727, 758, 792 and 822 meV at 6 K, together with a much weaker peak at 871 MeV. The ratio of intensities of the strong and weak peaks is the same in both samples. The weak peak at 871 meV is assigned to the dipole-allowed direct-gap transition associated with the super unit cell. The four strong peaks are attributed to dislocation related emission lines of the thick relaxed Si0.4Ge0.6 transition layer on Si.

Segregation and Trapping of Erbium in Silicon at a Crystal-Amorphous or Crystal-Vacuum Interface

1996 ◽  
Vol 422 ◽  
Author(s):  
A. Polman ◽  
R. Serna ◽  
J. S. Custer ◽  
M. Lohmeier
Keyword(s):  
Molecular Beam Epitaxy ◽  
Epitaxial Growth ◽  
Growth Model ◽  
Molecular Beam ◽  
Solid Phase ◽  
Solid Phase Epitaxy ◽  
Kinetic Growth ◽  
Vacuum Interface ◽  
Amorphous Si

AbstractThe incorporation of erbium in silicon is studied during solid phase epitaxy (SPE) of Erimplanted amorphous Si on crystalline Si, and during Si molecular beam epitaxy (MBE). Segregation and trapping of Er is observed on Si(100), both during SPE and MBE. The trapping during SPE shows a discontinuous dependence on Er concentration, attributed to the effect of defect trap sites in the amorphous Si near the interface. Trapping during MBE is described by a continuous kinetic growth model. Above a critical Er density (which is lower for MBE than for SPE), growth instabilities occur, attributed to the formation of silicide precipitates. No segregation occurs during MBE on Si(111), attributed to the epitaxial growth of silicide precipitates.

Laser Processing in Silicon Molecular Beam Epitaxy

1981 ◽  
Vol 4 ◽  
Author(s):  
T. De Jong ◽  
L. Smit ◽  
V.V. Korablev ◽  
F.W. Saris
Keyword(s):  
Molecular Beam Epitaxy ◽  
Laser Processing ◽  
Room Temperature ◽  
Molecular Beam ◽  
Pulsed Laser ◽  
Epitaxial Layers ◽  
Epitaxial Silicon ◽  
Temperature Deposition ◽  
Substrate Surfaces

ABSTRACTWe have grown epitaxial silicon films on silicon (100), (110) and (111) oriented substrates, using pulsed ruby laser irradiation as a means to obtain clean, ordered substrate surfaces. On these surfaces epitaxial layers were grown in two ways: I. Rȯom temperature deposition and pulsed laser induced epitaxy of 100–300 nm films was carried out repeatedly, yielding ∼1 μm thick epitaxial layers. II. Low temperature molecular beam epitaxy (M.B.E.), even at 250°C on Si(100),of layers up to 1 μm.Applying the second technique to implanted substrates, we annealed and cleaned arsenic implanted silicon (100) samples in situ, and produced epitaxial overlayers of 100–1000 nm, thus creating a buried n-type channel in silicon.

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