Growth and Characterization of Heteroepitaxial GaAs on Semiconductor-on-Insulator and Insulating Substrates

1989 ◽  
Vol 145 ◽  
Author(s):  
T.P. Humphreys ◽  
K. Das ◽  
N.R. Parikh ◽  
J.B. Posthill ◽  
R.J. Nemanich ◽  
...  
Keyword(s):  
Molecular Beam ◽  
Solid Phase ◽  
Chemical Vapor ◽  
Solid Phase Epitaxy ◽  
Molecular Beam Epitaxial ◽  
Chemical Vapor Deposited ◽  
Gaas Films ◽  
Molecular Beam Epitaxial Growth ◽  
Crystallographic Orientations

AbstractA systematic study pertaining to the molecular beam epitaxial growth and charac- terization of GaAs films on various crystallographic orientations of sapphire is presented. For integration with silicon circuitry, heteroepitaxial GaAs layers have also been grown on commercially-available chemical vapor deposited silicon-on-sapphire (SOS) and SOS substrates that have been upgraded by the double solid-phase epitaxy process.

Molecular Beam Epitaxial Growth and Characterization of GaAs Films on Thin Si Substrates

1998 ◽  
Vol 37 (Part 1, No. 1) ◽  
pp. 39-44 ◽  
Author(s):  
Kenzo Maehashi ◽  
Hisao Nakashima ◽  
Frank Bertram ◽  
Peter Veit ◽  
Jürgen Christen
Keyword(s):  
Epitaxial Growth ◽  
Molecular Beam ◽  
Si Substrates ◽  
Molecular Beam Epitaxial ◽  
Gaas Films ◽  
Molecular Beam Epitaxial Growth

GROWTH AND CHARACTERIZATION OF EPITAXIAL Si/CoSi2 AND Si/CoSi2/Si HETEROSTRUCTURES

1985 ◽  
Vol 56 ◽  
Author(s):  
B.D. HUNT ◽  
N. LEWIS ◽  
E.L. HALL ◽  
L.G. JTURNER ◽  
L.J. SCHOWALTER ◽  
...  
Keyword(s):  
Surface Roughness ◽  
Growth Temperature ◽  
Molecular Beam ◽  
Solid Phase ◽  
Solid Phase Epitaxy ◽  
Cross Sectional ◽  
Reactive Deposition ◽  
Ion Channeling ◽  
Formation Method

AbstractThin (<200Å), epitaxial CoSi2 films have been grown on (111) Siwafers in a UHV system using a variety of growth techniques including solid phase epitaxy (SPE), reactive deposition epitaxy (RDE), and molecular beam epitaxy (MBE). SEN and TEN studies reveal significant variations in the epitaxial silicide surface morphology as a function of the sillciqd formation method. Pinhole densities are generally greater than 107 cm-2, although some reduction can be achieved by utilizing proper growth techniques. Si epilayers were deposited over the CoSi2 films inthe temperature range from 550ºC to 800ºC, and the reesuulttinng structures have been characterized using SEM, cross—sectional TEN, and ion channeling measurements. These measurements show that the Si epitaxial quality increases with growth temperature, although the average Si surface roughness and the CoSi2 pinhole density also increase as the growth temperature is raised.

Molecular beam epitaxial growth and characterization of CoAl on AlAs/GaAs

1991 ◽  
Vol 59 (24) ◽  
pp. 3115-3117 ◽  
Author(s):  
M. Tanaka ◽  
H. Sakakibara ◽  
T. Nishinaga
Keyword(s):  
Epitaxial Growth ◽  
Molecular Beam ◽  
Molecular Beam Epitaxial ◽  
Molecular Beam Epitaxial Growth
Sign in / Sign up

Export Citation Format

Share Document