Solid-phase epitaxy of amorphous silicon induced by electron irradiation at room temperature

1987 ◽  
Vol 36 (15) ◽  
pp. 8038-8042 ◽  
Author(s):  
G. Lulli ◽  
P. G. Merli ◽  
M. Vittori Antisari
Keyword(s):  
Amorphous Silicon ◽  
Electron Irradiation ◽  
Room Temperature ◽  
Solid Phase ◽  
Solid Phase Epitaxy

Solid Phase Epitaxy of Implanted Silicon by Electron Irradiation at Room Temperature

1988 ◽  
Vol 100 ◽  
Author(s):  
G. Lulli ◽  
P. G. Merli ◽  
M. Vittori Antisari
Keyword(s):  
Electron Irradiation ◽  
Cross Sections ◽  
Room Temperature ◽  
Diffusion Length ◽  
Solid Phase ◽  
Basic Mechanism ◽  
Radiation Defects ◽  
Solid Phase Epitaxy ◽  
Transmission Electron

ABSTRACTSolid-phase epitaxy of implanted Si is observed at room temperature during in situ electron irradiation in a Transmission Electron Microscope. Results obtained from irradiation of cross sections of samples containing different doping species show that: i) the basic mechanism of the process is the migration and recombination at the amorphous-crystalline interface of radiation defects coming both from the amorphous and crystalline side; ii) the diffusion length of such defects is of the order of 40 nm; iii) the regrowth rate is impurity dependent: a factor two exists between the faste

scholarly journals Hydrogen refinement during solid phase epitaxy of buried amorphous silicon layers

2010 ◽  
Vol 108 (4) ◽  
pp. 044901 ◽  
Author(s):  
D. J. Pyke ◽  
J. C. McCallum ◽  
B. C. Johnson
Keyword(s):  
Amorphous Silicon ◽  
Solid Phase ◽  
Solid Phase Epitaxy

Solid phase epitaxy of evaporated amorphous silicon films

1984 ◽  
Vol 45 (8) ◽  
pp. 874-876 ◽  
Author(s):  
M. Milosavljević ◽  
C. Jeynes ◽  
I. H. Wilson
Keyword(s):  
Amorphous Silicon ◽  
Solid Phase ◽  
Silicon Films ◽  
Solid Phase Epitaxy

Ni-Induced Selective Nucleation and Solid Phase Epitaxy of Large-Grained Poly-Si on Glass

1999 ◽  
Vol 587 ◽  
Author(s):  
Rosaria A. Puglisi ◽  
Hiroshi Tanabe ◽  
Claudine M. Chen ◽  
Harry A. Atwater ◽  
Emanuele Rimini
Keyword(s):  
Amorphous Silicon ◽  
Polycrystalline Silicon ◽  
Crystalline Silicon ◽  
Solid Phase ◽  
Silicon Film ◽  
Crystallization Rate ◽  
Silicon Films ◽  
Solid Phase Epitaxy ◽  
Tem Analysis ◽  
Glass Substrates

AbstractWe investigated the formation of large-grain polycrystalline silicon films on glass substrates for application in low-cost thin film crystalline silicon solar cells. Since use of glass substrates constrains process temperatures, our approach to form large-grain polycrystalline silicon templates is selective nucleation and solid phase epitaxy (SNSPE). In this process, selective crystallization of an initially amorphous silicon film, at lithographically predetermined sites, enables grain sizes larger than those observed via random crystallization. Selective heterogeneous nucleation centers were created on undoped, 75 nm thick, amorphous silicon films, by masked implantation of Ni islands, followed by annealing at temperatures below 600 °. At this temperature, the Ni precipitates into NiSi2 particles that catalyze the transition from the amorphous to the crystalline Si phase. Seeded crystallization begins at the metal islands and continues via lateral solid phase epitaxy (SPE), thus obtaining crystallized regions of several tens of square microns in one hour. We have studied the dependence of the crystallization rate on the Ni-implanted dose in the seed, in the 5×1015/cm3 - 1016/cm3range. The large grained polycrystalline Si films were then used as a substrate for molecular beam epitaxy (MBE) depositions of 1 [.proportional]m thick Si layers. Transmission electron microscopy (TEM) analysis showed a strong correlation between the substrate morphology and the deposited layer. The layer presented a large grain morphology, with sizes of about 4 [.proportional]m.

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