Characteristics of Palladium Thin Films Deposited by the Ionized Cluster Beam Technique

1991 ◽  
Vol 239 ◽  
Author(s):  
Maria Huffman ◽  
T. S. Kalkur ◽  
L. Kammerdiner ◽  
R. Kwor ◽  
L. L. Levenson ◽  
...  
Keyword(s):  
Grain Size ◽  
Substrate Temperature ◽  
Substrate Surface ◽  
Silicon Substrates ◽  
Cluster Beam ◽  
X Ray Diffraction ◽  
Transmission Electron ◽  
Neutral Mode ◽  
Almost All ◽  
Substrate Temperatures

ABSTRACTAn ionized cluster beam (ICB) source was used to deposit Pd onto oxidized silicon substrates. The ICB source was operated in both the neutral mode (no ionization and no acceleration) and in the ICB mode with ionization and acceleration voltages at 3 kV and 6 k.V. Also, substrate temperatures were varied between 100°C and 400°C. The Pd film thicknesses were generally between 1, 200Å and 1, 800Å, with one film thickness about 500Å. The films were examined by transmission electron microscopy (TEM), transmission electron diffraction (TED), and x-ray diffraction (XRD). Grain size measurements by TEM and XRD showed that ionization and acceleration of Pd resulted in a slight increase in grain size compared to films deposited without ionization or acceleration at any substrate temperature. However, the grain size increased significantly as the substrate temperature rose. XRD showed that all ICB deposited Pd films have significant (111) texturing as determined by comparison to XRD data for Pd powder. For Pd films deposited at 400°C, almost all grains were oriented with the (111) planes parallel to the substrate surface. The electrical conductivity of all Pd films was comparable to that of bulk Pd.

Growth of High Quality Poly-SiGe on Glass Substrates

1996 ◽  
Vol 452 ◽  
Author(s):  
Kunihiro Shiota ◽  
Daisuke Inoue ◽  
Kouichirou Minami ◽  
Masaji Yamamoto ◽  
Jun-ichi Hanna
Keyword(s):  
Electron Microscopy ◽  
Gas Flow ◽  
Growth Parameters ◽  
Substrate Surface ◽  
Silicon Substrates ◽  
X Ray Diffraction ◽  
Glass Substrates ◽  
Transmission Electron ◽  
Composition Variation ◽  
Gas Flow Ratio

AbstractThe composition variation and strutural properties of poly-SiGe thin films were investigated by Reactive Thermal CVD with Si2H6 and GeF4. Deposition of the films was carried out at a low temperature of 450°C on oxidized silicon substrates using different growth parameters, i.e., the source gas flow ratio (Si2H6/ GeF4) and thegas flow rate. The structural profiles of as-deposited films were characterized by X-ray diffraction (XRD) and Raman scattering spectroscopies, scanning electron microscopy (SEM) and transmission electron microscopy (TEM).All these films show (220) preferential orientation. The mole fractions of Si in poly-SixGe1−x films were estimated to be from 0.95 to 0.05 for x by using Vegard's law for the XRD peaks. TEM observation revealed that high crystallinity was well established even in poly-Si0.95Ge0.05 films owing to the direct nucleation on the substrate surface.

Effects of Microstructure on Photoluminescence of SrS:Eu2+,SM3+ thin Films

1993 ◽  
Vol 301 ◽  
Author(s):  
Susan Z. Hua ◽  
L. Salamanca-Riba ◽  
M. Wuttig ◽  
P. K. Soltani
Keyword(s):  
Thin Films ◽  
Substrate Temperature ◽  
Growth Rates ◽  
Growth Conditions ◽  
Photoluminescence Properties ◽  
X Ray Diffraction ◽  
X Ray ◽  
Transmission Electron ◽  
Substrate Temperatures ◽  
The Eu

ABSTRACTThe microstructure and its effects on the photoluminescence properties of SrS:Eu2+,Sm3+ thin films grown with different conditions were studied by transmission electron microscopy, x-ray diffraction and photoluminescence techniques. The SrS:Eu2+,Sm3+ thin films were prepared by e-beam evaporation at different substrate temperatures and growth rates. Both of these growth conditions affect the crystallinity of the thin films. The Sm3+ emission is stronger in the films grown at higher growth rates and at an optimum substrate temperature. We believe that the stronger Sm3+ emission is due to the higher population of Sm trivalent charge states in the films. Further increase of the substrate temperature increases the grain size in the films, but has no significant effect on the PL emission properties. In contrast, the Eu2+ emission is less sensitive to growth conditions.

An Epitaxial Si/insulator/Si Structure Prepared by Vacuum Deposition of CaF2 and Silicon

1981 ◽  
Vol 10 ◽  
Author(s):  
T. Asano ◽  
H. Ishiwara
Keyword(s):  
Substrate Temperature ◽  
Silicon Film ◽  
Single Crystal Silicon ◽  
Rutherford Backscattering ◽  
Film Deposition ◽  
Silicon Substrates ◽  
Optimum Conditions ◽  
Crystal Silicon ◽  
Transmission Electron ◽  
Substrate Temperatures

Heteroepitaxial CaF2/Si and Si/CaF2/Si structures were prepared by conventional vacuum evaporation of CaF2 and silicon onto silicon substrates. The optimum conditions for obtaining good epitaxial films were investigated by changing the silicon substrate orientation, the film thickness and the substrate temperature during film deposition. From Rutherford backscattering and channelling spectroscopy it was found that CaF2 films with excellent film quality were obtained on Si(111), Si(110) and Si(100) substrates at substrate temperatures of 600– 800°C, 800°C and 500–600°C respectively. It was also found from Rutherford backscattering and channelling spectroscopy and from transmission electron microscopy that single-crystal silicon films are formed on a CaF2/Si(111) structure at a substrate temperature of 700°C. From measurements of the electrical properties of the top silicon film after the implantation of phosphorus ions at 2 ×1015 cm−2 and subsequent annealing at 750°C, an electron Hall mobility of 69cm2 V−1 s−1 was obtained.

The Morphology of Polytetrafluoroethylene (PTFE) Thin Films Formed by Pulsed-Laser Deposition

1995 ◽  
Vol 385 ◽  
Author(s):  
M. Grant Norton ◽  
Wenbiao Jiang ◽  
J. Thomas Dickinson
Keyword(s):  
Thin Films ◽  
Substrate Temperature ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Interface Plane ◽  
X Ray Diffraction ◽  
Transmission Electron ◽  
Film Substrate ◽  
Substrate Temperatures

ABSTRACTThin films of polytetrafluoroethylene have been formed by the pulsed-laser deposition technique. The structure of the films was found to be dependent upon the substrate temperature during deposition. At substrate temperatures from room temperature to 200°C the films were determined, by transmission electron microscopy and X-ray diffraction techniques, to be amorphous. Films formed at higher substrate temperatures were found to contain both amorphous and crystalline components. The data for the crystalline component is consistent with it being highly ordered with the long helical molecular chains aligned parallel to the film-substrate interface plane. The maximum amount of crystalline material occurred when the substrate temperature was close to the melting temperature of the polymer.

Texture and Microstructure Effects on Electromigration Behavior of Aluminum Metallization

1991 ◽  
Vol 225 ◽  
Author(s):  
D. B. Knorr ◽  
K. P. Rodbell ◽  
D. P. Tracy
Keyword(s):  
Grain Size ◽  
Standard Deviation ◽  
Pure Aluminum ◽  
Time To Failure ◽  
X Ray Diffraction ◽  
Aluminum Films ◽  
Failure Data ◽  
Transmission Electron ◽  
Aluminum Metallization ◽  
Microstructure Effects

ABSTRACTPure aluminum films are deposited under a variety of conditions to vary the crystallographic texture. After patterning and annealing at 400°C for 1 hour, electromigration tests are performed at several temperatures. Failure data are compared on the basis of t50 and standard deviation. Microstructure is quantified by transmission electron microscopy for grain size and grain size distribution and by X-ray diffraction for texture. A strong (111) texture significantly improves the electromigration lifetime and decreases the standard deviation in time to failure. This improvement correlates with both the fraction and sharpness of the (111) texture component.

Physical Properties Of Single-Phase Skutterudite Thin-Films (CoSb3 and IrSb3)

1998 ◽  
Vol 545 ◽  
Author(s):  
J. C. Caylor ◽  
A. M. Stacy ◽  
T. Sands ◽  
R. Gronsky
Keyword(s):  
Thin Films ◽  
Substrate Temperature ◽  
Growth Parameters ◽  
X Ray Diffraction ◽  
Adhesion Properties ◽  
Rutherford Back Scattering ◽  
Phonon Component ◽  
Transmission Electron ◽  
Structure Morphology ◽  
High Vapor

AbstractBulk skutterudite phases based on the CoAs3 structure have yielded compositions with a high thermoelectric figure-of-merit (“ZT”) through the use of doping and substitutional alloying. It is postulated that further enhancements in ZT may be attained in artificially structured skutterudites by engineering the microstructure to enhance carrier mobility while suppressing the phonon component of the thermal conductivity. In this work the growth and properties of singlephase CoSb3 and IrSb3 skutterudite thin films are reported. The films are synthesized by pulsed laser deposition (PLD) where the crystallinity can be controlled by the deposition temperature. Powder X-ray diffraction (PXRD), Transmission electron microscopy (TEM) and Rutherford- Back Scattering (RBS) were used to probe phase, structure, morphology and stoichiometry of the films as functions of growth parameters and substrate type. A substrate temperature of 250°C was found to be optimal for the deposition of the skutterudites from stoichiometric targets. Above this temperature the film is depleted of antimony due to its high vapor pressure eventually reaching a composition where the skutterudite structure is no longer stable. However, when films are grown from antimony-rich targets the substrate temperature can be increased to at least 350°C while maintaining the skutterudite phase. In addition, adhesion properties of the films are explored in terms of the growth mode and substrate interaction. Finally, preliminary room temperature electrical and thermal measurements are reported.

Effect of Nitridation Magnetic Properties of Nanocrystalline Fe-Co Alloy Powders

2010 ◽  
Vol 654-656 ◽  
pp. 1106-1109
Author(s):  
Ya Qiong He ◽  
Chang Hui Mao ◽  
Jian Yang
Keyword(s):  
Grain Size ◽  
Magnetic Properties ◽  
Alloy Powder ◽  
High Energy ◽  
X Ray Diffraction ◽  
Powder Mixtures ◽  
X Ray ◽  
Transmission Electron ◽  
Nitridation Temperature ◽  
Microstructure And Magnetic Properties

Nanocrystalline Fe-Co alloy powders, which were prepared by high-energy mechanical milling, were nitrided under the mixing gas of NH3/H2 in the temperature range from 380°C to 510°C. X-ray diffraction (XRD) was used to analyze the grain size and reaction during the processing. The magnetic properties of the nitrided powders were measured by Vibrating Sample Magnetometer (VSM). The results show that with the appearance of Fe4N phase after nitride treatment, and the grain-size of FeCo phase decreases with the increase of nitridation temperature between 380°C to 450°C.The saturation magnetization of nitrided alloy powder treated at 480°C is about 18% higher than that of the initial Fe-Co alloy powder, accompanied by the reduction of the coercivity. Transmission electron microscope (TEM) was used, attempting to further analyze the effect of Fe4N phase on microstructure and magnetic properties of the powder mixtures.

DIRECT GROWTH OF EPITAXIAL La0.67Ca0.33MnO3 - δ THIN FILMS

2002 ◽  
Vol 09 (05n06) ◽  
pp. 1611-1615 ◽  
Author(s):  
G. CAMPILLO ◽  
L. F. CASTRO ◽  
P. VIVAS ◽  
E. BACA ◽  
P. PRIETO ◽  
...  
Keyword(s):  
Thin Films ◽  
Substrate Surface ◽  
Electrical Characterization ◽  
Annealing Treatment ◽  
Pure Oxygen ◽  
X Ray Diffraction ◽  
Atomic Force ◽  
Transmission Electron ◽  
Afm Analysis ◽  
Direct Growth

La 0.67 Ca 0.33 MnO 3 - δ thin films were deposited using a high-pressure dc-sputtering process. Pure oxygen at a pressure of 3.8 mbar was used as sputtering gas. The films were grown on (001) LaAlO 3 and (001) SrTiO 3 substrates at heater temperature of 850° without any annealing treatment. The formation of highly a-axis-oriented films with sharp interface with substrate surface is demonstrated by X-ray diffraction, transmission electron microscope (TEM), and atomic force microscope (AFM) analysis. Electrical characterization revealed a metal–insulator transition at T MI = 276 K, and magnetic characterization showed good magnetic properties with a PM–FM transition at TC ≈ 262 K.

Properties of Al Films Depend on Substrate Temperature by DC Magnetron Sputter Deposition

2013 ◽  
Vol 662 ◽  
pp. 413-416
Author(s):  
Yi Shen ◽  
Ruo He Yao
Keyword(s):  
Grain Size ◽  
Film Thickness ◽  
Substrate Temperature ◽  
Sheet Resistance ◽  
Cross Section ◽  
Sputter Deposition ◽  
Surface Profiling ◽  
Magnetron Sputter Deposition ◽  
Magnetron Sputter ◽  
Substrate Temperatures

Al films were prepared by DC magnetron sputter deposition at different substrate temperatures. The sheet resistance of the films was measured by four point probe sheet resistance meter, and the film thickness, which was obtained by surface profiling system. The surface and cross-section morphology of the films was observed by AFM and FESEM. As a result, the resistivity of the films decreases obviously as the substrate temperature increases gradually. The higher substrate temperature is, the rougher the films surface is and the larger the grain size is.

Effect of Substrate Temperature on the Electrochromic Properties of Cobalt Hydroxide Thin Films Prepared by Reactive Sputtering

2011 ◽  
Vol 1328 ◽  
Author(s):  
KyoungMoo Lee ◽  
Yoshio Abe ◽  
Midori Kawamura ◽  
Hidenobu Itoh
Keyword(s):  
Thin Films ◽  
Substrate Temperature ◽  
Indium Tin Oxide ◽  
Large Change ◽  
Amorphous Structure ◽  
Cobalt Hydroxide ◽  
X Ray Diffraction ◽  
X Ray ◽  
Glass Substrates ◽  
Substrate Temperatures

ABSTRACTCobalt hydroxide thin films with a thickness of 100 nm were deposited onto glass, Si and indium tin oxide (ITO)-coated glass substrates by reactively sputtering a Co target in H2O gas. The substrate temperature was varied from -20 to +200°C. The EC performance of the films was investigated in 0.1 M KOH aqueous solution. X-ray diffraction (XRD) and Fourier transform infrared (FTIR) spectroscopy of the samples indicated that Co3O4 films were formed at substrate temperatures above 100°C, and amorphous CoOOH films were deposited in the range from 10 to -20°C. A large change in transmittance of approximately 26% and high EC coloration efficiency of 47 cm2/C were obtained at a wavelength of 600 nm for the CoOOH thin film deposited at -20°C. The good EC performance of the CoOOH films is attributed to the low film density and amorphous structure.

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