Effect of Substrate Temperature on the Electrochromic Properties of Cobalt Hydroxide Thin Films Prepared by Reactive Sputtering

2011 ◽  
Vol 1328 ◽  
Author(s):  
KyoungMoo Lee ◽  
Yoshio Abe ◽  
Midori Kawamura ◽  
Hidenobu Itoh
Keyword(s):  
Thin Films ◽  
Substrate Temperature ◽  
Indium Tin Oxide ◽  
Large Change ◽  
Amorphous Structure ◽  
Cobalt Hydroxide ◽  
X Ray Diffraction ◽  
X Ray ◽  
Glass Substrates ◽  
Substrate Temperatures

ABSTRACTCobalt hydroxide thin films with a thickness of 100 nm were deposited onto glass, Si and indium tin oxide (ITO)-coated glass substrates by reactively sputtering a Co target in H2O gas. The substrate temperature was varied from -20 to +200°C. The EC performance of the films was investigated in 0.1 M KOH aqueous solution. X-ray diffraction (XRD) and Fourier transform infrared (FTIR) spectroscopy of the samples indicated that Co3O4 films were formed at substrate temperatures above 100°C, and amorphous CoOOH films were deposited in the range from 10 to -20°C. A large change in transmittance of approximately 26% and high EC coloration efficiency of 47 cm2/C were obtained at a wavelength of 600 nm for the CoOOH thin film deposited at -20°C. The good EC performance of the CoOOH films is attributed to the low film density and amorphous structure.

Effects of Substrate Temperature on the Properties of Cu(In,Ga)Se2 Thin Films Prepared by Sputtering from a Quaternary Target

2014 ◽  
Vol 1061-1062 ◽  
pp. 209-214 ◽  
Author(s):  
Zi Yue Yang ◽  
Li Dong Wang ◽  
Rui Xuan Song ◽  
Dong Xing Zhang ◽  
Wei Dong Fei
Keyword(s):  
Thin Films ◽  
Substrate Temperature ◽  
Carrier Mobility ◽  
Hall Effect Measurement ◽  
Chalcopyrite Structure ◽  
X Ray Diffraction ◽  
X Ray ◽  
Structural And Electrical Properties ◽  
Higher Carrier Mobility ◽  
Substrate Temperatures

Cu (In,Ga)Se2(CIGS) thin films were prepared by direct magnetron sputtering CIGS quaternary target at the substrate temperature varying from room temperature (RT) to 300 °C. The effects of substrate temperature on the structural and electrical properties of CIGS films were characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM), energy dispersive X-ray (EDX) and Hall effect measurement. The CIGS thin films with a chalcopyrite structure were obtained between 100 and 300 °C and the crystallinity of films were enhanced with the increase of the substrate temperature from 100 to 300 °C. The film compositions were consisted with the target when the substrate temperatures were between RT and 200 °C, however, it deviated from the stoichiometry of the target when the substrate temperature was 300 °C. The CIGS films deposited at 200 °C had the higher carrier mobility of 3.522 cm2/Vs.

Formation of the high temperature phase in vacuum deposited SnSe thin films

1986 ◽  
Vol 175 (1-2) ◽  
Author(s):  
T. Subba Rao ◽  
B. K. Samantaray ◽  
A. K. Chaudhuri
Keyword(s):  
Thin Films ◽  
High Temperature ◽  
High Temperature Phase ◽  
Temperature Phase ◽  
X Ray Diffraction ◽  
X Ray ◽  
Glass Substrates ◽  
Different Temperatures ◽  
Substrate Temperatures ◽  
Low Temperature Phase

AbstractThin films of SnSe vacuum deposited on glass substrates kept at different temperatures have been studied by X-ray diffraction. It is observed that the high temperature phase of SnSe, usually found above 807 K is frozen in along with the low temperature phase when deposited at substrate temperatures of 473 K and above.

Heteroepitaxial Growth of Epitaxial C60-Thin Films on Mica(001)

1994 ◽  
Vol 359 ◽  
Author(s):  
S. Henke ◽  
K.H. Thürer ◽  
S. Geier ◽  
B. Rauschenbach ◽  
B. Stritzker
Keyword(s):  
Thin Films ◽  
Film Thickness ◽  
Substrate Temperature ◽  
Room Temperature ◽  
Heteroepitaxial Growth ◽  
X Ray Diffraction ◽  
X Ray ◽  
Force Microscopy ◽  
Atomic Force ◽  
Substrate Temperatures

ABSTRACTOn mica(001) thin C60-films are deposited by thermal evaporation at substrate temperatures from room temperature up to 225°C. The dependence of the structure and the epitaxial alignment of the thin C60-films on mica(001) on the substrate temperature and the film thickness up to 1.3 μm at a well-defined deposition rate (0.008 nm/s) is investigated by atomic force microscopy and X-ray diffraction. The shape and the size of the C60-islands, which have an influence on the film quality at larger film thicknesses, are sensitively dependent on the substrate temperature. At a film thickness of 200 nm the increase of the substrate temperature up to 225°C leads to smooth, completely coalesced epitaxial C60-thin films characterized by a roughness smaller than 1.5 nm, a mosaic spread Δω of 0.1° and an azimuthal alignment ΔΦ of 0.45°.

Influence of Substrate Temperature on Structure and Optical Property of Cu3N Thin Films

2010 ◽  
Vol 152-153 ◽  
pp. 218-221
Author(s):  
Jian Rong Xiao ◽  
Ai Hua Jiang ◽  
Ye Guang Liang
Keyword(s):  
Thin Films ◽  
Substrate Temperature ◽  
Optical Transmission ◽  
X Ray Diffraction ◽  
Compact Structure ◽  
Copper Nitride ◽  
X Ray ◽  
Atomic Force ◽  
Influence Of Substrate ◽  
Substrate Temperatures

Copper nitride thin films were prepared by reactive radio frequency magnetron sputtering at various substrate temperatures. The surface morphology and crystal structure of the thin films were characterized by atomic force microscope (AFM) and X-ray diffraction (XRD), respectively. The AFM images demonstrate that the films have a compact structure. The XRD test indicates that growth orientation of the thin films prefers the (111) or (100) at different substrate temperature. The optical transmission properties of the thin films were obtained by an ultraviolet visible spectrometer. The optical band gap of the thin films decreases with increasing substrate temperature.

Effects of Microstructure on Photoluminescence of SrS:Eu2+,SM3+ thin Films

1993 ◽  
Vol 301 ◽  
Author(s):  
Susan Z. Hua ◽  
L. Salamanca-Riba ◽  
M. Wuttig ◽  
P. K. Soltani
Keyword(s):  
Thin Films ◽  
Substrate Temperature ◽  
Growth Rates ◽  
Growth Conditions ◽  
Photoluminescence Properties ◽  
X Ray Diffraction ◽  
X Ray ◽  
Transmission Electron ◽  
Substrate Temperatures ◽  
The Eu

ABSTRACTThe microstructure and its effects on the photoluminescence properties of SrS:Eu2+,Sm3+ thin films grown with different conditions were studied by transmission electron microscopy, x-ray diffraction and photoluminescence techniques. The SrS:Eu2+,Sm3+ thin films were prepared by e-beam evaporation at different substrate temperatures and growth rates. Both of these growth conditions affect the crystallinity of the thin films. The Sm3+ emission is stronger in the films grown at higher growth rates and at an optimum substrate temperature. We believe that the stronger Sm3+ emission is due to the higher population of Sm trivalent charge states in the films. Further increase of the substrate temperature increases the grain size in the films, but has no significant effect on the PL emission properties. In contrast, the Eu2+ emission is less sensitive to growth conditions.

Highly Selective Dimethylamine Sensing Performance of TiO2 Thin Films at Room Temperature

2020 ◽  
Vol 20 (5) ◽  
pp. 3131-3139 ◽  
Author(s):  
Srividhya Ganesan ◽  
Abinaya Muruganandham ◽  
Veena Mounasamy ◽  
Veera Prabu Kannan ◽  
Sridharan Madanagurusamy
Keyword(s):  
Thin Films ◽  
Optical Band Gap ◽  
X Ray Diffraction ◽  
Tio2 Thin Films ◽  
Promising Candidate ◽  
Oxide Semiconductors ◽  
X Ray ◽  
Glass Substrates ◽  
Substrate Temperatures ◽  
Highly Uniform

To date, reports on metal oxide semiconductors for selective detection of dimethylamine (DMA) is in scarce. Hence in our study, we report titanium oxide (TiO2) as a promising candidate for tuned selectivity towards DMA. Highly uniform TiO2 thin films were successfully deposited on glass substrates using reactive dc magnetron sputtering at various substrate temperatures. Polycrystalline nature of rutile TiO2 was confirmed by X-ray diffraction technique (XRD). The uniform surface morphology of the sputtered TiO2 thin films was revealed by Field Emission Scanning Electron Microscopy (FESEM). An upsurge in optical band gap from 3.18 to 3.4 eV was observed with increase in substrate temperature. The sensing studies of the sputtered TiO2 thin films exhibited a significant sensor response towards the lower concentration of DMA at ambient temperature. It is deemed that this work will provide an insight to develop DMA sensors based on TiO2 thin films.

Co-Electrodeposition and Characterization of Ag-Ag2S-PbS Thin Films on Indium-Tin-Oxide Coated Glass

2014 ◽  
Vol 900 ◽  
pp. 397-400 ◽  
Author(s):  
Yuan Ming Zhang ◽  
Lin Chen ◽  
Hong Cheng Pan
Keyword(s):  
Thin Films ◽  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Ethylenediaminetetraacetic Acid ◽  
Disodium Salt ◽  
Metallic Silver ◽  
X Ray Diffraction ◽  
X Ray ◽  
Coated Glass ◽  
Glass Substrates

The Ag-Ag2S-PbS thin films were co-electrodeposited on indium-tin-oxide (ITO) coated glass substrates from aqueous solutions containing 0.01 M AgNO3, 0.01 M Pb (NO3)2, 0.1 M Na2S2O3, 0.02 M ethylenediaminetetraacetic acid disodium salt, and 0.5 M Na2SO4. X-ray diffraction (XRD), scanning electron microscopy (SEM), and cyclic voltammetry (CV) were used to investigate the Ag-Ag2S-PbS thin films. The X-ray diffraction analysis demonstrated the presence of cubic structure of metallic silver, acanthite Ag2S, and cubic PbS, which is consistent with the CV analysis. The effect of different Ag+/Pb2+ratios on the morphology and composition of the Ag-Ag2S-PbS thin films were also studied.

Effect of Substrate Temperature on the Structural and Electrochromic Properties of Mo Doped WO3 Thin Films

2014 ◽  
Vol 781 ◽  
pp. 95-106 ◽  
Author(s):  
V. Madhavi ◽  
P. Kondaiah ◽  
S. Uthanna
Keyword(s):  
Thin Films ◽  
Electron Microscope ◽  
Scanning Electron Microscope ◽  
Substrate Temperature ◽  
Electrochromic Property ◽  
X Ray Diffraction ◽  
X Ray ◽  
Electrochromic Properties ◽  
Substrate Temperatures ◽  
Scanning Electron

Thin films of Mo (1.3 at.%) doped WO3 films were deposited on glass and ITO coated glass substrates held at substrate temperatures in the range 473 673 K by RF magnetron sputtering technique. The effect of substrate temperature on the structural and morphological, and electrochromic properties of the deposited films were investigated by X-ray diffraction, scanning electron microscope, Raman spectroscope and with electrochemical cell. X-ray diffraction profiles showed that the films formed at substrate temperature of 473 K consisted of weak (020) reflection related to the orthorhombic phase of WO3 in the amorphous matrix. The films formed at substrate temperatures 473 K were of polycrystalline in nature. The crystallite size of the films increased from 12 to 43 nm with increase of substrate temperature from 473 to 673 K. The scanning electron microscope images of the films formed at 473 K showed the leaf like structure with grain size of 1.2 μm. When substrate temperature increased to 573 K the size of the grains enhanced to 2.4 μm. Raman spectra of the films confirmed the presence of characteristic vibration modes of W = O, W - O - W and O - W - O. The optical band gap of the films increased with increase of substrate temperature. The electrochromic property, that is the color efficiency increased from 42.5 to 50.5 cm2/C with the increase of substrate temperature from 473 to 673 K respectively. The structural and electrochromic properties of the Mo doped WO3 films will be correlated with the substrate temperature maintained during growth of the films.

scholarly journals Growth of the Electrodeposited NiX2 (X= Te, Se) Thin Films

2020 ◽  
pp. 55-69
Author(s):  
T. Joseph Sahaya Anand ◽  
Rajes K. M. Rajan ◽  
Md Radzai Said ◽  
Lau Kok Tee
Keyword(s):  
Thin Films ◽  
Indium Tin Oxide ◽  
Compositional Analysis ◽  
Cost Effective ◽  
Xrd Analysis ◽  
Potential Range ◽  
X Ray Diffraction ◽  
X Ray ◽  
Glass Substrates ◽  
P Type

Thin films of nickel chalcogenide, NiX2 (X= Te, Se) have been electrosynthesized on indium-tin-oxide (ITO) coated glass substrates. The films were characterized for their structural, morphological and compositional characteristics. Consisting of transition metals and chalcogenides (S, Se and Te), they show promising solar absorbent properties such as semiconducting band gap, well adhesion to substrate and good conversion with better cost-effective. Cyclic voltammetry experiments have been done prior to electrodeposition in order to get the electrodeposition potential range where the observable reduction range is between -0.9-(-1.1) V. Their optical and semiconducting parameters were also analysed in order to determine the suitability of the thin films for photoelectrochemical (PEC) / solar cell applications. Structural analysis via X-ray diffraction (XRD) analysis reveals that the films are polycrystalline in nature. Scanning electron microscope (SEM) studies reveals that the films were adherent to the substrate with uniform and pin-hole free. Compositional analysis via energy dispersive X-ray (EDX) technique confirms the presence of Ni, Te, and Se elements in the films. The optical studies show that the films are of direct bandgap. Results on the semiconductor parameters analysis of the films showed that the nature of the Mott-Schottky plots indicates that the films obtained are of p-type material.

Effect of Substrate Temperature on the Preparation of Cu2ZnSnSe4 Thin Films

2011 ◽  
Vol 130-134 ◽  
pp. 895-899
Author(s):  
Lei Han ◽  
Zhe Sheng Chen ◽  
Lei Wan ◽  
Jin Zhang Xu
Keyword(s):  
Thin Films ◽  
Substrate Temperature ◽  
Energy Dispersive Spectrometer ◽  
Temperature Treatment ◽  
X Ray Diffraction ◽  
X Ray ◽  
Scattering Spectrum ◽  
Surface Morphologies ◽  
Substrate Temperatures ◽  
Selenization Process

The Cu2ZnSnSe4 (CZTSe) thin films were prepared by co-electroplating Cu-Zn-Sn precursors followed by selenization at different substrate temperatures. The effect of substrate temperatures on the morphologies and structures of CZTSe films were characterized using scanning electron microscopy (SEM), energy dispersive spectrometer (EDS), X-ray diffraction (XRD) and Raman scattering spectrum respectively. The results revealed that the impurity phases in CZTSe thin films such as CuSe and SnSe disappeared when the substrate temperatures were increased. The surface morphologies of CZTSe thin films were also strongly dependent on the substrate temperature treatment in the selenization process though the selenium temperature was kept at 340°C.

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