The Morphology of Polytetrafluoroethylene (PTFE) Thin Films Formed by Pulsed-Laser Deposition

1995 ◽  
Vol 385 ◽  
Author(s):  
M. Grant Norton ◽  
Wenbiao Jiang ◽  
J. Thomas Dickinson
Keyword(s):  
Thin Films ◽  
Substrate Temperature ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Interface Plane ◽  
X Ray Diffraction ◽  
Transmission Electron ◽  
Film Substrate ◽  
Substrate Temperatures

ABSTRACTThin films of polytetrafluoroethylene have been formed by the pulsed-laser deposition technique. The structure of the films was found to be dependent upon the substrate temperature during deposition. At substrate temperatures from room temperature to 200°C the films were determined, by transmission electron microscopy and X-ray diffraction techniques, to be amorphous. Films formed at higher substrate temperatures were found to contain both amorphous and crystalline components. The data for the crystalline component is consistent with it being highly ordered with the long helical molecular chains aligned parallel to the film-substrate interface plane. The maximum amount of crystalline material occurred when the substrate temperature was close to the melting temperature of the polymer.

Influence of Substrate Temperature in Plasma Assisted Pulsed Laser Deposition of Hydroxyapatite Thin Films

2006 ◽  
Vol 514-516 ◽  
pp. 1029-1033
Author(s):  
Eugenio Luís Solla ◽  
Jacinto P. Borrajo ◽  
Pio González ◽  
Julia Serra ◽  
Stefano Chiussi ◽  
...  
Keyword(s):  
Thin Films ◽  
Substrate Temperature ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Rf Discharge ◽  
Rf Plasma ◽  
X Ray Diffraction ◽  
Influence Of Substrate ◽  
Substrate Temperatures

The bioactive properties of hydroxyapatite (HA) are well known in the implant industry and coatings of HA have been used to enhance the adhesion of living tissue to metal prostheses. Pulsed laser deposition (PLD) in a water vapour atmosphere is an appropriate method for the production of crystalline HA coatings. In this work the effect of RF plasma on thin films of HA grown by PLD at different substrate temperatures has been studied. The physicochemical properties of the films were studied by Fourier transform infrared spectroscopy (FTIR), X-ray diffraction (XRD) and energy dispersive spectroscopy (EDS), showing that the incorporation of RF discharge in the deposition chamber can lead to changes in the crystallinity and deposition rate of the films but substrate temperature still plays the most important role.

Pulsed-laser deposition of polytetrafluoroethylene

1995 ◽  
Vol 10 (4) ◽  
pp. 1038-1043 ◽  
Author(s):  
Wenbiao Jiang ◽  
M. Grant Norton ◽  
Lancy Tsung ◽  
J. Thomas Dickinson
Keyword(s):  
Substrate Temperature ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Crystalline Material ◽  
Laser Deposition ◽  
Interface Plane ◽  
Transmission Electron ◽  
Amorphous Substrates ◽  
Film Substrate ◽  
Crystalline Component

Thin films of polytetrafluoroethylene have been deposited on amorphous substrates by the pulsed-laser deposition technique. By transmission electron microscopy, the polymer films were shown to consist of both amorphous and crystalline components. The data for the crystalline component are consistent with it being highly ordered with the long helical molecular chains aligned parallel to the film substrate interface plane. The fraction of crystalline material in the films was found to be related to the substrate temperature during deposition with the maximum amount of crystalline material occurring when the substrate temperature was close to the melting temperature of the polymer.

The effect of target crystallography on the growth of Pb(Mg1/3Nb2/3)O3 thin films using pulsed laser deposition

1999 ◽  
Vol 14 (6) ◽  
pp. 2355-2358 ◽  
Author(s):  
M. H. Corbett ◽  
G. Catalan ◽  
R. M. Bowman ◽  
J. M. Gregg
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Growth Conditions ◽  
Laser Deposition ◽  
X Ray Diffraction ◽  
Plan View ◽  
X Ray ◽  
Transmission Electron ◽  
Lead Magnesium

Pulsed laser deposition has been used to make two sets of lead magnesium niobate thin films grown on single-crystal h100j MgO substrates. One set was fabricated using a perovskite-rich target while the other used a pyrochlore-rich target. It was found that the growth conditions required to produce almost 100% perovskite Pb(Mg1/3Nb2/3)O3 (PMN) films were largely independent of target crystallography. Films were characterized crystallographically using x-ray diffraction and plan view transmission electron microscopy, chemically using energy dispersive x-ray analysis, and electrically by fabricating a planar thin film capacitor structure and monitoring capacitance as a function of temperature. All characterization techniques indicated that perovskite PMN thin films had been successfully fabricated.

EFFECT OF SUBSTRATE TEMPERATURE ON THE CRYSTALLINITY AND BAND EDGE LUMINESCENCE OF ZnO THIN FILMS DEPOSITED BY PULSED LASER DEPOSITION

2012 ◽  
Vol 26 (30) ◽  
pp. 1250161 ◽  
Author(s):  
D. ZHANG ◽  
C. Z. WANG ◽  
F. X. ZHANG
Keyword(s):  
Substrate Temperature ◽  
Pulsed Laser Deposition ◽  
Raman Spectra ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
X Ray Diffraction ◽  
X Ray ◽  
Uv Emission ◽  
Band Edge Luminescence ◽  
Substrate Temperatures

Zinc oxide films were deposited on silicon substrates by reactive pulsed laser deposition of zinc target. The effect of substrate temperatures on the crystal and band edge luminescence was studied using X-ray diffraction, scanning electron microscopy and Raman spectra. All the films deposited in the substrate temperatures range from room temperature to 600°C exhibited strong c-axis orientation. The preferred orientation of crystal changed with substrate temperature increase, due to the preferential nucleation at lower temperatures and surface diffusion at higher temperatures. The detailed micro-structural analysis indicated a tensile stress in all the films using X-ray diffraction and Raman spectra. It is interesting that the film deposited at 350°C, which exhibited best crystallinity quality in the X-ray diffraction, rocking curve and the best stoichiometry, less defects in Raman spectra, does not show the most intense UV emission and weakest visible emission. The most intense UV emission was exhibited in the films deposited at 500°C which had the equiaxed grain size.

THE ROLES OF AMBIENT OXYGEN AND SUBSTRATE TEMPERATURE ON GROWTH OF DIAMOND THIN FILMS BY PULSED LASER DEPOSITION

2002 ◽  
Vol 16 (06n07) ◽  
pp. 825-829 ◽  
Author(s):  
TSUYOSHI YOSHITAKE ◽  
TAKASHI NISHIYAMA ◽  
TAKESHI HARA ◽  
KUNIHITO NAGAYAMA
Keyword(s):  
Thin Films ◽  
Substrate Temperature ◽  
Pulsed Laser Deposition ◽  
Single Phase ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Deposition Parameters ◽  
Ambient Oxygen ◽  
Diamond Thin Films ◽  
Substrate Temperatures

Diamond thin films were grown on diamond (100) substrates in oxygen atmospheres by pulsed laser deposition (PLD) using an ArF excimer laser. The suitable oxygen atmosphere of 5 × 10-2 Torr can etch the sp2 bonding fractions preferentially. At substrate temperatures between 550°C and 650°C, single-phase diamond films consisting of diamond crystal with diameters of 1 - 5 μm could be grown. The results demonstrated that the diamond thin films can be grown homoepitaxially using PLD by controlling the deposition parameters, such as the oxygen pressure and the substrate temperature.

Microstructure and Resistivity of Iridium Oxide Thin Films by Pulsed Laser Deposition Technique

2007 ◽  
Vol 336-338 ◽  
pp. 2215-2217
Author(s):  
Lian Meng Zhang ◽  
Yan Sheng Gong ◽  
Chuan Bin Wang ◽  
Qiang Shen
Keyword(s):  
Thin Films ◽  
Substrate Temperature ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Ambient Atmosphere ◽  
Room Temperature Resistivity ◽  
Deposition Technique ◽  
Preferential Growth ◽  
Substrate Temperatures

Highly conductive IrO2 thin films were prepared on Si (100) substrates by pulsed laser deposition technique from an iridium metal target in an oxygen ambient atmosphere. The effect of substrate temperature on the structure and electrical properties of IrO2 films was investigated. The deposited films at substrate temperatures ranging from 250 to 500°C under an oxygen pressure of 20Pa were pure polycrystalline tetragonal IrO2 and the preferential growth orientation changed with the substrate temperature. IrO2 films were well solidified with the fairly homogeneous thickness and exhibited a good adhesion with the substrate. The room-temperature resistivity of IrO2 films decreased with the increase of substrate temperature and the minimum resistivity of (42±6) μ-·cm was deposited at 500°C.

scholarly journals Epitaxial growth of β-Ga2O3 thin films on Ga2O3 and Al2O3 substrates by using pulsed laser deposition

2019 ◽  
Vol 09 (04) ◽  
pp. 1950032 ◽  
Author(s):  
Yuxin An ◽  
Liyan Dai ◽  
Ying Wu ◽  
Biao Wu ◽  
Yanfei Zhao ◽  
...  
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Optical Transmittance ◽  
Laser Deposition ◽  
Ultraviolet Region ◽  
X Ray Diffraction ◽  
Chemical Cleaning ◽  
Transmission Electron ◽  
Xrd Patterns

In this work, we have successfully grown high quality epitaxial [Formula: see text]-Ga2O3 thin films on [Formula: see text]-Ga2O3 (100) and Al2O3(0001) substrates using pulsed laser deposition (PLD). By optimizing temperature and oxygen pressure, the best conditions were found to be 650–700∘C and 0.5[Formula: see text]Pa. To further improve the quality of hetero-epitaxial [Formula: see text]-Ga2O3, the sapphire substrates were pretreated for atomic terraced surface by chemical cleaning and high temperature annealing. From the optical transmittance measurements, the films grown at 600–750∘C exhibit a clear absorption edge at deep ultraviolet region around 250–275[Formula: see text]nm wavelength. High resolution transmission electron microscope (HRTEM) images and X-ray diffraction (XRD) patterns demonstrate that [Formula: see text]-Ga2O3(-201)//Al2O3(0001) epitaxial texture dominated the epitaxial oxide films on sapphire substrate, which opens up the possibilities of high power electric devices.

Properties Study of ZnS Thin Films Fabricated at Different Substrate Temperatures by Pulsed Laser Deposition

2013 ◽  
Vol 821-822 ◽  
pp. 835-840 ◽  
Author(s):  
Zhen Xun Ming ◽  
Chao Ding ◽  
Bing Li ◽  
Jing Quan Zhang ◽  
Wei Li ◽  
...  
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
X Ray Diffraction ◽  
Zinc Blende ◽  
Energy Gaps ◽  
Visible Light Range ◽  
Substrate Temperatures ◽  
Zns Films

This paper focuses on physical properties of ZnS thin films.ZnS thin films were successfully fabricated on Fluorine-Tin-Oxide(FTO) substrates(in a vacuum chamber maintained at 10-6Torr) at the substrate temperatures(Ts) of 150°Cand 200°Cby pulsed laser deposition(PLD),respectively.The structural properties of the ZnS films were analyzed with a X-ray diffraction(XRD) spectroscopy;The surface morphology of ZnS films was examined using scanning electron microscopy(SEM). With the increasing of the substrate temperature,the intensity of the (111) diffraction peak increases clearly and the surface of the ZnS films was more homogeneous and more compact.The main phase of the films deposited at 150°C and 200°C are both cubic-zinc-blende structure.The transmission spectra of the films was measured by UV-Vis spectrophotometer(UV,model a Perkin Elmer-Lambda 950),it shown that the films have the high transmittance in the spectrum of the visible light range,and the optical energy gaps were 3.48eV and 3.54eV,corresponding to the substrate temperatures of 150°C and 200°C.The results shown that the PLD technique can fabricate the better ZnS thin films.

scholarly journals Effects of Oxygen Partial Pressure and Substrate Temperature on the Structure and Morphology of Sc and Y Co-Doped ZrO2 Solid Electrolyte Thin Films Prepared via Pulsed Laser Deposition

Materials ◽  
2022 ◽  
Vol 15 (2) ◽  
pp. 410
Author(s):  
Jennet R. Rabo ◽  
Makoto Takayanagi ◽  
Takashi Tsuchiya ◽  
Hideki Nakajima ◽  
Kazuya Terabe ◽  
...  
Keyword(s):  
Thin Films ◽  
Substrate Temperature ◽  
Oxygen Partial Pressure ◽  
Partial Pressure ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Partial Pressures ◽  
Substrate Temperatures ◽  
Co Doped

Scandium (Sc) and yttrium (Y) co-doped ZrO2 (ScYSZ) thin films were prepared on a SiO2-Si substrate via pulsed laser deposition (PLD) method. In order to obtain good quality thin films with the desired microstructure, various oxygen partial pressures (PO2) from 0.01 Pa to 10 Pa and substrate temperatures (Ts) from 25 °C to 800 °C were investigated. X-ray diffraction (XRD) patterns results showed that amorphous ScYSZ thin films were formed at room substrate temperature while cubic polycrystalline thin films were obtained at higher substrate temperatures (Ts = 200 °C, 400 °C, 600 °C, 800 °C). Raman spectra revealed a distinct Raman shift at around 600 cm−1 supporting a cubic phase. However, a transition from cubic to tetragonal phase can be observed with increasing oxygen partial pressure. Photoemission spectroscopy (PES) spectra suggested supporting analysis that more oxygen vacancies in the lattice can be observed for samples deposited at lower oxygen partial pressures resulting in a cubic structure with higher dopant cation binding energies as compared to the tetragonal structure observed at higher oxygen partial pressure. On the other hand, dense morphologies can be obtained at lower  PO2 (0.01 Pa and 0.1 Pa) while more porous morphologies can be obtained at higher PO2 (1.0 Pa and 10 Pa).

Microstructural and Electrical Characterization of Barium Strontium Titanatebased Solid Solution Thin Films Deposited on Ceramic Substrates by Pulsed Laser Deposition

2002 ◽  
Vol 720 ◽  
Author(s):  
Costas G. Fountzoulas ◽  
Daniel M. Potrepka ◽  
Steven C. Tidrow
Keyword(s):  
Thin Films ◽  
Dielectric Constant ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Electrical Characterization ◽  
Field Variable ◽  
Laser Deposition ◽  
X Ray Diffraction ◽  
Ceramic Substrates ◽  
Nominal Thickness

AbstractFerroelectrics are multicomponent materials with a wealth of interesting and useful properties, such as piezoelectricity. The dielectric constant of the BSTO ferroelectrics can be changed by applying an electric field. Variable dielectric constant results in a change in phase velocity in the device allowing it to be tuned in real time for a particular application. The microstructure of the film influences the electronic properties which in turn influences the performance of the film. Ba0.6Sr0.4Ti1-y(A 3+, B5+)yO3 thin films, of nominal thickness of 0.65 μm, were synthesized initially at substrate temperatures of 400°C, and subsequently annealed to 750°C, on LaAlO3 (100) substrates, previously coated with LaSrCoO conductive buffer layer, using the pulsed laser deposition technique. The microstructural and physical characteristics of the postannealed thin films have been studied using x-ray diffraction, scanning electron microscopy, and nano indentation and are reported. Results of capacitance measurements are used to obtain dielectric constant and tunability in the paraelectric (T>Tc) regime.

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