Mechanics analysis of femtosecond laser-induced blisters produced in thermally grown oxide on Si(100)

2010 ◽  
Vol 25 (6) ◽  
pp. 1087-1095 ◽  
Author(s):  
Joel P. McDonald ◽  
M.D. Thouless ◽  
Steven M. Yalisove
Keyword(s):  
Silicon Dioxide ◽  
Thermal Effects ◽  
Pulsed Laser ◽  
Thermally Grown Oxide ◽  
Film Stress ◽  
Silicon Substrates ◽  
Residual Film ◽  
Mechanics Analysis ◽  
Pulsed Laser Irradiation

Blister features produced by laser-induced delamination of silicon dioxide from silicon substrates were analyzed with thin-film buckling mechanics. These analyses revealed the role of the interaction between the material and the femtosecond (fs)-pulsed laser on blister formation. In particular, it was deduced that the magnitude of the compressive residual film stress within the irradiated region appeared to exceed the intrinsic residual stress obtained from wafer curvature techniques. This apparent increase in the compressive stress after fs-pulsed laser irradiation may be caused by a modification of the oxide, which resulted in a local rarefaction of the film. The results demonstrated important features of the interaction between materials and fs-pulsed laser, including the presence of subtle modification thresholds and the limited role of thermal effects.

Ion Formation from Alkali Iodide Solids by Swift Dust Particle Impact

1982 ◽  
Vol 37 (12) ◽  
pp. 1335-1340 ◽  
Author(s):  
W. Knabe ◽  
F. R. Krueger
Keyword(s):  
Thermal Effects ◽  
Pulsed Laser ◽  
Dust Particles ◽  
Metal Foils ◽  
Ion Formation ◽  
Flight Mass Spectrometry ◽  
Coated Metal ◽  
The Impact ◽  
Pulsed Laser Irradiation

AbstractSwift Fe-dust particles (0.2-20 μmØ ; 1-50 km/s) are utilized to generate transiently ions from alkali iodide coated metal foils, analyzed by time-of-flight mass spectrometry. By means of a thermodynamic treatment it is shown that simple heating by the impact cannot be hold responsible for the ion formation. However, this process is very much related to the non-adiabatic ion formation by pulsed laser irradiation. The damage caused by the impact particle resulting in cratering and thermal effects, which are long-term processes, is not related to the instantaneous ion formation.

Ultrafast UV-Laser Induced Oxidation of Silicon

1983 ◽  
Vol 23 ◽  
Author(s):  
T.E. Orlowski ◽  
H. Richter
Keyword(s):  
Silicon Dioxide ◽  
Laser Excitation ◽  
Pulsed Laser ◽  
Silicon Substrates ◽  
Ir Absorption ◽  
Uv Laser ◽  
High Quality ◽  
Thermally Grown Oxides ◽  
Temperature Method ◽  
Cv Measurements

ABSTRACTA new low temperature method of forming high quality patterned silicon dioxide (SiO2) layers up to a thickness of 1 μm on silicon substrates is presented. UV pulsed laser excitation in an oxygen environment is utilized. IR absorption spectroscopy, CV and IV measurements are employed to characterize the oxide films and the Si-SiO2 interface. No shift but a significant broadening of the Si-O stretching mode compared with thermally grown oxides is found indicating that the laser grown oxide is stoichiometric but with a higher degree of disorder. From CV measurements we deduce a fixed oxide charge near the Si-SiO2 interface of 6×1010/cm2 for oxides that have been thermally annealed in O2 following the laser induced growth making this material a candidate for applications in semiconductor devices.

The role of heating and subsequent cooling for morphological modifications under pulsed laser irradiation

1993 ◽  
Vol 139 (1) ◽  
pp. 119-127
Author(s):  
A. Barborică ◽  
N. Chiţică ◽  
Maria Dinescu ◽  
A. Petriş ◽  
I. N. Mihăilescu ◽  
...  
Keyword(s):  
Laser Irradiation ◽  
Pulsed Laser ◽  
Pulsed Laser Irradiation

The Role of Chemical Composition for the Ductility and Microstructure of Thin NiAl Films

2001 ◽  
Vol 695 ◽  
Author(s):  
Patrick Wellner ◽  
Oliver Kraft ◽  
Eduard Arzt
Keyword(s):  
Fracture Toughness ◽  
Chemical Composition ◽  
Residual Stresses ◽  
Film Thickness ◽  
Stress Drop ◽  
Film Stress ◽  
Silicon Substrates ◽  
Simple Estimate ◽  
Grain Sizes

ABSTRACTIn this work, NiAl films deposited by magnetron co-sputtering onto silicon substrates with compositions between 45.0 and 51.5 at-% Al and a thickness of 1.2 μm were studied. The films exhibited grain sizes comparable to the film thickness. Furthermore, the films were found to have fiber textures with the strongest component being (110) for the very Ni-rich and (111) for the stoichiometric and Al-rich films. The residual stresses in the Ni-rich and stoichiometric films after annealing were found to be independent of composition, while the Al-rich films showed a significant decrease in film stress. This stress drop can be related to severe cracking in the Al-rich films, which has not been observed in the stoichiometric and Ni-rich films, indicating that the fracture toughness depends on composition. Based on a simple estimate, the fracture toughness of these Al-rich films was determined to be in the range of 1 to 2 MPa m-1/2, which is somewhat smaller than commonly reported bulk values for polycrystalline NiAl.

The Effects of Microstructure on the Brightness of Pulsed Laser Deposited Y2O3:Eu Thin Film Phosphors for Field Emission Displays

2000 ◽  
Vol 621 ◽  
Author(s):  
K. G. Cho ◽  
R. K. Singh ◽  
D. Kumar ◽  
P. H. Holloway ◽  
H-J. Gao ◽  
...  
Keyword(s):  
Thin Film ◽  
Field Emission ◽  
Pulsed Laser ◽  
Silicon Substrates ◽  
Lanthanum Aluminate ◽  
Field Emission Displays ◽  
Interface Scattering ◽  
Amorphous Quartz ◽  
Quartz Substrates

ABSTRACTIn order to investigate the effect of microstructure on the brightness of thin film phosphors for field emission displays, Y2O3:Eu thin film phosphors were prepared using pulsed laser deposition. To deconvolute the effects experimentally, the Y2O3:Eu films of controlled thickness and microstructure were prepared on various substrate materials such as amorphous quartz, (0001) sapphire, (100) lanthanum aluminate (LaAlO3), and (100) silicon wafers. Cathodoluminescent brightness and efficiency of the films were obtained in both transmission and reflection modes. The Y2O3:Eu films deposited on the quartz substrates showed the maximum brightness followed by the films on (0001) sapphire, (100) lanthanum aluminate (LaAlO3), and (100) silicon substrates. The role of interface scattering of the emitted light on the film brightness will be discussed together with changing surface roughness and film thickness.

Surface Structure and Morphology Modification of Silicon Layers Induced by Nanosecond Pulsed Laser Irradiation

1996 ◽  
Vol 441 ◽  
Author(s):  
A. Demchuk
Keyword(s):  
Surface Structure ◽  
Laser Irradiation ◽  
Pulsed Laser ◽  
Silicon Substrates ◽  
Surface Phenomena ◽  
Time Resolved ◽  
Nanosecond Pulsed Laser ◽  
Morphology Modification ◽  
Nonmonotonic Behavior ◽  
Pulsed Laser Irradiation

AbstractThe results of laser induced surface structure modifications utilizing time-resolved reflectivity measurements are presented for the pulsed laser irradiation (λ. = 1.06 μm and 0.53 μm) of thin polysilicon (poly-Si) layers of 0.1 μm, 0.45 μm and 1.0 μm in thickness on silicon substrates. It was shown that when the poly-Si layer of 0.1-0.45 thickness is totally molten, during a solidification, a large-grained structure having grain sizes exceeding the thickness of the molten Si layer is formed. At the same time, the time-resolved reflectivity changes its value nonmonotonically. This nonmonotonic behavior is due to the outcropping of growing grains onto the surface before the formation of a solid crystalline front as well as to the influence of the surface phenomena on the crystallization process.

Role of thermal stresses on pulsed laser irradiation of thin films under conditions of microbump formation and nonvaporization forward transfer

2013 ◽  
Vol 113 (2) ◽  
pp. 521-529 ◽  
Author(s):  
Yuri P. Meshcheryakov ◽  
Maxim V. Shugaev ◽  
Thomas Mattle ◽  
Thomas Lippert ◽  
Nadezhda M. Bulgakova
Keyword(s):  
Thin Films ◽  
Laser Irradiation ◽  
Thermal Stresses ◽  
Pulsed Laser ◽  
Forward Transfer ◽  
Pulsed Laser Irradiation
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