Electron beam Annealing of Shallow BF2 Implantations

1983 ◽  
Vol 23 ◽  
Author(s):  
C. Jaussaud ◽  
A.M. Cartier ◽  
J. Escaron
Keyword(s):  
Electron Beam ◽  
Sheet Resistance ◽  
Annealing Time ◽  
Junction Depth ◽  
Spreading Resistance ◽  
Annealing Temperatures ◽  
Minimum Value ◽  
Beam System ◽  
Multiple Scan ◽  
Resistance Value

ABSTRACTA multiple scan electron beam system has been used to anneal silicon implanted with BF2 (25 Kev, 1, 2 and 5 × 1015 ions × cm−2 ). The annealing temperatures range from 1000 to 1200° C and the annealing times from 3 to 18 seconds. The curves of sheet resistance as a function of annealing time show a minimum. The increase in sheet resistance at longer annealing times is due to boron outdiffusion. Junction depths have been measured by spreading resistance and are presented. For implanted doses below 2 × 1015 ions × cm−2 boron outdiffusion limits the sheet resistance value at about 100 R Ωand this minimum value corresponds to an increase in junction depths of about 500 Å. For implanted doses of 5 × 1015 ions ×cm−2, 60 Ω sheet resistance can be obtained, but with about 1000 Å increase in junction depth.

About the Electrical Activation of 1×1020 cm-3 Ion Implanted Al in 4H-SiC at Annealing Temperatures in the Range 1500 - 1950°C

2018 ◽  
Vol 924 ◽  
pp. 333-338 ◽  
Author(s):  
Roberta Nipoti ◽  
Alberto Carnera ◽  
Giovanni Alfieri ◽  
Lukas Kranz
Keyword(s):  
Activation Energy ◽  
Sheet Resistance ◽  
Annealing Time ◽  
Thermal Activation ◽  
Room Temperature ◽  
Annealing Temperature ◽  
Thermal Activation Energy ◽  
Electrical Activation ◽  
Temperature Range ◽  
Annealing Temperatures

The electrical activation of 1×1020cm-3implanted Al in 4H-SiC has been studied in the temperature range 1500 - 1950 °C by the analysis of the sheet resistance of the Al implanted layers, as measured at room temperature. The minimum annealing time for reaching stationary electrical at fixed annealing temperature has been found. The samples with stationary electrical activation have been used to estimate the thermal activation energy for the electrical activation of the implanted Al.

Millisecond Duration Annealing of Boron Implants in Silicon

1988 ◽  
Vol 100 ◽  
Author(s):  
D. A. Smith ◽  
R. A. McMahon ◽  
H. Ahmed ◽  
D. J. Godfrey
Keyword(s):  
Electron Beam ◽  
Low Temperature ◽  
Carrier Concentration ◽  
Sheet Resistance ◽  
Mass Spectroscopy ◽  
Concentration Profiles ◽  
Spreading Resistance ◽  
Isothermal Anneal ◽  
Wide Range ◽  
Secondary Ion

ABSTRACTA dual electron beam machine has been used to anneal boron implanted layers in order to study the diffusion and activation behaviour over a wide range of doses. The annealed implants have been characterized by spreading resistance profiling and secondary ion mass spectroscopy (SIMS). Carrier concentration profiles show that millisecond duration anneals can activate boron implants. A boron dose of 1E16 ions/cm2 was annealed to give a sheet resistance of 30 Ωsq with 40% of the implant activated. The SIMS technique showed there were no significant differences between the atomic profiles of the as-implanted samples and specimens subjected to a millisecond anneal or to a low temperature 850°C rapid isothermal anneal for 10s.

Annealing and Diffusion of Boron in Self-Implanted Silicon by Furnace and Electron Beam Heating

1984 ◽  
Vol 36 ◽  
Author(s):  
D. J. Godfrey ◽  
R. A. McMahon ◽  
D. G. Hasko ◽  
H. Ahmed ◽  
M. G. Dowsett
Keyword(s):  
Electron Beam ◽  
Sheet Resistance ◽  
Furnace Annealing ◽  
Tem Analysis ◽  
Cross Sectional ◽  
Wide Range ◽  
Beam Heating ◽  
Multiple Scan ◽  
And Diffusion ◽  
Electron Beam Heating

ABSTRACTThe annealing and diffusion behaviour of ion implanted boron over a wide range of doses in as-received and pre-amorphised silicon (180 keV 5 × 1015 cm−2 silicon implants) has been studied using conventional furnace annealing and multiple scan electron beam heating in the rapid isothermal annealing mode. The layers obtained have been characterised using spreading resistance profiling (SRP), SIMS and TEM.For furnace annealing the silicon implantation produces improved electrical activation for boron doses in excess of 1015 cm−2. SIMS and SRP data indicate that a higher level of peak activation has been achieved, whilst the overall amount of redistribution has been restricted. The reduction in diffusion achieved (∼0.2 μm) is greater than the maximum difference attributable to the effect of lower ion channelling for the silicon implanted samples. Cross-sectional TEM has been used to determine the resulting defect structure and provides insight into the details of the stable precipitated boron surface peak observed. A numerical diffusion model has been developed to allow interpretation of these experimental findings.Similar samples have been annealed using multiple scan electron beam heating (peak temperatures up to 1100°C for times up to 300 s). For silicon implanted with boron alone, where cooling commenced once the peak temperature of 1100°C had been reached, diffusion was restricted to 0.05 μm while the sheet resistance (32 Ω/square) was reduced by ∼25% compared to furnace anneals at 950°C. Identical annealing of silicon implanted samples produced improved activation with a sheet resistance of 26 Ω/square. Results from SIMS, SRP and TEM analysis of these experiments are reported.

Line-Shaped Electron Beam System and Soi Films Prepared by The System

1985 ◽  
Vol 45 ◽  
Author(s):  
Y. Hayafuji ◽  
A. Shibata ◽  
T. Yanada ◽  
A. Sawada ◽  
S. Usui ◽  
...  
Keyword(s):  
Electron Beam ◽  
Crystalline Silicon ◽  
Semiconductor Industry ◽  
High Energy ◽  
Silicon Films ◽  
High Energy Density ◽  
Present System ◽  
Single Crystalline ◽  
Beam System ◽  
Scanning Area

ABSTRACTThe line-shaped electron beam annealing system which generates an electron beam of a length of 4 cm and a width af less than 100 um with a high energy density exceeding well over 100 kW/cm2 was developed for the first time with a purpose of SOI processing as its primary application. An pccelaration voltage of up to 20 kV can be used in this system. Seeded single crystalline islands with areas several mm long and 30 to 100 um in width were obtained by a single scan of the electron beam. The electron beam is generated in a pulsed way in the system due to the power restriction of the power supplies. An area of 4×5 cm2 was processed by a single scan of an electron beam at a sample speed of 530 cm/sec and a beam duration of 9.5 msec. The scanning area for one scan is determined by the beam length and the duration of the beam and sample speed.The present system could give single crystalline silicon films without any grain boundaries. The electron mobility of the electron beam recrystallized films, obtained from FETs made as a vehicle to test the electrical properties of the films, was comparable to that of the bulk silicon. A very rapid migration of silicon atoms in solid polycrystalline silicon films, which is controllable by process parameters, was also found with a migration speed of the order of 1 m/sec in a capped structure. The present electron beam system is useful in studying basic mechanisms of crystal growth in thin films. The system can have a very high throughput, a desirable feature in semiconductor industry. The present system can also be used to study the rapid thermal treatment of materials other than semiconductors including rapidly solidified materials.

Interaction of Copper Film with Silicides

1990 ◽  
Vol 181 ◽  
Author(s):  
Yow-Tzong Shy ◽  
Shyam P. Murarka ◽  
Carlton L. Shepard ◽  
William A. Lanford
Keyword(s):  
Sheet Resistance ◽  
Diffusion Barrier ◽  
Room Temperature ◽  
Copper Film ◽  
Furnace Annealing ◽  
Rutherford Back Scattering ◽  
Annealing Temperatures ◽  
Back Scattering ◽  
The Stability ◽  
Stable Structures

ABSTRACTBilayers of Cu with TiSi2 and TaSi2 were tested by furnace annealing at temperatures from 200 to 500°C. Rutherford Back Scattering (RBS) technique was used to investigate the interaction between various films and determine the stability of Cu on silicide structures. The sheet resistance was also monitored. The results show that Cu on TiSi2 and TaSi2 structures are extremely stable structures at annealing temperatures in the range of room temperature to 500 °C. In such structures, therefore, there will not be a need of any diffusion barrier between Cu and the silicide films.

scholarly journals SPECIFIC OF INTERACTION OF THE MACROPARTICLES WITH THE PLASMA-BEAM SYSTEMS

2021 ◽  
pp. 69-73
Author(s):  
A.A. Bizyukov ◽  
A.D. Chibisov ◽  
E.V. Romashchenko ◽  
V.V. Masich
Keyword(s):  
Electron Beam ◽  
Detailed Analysis ◽  
Plasma Beam ◽  
Beam System ◽  
Rate Of Heating

The presented paper summarizes the results of the last works of the authors on modeling the processes of heating and evaporation of macroparticles in a plasma-beam system. The emphasis are made on the influence of the parameters of the plasma as well as the electron beam introduced into the plasma on these processes. A detailed analysis of the effects that accelerate or slow down the rate of heating and evaporation of macroparticles has been performed.

scholarly journals Expansion of technological capabilities of the electron beam welding installation

2021 ◽  
Vol 2077 (1) ◽  
pp. 012021
Author(s):  
I N Starkov ◽  
K A Rozhkov ◽  
T V Olshanskaya ◽  
D N Trushnikov ◽  
I A Zubko
Keyword(s):  
Electron Beam ◽  
Electron Beam Welding ◽  
Additive Technologies ◽  
Technological Capabilities ◽  
Beam Hardening ◽  
Expensive Equipment ◽  
New Methods ◽  
Beam System ◽  
Methods And Techniques ◽  
The Moment

Abstract The direction of electron beam technologies is promising and is rapidly developing. Quite recently, the electron beam was a tool for welding, and nowadays, electron-beam additive technologies and beam hardening technologies have become widespread. At the moment, there is no electron beam system that unites all these technologies. Expensive equipment has been developed to implement each technology. The article deals with expanding the technological capabilities of the 15E1000 electron-beam welding installation in order to implement new methods and techniques for processing metals with an electron beam.

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