Millisecond Duration Annealing of Boron Implants in Silicon

1988 ◽  
Vol 100 ◽  
Author(s):  
D. A. Smith ◽  
R. A. McMahon ◽  
H. Ahmed ◽  
D. J. Godfrey
Keyword(s):  
Electron Beam ◽  
Low Temperature ◽  
Carrier Concentration ◽  
Sheet Resistance ◽  
Mass Spectroscopy ◽  
Concentration Profiles ◽  
Spreading Resistance ◽  
Isothermal Anneal ◽  
Wide Range ◽  
Secondary Ion

ABSTRACTA dual electron beam machine has been used to anneal boron implanted layers in order to study the diffusion and activation behaviour over a wide range of doses. The annealed implants have been characterized by spreading resistance profiling and secondary ion mass spectroscopy (SIMS). Carrier concentration profiles show that millisecond duration anneals can activate boron implants. A boron dose of 1E16 ions/cm2 was annealed to give a sheet resistance of 30 Ωsq with 40% of the implant activated. The SIMS technique showed there were no significant differences between the atomic profiles of the as-implanted samples and specimens subjected to a millisecond anneal or to a low temperature 850°C rapid isothermal anneal for 10s.

Analysis of low-energy boron implants in silicon

1985 ◽  
Vol 63 (6) ◽  
pp. 890-893 ◽  
Author(s):  
M. Simard-Normandin ◽  
C. Slaby
Keyword(s):  
Sheet Resistance ◽  
Mass Spectroscopy ◽  
Measurement Techniques ◽  
Low Energy ◽  
Resistance Measurement ◽  
Concentration Profiles ◽  
Secondary Ion Mass Spectroscopy ◽  
Sheet Resistance Measurement ◽  
Secondary Ion

Low-energy boron implants in silicon are analyzed using secondary-ion mass spectroscopy and standard junction and sheet-resistance measurement techniques. Implantation of 11B+ is compared with that of [Formula: see text]. The concentration profiles are compared with Linhard–Scharf–Schiott theory and improved range parameters are obtained.

Electron beam Annealing of Shallow BF2 Implantations

1983 ◽  
Vol 23 ◽  
Author(s):  
C. Jaussaud ◽  
A.M. Cartier ◽  
J. Escaron
Keyword(s):  
Electron Beam ◽  
Sheet Resistance ◽  
Annealing Time ◽  
Junction Depth ◽  
Spreading Resistance ◽  
Annealing Temperatures ◽  
Minimum Value ◽  
Beam System ◽  
Multiple Scan ◽  
Resistance Value

ABSTRACTA multiple scan electron beam system has been used to anneal silicon implanted with BF2 (25 Kev, 1, 2 and 5 × 1015 ions × cm−2 ). The annealing temperatures range from 1000 to 1200° C and the annealing times from 3 to 18 seconds. The curves of sheet resistance as a function of annealing time show a minimum. The increase in sheet resistance at longer annealing times is due to boron outdiffusion. Junction depths have been measured by spreading resistance and are presented. For implanted doses below 2 × 1015 ions × cm−2 boron outdiffusion limits the sheet resistance value at about 100 R Ωand this minimum value corresponds to an increase in junction depths of about 500 Å. For implanted doses of 5 × 1015 ions ×cm−2, 60 Ω sheet resistance can be obtained, but with about 1000 Å increase in junction depth.

Investigation of Roughness at InP/InAs Interfaces

1992 ◽  
Vol 280 ◽  
Author(s):  
M.J.S.P. Brasil ◽  
R. E. Nahory ◽  
M. C. Tamargo ◽  
S. Schwarz
Keyword(s):  
Low Temperature ◽  
Quantum Wells ◽  
Mass Spectroscopy ◽  
Growth Temperature ◽  
Interface Roughness ◽  
Chemical Beam Epitaxy ◽  
Photoluminescence Spectra ◽  
Multiple Line ◽  
Secondary Ion ◽  
Low Temperature Photoluminescence

ABSTRACTWe have investigated the interface roughness of single thin InP/InAs quantum wells grown by Chemical Beam Epitaxy. We report results of low temperature photoluminescence and secondary ion mass spectroscopy. The interface roughness is characterized by multiple-line photoluminescence spectra and is very sensitive to parameters such as the growth temperature. Details of the interface roughness are discussed based on the shifts of the excitonic energies observed by photoluminescence.

Comparison of Oxygen and Hydrogen Gettering at High-Temperature Post-Implantation Annealing of Hydrogen and Helium Implanted Czochralski Silicon

1998 ◽  
Vol 510 ◽  
Author(s):  
R. Job ◽  
W. R. Fahrner ◽  
A. I. Ivanov ◽  
L. Palmetshofer ◽  
A. G Ulyashin
Keyword(s):  
High Temperature ◽  
Mass Spectroscopy ◽  
Heat Treatments ◽  
Secondary Ion Mass Spectroscopy ◽  
Spreading Resistance ◽  
Czochralski Silicon ◽  
Implantation Damage ◽  
P Type ◽  
Secondary Ion ◽  
Post Implantation

AbstractP-type Czochralski (Cz) Si was implanted with H (180 keV, 2.7.1016 cm−2) or He (300 keV, 1.1016 cm−2) ions. The gettering of O and H atoms by the buried implantation damage layers during annealing up to 4 hours (1000°C in H2 or N2 ambient) was studied by secondary ion mass spectroscopy (SIMS) and spreading resistance probe (SRP) measurements. Buried defect layers act as good getter centers for O and H atoms at appropriate heat treatments. The enhanced gettering of O atoms in H implanted Cz Si (as compared to the gettering of O in He implanted samples) as well as the enhanced gettering of O during annealing in H2 flow (as compared to N2 ambient) can be explained by a hydrogen enhanced O diffusion towards the defect layers. According to a strong accumulation of O at the buried damage layers and near the surface some anomalies of the SRP profiles can be observed after post-implantation annealing.

Multiple Proton Implantations into Silicon: A Combined EBIC and SRP Study

2013 ◽  
Vol 205-206 ◽  
pp. 311-316 ◽  
Author(s):  
Stefan Kirnstötter ◽  
Martin Faccinelli ◽  
Moriz Jelinek ◽  
Werner Schustereder ◽  
Johannes G. Laven ◽  
...  
Keyword(s):  
Electron Beam ◽  
Carrier Concentration ◽  
Silicon Wafer ◽  
Induced Current ◽  
Spreading Resistance ◽  
Doped Silicon ◽  
Radiation Induced ◽  
Electron Beam Induced Current ◽  
Induced Defects

Protons with energies of 1 MeV and 2.5 MeV were implanted into a p-doped silicon wafer and then the wafer was annealed at 350 °C for one hour. This resulted in two n-doped layers in the otherwise p-doped sample. The carrier concentration was measured using spreading resistance profiling while the positions of the four pn-junctions were measured using electron beam induced current measurements. The carrier concentration is not limited by the available hydrogen but by the concentration of suitable radiation induced defects.

Annealing and Diffusion of Boron in Self-Implanted Silicon by Furnace and Electron Beam Heating

1984 ◽  
Vol 36 ◽  
Author(s):  
D. J. Godfrey ◽  
R. A. McMahon ◽  
D. G. Hasko ◽  
H. Ahmed ◽  
M. G. Dowsett
Keyword(s):  
Electron Beam ◽  
Sheet Resistance ◽  
Furnace Annealing ◽  
Tem Analysis ◽  
Cross Sectional ◽  
Wide Range ◽  
Beam Heating ◽  
Multiple Scan ◽  
And Diffusion ◽  
Electron Beam Heating

ABSTRACTThe annealing and diffusion behaviour of ion implanted boron over a wide range of doses in as-received and pre-amorphised silicon (180 keV 5 × 1015 cm−2 silicon implants) has been studied using conventional furnace annealing and multiple scan electron beam heating in the rapid isothermal annealing mode. The layers obtained have been characterised using spreading resistance profiling (SRP), SIMS and TEM.For furnace annealing the silicon implantation produces improved electrical activation for boron doses in excess of 1015 cm−2. SIMS and SRP data indicate that a higher level of peak activation has been achieved, whilst the overall amount of redistribution has been restricted. The reduction in diffusion achieved (∼0.2 μm) is greater than the maximum difference attributable to the effect of lower ion channelling for the silicon implanted samples. Cross-sectional TEM has been used to determine the resulting defect structure and provides insight into the details of the stable precipitated boron surface peak observed. A numerical diffusion model has been developed to allow interpretation of these experimental findings.Similar samples have been annealed using multiple scan electron beam heating (peak temperatures up to 1100°C for times up to 300 s). For silicon implanted with boron alone, where cooling commenced once the peak temperature of 1100°C had been reached, diffusion was restricted to 0.05 μm while the sheet resistance (32 Ω/square) was reduced by ∼25% compared to furnace anneals at 950°C. Identical annealing of silicon implanted samples produced improved activation with a sheet resistance of 26 Ω/square. Results from SIMS, SRP and TEM analysis of these experiments are reported.

Modeling Boron and Indium Electrical Activities in Silicon in the Presence of Nitrogen

2001 ◽  
Vol 669 ◽  
Author(s):  
Vladimir Zubkov ◽  
Sheldon Aronowitz ◽  
Helmut Puchner ◽  
Juan P. Senosiain
Keyword(s):  
Ab Initio ◽  
Band Gap ◽  
Long Range ◽  
Mass Spectroscopy ◽  
Formation Energy ◽  
Spreading Resistance ◽  
Acceptor Activity ◽  
Long Range Interactions ◽  
Electrical Activities ◽  
Secondary Ion

ABSTRACTThe ab initio pseudopotential code (VASP) was employed to explore indium and boron electrical activities in silicon in the presence of nitrogen. Electrical activities for the combinations B+N, In+N, and In+B+N were explored. Formation energy of a negatively charged supercell, (E−)f, and a band gap, Eg, from calculations with one k point were chosen as indicators of acceptor activity. For separate dopants the calculated (E−)f and Eg values indicate that substitutional B and In are effective acceptors and N is an extremely weak donor. When nitrogen is adjacent to, or separated 3 - 5 bonds from B or In, it suppresses acceptor activity. Binding is greater for In+N than for B+N in agreement with secondary ion mass spectroscopy (SIMS) data that demonstrates a greater retention of N by In. This should lead to a greater drop in activity for In+N combination versus B+N one, in agreement with spreading resistance profiling (SRP) experiments. Loss of activity in In+B+N combination might be due to long range interactions between dopants.

Sign in / Sign up

Export Citation Format

Share Document