Performance of a combined focused ion and electron beam system

1990 ◽  
Vol 8 (6) ◽  
pp. 1848 ◽  
Author(s):  
H. Sawaragi
Keyword(s):  
Electron Beam ◽  
Beam System

Line-Shaped Electron Beam System and Soi Films Prepared by The System

1985 ◽  
Vol 45 ◽  
Author(s):  
Y. Hayafuji ◽  
A. Shibata ◽  
T. Yanada ◽  
A. Sawada ◽  
S. Usui ◽  
...  
Keyword(s):  
Electron Beam ◽  
Crystalline Silicon ◽  
Semiconductor Industry ◽  
High Energy ◽  
Silicon Films ◽  
High Energy Density ◽  
Present System ◽  
Single Crystalline ◽  
Beam System ◽  
Scanning Area

ABSTRACTThe line-shaped electron beam annealing system which generates an electron beam of a length of 4 cm and a width af less than 100 um with a high energy density exceeding well over 100 kW/cm2 was developed for the first time with a purpose of SOI processing as its primary application. An pccelaration voltage of up to 20 kV can be used in this system. Seeded single crystalline islands with areas several mm long and 30 to 100 um in width were obtained by a single scan of the electron beam. The electron beam is generated in a pulsed way in the system due to the power restriction of the power supplies. An area of 4×5 cm2 was processed by a single scan of an electron beam at a sample speed of 530 cm/sec and a beam duration of 9.5 msec. The scanning area for one scan is determined by the beam length and the duration of the beam and sample speed.The present system could give single crystalline silicon films without any grain boundaries. The electron mobility of the electron beam recrystallized films, obtained from FETs made as a vehicle to test the electrical properties of the films, was comparable to that of the bulk silicon. A very rapid migration of silicon atoms in solid polycrystalline silicon films, which is controllable by process parameters, was also found with a migration speed of the order of 1 m/sec in a capped structure. The present electron beam system is useful in studying basic mechanisms of crystal growth in thin films. The system can have a very high throughput, a desirable feature in semiconductor industry. The present system can also be used to study the rapid thermal treatment of materials other than semiconductors including rapidly solidified materials.

scholarly journals SPECIFIC OF INTERACTION OF THE MACROPARTICLES WITH THE PLASMA-BEAM SYSTEMS

2021 ◽  
pp. 69-73
Author(s):  
A.A. Bizyukov ◽  
A.D. Chibisov ◽  
E.V. Romashchenko ◽  
V.V. Masich
Keyword(s):  
Electron Beam ◽  
Detailed Analysis ◽  
Plasma Beam ◽  
Beam System ◽  
Rate Of Heating

The presented paper summarizes the results of the last works of the authors on modeling the processes of heating and evaporation of macroparticles in a plasma-beam system. The emphasis are made on the influence of the parameters of the plasma as well as the electron beam introduced into the plasma on these processes. A detailed analysis of the effects that accelerate or slow down the rate of heating and evaporation of macroparticles has been performed.

scholarly journals Expansion of technological capabilities of the electron beam welding installation

2021 ◽  
Vol 2077 (1) ◽  
pp. 012021
Author(s):  
I N Starkov ◽  
K A Rozhkov ◽  
T V Olshanskaya ◽  
D N Trushnikov ◽  
I A Zubko
Keyword(s):  
Electron Beam ◽  
Electron Beam Welding ◽  
Additive Technologies ◽  
Technological Capabilities ◽  
Beam Hardening ◽  
Expensive Equipment ◽  
New Methods ◽  
Beam System ◽  
Methods And Techniques ◽  
The Moment

Abstract The direction of electron beam technologies is promising and is rapidly developing. Quite recently, the electron beam was a tool for welding, and nowadays, electron-beam additive technologies and beam hardening technologies have become widespread. At the moment, there is no electron beam system that unites all these technologies. Expensive equipment has been developed to implement each technology. The article deals with expanding the technological capabilities of the 15E1000 electron-beam welding installation in order to implement new methods and techniques for processing metals with an electron beam.

Electron beam Annealing of Shallow BF2 Implantations

1983 ◽  
Vol 23 ◽  
Author(s):  
C. Jaussaud ◽  
A.M. Cartier ◽  
J. Escaron
Keyword(s):  
Electron Beam ◽  
Sheet Resistance ◽  
Annealing Time ◽  
Junction Depth ◽  
Spreading Resistance ◽  
Annealing Temperatures ◽  
Minimum Value ◽  
Beam System ◽  
Multiple Scan ◽  
Resistance Value

ABSTRACTA multiple scan electron beam system has been used to anneal silicon implanted with BF2 (25 Kev, 1, 2 and 5 × 1015 ions × cm−2 ). The annealing temperatures range from 1000 to 1200° C and the annealing times from 3 to 18 seconds. The curves of sheet resistance as a function of annealing time show a minimum. The increase in sheet resistance at longer annealing times is due to boron outdiffusion. Junction depths have been measured by spreading resistance and are presented. For implanted doses below 2 × 1015 ions × cm−2 boron outdiffusion limits the sheet resistance value at about 100 R Ωand this minimum value corresponds to an increase in junction depths of about 500 Å. For implanted doses of 5 × 1015 ions ×cm−2, 60 Ω sheet resistance can be obtained, but with about 1000 Å increase in junction depth.

High Speed Direct Write Electron Beam System

1982 ◽  
Author(s):  
Frank Ura ◽  
Paul Rissman
Keyword(s):  
Electron Beam ◽  
High Speed ◽  
Direct Write ◽  
Beam System
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