Modelling and Characterization of Submicron P-Channel MOSFET's Locally Degraded by Hot Carrier Injection

1991 ◽  
Vol 225 ◽  
Author(s):  
A. Hassein-Bey ◽  
S. Cristoloveanu
Keyword(s):  
Practical Method ◽  
Parameter Extraction ◽  
Carrier Injection ◽  
Hot Carrier ◽  
Hot Carrier Injection ◽  
Strong Inversion ◽  
Before And After ◽  
Basic Characteristics ◽  
Channel Region

ABSTRACTThe influence of the localized defective channel region formed by hot carrier injection on the basic characteristics of P-channel transistors is systematically investigated and modeled. A practical method of parameter extraction in stressed P-MOSFET's is proposed. It is based on the comparison of Ids(Vg) characteristics before and after stress in weak and strong inversion.

Analysis of Hot Carrier Injection According to Gate Length

2019 ◽  
Vol 19 (10) ◽  
pp. 6746-6749 ◽  
Author(s):  
Taejin Jang ◽  
Myung-Hyun Baek ◽  
Min-Woo Kwon ◽  
Sungmin Hwang ◽  
Jeesoo Chang ◽  
...  
Keyword(s):  
Gate Length ◽  
Carrier Injection ◽  
Hot Carrier ◽  
Hot Carrier Injection
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