Characterization of Si/SiO2interface degradation due to hot-carrier injection

1985 ◽  
Author(s):  
A.G. Sabnis ◽  
J.T. Nelson
1991 ◽  
Vol 225 ◽  
Author(s):  
A. Hassein-Bey ◽  
S. Cristoloveanu

ABSTRACTThe influence of the localized defective channel region formed by hot carrier injection on the basic characteristics of P-channel transistors is systematically investigated and modeled. A practical method of parameter extraction in stressed P-MOSFET's is proposed. It is based on the comparison of Ids(Vg) characteristics before and after stress in weak and strong inversion.


2019 ◽  
Vol 19 (10) ◽  
pp. 6746-6749 ◽  
Author(s):  
Taejin Jang ◽  
Myung-Hyun Baek ◽  
Min-Woo Kwon ◽  
Sungmin Hwang ◽  
Jeesoo Chang ◽  
...  

Sign in / Sign up

Export Citation Format

Share Document