Industrial Perspective on Reliability of VLSI Devices

1991 ◽  
Vol 225 ◽  
Author(s):  
P. B. Ghate
Keyword(s):  
Integrated Circuits ◽  
Failure Rate ◽  
Large Scale ◽  
Semiconductor Industry ◽  
Test Methods ◽  
Lessons Learned ◽  
Limiting Factors ◽  
Current Status ◽  
Test Procedures ◽  
Process Reliability

ABSTRACTThe reliability of silicon integrated circuits (ICs) has improved significantly in the last decade. The complexity of ICs continues to increase. The semiconductor industry is actively working to a) improve the reliability of very large scale (VLSI) ICs, and b) reduce the failure rates to a value closer to 0.1 FIT by the year 2000. This paper summarizes the current status of quality and reliability of ICs. Some of the reliability limiting factors are described. Inadequacy of conventional accelerated test methods to verify the reliability of VLSI devices is highlighted. A challenging VLSI reliability goal with a failure rate approaching 0.1 FIT requires a) an understanding of the root causes of failure mechanisms, b) a translation of the lessons learned into a set of design rules for the circuit designers, c) appropriate materials and process specifications consistent with manufacturing capabilities, and d) in-process reliability test structures and test procedures. A VLSI failure rate goal of 0.1 FIT presents an exciting challenge for the materials scientists.

Atomic Layer Deposition of Dielectrics on Ge and III–V Materials for Ultrahigh Performance Transistors

MRS Bulletin ◽  
2009 ◽  
Vol 34 (7) ◽  
pp. 493-503 ◽  
Author(s):  
Robert M. Wallace ◽  
Paul C. McIntyre ◽  
Jiyoung Kim ◽  
Yoshio Nishi
Keyword(s):  
Atomic Layer Deposition ◽  
Integrated Circuits ◽  
Large Scale ◽  
Gate Dielectrics ◽  
Atomic Layer ◽  
Current Status ◽  
Scale Production ◽  
Transistor Channel ◽  
Layer Deposition ◽  
Field Effect Devices

AbstractThe prospect of utilizing alternative transistor channel materials for ultrahigh performance transistors will require suitable gate dielectrics for surface-channel field-effect devices. With the utilization of deposited gate dielectrics in large-scale production for Si-based integrated circuits by atomic layer deposition, extending this technology to channel materials that exhibit high bulk mobility behavior is of interest. A review of the current status for atomic layer deposited high-κ dielectrics on Ge and III–V channel materials is presented.

scholarly journals World-wide trends in powertrain system development in light of emissions legislation, fuels, lubricants, and test methods

2021 ◽  
Author(s):  
Piotr Bielaczyc ◽  
Joseph WOODBURN ◽  
Ameya JOSHI
Keyword(s):  
System Development ◽  
Test Methods ◽  
Current Status ◽  
Engine Fuel ◽  
Combustion Engines ◽  
Test Procedures ◽  
Powertrain System ◽  
University Of Technology ◽  
Wide Range ◽  
Aftertreatment Systems

Both the light- and heavy-duty sectors of the automotive industry are currently under unprecedented pressure from a wide range of factors, particularly in terms of environmental performance and fuel consumption. Test procedures have undergone massive changes and continue to evolve, meaning that standards are becoming much harder to meet, especially in Europe but also in other continents. Such developments force changes in testing methodology, the development of powertrains themselves and their aftertreatment systems and strategies and calibrations. A range of strategies are available to overcome these difficulties, as explored during the VIII Congress on Combustion Engines organised by the Polish Scientific Society of Combustion Engines (PTNSS) and hosted at Krakow University of Technology, Poland in June 2019. This paper reports and summarises the topics of the VIII PTNSS Congress and attempts a synthesis on the current status of the field of LD ad HD IC engines, hybrid powertrains and electric vehicles, engine fuel and oil and what the coming years may hold for the automotive and fuel industries and other allied fields.

Interlaboratory Study for Small Punch Testing Preliminary Results

2018 ◽  
Author(s):  
Milan Brumovsky ◽  
Radim Kopriva
Keyword(s):  
Nuclear Power ◽  
Structural Materials ◽  
Lessons Learned ◽  
Interlaboratory Study ◽  
Current Status ◽  
Small Punch Test ◽  
Test Procedures ◽  
Test Technique ◽  
Small Punch ◽  
Punch Test

Small punch test specimens are widely used for a long time as they are simple to produce and requires only a small volume of material. This fact is advantageous especially for high activity materials but also for assessment of operational damage in components materials when component integrity and strength may not be affected. In the same time, no test standard exists and several different specimen types and test procedures have been developed in different place. Thus, to unify this activity, considerable attention has been paid since 2012 to the standardization of small punch test technique within the American Society of Testing and Materials (ASTM). In 2016 a large InterLaboratory Study has been launched within the ASTM subcommittee E10.02 - Behavior and Use of Nuclear Structural Materials, involving 12 laboratories and 6 evaluated structural materials from the nuclear and non-nuclear power plant components. Paper describes the current status of ASTM standardization, results of the InterLaboratory Study, first analysis of the results with respect to some important test parameters, lessons learned and open questions remaining to be solved for the successful completion of the standardization process.

Current Status of Large-Scale InP Photonic Integrated Circuits

2011 ◽  
Vol 17 (6) ◽  
pp. 1470-1489 ◽  
Author(s):  
F. A. Kish ◽  
D. Welch ◽  
R. Nagarajan ◽  
J. L. Pleumeekers ◽  
V. Lal ◽  
...  
Keyword(s):  
Integrated Circuits ◽  
Large Scale ◽  
Photonic Integrated Circuits ◽  
Current Status

scholarly journals METHOD OF IONIC MIXING FOR SILICIDE LAYER FORMATION

2020 ◽  
pp. 868-874
Author(s):  
Гасан Абакарович Мустафаев ◽  
Арслан Гасанович Мустафаев ◽  
Валерий Александрович Панченко ◽  
Наталья Васильевна Черкесова
Keyword(s):  
Integrated Circuits ◽  
Large Scale ◽  
Ohmic Contacts ◽  
Limiting Factors ◽  
Silicide Formation ◽  
Layer Formation ◽  
Surface Layers ◽  
Silicide Layer ◽  
Parasitic Resistance ◽  
Metal Silicides

Ионная имплантация ионами отдачи или ионное перемешивание, основанное на внедрении требуемой примеси из поверхностных слоев при передаче им кинетической энергии первичного пучка, имеют большие перспективы для получения структур и соединений с заданными свойствами. В процессе масштабирования сверхбольших интегральных схем паразитное сопротивление межсодинений и неомический характер контактов являются ограничивающими факторами. Перспективными материалами для использования в системах металлизации являются силициды тугоплавких металлов. В работе проведено исследование по внедрению ионов фосфора в систему молибден-кремний. Полученные результаты демонстрируют возможность формирования силицида молибдена при пониженной температуре, применением имплантации ионов, вызывающих ионное перемешивание. Разработанная технология позволяет достичь однородной границы раздела силицида с кремнием, и необходимые электрофизические характеристики метализации и омических контактов. Из-за заглубления границы раздела в объем полупроводника снижается влияние состояния поверхности кремния на параметры омических контактов, в результате обеспечивается их необходимая стабильность и воспроизводимость. Ion implantation with recoil ions or ion mixing based on the introduction of the required impurity from the surface layers during the transfer of the kinetic energy of the primary beam to them have great prospects for obtaining structures and compounds with desired properties. In the process of ranging of very large scale integrated circuits, the parasitic resistance of interconnections and the nonohmic nature of contacts are the limiting factors. Refractory metal silicides are promising materials for use in metallization systems. In this work a study was carried out on the introduction of phosphorus ions into molybdenum-silicon systems. The results obtained demonstrate the possibility of the molybdenum silicide formation at a low temperature using implantation of ions that cause ionic mixing. The developed technology makes it possible to achieve a homogeneous interface between the silicide and silicon with the necessary electrophysical characteristics of metalization and ohmic contacts. Due to the deepening of the interface into the bulk of the semiconductor, the effect of the silicon surface state on parameters of ohmic contacts decreases. As a result their necessary stability and reproducibility are ensured.

Global Dispersant Approvals in Asia Pacific – Current Status and On Going Challenges

2017 ◽  
Vol 2017 (1) ◽  
pp. 657-677
Author(s):  
Thomas Coolbaugh ◽  
Geeva Varghese ◽  
Lau Siau Li
Keyword(s):  
Large Scale ◽  
Oil And Gas ◽  
Oil And Gas Industry ◽  
Lessons Learned ◽  
Asia Pacific ◽  
Current Status ◽  
Gas Industry ◽  
Dispersed Oil ◽  
Regulatory Perspective ◽  
Oil Spill Response

ABSTRACT Following the Macondo Incident, the international oil and gas industry spent significant time and effort analyzing lessons learned and implementing key projects to ensure that critical response and preparedness issues that were identified are addressed to improve response capabilities. The Global Dispersant Stockpile (GDS) was established as part of a post-Macondo Joint Industry Project through Oil Spill Response Limited (OSRL), recognizing that delivery of sufficient quantities of dispersant is a key element for a successful dispersant operation, especially during the initial phases of a large scale response to an event such as a subsea well blowout. Taking into account the global approval status and proven effectiveness on a range of crude oils, three key oil dispersants, Finasol® OSR 52 (Total), Corexit® EC9500A (Nalco) and Slickgone® NS (Dasic) were selected for the Global Dispersant Stockpile. A total of 5,000 m3 of these dispersants are now stored and ready to be deployed from five strategically positioned global locations. For example, sizable volumes of two of these products (total volume = 700 m3) are located at OSRL’s response base in Singapore, which can be quickly mobilized to support a response in the Asia Pacific region. An ongoing effort associated with the management of the GDS is to enable the pre-approval of at least one of the three products for countries in the region where spill response may be required. At present, this is not the case in the region for a variety of reasons, e.g., toxicity concerns and biodegradation processes of dispersed oil. A particularly cautious approach by regulatory authorities following the Macondo incident, coupled with a number of other specific regional concerns, has exacerbated the issue of obtaining and maintaining dispersant approvals in the region. The aim of this paper is to identify and discuss the existing regulatory framework governing the dispersant product approval process and dispersant use authorization for countries in Asia Pacific. The paper will detail the present status of regulations related to dispersant use for a number of countries in the region, the potential challenges associated with achieving permissions in countries with no regulations and a discussion of strategies to address identified obstacles. Additionally the activities that are being undertaken to expand regulatory approvals will also be addressed. It is anticipated that a greater understanding of the reasoning behind the GDS will facilitate a positive regulatory perspective and the potential for dispersant pre-approval in the region.

The first commercial large-scale InP photonic integrated circuits: current status and performance

2007 ◽  
Author(s):  
Sheila Hurtt ◽  
Andrew G. Dentai ◽  
Jacco L. Pleumeekers ◽  
Atul Mathur ◽  
Ranjani Muthiah ◽  
...  
Keyword(s):  
Integrated Circuits ◽  
Large Scale ◽  
Photonic Integrated Circuits ◽  
Current Status ◽  
And Performance

Some applications of electron beam microanalysis techniques in VLSI process evaluation

1983 ◽  
Vol 41 ◽  
pp. 160-161
Author(s):  
Simon Thomas
Keyword(s):  
Integrated Circuits ◽  
Process Evaluation ◽  
Large Scale ◽  
Technology Development ◽  
Analytical Techniques ◽  
Successful Implementation ◽  
Analysis Of Failures ◽  
Characterization Of Materials ◽  
Circuits Vlsi

Trends in the technology development of very large scale integrated circuits (VLSI) have been in the direction of higher density of components with smaller dimensions. The scaling down of device dimensions has been not only laterally but also in depth. Such efforts in miniaturization bring with them new developments in materials and processing. Successful implementation of these efforts is, to a large extent, dependent on the proper understanding of the material properties, process technologies and reliability issues, through adequate analytical studies. The analytical instrumentation technology has, fortunately, kept pace with the basic requirements of devices with lateral dimensions in the micron/ submicron range and depths of the order of nonometers. Often, newer analytical techniques have emerged or the more conventional techniques have been adapted to meet the more stringent requirements. As such, a variety of analytical techniques are available today to aid an analyst in the efforts of VLSI process evaluation. Generally such analytical efforts are divided into the characterization of materials, evaluation of processing steps and the analysis of failures.

Electron microscopy study of reactively sputter-deposited Ti/N films on silicon

1992 ◽  
Vol 50 (2) ◽  
pp. 1362-1363
Author(s):  
V. C. Kannan ◽  
A. K. Singh ◽  
R. B. Irwin ◽  
S. Chittipeddi ◽  
F. D. Nkansah ◽  
...  
Keyword(s):  
Integrated Circuits ◽  
Large Scale ◽  
Hexagonal Phase ◽  
Microscopy Study ◽  
Electron Microscopy Study ◽  
Process Conditions ◽  
Tin Films ◽  
Wide Range ◽  
Fcc Phase ◽  
Circuits Vlsi

Titanium nitride (TiN) films have historically been used as diffusion barrier between silicon and aluminum, as an adhesion layer for tungsten deposition and as an interconnect material etc. Recently, the role of TiN films as contact barriers in very large scale silicon integrated circuits (VLSI) has been extensively studied. TiN films have resistivities on the order of 20μ Ω-cm which is much lower than that of titanium (nearly 66μ Ω-cm). Deposited TiN films show resistivities which vary from 20 to 100μ Ω-cm depending upon the type of deposition and process conditions. TiNx is known to have a NaCl type crystal structure for a wide range of compositions. Change in color from metallic luster to gold reflects the stabilization of the TiNx (FCC) phase over the close packed Ti(N) hexagonal phase. It was found that TiN (1:1) ideal composition with the FCC (NaCl-type) structure gives the best electrical property.

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