Comparative Study of the Optical and Vibrational Properties of a-SiNx:H Films Prepared from SiH4-N2 and SiH4-NH3 Gas Mixtures by rf Plasma

1992 ◽  
Vol 258 ◽  
Author(s):  
J. Campmany ◽  
E. Bertran ◽  
J.L. Andújar ◽  
A. Canillas ◽  
J. M. López-Villegas ◽  
...  
Keyword(s):  
Refractive Index ◽  
Silicon Nitride ◽  
Growth Models ◽  
Nitrogen Concentration ◽  
Gas Mixtures ◽  
Rf Plasma ◽  
Vibrational Properties ◽  
Amorphous Silicon Nitride ◽  
Silicon Nitride Films ◽  
Wide Range

ABSTRACTThe properties of amorphous silicon nitride films (a-SiNx:H) prepared by PECVD from SiH4-NH3 and SiH4-N2 gas mixtures have been determined by spectroscopie ellipsometry and FTIR spectroscopy as a function of the nitrogen concentration measured by XPS. The films are transparent for silane ratios [SiH4]/([SiH4] + [NH3]) < 20% and [SiH4]/([SiH4] + [N,]) < 1.5%. The refractive index shows a wide range of progressive variation from 3.2 for high silane concentrations to 1.8 for low silane concentrations. The hydrogen content of the low-absorbing films has much lower values for those obtained by SiH4 + N2 plasma than for those obtained by SiH4 + NH3 plasma. The results are discussed in terms of growth models of PECVD a-SiNx:H films from SiH4-NH3 and SiH4-N2 mixtures.

PACVD Fluorinated Silicon Nitride Films Deposited From SiF4/NH3 GAS MIXTURES

1991 ◽  
Vol 223 ◽  
Author(s):  
A. Castro ◽  
M. Gasset ◽  
C. Gomez-Aleixandre ◽  
O. Sanchez ◽  
J. M. Albella
Keyword(s):  
Silicon Nitride ◽  
Low Frequency ◽  
Fluorine Content ◽  
Emission Spectra ◽  
Deposition Process ◽  
Gas Mixtures ◽  
Silicon Nitride Films ◽  
Deposition Parameters ◽  
Wide Range ◽  
Analytical Resolution

ABSTRACTFluorinated silicon nitride films deposited from SiF4/NH3 gas mixtures by PACVD at two different frequencies have been investigated. At 13.56 MHz, low deposition rate was detected and no appreciable changes were observed when the deposition parameters varied in a wide range. On the contrary, higher deposition rates were achieved when a 35 KHz frequency was applied. These low frequency silicon nitride films showed an increase in the fluorine content In their structure when the SiF4 flow ratio in the gas mixture was increased, as detected by analytical resolution of the IR spectra. In addition, analysis of the plasma emission spectra has been performed in order to explain the effect of the plasma frequency in the deposition process.

scholarly journals Effect of Thermal Annealing on the Photoluminescence of Dense Si Nanodots Embedded in Amorphous Silicon Nitride Films

Micromachines ◽  
2021 ◽  
Vol 12 (4) ◽  
pp. 354
Author(s):  
Qianqian Liu ◽  
Xiaoxuan Chen ◽  
Hongliang Li ◽  
Yanqing Guo ◽  
Jie Song ◽  
...  
Keyword(s):  
Silicon Nitride ◽  
Amorphous Silicon ◽  
Thermal Annealing ◽  
Chemical Vapor ◽  
Peak Position ◽  
Excitation Wavelength ◽  
Very High Frequency ◽  
Amorphous Silicon Nitride ◽  
Silicon Nitride Films ◽  
High Frequency Plasma

Luminescent amorphous silicon nitride-containing dense Si nanodots were prepared by using very-high-frequency plasma-enhanced chemical vapor deposition at 250 °C. The influence of thermal annealing on photoluminescence (PL) was studied. Compared with the pristine film, thermal annealing at 1000 °C gave rise to a significant enhancement by more than twofold in terms of PL intensity. The PL featured a nanosecond recombination dynamic. The PL peak position was independent of the excitation wavelength and measured temperatures. By combining the Raman spectra and infrared absorption spectra analyses, the enhanced PL was suggested to be from the increased density of radiative centers related to the Si dangling bonds (K0) and N4+ or N20 as a result of bonding configuration reconstruction.

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