Deposition parameters studies of silicon nitride films prepared by plasma-enhanced CVD process using silane-ammonia

1993 ◽  
Vol 4 (4) ◽  
Author(s):  
K.R. Lee ◽  
K.B. Sundaram ◽  
D.C. Malocha
Keyword(s):  
Silicon Nitride ◽  
Plasma Enhanced Cvd ◽  
Silicon Nitride Films ◽  
Deposition Parameters

scholarly journals A study of remote plasma enhanced CVD of silicon nitride films

1993 ◽  
Vol 03 (C3) ◽  
pp. C3-233-C3-240 ◽  
Author(s):  
S. E. ALEXANDROV ◽  
M. L. HITCHMAN ◽  
S. SHAMLIAN
Keyword(s):  
Silicon Nitride ◽  
Remote Plasma ◽  
Plasma Enhanced Cvd ◽  
Silicon Nitride Films

Synthesis and Its Characteristic of Silicon Nitride Film Deposited by ECR-PECVD at Low Temperature

2010 ◽  
Vol 654-656 ◽  
pp. 1712-1715
Author(s):  
Ai Min Wu ◽  
Hong Yun Yue ◽  
X.Y. Zhang ◽  
Fu Wen Qin ◽  
T.J. Li ◽  
...  
Keyword(s):  
Refractive Index ◽  
Silicon Nitride ◽  
Low Temperature ◽  
Substrate Temperature ◽  
Microwave Power ◽  
Silicon Nitride Film ◽  
High Deposition Rate ◽  
Deposition Parameter ◽  
Silicon Nitride Films ◽  
Deposition Parameters

The silicon nitride films have been deposited by Electron Cyclotron Resonance-plasma enhanced chemical vapor deposition (ECR-PECVD) method at low temperature, and the pure nitrogen is introduced into the ECR chamber as the plasma gas, the silane(Ar diluted, Ar:SiH4=19:1) is used as precursor gas. The optimum deposition parameters of SiN films for photovoltaic application as an efficient antireflection coating(ARC) have been investigated. The actual composition of the films will be varied with the deposition conditions, such as gas flow rate ratio(N2/SiH4), substrate temperature, and microwave power. The effect of deposition parameters on the optical performance of SiN films was determined by Ellipsometry. The Si-N and N-H stretching characteristic peaks of SiN films have been observed by FTIR spectroscopy. Results shown that uniform silicon nitride films with low hydrogen content can be deposited at high deposition rate(10.7nm/min), and the refractive index increased with the increasing of substrate temperature and microwave power. The film shows good optical properties (refractive index is 2.0 or so) and satisfied surface quality (average roughness is 1.45nm) when the deposition parameter is 350oC and microwave power is 650W.

PACVD Fluorinated Silicon Nitride Films Deposited From SiF4/NH3 GAS MIXTURES

1991 ◽  
Vol 223 ◽  
Author(s):  
A. Castro ◽  
M. Gasset ◽  
C. Gomez-Aleixandre ◽  
O. Sanchez ◽  
J. M. Albella
Keyword(s):  
Silicon Nitride ◽  
Low Frequency ◽  
Fluorine Content ◽  
Emission Spectra ◽  
Deposition Process ◽  
Gas Mixtures ◽  
Silicon Nitride Films ◽  
Deposition Parameters ◽  
Wide Range ◽  
Analytical Resolution

ABSTRACTFluorinated silicon nitride films deposited from SiF4/NH3 gas mixtures by PACVD at two different frequencies have been investigated. At 13.56 MHz, low deposition rate was detected and no appreciable changes were observed when the deposition parameters varied in a wide range. On the contrary, higher deposition rates were achieved when a 35 KHz frequency was applied. These low frequency silicon nitride films showed an increase in the fluorine content In their structure when the SiF4 flow ratio in the gas mixture was increased, as detected by analytical resolution of the IR spectra. In addition, analysis of the plasma emission spectra has been performed in order to explain the effect of the plasma frequency in the deposition process.

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