Integrated MSM-FET Photoreceiver Fabricated on Mocvd Grown Hg1-xCdxTe

1990 ◽  
Vol 216 ◽  
Author(s):  
Patrick W. Leech ◽  
Peter J. Gwynn ◽  
Geoffrey N. Pain ◽  
Novica R. Petkovic ◽  
James Thompson ◽  
...  
Keyword(s):  
Dark Current ◽  
Field Effect Transistor ◽  
Gaas Substrates ◽  
Integrated Devices ◽  
Metal Semiconductor Metal ◽  
Initial Work ◽  
Effect Transistor ◽  
Lift Off ◽  
Msm Photodetectors ◽  
Photoconductive Detector

ABSTRACTWe report on progress in the monolithic integration of a metal-semiconductor-metal (MSM) detector and transimpedence amplifier and of a photoconductive detector (PCD) with a metal-semiconductor field effect transistor (MESFET) in Hg1-xCdxTe. The layers of CdTe/n-type Hg1-xCdxTe were grown by MOCVD on semi-insulating GaAs substrates (2° misoriented 100). Fabrication of the devices was by an FET planar process; with a standard lift-off used to form Schottky metallization on both the interdigitated electrodes of the MSM detector (2μm width, 2μm spacing) and the gate of the MESFETs (5μm length, 100μm width). The MSM photodetectors exhibited breakdown voltages in the range 60 to 80V, a dark current of 1 Ona at 5V bias, and responsivities of > 1.0 A/W measured at 40V using CW 1.3um illumination. The integrated devices have been characterised by electrical and micro RBS techniques; the results were found to be strongly dependent on the stoichiometric x ratio of the Hg1-xCdxTe. This initial work demonstrates the suitability of Hg1-xCdxTe/GaAs structures in the fabrication of integrated optoelectronic circuits.

5A 1300V Trenched and Implanted 4H-SiC Vertical JFET

2012 ◽  
Vol 229-231 ◽  
pp. 824-827 ◽  
Author(s):  
Gang Chen ◽  
Xiao Feng Song ◽  
Song Bai ◽  
Li Li ◽  
Yun Li ◽  
...  
Keyword(s):  
Ohmic Contact ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Vertical Channel ◽  
Drain Current ◽  
Gate Bias ◽  
Blocking Voltage ◽  
Drain Bias ◽  
Effect Transistor ◽  
Lift Off

A silicon carbide (SiC) vertical channel junction field effect transistor (VJFET) was fabricated based on in-house SiC epitaxial wafer with lift-off trenched and implanted method. Its blocking voltage exceeds 1300V at gate bias VG = -6V and forward drain current is in excess of 5A at gate bias VG = 3V and drain bias VD = 3V. The SiC VJFET device’s current density is 240A/cm2 at VG= 3V and VD = 3V, with related specific on-resistance 8.9mΩ•cm2. Further analysis reveals that the on-resistance depends greatly on ohmic contact resistance and the bonding spun gold. The specific on-resistance can be further reduced by improving the doping concentration of SiC channel epilayer and the device’s ohmic contact.

Dark current characteristics of GaAs metal-semiconductor-metal (MSM) photodetectors

1990 ◽  
Vol 37 (7) ◽  
pp. 1623-1629 ◽  
Author(s):  
W.C. Koscielniak ◽  
J.-L. Pelouard ◽  
R.M. Kolbas ◽  
M.A. Littlejohn
Keyword(s):  
Dark Current ◽  
Metal Semiconductor Metal ◽  
Current Characteristics ◽  
Msm Photodetectors

Novel Metal-Semiconductor-Metal Photodetectors on Semi-Insulating Indium Phosphide

1996 ◽  
Vol 448 ◽  
Author(s):  
J.W. Palmer ◽  
W.A. Anderson
Keyword(s):  
Indium Tin Oxide ◽  
Dark Current ◽  
Antireflection Coating ◽  
Hole Trapping ◽  
Relative Transparency ◽  
Transit Times ◽  
Metal Semiconductor Metal ◽  
The Difference ◽  
Lift Off ◽  
Inp Substrates

AbstractDepositing Pd or Au on InP at substrate temperatures near 77K has previously been found to significantly reduce the interaction between the metal and semiconductor upon formation of the interface. In this work, this technique was used to fabricate metal-semiconductor-metal photodetectors (MSMPD’s) on semi-insulating (SI) InP substrates with superior characteristics compared to detectors formed using standard room temperature (RT) metal deposition. The low-temperature (LT) metallizations were patterned using a polyimide/SiO2 lift-off mask, and a SiO antireflection coating was used to attain near-zero reflection at λ=840nm. The detectors had an active area of 200μm × 200μm, and line widths and line spacings of 3μm. Detectors having a LT-Pd/SI-InP structure had a dark current of 80nA at 5V, which was a factor of 4 lower than the dark current of conventional MSMPD’s. Additionally, LT-Pd/SI-InP MSMPD’s exhibited excellent saturation characteristics and a responsivity of 0.75 A/W. Detectors with an indium-tin-oxide (ITO)/LT-Au(200Å)/SI-InP structure had a higher responsivity of 1.0 A/W, due to the relative transparency of this metallization. In contrast, MSMPD’s with RT metallizations had poor saturation characteristics, consistent with the results of others. The difference in the illuminated characteristics of MSMPD’s with RT and LT metallizations was due to a change in the internal photoconductive gain mechanism. In RT detectors, hole trapping at interface states near the cathode dominated the gain mechanism. In LT detectors, the difference in carrier transit-times dominated.

Field Effect Transistor with Self-Organized In0.15 Ga0.85As/GaAs Quantum Wires as a Channel Grown on (553)B GaAs Substrates

2001 ◽  
Vol 18 (8) ◽  
pp. 1147-1149 ◽  
Author(s):  
Li Xian-Jie ◽  
Yan Fa-Wang ◽  
Zhang Wen-Jun ◽  
Zhang Rong-Gui ◽  
Liu Wei-Ji ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistor ◽  
Quantum Wires ◽  
Self Organized ◽  
Gaas Substrates ◽  
Effect Transistor

Metal-Semiconductor-Metal (MSM) Photodetectors Based on Single-walled Carbon Nanotube Film-GaAs Schottky Contacts

2007 ◽  
Vol 1057 ◽  
Author(s):  
Jason L. Johnson ◽  
Ashkan Behnam ◽  
Yongho Choi ◽  
Leila Noriega ◽  
Gunhan Ertosun ◽  
...  
Keyword(s):  
Carbon Nanotube ◽  
Dark Current ◽  
Thermionic Emission ◽  
Schottky Contacts ◽  
Single Walled Carbon Nanotube ◽  
Single Walled Carbon ◽  
Carbon Nanotube Film ◽  
Metal Semiconductor Metal ◽  
Control Devices ◽  
Msm Photodetectors

ABSTRACTWe experimentally study the dark and photocurrent in metal-semiconductor-metal (MSM) photodetectors based on single-walled carbon nanotube film Schottky contacts on GaAs. We find that above ∼260°K, thermionic emission of electrons with a barrier height of ∼0.54 eV is the dominant dark current transport mechanism. Furthermore, MSM devices with CNT film electrodes exhibit a higher photocurrent-to-dark current ratio while maintaining a comparable responsivity relative to control devices. This work demonstrates that nanotube films can be integrated as Schottky electrodes in conventional semiconductor optoelectronic devices.

scholarly journals Ga2O3 Field-Effect-Transistor-Based Solar-Blind Photodetector With Fast Response and High Photo-to-Dark Current Ratio

2018 ◽  
Vol 39 (11) ◽  
pp. 1696-1699 ◽  
Author(s):  
Yaxuan Liu ◽  
Lulu Du ◽  
Guangda Liang ◽  
Wenxiang Mu ◽  
Zhitai Jia ◽  
...  
Keyword(s):  
Dark Current ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Fast Response ◽  
Current Ratio ◽  
Solar Blind ◽  
Effect Transistor

A Theoretical and Experimental Comparison of 4H- and 6H-SiC MSM UV Photodetectors

2012 ◽  
Vol 717-720 ◽  
pp. 1207-1210
Author(s):  
Jang Kwon Lim ◽  
Ludwig Östlund ◽  
Qin Wang ◽  
Wlodek Kaplan ◽  
Sergey A. Reshanov ◽  
...  
Keyword(s):  
Dark Current ◽  
Experimental Comparison ◽  
Metal Electrodes ◽  
Current Ratio ◽  
Uv Photodetectors ◽  
Rejection Ratio ◽  
Uv Illumination ◽  
Metal Semiconductor Metal ◽  
Msm Photodetectors ◽  
High Rejection

This paper reports on fabrication and modeling of 4H- and 6H-SiC metal-semiconductor-metal (MSM) photodetectors (PDs). MSM PDs have been fabricated on 4H-SiC and 6H-SiC epitaxial layers, and their performance analyzed by MEDICI simulation and measurements. The simulations were also used to optimize the sensitivity by varying the width and spacing of the interdigitated electrodes. The fabricated PDs with 2 µm wide metal electrodes and 3 µm spacing between the electrodes exhibited, under UV illumination, a peak current to dark current ratio of 105 and 104 in 4H-SiC and 6H-SiC, respectively. The measured spectral responsivity of 6H-SiC PDs was higher compared to that of 4H-SiC PDs, with a cutoff at 407 nm compared to 384 nm in 4H-SiC PDs. Also the peak responsivity occurred at a shorter wavelength in 6H material. A high rejection ratio between the photocurrent and dark current was found in both cases. These experimental results were in agreement with simulation.

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