Submicron modulation-doped field-effect transistor/metal–semiconductor–metal-based optoelectronic integrated circuit receiver fabricated by direct-write electron-beam lithography

1992 ◽  
Vol 10 (6) ◽  
pp. 2936 ◽  
Author(s):  
A. Ketterson
Keyword(s):  
Electron Beam ◽  
Integrated Circuit ◽  
Electron Beam Lithography ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Direct Write ◽  
Metal Semiconductor Metal ◽  
Effect Transistor

Effect of the MOS Process on the Work-Function Difference Between the Polysilicon Gates and the Silicon Substrate

1990 ◽  
Vol 182 ◽  
Author(s):  
N. Lifshitz
Keyword(s):  
Integrated Circuit ◽  
Silicon Substrate ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Process Variations ◽  
Polysilicon Gate ◽  
Effect Transistor ◽  
Work Function Difference ◽  
Circuit Technology ◽  
Function Difference

AbstractPolysilicon gates are an important element of modem MOS integrated circuit technology. The workfunction difference (ϕps) between the polysilicon gate and the silicon substrate is a vital parameter of the MOS system because it determines the threshold voltage of the field-effect transistor. Ideally, ϕps is determined by the doping level in both polysilicon and the substrate. In reality process variations influence the ϕPS in a tangible way. Some of these effects are reviewed in the present paper.

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