scholarly journals Ga2O3 Field-Effect-Transistor-Based Solar-Blind Photodetector With Fast Response and High Photo-to-Dark Current Ratio

2018 ◽  
Vol 39 (11) ◽  
pp. 1696-1699 ◽  
Author(s):  
Yaxuan Liu ◽  
Lulu Du ◽  
Guangda Liang ◽  
Wenxiang Mu ◽  
Zhitai Jia ◽  
...  
Keyword(s):  
Dark Current ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Fast Response ◽  
Current Ratio ◽  
Solar Blind ◽  
Effect Transistor

scholarly journals Graphene Channel Liquid Container Field Effect Transistor as pH Sensor

2014 ◽  
Vol 2014 ◽  
pp. 1-6 ◽  
Author(s):  
Xin Li ◽  
Junjie Shi ◽  
Junchao Pang ◽  
Weihua Liu ◽  
Hongzhong Liu ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistor ◽  
Ph Value ◽  
Ph Sensor ◽  
Drain Current ◽  
Fast Response ◽  
Monolayer Graphene ◽  
Ph Sensing ◽  
Order Of Magnitude ◽  
Effect Transistor

Graphene channel liquid container field effect transistor pH sensor with interdigital microtrench for liquid ion testing is presented. Growth morphology and pH sensing property of continuous few-layer graphene (FLG) and quasi-continuous monolayer graphene (MG) channels are compared. The experiment results show that the source-to-drain current of the graphene channel FET has a significant and fast response after adsorption of the measured molecule and ion at the room temperature; at the same time, the FLG response time is less than 4 s. The resolution of MG (0.01) on pH value is one order of magnitude higher than that of FLG (0.1). The reason is that with fewer defects, the MG is more likely to adsorb measured molecule and ion, and the molecules and ions can make the transport property change. The output sensitivities of MG are from 34.5% to 57.4% when the pH value is between 7 and 8, while sensitivity of FLG is 4.75% when thepH=7. The sensor fabrication combines traditional silicon technique and flexible electronic technology and provides an easy way to develop graphene-based electrolyte gas sensor or even biological sensors.

scholarly journals Source-All-Around Tunnel Field-Effect Transistor (SAA-TFET): Proposal and Design

2019 ◽  
Author(s):  
Ahmed Shaker ◽  
Ahmed Maged ◽  
Ali Elshorbagy ◽  
Abdallh AbouElainain ◽  
Mona Elsabbagh
Keyword(s):  
Electric Field ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Cutoff Frequency ◽  
Tunneling Junction ◽  
Current Ratio ◽  
Junction Area ◽  
Effect Transistor ◽  
Tunnel Field Effect Transistor ◽  
Tcad Simulation

In this paper, a new source-all-around tunnel field-effect transistor (SAA-TFET) is proposed and investigated by using TCAD simulation. The tunneling junction in the SAA-TFET is divided laterally and vertically with respect to the channel direction which provides a relatively large tunneling junction area. An n+ pocket design is also introduced around the source to enhance tunneling rates and improve the device characteristics. In addition, the gate and n+ pocket region also overlap in the vertical and the lateral directions resulting in an enhanced electric field and, in turn, the ON-state current of the SAA-TFET is highly increased compared with the conventional TFET. Promising results in terms of DC (I ON , I OFF , ON/OFF current ratio and SS) and analog (cutoff frequency) performance are obtained for low (V DD = 0.5 V) and high (V DD = 1 V) supply voltages.

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