Synchrotron Topographic Studies of the Influence of Rapid Thermal Processing on Defect Structures in Single Crystal Silicon.

1990 ◽  
Vol 209 ◽  
Author(s):  
Michael Dudley ◽  
Franklin F.Y. Wang ◽  
Thomas Fanning ◽  
Georgios Tolis ◽  
Jun Wu ◽  
...  
Keyword(s):  
Single Crystal ◽  
Thermal Processing ◽  
Rapid Thermal Processing ◽  
Single Crystal Silicon ◽  
Dislocation Motion ◽  
Defect Structures ◽  
X Ray Diffraction ◽  
Crystal Silicon ◽  
Transmission Geometry

ABSTRACTSynchrotron white beam X-ray diffraction topography in transmission geometry has been used to non-destructively investigate defect structures in silicon single crystal wafers, both prior and subsequent to a 60 second rapid thermal processing (RTP) treatment at 1050°C. Prior to RTP dislocations, precipitates and swirl defects were observed and characterized. Following RTP the following effects were observed: glide of individual dislocations and dislocation multiplication; and the enhancement of the strain field associated with the swirl defects. Precipitates appeared unaffected by RTP. This work shows that synchrotron topography is capable of non-destructively revealing significant dislocation motion induced by RTP under conditions were such motion is not thought to occur. This dislocation motion is likely to be detrimental to device performance. The technique enables determination of the conditions required to avoid such dislocation motion.

Failure of micron scale Single Crystal Silicon bars due to torsion developed by MEMS micro instruments

1998 ◽  
Vol 518 ◽  
Author(s):  
Taher Saif ◽  
N. C. MacDonald
Keyword(s):  
Single Crystal ◽  
Single Crystal Silicon ◽  
Theory Of Elasticity ◽  
Shear Stresses ◽  
Electrostatic Actuator ◽  
Crystal Silicon ◽  
Cross Sectional ◽  
Lever Arm ◽  
Spring Constants

AbstractWe present an experimental study on a single crystal silicon (SCS) bar subjected to pure torsion using MEMS micro instruments. The bar is in the form of a pillar, anchored at one end to the silicon substrate. It is attached to a lever arm at the other end. The pillar has a minimum cross sectional area at its mid height. The cross section coincides with the (100) plane of SCS. Torsion is generated by applying two equal forces on the lever arm on either side of the pillar. Two micro instruments apply the forces. Each consists of an electrostatic actuator and a component that calibrates it. The actuator generates high force (≈ 200 µN at 50 V) and is capable of developing large displacements (≈ 10 μm). Calibration involves determination of the force generated by the actuator at an applied voltage, as well as the linear and higher order spring constants of its springs. Each microinstrument is thus calibrated independently.With the application of forces by the two micro instruments, a torque is generated which twists the pillar. The angle of twist at different applied voltages are recorded using an angular scale. The corresponding torques are determined from the calibration parameters of the actuators. Torque is applied until the pillar fractures. Two such sample pillars, samples 1 and 2, are tested. There cross sectional areas are 1 and 2.25 µm2. We find that both the pillars behave linearly until failure. The stresses prior to fracture are evaluated based on anisotropic theory of elasticity. Samples 1 and 2 fail at shear stresses of 5.6 and 2.6 GPa respectively. The fracture surfaces seem to coincide with the (111) plane of SCS.

Precision determination of the density of a single crystal silicon sphere and evaluation of the Avogadro constant

2001 ◽  
Vol 50 (2) ◽  
pp. 587-592 ◽  
Author(s):  
M.J. Kenny ◽  
A.J. Leistner ◽  
C.J. Walsh ◽  
K. Fen ◽  
W.J. Giardini ◽  
...  
Keyword(s):  
Single Crystal ◽  
Single Crystal Silicon ◽  
Crystal Silicon ◽  
Avogadro Constant ◽  
Precision Determination

Thickness determination of SmCo films on silicon substrates utilizing X-ray diffraction

2010 ◽  
Vol 25 (2) ◽  
pp. 149-153
Author(s):  
Isaac Vander ◽  
R. W. Zuneska ◽  
F. J. Cadieu
Keyword(s):  
Single Crystal Silicon ◽  
Magnetic Films ◽  
Mass Attenuation Coefficient ◽  
Silicon Substrates ◽  
Film Material ◽  
X Ray Diffraction ◽  
Crystal Silicon ◽  
X Ray ◽  
Si Substrates

This paper presents a nondestructive measurement technique for the determination of the film thicknesses of Co and SmCo based magnetic films deposited by sputtering on single-crystal silicon (100) substrates. X-ray diffraction of Cu Kα radiation has been used to measure the intensity of the (400) reflection from bare silicon substrates and as attenuated by sputter coated Co and SmCo based films on Si substrates. A four-axis research diffractometer allowed the substrate orientation to be fine adjusted to maximize the (400) diffraction intensity. The thickness of SmCo based films was in a range from 0.05 to 5 μm. Co film thicknesses on Si could be measured to a few tens of nanometers. The accuracy of the thickness measurements depends on the effective mass attenuation coefficient of the film material. For the materials considered, the thicknesses determined by the X-ray attenuation method agree within at least several percent to values determined by other methods.

Dependence of Crystallographic Texture of C54 Tisi2 on Thickness and Linewidth In Submicron Cmos Structures

1996 ◽  
Vol 427 ◽  
Author(s):  
V. Svilan ◽  
K. P. Rodbell ◽  
L. A. Clevenger ◽  
C. Cabral ◽  
R. A. Roy ◽  
...  
Keyword(s):  
Single Crystal ◽  
Single Crystal Silicon ◽  
Ex Situ ◽  
X Ray Diffraction ◽  
Crystal Silicon ◽  
The One ◽  
Oriented Parallel ◽  
Preferential Crystal Orientation ◽  
Line Direction

AbstractPreferential crystal orientation of low-resistance C54 TiSi2 formed in the reaction of polycrystalline and single crystal silicon with titanium was investigated for Ti thicknesses ranging from 15 to 44 nm. Using in situ synchrotron x-ray diffraction during heating of 15 nm of Ti on single crystal Si, we observed that the C54 TiSi2 silicide film showed predominantly <040> grains oriented normal to the sample. In thicker silicide films the <311> orientation dominated or film was randomly oriented. An ex situ four circle diffractometer was used to investigate the strong <040> texture in narrow line arrays of C54-TiSi2 formed on polycrystalline silicon with linewidths from 0.2 to 1.1 μm. We observed that the angular distribution of <040> Ti Si2 grains is dependent on the line direction, where the majority of grains had their (100) planes oriented parallel with the line direction. These findings support a model of the C49 to C54 TiSi2 transformation involving rapid growth of certain orientations favored by the one-dimensional geometry imposed by narrow lines.

Epitaxial Silicon-Carbon Alloy Growth by Laser Induced Melting and Solidification

1995 ◽  
Vol 398 ◽  
Author(s):  
Kenneth M. Kramer ◽  
Michael O. Thompson
Keyword(s):  
Single Crystal ◽  
Secondary Ion Mass Spectrometry ◽  
Single Crystal Silicon ◽  
Epitaxial Silicon ◽  
X Ray Diffraction ◽  
Crystal Silicon ◽  
Silicon Carbon ◽  
Transmission Electron ◽  
Excimer Laser Irradiation ◽  
Secondary Ion

ABSTRACTIon implantation of carbon into single-crystal silicon followed by excimer laser irradiation was used to create supersaturated, epitaxial SixC1-x. films. Crystallization proceeded from the underlying single-crystal silicon through the carbon containing layers at velocities of approximately 5 m/s. Characterization by high-resolution x-ray diffraction and Fourier-transform infrared absorption indicate that the carbon is found predominantly on substi-tutional lattice sites for concentrations up to 1.4 at.% C. Secondary-ion mass spectrometry profiles and numerical mass transfer calculations were used to estimate the diffusion coefficient of carbon in the liquid as 2-3 × 10−4cm2/s with a segregation coefficient greater than 0.4. Unusual diffusion behavior was observed for the carbon at 1.4 at.% C. At higher concentrations, evidence of SiC precipitates was observed in transmission electron microscope images and FTIR absorption spectra.

Synchrotron X-Ray Topographic Study of the Behavior of Defects in High Carbon-Content Si Wafers during RTP

1991 ◽  
Vol 225 ◽  
Author(s):  
Thomas Fanning ◽  
Michael Dudley ◽  
Franklyn F.Y. Wang ◽  
David Gordon-Smith ◽  
David T. Hodul
Keyword(s):  
Carbon Content ◽  
Thermal Processing ◽  
Rapid Thermal Processing ◽  
Defect Structures ◽  
Low Carbon ◽  
High Carbon ◽  
High Carbon Content ◽  
Strain Fields ◽  
X Ray ◽  
Transmission Geometry

ABSTRACTCzochralski (CZ) grown Si wafers, specially prepared with unusually high carbon content (ranging from 3 to 7 ppma), were subjected to a rapid thermal processing (RTP) treatment at 1050°C for 60s. Synchrotron white beam x-ray topography in transmission geometry was used to study defect structures in these Si wafers, both prior and subsequent to this RTP treatment. Observations of both the partial relaxation of the strain fields of precipitates and widespread nucleation and propagation of dislocations accompanying RTP are presented and discussed. Results are contrasted with those from parallel studies previously conducted on low carbon content wafers.

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