Analysis and determination of the stress-optic coefficients of thin single crystal silicon samples

2004 ◽  
Vol 96 (6) ◽  
pp. 3103-3109 ◽  
Author(s):  
S. He ◽  
T. Zheng ◽  
S. Danyluk
Keyword(s):  
Single Crystal ◽  
Single Crystal Silicon ◽  
Crystal Silicon

Failure of micron scale Single Crystal Silicon bars due to torsion developed by MEMS micro instruments

1998 ◽  
Vol 518 ◽  
Author(s):  
Taher Saif ◽  
N. C. MacDonald
Keyword(s):  
Single Crystal ◽  
Single Crystal Silicon ◽  
Theory Of Elasticity ◽  
Shear Stresses ◽  
Electrostatic Actuator ◽  
Crystal Silicon ◽  
Cross Sectional ◽  
Lever Arm ◽  
Spring Constants

AbstractWe present an experimental study on a single crystal silicon (SCS) bar subjected to pure torsion using MEMS micro instruments. The bar is in the form of a pillar, anchored at one end to the silicon substrate. It is attached to a lever arm at the other end. The pillar has a minimum cross sectional area at its mid height. The cross section coincides with the (100) plane of SCS. Torsion is generated by applying two equal forces on the lever arm on either side of the pillar. Two micro instruments apply the forces. Each consists of an electrostatic actuator and a component that calibrates it. The actuator generates high force (≈ 200 µN at 50 V) and is capable of developing large displacements (≈ 10 μm). Calibration involves determination of the force generated by the actuator at an applied voltage, as well as the linear and higher order spring constants of its springs. Each microinstrument is thus calibrated independently.With the application of forces by the two micro instruments, a torque is generated which twists the pillar. The angle of twist at different applied voltages are recorded using an angular scale. The corresponding torques are determined from the calibration parameters of the actuators. Torque is applied until the pillar fractures. Two such sample pillars, samples 1 and 2, are tested. There cross sectional areas are 1 and 2.25 µm2. We find that both the pillars behave linearly until failure. The stresses prior to fracture are evaluated based on anisotropic theory of elasticity. Samples 1 and 2 fail at shear stresses of 5.6 and 2.6 GPa respectively. The fracture surfaces seem to coincide with the (111) plane of SCS.

Precision determination of the density of a single crystal silicon sphere and evaluation of the Avogadro constant

2001 ◽  
Vol 50 (2) ◽  
pp. 587-592 ◽  
Author(s):  
M.J. Kenny ◽  
A.J. Leistner ◽  
C.J. Walsh ◽  
K. Fen ◽  
W.J. Giardini ◽  
...  
Keyword(s):  
Single Crystal ◽  
Single Crystal Silicon ◽  
Crystal Silicon ◽  
Avogadro Constant ◽  
Precision Determination

Synchrotron Topographic Studies of the Influence of Rapid Thermal Processing on Defect Structures in Single Crystal Silicon.

1990 ◽  
Vol 209 ◽  
Author(s):  
Michael Dudley ◽  
Franklin F.Y. Wang ◽  
Thomas Fanning ◽  
Georgios Tolis ◽  
Jun Wu ◽  
...  
Keyword(s):  
Single Crystal ◽  
Thermal Processing ◽  
Rapid Thermal Processing ◽  
Single Crystal Silicon ◽  
Dislocation Motion ◽  
Defect Structures ◽  
X Ray Diffraction ◽  
Crystal Silicon ◽  
Transmission Geometry

ABSTRACTSynchrotron white beam X-ray diffraction topography in transmission geometry has been used to non-destructively investigate defect structures in silicon single crystal wafers, both prior and subsequent to a 60 second rapid thermal processing (RTP) treatment at 1050°C. Prior to RTP dislocations, precipitates and swirl defects were observed and characterized. Following RTP the following effects were observed: glide of individual dislocations and dislocation multiplication; and the enhancement of the strain field associated with the swirl defects. Precipitates appeared unaffected by RTP. This work shows that synchrotron topography is capable of non-destructively revealing significant dislocation motion induced by RTP under conditions were such motion is not thought to occur. This dislocation motion is likely to be detrimental to device performance. The technique enables determination of the conditions required to avoid such dislocation motion.

Analysis of Silicon-On-Insulator Structures Formed By Oxygen Ion Implantation

1985 ◽  
Vol 43 ◽  
pp. 300-301
Author(s):  
N. Lewis ◽  
E. L. Hall ◽  
A. Mogro-Campero ◽  
R. P. Love
Keyword(s):  
Ion Implantation ◽  
Single Crystal ◽  
Single Crystal Silicon ◽  
Silicon Layer ◽  
Device Fabrication ◽  
Silicon On Insulator ◽  
High Dose ◽  
Crystal Silicon ◽  
Oxygen Ion ◽  
Oxygen Ion Implantation

The formation of buried oxide structures in single crystal silicon by high-dose oxygen ion implantation has received considerable attention recently for applications in advanced electronic device fabrication. This process is performed in a vacuum, and under the proper implantation conditions results in a silicon-on-insulator (SOI) structure with a top single crystal silicon layer on an amorphous silicon dioxide layer. The top Si layer has the same orientation as the silicon substrate. The quality of the outermost portion of the Si top layer is important in device fabrication since it either can be used directly to build devices, or epitaxial Si may be grown on this layer. Therefore, careful characterization of the results of the ion implantation process is essential.

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