Epitaxial Silicon-Carbon Alloy Growth by Laser Induced Melting and Solidification

1995 ◽  
Vol 398 ◽  
Author(s):  
Kenneth M. Kramer ◽  
Michael O. Thompson
Keyword(s):  
Single Crystal ◽  
Secondary Ion Mass Spectrometry ◽  
Single Crystal Silicon ◽  
Epitaxial Silicon ◽  
X Ray Diffraction ◽  
Crystal Silicon ◽  
Silicon Carbon ◽  
Transmission Electron ◽  
Excimer Laser Irradiation ◽  
Secondary Ion

ABSTRACTIon implantation of carbon into single-crystal silicon followed by excimer laser irradiation was used to create supersaturated, epitaxial SixC1-x. films. Crystallization proceeded from the underlying single-crystal silicon through the carbon containing layers at velocities of approximately 5 m/s. Characterization by high-resolution x-ray diffraction and Fourier-transform infrared absorption indicate that the carbon is found predominantly on substi-tutional lattice sites for concentrations up to 1.4 at.% C. Secondary-ion mass spectrometry profiles and numerical mass transfer calculations were used to estimate the diffusion coefficient of carbon in the liquid as 2-3 × 10−4cm2/s with a segregation coefficient greater than 0.4. Unusual diffusion behavior was observed for the carbon at 1.4 at.% C. At higher concentrations, evidence of SiC precipitates was observed in transmission electron microscope images and FTIR absorption spectra.

Single Crystal Silicon Carbide On Silicon Using A Supersonic Gas Jet Of Methylsilane

1997 ◽  
Vol 483 ◽  
Author(s):  
S. A. Ustin ◽  
C. Long ◽  
L. Lauhon ◽  
W. Ho
Keyword(s):  
Growth Rate ◽  
Growth Rates ◽  
Single Crystal Silicon ◽  
Maximum Growth ◽  
X Ray Diffraction ◽  
Crystal Silicon ◽  
Cross Sectional ◽  
Supersonic Molecular Beam ◽  
Transmission Electron

AbstractCubic SiC films have been grown on Si(001) and Si(111) substrates at temperatures between 600 °C and 900 °C with a single supersonic molecular beam source. Methylsilane (H3SiCH3) was used as the sole precursor with hydrogen and nitrogen as seeding gases. Optical reflectance was used to monitor in situ growth rate and macroscopic roughness. The growth rate of SiC was found to depend strongly on substrate orientation, methylsilane kinetic energy, and growth temperature. Growth rates were 1.5 to 2 times greater on Si(111) than on Si(001). The maximum growth rates achieved were 0.63 μm/hr on Si(111) and 0.375μm/hr on Si(001). Transmission electron diffraction (TED) and x-ray diffraction (XRD) were used for structural characterization. In-plane azimuthal (ø-) scans show that films on Si(001) have the correct 4-fold symmetry and that films on Si(111) have a 6-fold symmetry. The 6-fold symmetry indicates that stacking has occurred in two different sequences and double positioning boundaries have been formed. The minimum rocking curve width for SiC on Si(001) and Si(111) is 1.2°. Fourier Transform Infrared (FTIR) absorption was performed to discern the chemical bonding. Cross Sectional Transmission Electron Microscopy (XTEM) was used to image the SiC/Si interface.

Pulsed Ion-Beam Induced Reactions of Ni And Co With Amorphous and Single Crystal Silicon

1984 ◽  
Vol 35 ◽  
Author(s):  
J. O. Olowolafe ◽  
R. Fastow
Keyword(s):  
Amorphous Silicon ◽  
Ion Beam ◽  
Single Crystal Silicon ◽  
Reaction Rates ◽  
Rutherford Backscattering ◽  
Thin Layers ◽  
X Ray Diffraction ◽  
Furnace Annealing ◽  
Crystal Silicon ◽  
Transmission Electron

ABSTRACTThin layers (~1,000 A ) of Ni and Co have been reacted with both (100) and amorphous silicon (a-Si) using a pulsed ion beam. Samples were analyzed using Rutherford backscattering, x-ray diffraction, and transmission electron microscopy. Rutherford backscattering showed that the metal/a-Si and metal/(100)-Si reaction rates were comparable. Both reactions began at the composition of the lowest eutectic. For comparison. furnace annealing of the same structures showed that the reaction rate of Ni with amorphous silicon was greater than with (100) Si; Co reacted nearly identically with both substrates. Diffraction data suggest that pulsed ion beam annealing crystallizes the amorphous silicon before the metal/a-Si reaction begins.

Strain-Induced Diffusion in Heteroepitaxially Grown CuInSe2 on GaAs Substrates

1995 ◽  
Vol 399 ◽  
Author(s):  
P. Fons ◽  
S. Niki ◽  
A. Yamada ◽  
A. Okada ◽  
D.J. Tweet
Keyword(s):  
Thin Film ◽  
Secondary Ion Mass Spectrometry ◽  
Second Phase ◽  
X Ray Diffraction ◽  
X Ray ◽  
State Of Stress ◽  
Gaas Substrates ◽  
Transmission Electron ◽  
Secondary Ion ◽  
Lattice Matched

ABSTRACTA series of CuInSe2 thin films of varying thicknesses were grown on both GaAs(001) substrates and nominally lattice-matched In0.29Ga0.71As (001) linearly graded buffers by MBE at 450°C. Transmission electron microscopy and high resolution x-ray diffraction measurements revealed the presence of a second phase with chalcopyrite symmetry strained to the CuInSe2 thin film in-plane lattice constant for CuInSe2 films grown on GaAs substrates. Further examination confirmed that the second phase possessed chalcopyrite symmetry. No second phase was observed in films grown on nearly lattice-matched In0.29Ga0.71As (001) linearly graded buffers. Secondary ion mass spectrometry confirmed the presence of interdiffusion from of Ga from the substrate into the CuInSe2layer. It is speculated that this diffusion is related to the state of stress due to heteroepitaxial misfit.

A study of 2 MeV oxygen implantation to form deeply buried SiO2 layers

1989 ◽  
Vol 4 (5) ◽  
pp. 1227-1232 ◽  
Author(s):  
J. J. Grob ◽  
A. Grob ◽  
P. Thevenin ◽  
P. Siffert ◽  
C. d'Anterroches ◽  
...  
Keyword(s):  
Single Crystal ◽  
Single Crystal Silicon ◽  
Single Step ◽  
Annealing Process ◽  
Dislocation Network ◽  
Crystal Silicon ◽  
Cross Sectional ◽  
Transmission Electron ◽  
Distribution Moments ◽  
Best Fit

Oxygen ions were implanted into (100) oriented single crystal Si at energies in the range of 0.6 to 2 MeV at normal and oblique (60°) incidences. Oxygen concentration profiles were measured using the 16O(d, α)14N nuclear reaction for 900 keV deuterons. The experimentally measured oxygen distributions were subsequently fitted to the theoretical profiles calculated assuming the Pearson VI distribution. The distribution moments (Rp, ΔRp, ΔR⊥ skewness, and kurtosis) were deduced as the best fit parameters and compared to the computer simulation results (TRIM 87 and PRAL). Whatever the calculation method, the measured Rp and ΔRp values are close to those predicted by the theory. Deeply buried SiO2 layers were formed using a single step implantation and annealing process. A dose of 1.8 × 1018/cm2 of 2 MeV O+ was implanted into the Si substrate maintained at a temperature of 550 °C. The implanted samples were characterized using the Rutherford backscattering (RBS)/channeling technique and cross-sectional transmission electron microscopy (XTEM). The implanted samples were subsequently annealed at 1350 °C for 4 h in an Ar ambient. The annealing process results in creating a continuous SiO2 layer, 0.4 μm thick below a 1.6 μm thick top single crystal silicon overlayer. The buried SiO2 layer contains the well-known faceted Si inclusions. The density of dislocations within the top Si layer remains lower than the XTEM detection limit of 107/cm2. Between the Si overlayer and the buried SiO2 a layer of faceted longitudinal SiO2 precipitates is present. A localized dislocation network links the precipitates to the buried SiO2 layer.

Low thermal budget epitaxial lift off (ELO) for Ge (111)-on-insulator structure

2021 ◽  
Author(s):  
Wen-Hsin Chang ◽  
Hsien-Wen Wan ◽  
Yi-Ting Cheng ◽  
Yen-Hsun Glen Lin ◽  
Toshifumi IRISAWA ◽  
...  
Keyword(s):  
Mass Spectrometry ◽  
Secondary Ion Mass Spectrometry ◽  
X Ray Diffraction ◽  
Thermal Budget ◽  
X Ray ◽  
Transmission Electron ◽  
Lift Off ◽  
Low Thermal Budget ◽  
3D Applications ◽  
Secondary Ion

Abstract Germanium-on-Insulator (GeOI) structures with the surface orientation of (111) have been successfully fabricated by using low thermal budget epitaxial-lift-off (ELO) technology via direct bonding and selective etching. The material characteristics and transport properties of the Ge(111)OI structure have been systematically investigated through secondary-ion mass spectrometry, Raman spectroscopy, X-ray diffraction, high-resolution transmission electron microscope, and Hall measurement. The transferred Ge (111) layer remained almost intact from the as-grown epitaxial layers, indicating the benefits of ELO technology. The low thermal budget ELO technology demonstrated in this work is promising to integrate Ge channels with different surface orientations on Si (100) substrates for future monolithic 3D applications.

Epitaxial Silicon on Yttria-Stabilized Cubic Zirconia (YSZ) and Subsequent Oxidation of the Si/YSZ Interface

1984 ◽  
Vol 37 ◽  
Author(s):  
L. M. Mercandalli ◽  
D. Pribat ◽  
M. Dupuy ◽  
C. Arnodo ◽  
D. Rondi ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Single Crystal Silicon ◽  
High Energy ◽  
Silicon Films ◽  
Epitaxial Silicon ◽  
Electrical Measurements ◽  
Crystal Silicon ◽  
Transmission Electron ◽  
Microscopy Techniques

Astract(100) single crystal silicon films have been deposited onto (100) oriented Yttria-Stabilized Zirconia (YSZ) substrates by pyrolysis of SiH4 at ∼ 980°C.The as deposited epitaxial silicon films have been characterized by Reflexion High Energy Electron Diffraction and Transmission Electron Microscopy techniques.The as deposited silicon films have also been oxidized by oxygen transport through the substrate, resulting in a Si(100)/ amorphous SiO2/YSZ(100) structure in which the most defective part of the epitaxial silicon deposit has been eliminated. The oxidized interfaces (with SiO2 thicknesses in the 2000 Å range) have then been characterized by Transmission Electron Microscopy in order to assess the improvement in crystalline quality. Electrical measurements have also been performed on MOS-Hall bar structures.

Carrier Confinement Effects in Epitaxial Silicon Quantum Wells Prepared by MOCVD

1994 ◽  
Vol 358 ◽  
Author(s):  
H. Paul Maruska ◽  
R. Sudharsanan ◽  
Eric Bretschneider ◽  
Albert Davydov ◽  
J.E. Yu ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Secondary Ion Mass Spectrometry ◽  
Silicon Nanostructures ◽  
Silicon Substrates ◽  
Epitaxial Silicon ◽  
Edge Emission ◽  
Transmission Electron ◽  
Secondary Ion ◽  
Lattice Matched ◽  
Zns Films

ABSTRACTSilicon multiquantum wells ranging in width from 3 to 15 nm were deposited on closely lattice-matched ZnS barriers. MOCVD was used to deposit the ZnS films using diethyl zinc and hydrogen sulfide as the precursors; disilane was used to deposit silicon layers at low temperatures. Single and multiple silicon nano-layers were observed by transmission electron microscopy and secondary ion mass spectrometry. Photoluminesence studies revealed emissions peaks which were blue-shifted with respect to the edge emission from bulk silicon substrates. The observation of emission from silicon nanostructures shifted to wavelengths as short as the 800-850 nm range is consistent with the effects of quantum confinement in silicon nanostructures.

Dependence of Crystallographic Texture of C54 Tisi2 on Thickness and Linewidth In Submicron Cmos Structures

1996 ◽  
Vol 427 ◽  
Author(s):  
V. Svilan ◽  
K. P. Rodbell ◽  
L. A. Clevenger ◽  
C. Cabral ◽  
R. A. Roy ◽  
...  
Keyword(s):  
Single Crystal ◽  
Single Crystal Silicon ◽  
Ex Situ ◽  
X Ray Diffraction ◽  
Crystal Silicon ◽  
The One ◽  
Oriented Parallel ◽  
Preferential Crystal Orientation ◽  
Line Direction

AbstractPreferential crystal orientation of low-resistance C54 TiSi2 formed in the reaction of polycrystalline and single crystal silicon with titanium was investigated for Ti thicknesses ranging from 15 to 44 nm. Using in situ synchrotron x-ray diffraction during heating of 15 nm of Ti on single crystal Si, we observed that the C54 TiSi2 silicide film showed predominantly <040> grains oriented normal to the sample. In thicker silicide films the <311> orientation dominated or film was randomly oriented. An ex situ four circle diffractometer was used to investigate the strong <040> texture in narrow line arrays of C54-TiSi2 formed on polycrystalline silicon with linewidths from 0.2 to 1.1 μm. We observed that the angular distribution of <040> Ti Si2 grains is dependent on the line direction, where the majority of grains had their (100) planes oriented parallel with the line direction. These findings support a model of the C49 to C54 TiSi2 transformation involving rapid growth of certain orientations favored by the one-dimensional geometry imposed by narrow lines.

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