Diethylsilane as a Silicon Source for the Deposition of Silicon Nitride and Silicon Oxynitride Films by LPCVD

1990 ◽  
Vol 204 ◽  
Author(s):  
Arthur K. Hochberg ◽  
David L. O'Meara
Keyword(s):  
Silicon Nitride ◽  
Silicon Oxynitride ◽  
Refractive Indices ◽  
Silicon Source ◽  
Temperature Range ◽  
Minimum Detectable Limit ◽  
Partial Pressures ◽  
Oxidation Resistant ◽  
Nitride Layers ◽  
Carbon Concentrations

ABSTRACTA purified diethylsilane (DES), LTO-410TM, has been studied as a silicon precursor for the deposition of silicon nitride and silicon oxynitride films by LPCVD. In the temperature range from 650 to 725°C mixtures of DES and NH3 produce uniform, oxidation resistant silicon nitride layers. Auger and RBS analyses show that the carbon concentrations in the films are correlated with the DES partial pressures. The film refractive indices also correlate with the carbon levels in the films for a fixed deposition temperature. Mixtures of DES, NH3, and N2O deposit silicon oxynitride films in the temperature range from 650 to 700°C with compositions controlled by the NH3:N2O ratio for a fixed DES flow. These films have carbon levels below the minimum detectable limit of Auger and RBS analyses.

Microstructure of the Oxidized Surface of Rare-Earth Disilicate - Silicon Nitride Ceramics

1991 ◽  
Vol 49 ◽  
pp. 928-929
Author(s):  
Michael K. Cinibulk
Keyword(s):  
High Temperature ◽  
Silicon Nitride ◽  
Elevated Temperatures ◽  
Boundary Phase ◽  
Silicate Phase ◽  
Temperature Oxidation ◽  
Partial Pressures ◽  
Nitride Ceramics ◽  
Oxidation Resistant ◽  
Rate Limiting

Silicon nitride ceramics are being considered for use as structural materials in high-temperature oxidizing environments. Silicon nitride itself is extremely oxidation resistant due to the protective SiO2 layer, which results from exposure to high oxygen partial pressures at elevated temperatures. However, hightemperature exposure of silicon nitride sintered with oxide additives leads to accelerated oxidation attributable to the enhanced oxidation of Si3N4 dissolved in a silicate phase present at the surface. Since diffusion of additive and impurity cations through an amorphous grain-boundary phase from the bulk to the surface oxide scale is rate limiting, obtaining crystalline phases in equilibrium with SiO2 should eliminate the driving force for cation diffusion and improve oxidation resistance. Characterization by electron microscopy of the oxidized surfaces resulting from high-temperature oxidation is necessary to understand and solve these problems.

The Interactions of Carbon and Nitrogen in Liquid Silicon

2014 ◽  
Vol 33 (4) ◽  
pp. 363-368 ◽  
Author(s):  
Halvor Dalaker ◽  
Merete Tangstad
Keyword(s):  
Silicon Nitride ◽  
Carbon Source ◽  
Nitrogen Content ◽  
High Purity ◽  
Liquid Silicon ◽  
Interaction Parameters ◽  
Carbon And Nitrogen ◽  
Temperature Range ◽  
High Purity Silicon

AbstractThe interactions between carbon and nitrogen in liquid silicon have been studied experimentally. High purity silicon was melted in silicon nitride crucibles under an Ar atmosphere with a graphite slab inserted in the crucible prior to melting as a carbon source. The system was thus simultaneously equilibrated with Si3N4 and SiC. Samples were extracted in the temperature range 1695–1798 K and analyzed using Leco.It was observed that the simultaneous saturation of nitrogen and carbon caused a significant increase in the solubilities of both elements. The interaction parameters were derived as The solubility of carbon in liquid silicon as a function of temperature and nitrogen content was found to follow: And the solubility of nitrogen in liquid silicon found to follow:

Kinetics of silicon nitride crystallization in N+-implanted silicon

1989 ◽  
Vol 4 (2) ◽  
pp. 394-398 ◽  
Author(s):  
V. S. Kaushik ◽  
A. K. Datye ◽  
D. L. Kendall ◽  
B. Martinez-Tovar ◽  
D. S. Simons ◽  
...  
Keyword(s):  
Silicon Nitride ◽  
Amorphous Silicon ◽  
Crystalline Silicon ◽  
Wafer Surface ◽  
Amorphous Silicon Nitride ◽  
Silicon Lattice ◽  
Nitrogen Ions ◽  
The Mean ◽  
Nitride Layers ◽  
Kinetics Of

Implantation of nitrogen at 150 KeV and a dose of 1 ⊠ 1018/cm2 into (110) silicon results in the formation of an amorphized layer at the mean ion range, and a deeper tail of nitrogen ions. Annealing studies show that the amorphized layer recrystallizes into a continuous polycrystalline Si3N4 layer after annealing for 1 h at 1200 °C. In contrast, the deeper nitrogen fraction forms discrete precipitates (located 1μm below the wafer surface) in less than 1 min at this temperature. The arcal density of these precipitates is 5 ⊠ 107/cm2 compared with a nuclei density of 1.6 ⊠ 105/cm2 in the amorphized layer at comparable annealing times. These data suggest that the nucleation step limits the recrystallization rate of amorphous silicon nitride to form continuous buried nitride layers. The nitrogen located within the damaged crystalline silicon lattice precipitates very rapidly, yielding semicoherent crystallites of β–Si3N4.

Recrystallization of Oxygen Contaminated Al Films

1986 ◽  
Vol 71 ◽  
Author(s):  
G.J. Van Der Kolk ◽  
M.J. Verkerk
Keyword(s):  
Grain Size ◽  
Silicon Nitride ◽  
Substrate Temperature ◽  
Oxygen Partial Pressure ◽  
Partial Pressure ◽  
Size Distribution ◽  
Grain Size Distribution ◽  
Relative Increase ◽  
Partial Pressures ◽  
Average Grain Size

AbstractAl was evaporated at oxygen partial pressures, PO2, varying between 10−7 and 10−4 Pa on substrates of silicon nitride. The substrate temperature was varied between 20 °C and 250°C. The films were annealed at temperatures up to 500°C.For Al films deposited at 20°C, it was found that the average grain size decreases with increasing oxygen partial pressure. After annealing recrystallization was observed. The relative increase of grain size was less for higher values of pO2. Annealing gave rise to a broad grain size distribution.For Al films deposited at 250°C, the presence of oxygen caused the growth of rough inhomogeneous films. This inhomogeneous structure remained during annealing.

Heterogeneous Formation of Oriented Silicon Oxynitride on α-Si3N4 Seed Crystals : Habits And Radiation Stability

1999 ◽  
Vol 5 (S2) ◽  
pp. 778-779
Author(s):  
R.W Carpenter ◽  
W Braue ◽  
M.J. Kim
Keyword(s):  
Silicon Nitride ◽  
Heterogeneous Nucleation ◽  
Radiation Stability ◽  
Silicon Oxynitride ◽  
Minor Constituent ◽  
Sintering Aids ◽  
Sintering Aid ◽  
Nucleation Sites ◽  
Heterogeneous Formation ◽  
A Minor

Lath-like silicon oxynitride crystals have often been observed in the microstructure of silicon nitride based ceramics after processing. They are usually located in glassy regions which are siliceous solidified sintering aid liquid, and usually contain a small (∼100nm) a-Si3N4 crystal. These nitride crystals are considered to be seeds, incompletely dissolved in the melt, that are heterogeneous nucleation sites for the oxynitride crystals. We present here the first observations of morphological and crystallographic habits between the seed nanocrystals and the host oxynitride laths.Fig. 1 shows a typical oxynitride lath containing a nitride seed crystal. The lath is surrounded by glass and ß-Si3N4 particles, and a small cristobalite particle (a minor constituent). This microstructure is from an Si02-Si3N4 ceramic processed with Al2O3 sintering aid. The same oxynitride lath/seed structures were observed when other sintering aids (eg. Y2O3, MgO, ZrO2) were used, so they are independent of sintering aid.

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