The effect of heat treatment on silicon nitride layers on silicon

1967 ◽  
Vol 20 (1) ◽  
pp. 131-142 ◽  
Author(s):  
D. J. D. Thomas
Keyword(s):  
Heat Treatment ◽  
Silicon Nitride ◽  
Nitride Layers

Kinetics of silicon nitride crystallization in N+-implanted silicon

1989 ◽  
Vol 4 (2) ◽  
pp. 394-398 ◽  
Author(s):  
V. S. Kaushik ◽  
A. K. Datye ◽  
D. L. Kendall ◽  
B. Martinez-Tovar ◽  
D. S. Simons ◽  
...  
Keyword(s):  
Silicon Nitride ◽  
Amorphous Silicon ◽  
Crystalline Silicon ◽  
Wafer Surface ◽  
Amorphous Silicon Nitride ◽  
Silicon Lattice ◽  
Nitrogen Ions ◽  
The Mean ◽  
Nitride Layers ◽  
Kinetics Of

Implantation of nitrogen at 150 KeV and a dose of 1 ⊠ 1018/cm2 into (110) silicon results in the formation of an amorphized layer at the mean ion range, and a deeper tail of nitrogen ions. Annealing studies show that the amorphized layer recrystallizes into a continuous polycrystalline Si3N4 layer after annealing for 1 h at 1200 °C. In contrast, the deeper nitrogen fraction forms discrete precipitates (located 1μm below the wafer surface) in less than 1 min at this temperature. The arcal density of these precipitates is 5 ⊠ 107/cm2 compared with a nuclei density of 1.6 ⊠ 105/cm2 in the amorphized layer at comparable annealing times. These data suggest that the nucleation step limits the recrystallization rate of amorphous silicon nitride to form continuous buried nitride layers. The nitrogen located within the damaged crystalline silicon lattice precipitates very rapidly, yielding semicoherent crystallites of β–Si3N4.

Silicon Nitride Optimisation for A-Si:H Tfts Used in Projection LC-TVS

1994 ◽  
Vol 336 ◽  
Author(s):  
I. D. French ◽  
C. J. Curling ◽  
A.L. Goodyear
Keyword(s):  
Thin Films ◽  
Silicon Nitride ◽  
Electrical Performance ◽  
Storage Capacitor ◽  
Electrical Characteristics ◽  
Large Area ◽  
Step Coverage ◽  
Minimum Number ◽  
Physical Shape ◽  
Nitride Layers

ABSTRACTMulti-layer devices based on thin films in Large Area Electronics have different intrinsic and extrinsic properties that must be optimised to produce the correct physical shape of the device, in addition to having acceptable electrical characteristics. For instance it is quite easy to produce individual layers optimised for electrical performance that will physically “pull off’ underlying films, or result in poor step coverage. The factors that must be considered include mechanical stress, etching rates and profiles, thickness and stoichiometry uniformity, and thermal budgets, as well as electrical characteristics. This paper gives an example of silicon nitride optimisation for use in a-Si:H TFT projection displays. Three different silicon nitride layers were included to give a storage capacitor, together with controlled etch profiles for step coverage. The layers were optimised with respect to several different parameters in the minimum number of depositions by the use of experimental design techniques.

OUTDIFFUSION THROUGH SILICON OXIDE AND SILICON NITRIDE LAYERS ON GALLIUM ARSENIDE

1970 ◽  
Vol 17 (8) ◽  
pp. 332-334 ◽  
Author(s):  
J. Gyulai ◽  
J. W. Mayer ◽  
I. V. Mitchell ◽  
V. Rodriguez
Keyword(s):  
Gallium Arsenide ◽  
Silicon Nitride ◽  
Silicon Oxide ◽  
Nitride Layers

Vacuum Heat Treatment of MgO -Densified Pressureless Sintered Silicon Nitride Ceramics

2007 ◽  
Vol 554 ◽  
pp. 107-112 ◽  
Author(s):  
V. Demir ◽  
Derek P. Thompson
Keyword(s):  
Heat Treatment ◽  
Silicon Nitride ◽  
Pressureless Sintering ◽  
Vacuum Heat Treatment ◽  
Sem Images ◽  
Edx Analysis ◽  
Heat Treated ◽  
Nitride Ceramics ◽  
Different Temperatures ◽  
Sintered Silicon

Silicon nitride samples were pressureless sintered with up to 5 w/o MgO to give densities in the range 98-99% of theoretical. After pressureless sintering, selected samples were placed in a vacuum heat treatment furnace surrounded by a carbon bed in a carbon crucible at a pressure of less than 4x10-4 mbar, and vacuum heat treated at different temperatures and times to remove grainboundary glass. The results showed that this was substantially achieved at 1575oC for 3h and that increasing the time to 5 hours gave still further improvement. SEM images, EDX analysis and oxidation tests provided additional evidence for the removal of Mg from the samples.

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