The Incorporation and Behavior of Oxygen in AlGaAs Grown by Mombe Using Trimethylamine Alane

1990 ◽  
Vol 204 ◽  
Author(s):  
C. R. Abernathy ◽  
J. Song ◽  
W. S. Hobson ◽  
S. J. Pearton ◽  
F. Ren ◽  
...  
Keyword(s):  
High Speed ◽  
Room Temperature ◽  
Molecular Beam ◽  
Heterojunction Bipolar Transistor ◽  
Dopant Activation ◽  
Residual Oxygen ◽  
Oxygen Contamination ◽  
Metal Organic ◽  
And Behavior ◽  
Trimethylamine Alane

ABSTRACTTrimethylamine alane (TMAAl) has been demonstrated to be a superior Al precursor for growth of AIGaAs by metal-organic molecular beam (MOMBE). TMAA1 reduces both carbon and oxygen contamination relative to the standard Al source, triethylaluminum (TEA1). However, AlGaAs grown with TMAAl still shows a residual oxygen background of ∼2 × 1018 cm−3 when used with triethylgallium (TEGa) and either As4 or ASH3. This background is independent of Al mole fraction and is due primarily to alkoxides in the TEGa. AIGaAs grown with TMAAl and elemental Ga contains oxygen at levels commonly obtained in MBE, −2 × 1017 cm-3. While an oxygen level of −2 × 1018 cm-3 is not desirable, we have found that most of this impurity is electrically inactive as evidenced by room temperature photoluminescence and n-type dopant activation. In light of this, we have assessed the applicability of AlGaAs grown with TMAAl to the fabrication of high-speed GaAs/AIGaAs devices. The source is found to be suitable for structures like the heterojunction bipolar transistor.

High electron mobility in nearly-dislocation-free hexagonal InN

2021 ◽  
Author(s):  
Ling Chen ◽  
Shanshan Sheng ◽  
Bowen Sheng ◽  
Tao Wang ◽  
Liuyun Yang ◽  
...  
Keyword(s):  
Electron Mobility ◽  
High Speed ◽  
Room Temperature ◽  
Molecular Beam ◽  
Electronic Device ◽  
High Mobility ◽  
Hall Effect Measurement ◽  
Threading Dislocation ◽  
High Electron ◽  
Transmission Electron

Abstract We demonstrate a recorded directed-probed electron mobility of ~4850 cm2/Vs in nearly-dislocation-free hexagonal InN at room temperature by Hall-effect measurement. Those extremely high quality InN are achieved through droplet-assisted epitaxy on GaN/sapphire template by molecular beam epitaxy. They behave as crystals with diameter of several micrometers, being confirmed to be nearly free of threading dislocation by transmission electron microscopy. The achievement of such high mobility InN provides promising opportunities for fabricating high speed electronic device.

Growth of GaAs and AlGaAs by MOMBE Using Phenylarsine

1991 ◽  
Vol 240 ◽  
Author(s):  
C. R. Abernathy ◽  
P. Wisk ◽  
S. J. Pearton ◽  
F. Ren ◽  
D. A. Bohling ◽  
...  
Keyword(s):  
Growth Rate ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
The Other ◽  
Carbon Uptake ◽  
Oxygen Impurity ◽  
Impurity Incorporation ◽  
Growth System ◽  
Metal Organic ◽  
Trimethylamine Alane

ABSTRACTBecause of the extreme toxicity ofA3, it is highly desirable to employ gaseous As sources which contain fewer As-H bonds. Attempts to introduce compounds such as tertiarybutylarsine (TBAs) during growth by metal-organic molecular beam epitaxy (MOMBE) have been somewhat unsuccessful due to the need for pre-cracking of these materials, and to the extreme reactivity of the hydrocarbon radicals released upon their decomposition. These byproducts have been found to severely degrade various components in the growth system, and could lead to enhanced carbon uptake at low growth temperatures. Phenylarsine (PhAs) offers several advantages over the more common As substitutes as it has been demonstrated to decompose at growth temperatures of ≥575°C, and the byproducts of its decomposition are expected to be far less reactive than the byproducts of the other As precursors.In this paper we will discuss the growth of GaAs and AlGaAs at low growth temperatures (≤530°C) using PhAs as the As source. In this temperature range, the III-V growth rate is restricted due to the cracking efficiency of the PhAs. For example, at 530°C, a PhAs flow rate of ∼5.4 seem limits the growth rate to ∼95 Å/ min while a similar flow of AsH3 through a low pressure cracker allows for deposition at rates >250 Å/min. Further comparisons of the two As sources will be discussed regarding their effect on GaAs and AlGaAs growth rates from triethylgallium, trimethylgallium, and trimethylamine alane, and their effect on carbon and oxygen impurity incorporation.

Non-Equilibrium InSb/InAISb Diodes Grown by MBE

1997 ◽  
Vol 484 ◽  
Author(s):  
A D Johnson ◽  
A B J Smout ◽  
J W Cairns ◽  
G J Pryce ◽  
A J Pidduck ◽  
...  
Keyword(s):  
Room Temperature ◽  
Molecular Beam ◽  
Device Performance ◽  
Leakage Currents ◽  
Lower Growth ◽  
Dopant Activation ◽  
Atomic Force ◽  
Temperature Window ◽  
Lower Growth Temperature ◽  
Non Equilibrium

AbstractThe application of non-equilibrium transport techniques to Molecular Beam Epitaxy (MBE) grown InSb/InAlSb heterostructure diodes has produced practical devices such as midinfrared LED's and negative luminescent sources that operate at room temperature. By extending the epitaxial growth to vicinal InSb substrates it has been demonstrated that the temperature window for high quality epitaxy can be lowered by ∼12°C, giving greatly improved epilayer morphology. The degree of misorientation needed for given growth temperatures is shown from Atomic Force Microscope (AFM) measurements to be only ∼2°. In addition, the lower growth temperature gives improved dopant activation, lower trap densities and lower reverse bias leakage currents, with consequent benefits to device performance.

Optical Properties of Multiple, Delta-doped Si:B/Si Layers

2006 ◽  
Vol 958 ◽  
Author(s):  
Han-Yun Chang ◽  
Eun-Kyu Lee ◽  
Boris V. Kamenev ◽  
Jean-Marc Baribeau ◽  
David J. Lockwood ◽  
...  
Keyword(s):  
Electron Spectroscopy ◽  
High Speed ◽  
Room Temperature ◽  
Molecular Beam ◽  
Structural Defects ◽  
Metal Insulator ◽  
Dopant Segregation ◽  
Optical Reflection ◽  
Insulator Phase Transition ◽  
Reported Data

ABSTRACTReliable fabrication of high-speed, delta-doped transistors and better understanding of two-dimensional metal-insulator transitions can be achieved using silicon molecular beam epitaxy (MBE). However, this fabrication technique should be performed with care, avoiding dopant segregation on epitaxial Si surfaces and improving the doping efficiency. Here we report comprehensive structural and optical investigations of MBE-grown Si/delta-doped Si:B multilayer structures. Measurements of Auger electron spectroscopy, Raman scattering, optical reflection and photoluminescence are performed. Our results indicate nearly metallic conductivity at room temperature with metal-insulator phase transition near T ∼100 K. In contrast to recently reported data, no enhancement of photoluminescence at room temperature is found. Occasionally, a few samples in specific areas exhibit strong photoluminescence at 1.4-1.6 micron attributed to structural defects, most likely due to B segregation.

Steady-State Versus Rapid Thermal Annealing of Phosphorusimplanted Pseudomorphic Si(100)/Ge0.12Si0.88

1994 ◽  
Vol 342 ◽  
Author(s):  
D. Y. C. Lie ◽  
J. H. Song ◽  
N. D. Theodore ◽  
F. Eisen ◽  
M.-A. Nicolet ◽  
...  
Keyword(s):  
Steady State ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Room Temperature ◽  
Molecular Beam ◽  
Strain Relaxation ◽  
Furnace Annealing ◽  
Dopant Activation ◽  
X Ray ◽  
Projected Range

ABSTRACTPseudomorphic Ge0.12Si0.88 films 265 nm thick grown by molecular beam epitaxy on p- Si(100) substrates were implanted with 100 keV 31P at room temperature for a dose of 5 x 1013/cm2. The projected range of the implanted P is about half the epilayer thickness. The implanted layers, together with non-implanted virgin samples, were subsequently annealed by both rapid thermal annealing in nitrogen and by steady-state furnace annealing in vacuum. The damage and strain of the annealed layers were studied by 4He channeling and x-ray doublecrystal diffraction. For a dose of 5 x 1013 P /cm2, both the damage and strain introduced by implantation can be completely removed, within instrumental sensitivity, by rapid thermal annealing at 700 °C for 10 - 40 s. Furnace annealing at 550 °C for 30 min for this sample removes most of the damage and strain induced by implantation. Furnace annealing at 700 °C or higher worsens the crystallinity of the layer and the strain relaxes. Hall measurements were performed on the same samples. Furnace annealing cannot achieve good dopant activation without introducing significant strain relaxation to the heterostructure, while rapid thermal annealing can.

High speed non-selfaligned InP/InGaAs Npn heterojunction bipolar transistor grown by low pressure metal organic vapour phase epitaxy

1992 ◽  
Vol 28 (9) ◽  
pp. 832 ◽  
Author(s):  
P.M. Enquist ◽  
D.B. Slater ◽  
P.A. Sekula-Moise ◽  
S.M. Vernon ◽  
V.E. Haven ◽  
...  
Keyword(s):  
High Speed ◽  
Low Pressure ◽  
Vapour Phase ◽  
Bipolar Transistor ◽  
Heterojunction Bipolar Transistor ◽  
Vapour Phase Epitaxy ◽  
Metal Organic ◽  
Organic Vapour

High speed waveguide-integrated photodiodes grown by metal organic molecular beam epitaxy

1992 ◽  
Vol 28 (4) ◽  
pp. 344 ◽  
Author(s):  
N. Emeis ◽  
M. Schier ◽  
L. Hoffmann ◽  
H. Heinecke ◽  
B. Baur
Keyword(s):  
Molecular Beam Epitaxy ◽  
High Speed ◽  
Molecular Beam ◽  
Metal Organic

Dopant Activation And Epitaxial Regrowth in P-Implanted Pseudomorphic Ge0.12Si0.88 Layers on Si (100)

1993 ◽  
Vol 321 ◽  
Author(s):  
D. Y. C. Lie ◽  
T. K. Cams ◽  
N. D. Theodore ◽  
F. Eisen ◽  
M.-A. Nicolet ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Film Thickness ◽  
Electron Mobility ◽  
Room Temperature ◽  
Molecular Beam ◽  
Solid Phase ◽  
Dopant Activation ◽  
Projected Range ◽  
Epitaxial Regrowth ◽  
Virgin Sample

AbstractA pseudomorphic Ge0.12Si0.88 film 265 nm thick grown on a Si (100) substrate by molecular beam epitaxy was implanted at room temperature with a dose of 1.5 × 1015 cm2 of 100 keV P ions. The projected range of the ions is about 125 nm, which is well within the film thickness. Only the top portion of the Ge0.12Si0.88 layer was amorphized by the implantation. Both implanted and non-implanted samples were subsequently annealed in vacuum for 30 Minutes from 400 °C to 800 °C. Values of electron Hall sheet mobility and concentration in the implanted Ge0.12Si0.88 epilayer were measured after annealing. The solid phase epitaxial regrowth is complete at 550 °C, where the implanted phosphorus reaches - 100 % activation. The regrown Ge0.12Si0.88 layer exhibits inferior crystalline quality to that of the virgin sample and is relaxed, but the non-implanted portion of the film remains pseudomorphic at 550 °C. When annealed at 800 °C, the strain in the whole epilayer relaxes. The sheet electron mobility values measured at room temperature in the regrown samples (Tann ≥ 550 °C) are about 20% less than those of pure Si.

Comparison of Dislane and Tetraethyltin as Gaseous Dopants for Growth of n-GaAs and O-AlGaAs by MOMBE

1991 ◽  
Vol 240 ◽  
Author(s):  
P. Wisk ◽  
C. R. Abernathy ◽  
S. J. Pearton ◽  
F. Ren ◽  
T. Fullowan ◽  
...  
Keyword(s):  
Heterojunction Bipolar Transistors ◽  
Growth Temperature ◽  
Molecular Beam ◽  
Dopant Concentration ◽  
Bipolar Transistors ◽  
Growth Surface ◽  
Dopant Incorporation ◽  
Collector Junction ◽  
Metal Organic ◽  
Trimethylamine Alane

ABSTRACTWe have investigated the effect of growth temperature and V/III ratio on dopant incorporation from disilane (Si2H6) and tetraethyltin (TESn) over the temperature range 475°C-525°C during growth of GaAs by metal organic molecular beam epitaxy (MOMBE). Increasing V/III ratio produced only a slight decrease in the dopant concentration while increasing growth temperature resulted in slighdy higher dopant levels. Addition of Al and H to the growth surface via introduction of trimethylamine alane had no apparent effect on dopant incorporation. No significant differences were observed in the incorporation behaviors of Si2H6 and TESn, and both sources yielded comparable base-collector junction behavior when used for growth of heterojunction bipolar transistors (HBTs).

TEM study of phosphorus-implanted pseudomorphic Si0.88Ge0.12 on Si(100)

1995 ◽  
Vol 53 ◽  
pp. 468-469
Author(s):  
N. David Theodore ◽  
Donald Y.C Lie ◽  
J. H. Song ◽  
Peter Crozier
Keyword(s):  
Integrated Circuits ◽  
Heterojunction Bipolar Transistors ◽  
Integrated Circuit ◽  
High Speed ◽  
Room Temperature ◽  
Strain Relaxation ◽  
Bipolar Transistors ◽  
Sige Hbt ◽  
Integrated Circuit Manufacturing ◽  
Microstructural Behavior

SiGe is being extensively investigated for use in heterojunction bipolar-transistors (HBT) and high-speed integrated circuits. The material offers adjustable bandgaps, improved carrier mobilities over Si homostructures, and compatibility with Si-based integrated-circuit manufacturing. SiGe HBT performance can be improved by increasing the base-doping or by widening the base link-region by ion implantation. A problem that arises however is that implantation can enhance strain-relaxation of SiGe/Si.Furthermore, once misfit or threading dislocations result, the defects can give rise to recombination-generation in depletion regions of semiconductor devices. It is of relevance therefore to study the damage and anneal behavior of implanted SiGe layers. The present study investigates the microstructural behavior of phosphorus implanted pseudomorphic metastable Si0.88Ge0.12 films on silicon, exposed to various anneals.Metastable pseudomorphic Si0.88Ge0.12 films were grown ~265 nm thick on a silicon wafer by molecular-beam epitaxy. Pieces of this wafer were then implanted at room temperature with 100 keV phosphorus ions to a dose of 1.5×1015 cm-2.

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