Comparison of Dislane and Tetraethyltin as Gaseous Dopants for Growth of n-GaAs and O-AlGaAs by MOMBE

1991 ◽  
Vol 240 ◽  
Author(s):  
P. Wisk ◽  
C. R. Abernathy ◽  
S. J. Pearton ◽  
F. Ren ◽  
T. Fullowan ◽  
...  
Keyword(s):  
Heterojunction Bipolar Transistors ◽  
Growth Temperature ◽  
Molecular Beam ◽  
Dopant Concentration ◽  
Bipolar Transistors ◽  
Growth Surface ◽  
Dopant Incorporation ◽  
Collector Junction ◽  
Metal Organic ◽  
Trimethylamine Alane

ABSTRACTWe have investigated the effect of growth temperature and V/III ratio on dopant incorporation from disilane (Si2H6) and tetraethyltin (TESn) over the temperature range 475°C-525°C during growth of GaAs by metal organic molecular beam epitaxy (MOMBE). Increasing V/III ratio produced only a slight decrease in the dopant concentration while increasing growth temperature resulted in slighdy higher dopant levels. Addition of Al and H to the growth surface via introduction of trimethylamine alane had no apparent effect on dopant incorporation. No significant differences were observed in the incorporation behaviors of Si2H6 and TESn, and both sources yielded comparable base-collector junction behavior when used for growth of heterojunction bipolar transistors (HBTs).

InGaP/GaAs Based Single and Double Heterojunction Bipolar Transistors Grown by MOMBE

1992 ◽  
Vol 282 ◽  
Author(s):  
F. Ren ◽  
C. R. Abernathy ◽  
S. J. Pearton ◽  
P. W. Wisk ◽  
R. Esagui
Keyword(s):  
Molecular Beam Epitaxy ◽  
Heterojunction Bipolar Transistors ◽  
Molecular Beam ◽  
Bipolar Transistors ◽  
Carbon Doped ◽  
Gas Source ◽  
High Injection ◽  
Heterojunction Devices ◽  
Double Heterojunction ◽  
Metal Organic

Carbon-doped base InGaP/GaAs single and double heterojunction bipolar transistors (HBTs) grown by gas-source Metal Organic Molecular Beam Epitaxy (MOMBE) are reported. Large are devices (emitter diameter 70 μm) exhibited gain of 25 for high injection levels at a base doping of 5 × 1019 cm−3. Ideality factors (<1.1)were obtained for both emitter-base and base-collector junctions in both single (SHBT) and double PHBT) heterojunction devices. Vceo's of 12 V and 19 V for SHBTs and DHBTs respectively were measured.

Growth of Heterojunction Bipolar Transistors by Metalorganic Molecular Beam Epitaxy

1993 ◽  
Vol 300 ◽  
Author(s):  
Cammy R. Abernathy
Keyword(s):  
Molecular Beam Epitaxy ◽  
Heterojunction Bipolar Transistors ◽  
High Performance ◽  
Molecular Beam ◽  
Bipolar Transistors ◽  
Lattice Matching ◽  
Background Impurity ◽  
Metalorganic Molecular Beam Epitaxy ◽  
P Type ◽  
Trimethylamine Alane

ABSTRACTHeterojunction bipolar transistors (HBTs) are becoming increasingly important for highspeed electronic applications. This paper will discuss how the unique growth chemistry of metalorganic molecular beam epitaxy (MOMBE) can be used to produce high performance HBTs. For example, it has been well documented that MOMBE's ability to grow heavily doped, well-confined layers of either n- or p-type is a significant advantage for this device. This feature arises primarily from the ability to use gaseous dopant sources in the absence of interfacial gas boundary layers. While this is an advantage for doping, it can be a disadvantage in other areas such as AlGaAs purity or InGaP lattice matching. This paper will discuss how these difficulties can be overcome through the use of novel Al or Ga precursors thus allowing deposition of high quality GaAs-based HBTs. By using trimethylamine alane (TMAA), background impurity concentrations can be reduced substantially. Further improvements in purity require cleaner Ga precursors or alternatively novel Ga substitutes. The resulting reduction in compensation allows for the use of lower dopant concentrations in the AlGaAs thus producing significant improvement in the leakage behavior of the base-emitter junction. Even further improvement can be achieved through the use of InGaP. Using novel Ga precursors, such as tri-isobutylgallium (TIBG), the problems associated with the sensitivity of composition to growth temperature are greatly reduced, allowing for the reproducible deposition of devices containing InGaP emitter layers.

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