Non-Equilibrium InSb/InAISb Diodes Grown by MBE

1997 ◽  
Vol 484 ◽  
Author(s):  
A D Johnson ◽  
A B J Smout ◽  
J W Cairns ◽  
G J Pryce ◽  
A J Pidduck ◽  
...  
Keyword(s):  
Room Temperature ◽  
Molecular Beam ◽  
Device Performance ◽  
Leakage Currents ◽  
Lower Growth ◽  
Dopant Activation ◽  
Atomic Force ◽  
Temperature Window ◽  
Lower Growth Temperature ◽  
Non Equilibrium

AbstractThe application of non-equilibrium transport techniques to Molecular Beam Epitaxy (MBE) grown InSb/InAlSb heterostructure diodes has produced practical devices such as midinfrared LED's and negative luminescent sources that operate at room temperature. By extending the epitaxial growth to vicinal InSb substrates it has been demonstrated that the temperature window for high quality epitaxy can be lowered by ∼12°C, giving greatly improved epilayer morphology. The degree of misorientation needed for given growth temperatures is shown from Atomic Force Microscope (AFM) measurements to be only ∼2°. In addition, the lower growth temperature gives improved dopant activation, lower trap densities and lower reverse bias leakage currents, with consequent benefits to device performance.

HETERO-GROWTH OF (100) ORIENTATED ZNO FILMS ON SILICON BY SS-CVD

2002 ◽  
Vol 16 (28n29) ◽  
pp. 4250-4254 ◽  
Author(s):  
JIAN-GUO LU ◽  
ZHI-ZHEN YE ◽  
HAN-HONG CHEN ◽  
JING-YUN HUANG ◽  
BING-HUI ZHAO
Keyword(s):  
Texture Coefficient ◽  
Zinc Acetate Dihydrate ◽  
Chemical Vapor ◽  
Zno Films ◽  
X Ray Diffraction ◽  
Lower Growth ◽  
Force Microscopy ◽  
Atomic Force ◽  
First Time ◽  
Lower Growth Temperature

ZnO films with (100) preferred orientation are reported for the first time. ZnO films were synthesized on Si(100) substrate by solid-source chemical vapor deposition (SS-CVD) using zinc acetate dihydrate (solid) as a precursor. The structural properties were investigated by X-ray diffraction and atomic force microscopy. Results show that a lower growth temperature and a higher deposition rate will facilitate the formation of (100) texture. The texture coefficient for (100) plane is 3.28.

The Incorporation and Behavior of Oxygen in AlGaAs Grown by Mombe Using Trimethylamine Alane

1990 ◽  
Vol 204 ◽  
Author(s):  
C. R. Abernathy ◽  
J. Song ◽  
W. S. Hobson ◽  
S. J. Pearton ◽  
F. Ren ◽  
...  
Keyword(s):  
High Speed ◽  
Room Temperature ◽  
Molecular Beam ◽  
Heterojunction Bipolar Transistor ◽  
Dopant Activation ◽  
Residual Oxygen ◽  
Oxygen Contamination ◽  
Metal Organic ◽  
And Behavior ◽  
Trimethylamine Alane

ABSTRACTTrimethylamine alane (TMAAl) has been demonstrated to be a superior Al precursor for growth of AIGaAs by metal-organic molecular beam (MOMBE). TMAA1 reduces both carbon and oxygen contamination relative to the standard Al source, triethylaluminum (TEA1). However, AlGaAs grown with TMAAl still shows a residual oxygen background of ∼2 × 1018 cm−3 when used with triethylgallium (TEGa) and either As4 or ASH3. This background is independent of Al mole fraction and is due primarily to alkoxides in the TEGa. AIGaAs grown with TMAAl and elemental Ga contains oxygen at levels commonly obtained in MBE, −2 × 1017 cm-3. While an oxygen level of −2 × 1018 cm-3 is not desirable, we have found that most of this impurity is electrically inactive as evidenced by room temperature photoluminescence and n-type dopant activation. In light of this, we have assessed the applicability of AlGaAs grown with TMAAl to the fabrication of high-speed GaAs/AIGaAs devices. The source is found to be suitable for structures like the heterojunction bipolar transistor.

Device Characteristics of Ultra-shallow Junctions Formed by fRTP Annealing

2004 ◽  
Vol 810 ◽  
Author(s):  
A. Satta ◽  
R. Lindsay ◽  
S. Severi ◽  
K. Henson ◽  
K. Maex ◽  
...  
Keyword(s):  
Thermal Processing ◽  
Wafer Surface ◽  
Process Conditions ◽  
Device Performance ◽  
Correct Process ◽  
Leakage Currents ◽  
Dopant Activation ◽  
Junction Formation ◽  
Ultra Shallow Junctions ◽  
Limited Diffusion

ABSTRACTThe creation of ultra-shallow junction for CMOS devices at the sub-100 nm node is driving significant efforts in developing thermal processing to give rise to high dopant activation in combination with limited diffusion. Flash-assist Rapid Thermal Annealing™ (fRTP™) is a promising new annealing technique, which involves the heating of the bulk of the wafer to an intermediate temperature using rather conventional spike RTP, followed by a short and intense pulse of light localized on the implanted wafer surface.In this work, we have systematically investigated the junction formation of different implants under fRTP anneals in terms of profile and devices. Co-implanted Ge and F species provide more box-like profiles with improved activation. Although leakage currents are higher for fRTP-annealed junctions than for spike-annealed junctions, appropriate fRTP process parameters and correct process conditions provide a critical tool to control and reduce the leakage current of co-implanted fRTP junctions to acceptable levels. Proper implant and anneal are requested for minimizing pattern effect and improving device performance.

Photoluminescence Enhancement and Morphological Properties of Carbon Codoped GaN:Er

1999 ◽  
Vol 595 ◽  
Author(s):  
M.E Overberg ◽  
C.R. Abernathy ◽  
S. J. Pearton ◽  
R. G. Wilson ◽  
J. M. Zavada
Keyword(s):  
Room Temperature ◽  
Molecular Beam ◽  
Film Surface ◽  
Solubility Limit ◽  
Morphological Properties ◽  
Nonradiative Recombination ◽  
Force Microscopy ◽  
Gas Source ◽  
Atomic Force ◽  
Photoluminescence Enhancement

AbstractThe surface morphology and the room temperature 1.54 µm photoluminescence (PL) intensity from GaN:Er grown by gas source molecular beam epitaxy have been investigated as a function of C concentration as introduced by CBr4. Similar to previous results with increasing Er level, increasing the C concentration initially improved the surface smoothness as measured by atomic force microscopy (AFM) and scanning electron microscopy (SEM), with RMS roughness improving by a factor of seven over undoped GaN. The PL also improved dramatically. However, the highest amounts of C investigated produced a decrease in the PL as well as a roughening of the film surface. These effects indicate that the GaN:Er had reached its C solubility limit, producing an increased amount of defect induced nonradiative recombination.

scholarly journals Photoluminescence Enhancement and Morphological Properties of Carbon Codoped GaN:Er

2000 ◽  
Vol 5 (S1) ◽  
pp. 810-816
Author(s):  
M.E Overberg ◽  
C.R. Abernathy ◽  
S. J. Pearton ◽  
R. G. Wilson ◽  
J. M. Zavada
Keyword(s):  
Room Temperature ◽  
Molecular Beam ◽  
Film Surface ◽  
Solubility Limit ◽  
Morphological Properties ◽  
Nonradiative Recombination ◽  
Force Microscopy ◽  
Gas Source ◽  
Atomic Force ◽  
Photoluminescence Enhancement

The surface morphology and the room temperature 1.54 µm photoluminescence (PL) intensity from GaN:Er grown by gas source molecular beam epitaxy have been investigated as a function of C concentration as introduced by CBr4. Similar to previous results with increasing Er level, increasing the C concentration initially improved the surface smoothness as measured by atomic force microscopy (AFM) and scanning electron microscopy (SEM), with RMS roughness improving by a factor of seven over undoped GaN. The PL also improved dramatically. However, the highest amounts of C investigated produced a decrease in the PL as well as a roughening of the film surface. These effects indicate that the GaN:Er had reached its C solubility limit, producing an increased amount of defect induced nonradiative recombination.

Steady-State Versus Rapid Thermal Annealing of Phosphorusimplanted Pseudomorphic Si(100)/Ge0.12Si0.88

1994 ◽  
Vol 342 ◽  
Author(s):  
D. Y. C. Lie ◽  
J. H. Song ◽  
N. D. Theodore ◽  
F. Eisen ◽  
M.-A. Nicolet ◽  
...  
Keyword(s):  
Steady State ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Room Temperature ◽  
Molecular Beam ◽  
Strain Relaxation ◽  
Furnace Annealing ◽  
Dopant Activation ◽  
X Ray ◽  
Projected Range

ABSTRACTPseudomorphic Ge0.12Si0.88 films 265 nm thick grown by molecular beam epitaxy on p- Si(100) substrates were implanted with 100 keV 31P at room temperature for a dose of 5 x 1013/cm2. The projected range of the implanted P is about half the epilayer thickness. The implanted layers, together with non-implanted virgin samples, were subsequently annealed by both rapid thermal annealing in nitrogen and by steady-state furnace annealing in vacuum. The damage and strain of the annealed layers were studied by 4He channeling and x-ray doublecrystal diffraction. For a dose of 5 x 1013 P /cm2, both the damage and strain introduced by implantation can be completely removed, within instrumental sensitivity, by rapid thermal annealing at 700 °C for 10 - 40 s. Furnace annealing at 550 °C for 30 min for this sample removes most of the damage and strain induced by implantation. Furnace annealing at 700 °C or higher worsens the crystallinity of the layer and the strain relaxes. Hall measurements were performed on the same samples. Furnace annealing cannot achieve good dopant activation without introducing significant strain relaxation to the heterostructure, while rapid thermal annealing can.

Structural and Optical Properties of In0.27Ga0.73N/Si (111) Film Grown Using PA-MBE Technique

2012 ◽  
Vol 620 ◽  
pp. 368-372 ◽  
Author(s):  
Saleh H. Abud ◽  
Hassan Zainuriah ◽  
Fong Kwong Yam ◽  
Alaa J. Ghazai
Keyword(s):  
Optical Properties ◽  
Room Temperature ◽  
Molecular Beam ◽  
Grown Film ◽  
X Ray Diffraction ◽  
Structural And Optical Properties ◽  
X Ray ◽  
Force Microscopy ◽  
Room Temperature Photoluminescence ◽  
Atomic Force

In this paper, InGaN/GaN/AlN/Si (111) structure was grown using a plasma-assisted molecular beam epitaxy (PA-MBE) technique. The structural and optical properties of grown film have been characterized using scanning electron microscopy (SEM), atomic force microscopy (AFM), high resolution X-ray diffraction (HR-XRD) and photoluminescence (PL). Indium-mole fraction has been computed to be 0.27 using XRD data and Vegards law with high grain size and low tensile strain. Room-temperature photoluminescence revealed an intense peak at 534 nm (2.3 eV) related to our sample In0.27Ga0.73N.

Polarity dependence of In-rich InGaN and InN/InGaN MQWs

2005 ◽  
Vol 892 ◽  
Author(s):  
Songbek Che ◽  
Takuro Shinada ◽  
Tomoyasu Mizuno ◽  
Yoshihiro Ishitani ◽  
Akihiko Yoshikawa
Keyword(s):  
Surface Morphology ◽  
Quantum Wells ◽  
Optical Communication ◽  
Molecular Beam ◽  
Periodic Structures ◽  
Radio Frequency Plasma ◽  
High Quality ◽  
Lower Growth ◽  
Frequency Plasma ◽  
Lower Growth Temperature

AbstractIn-rich InGaN films (XIn>0.5) and InN/InGaN multi-quantum wells were grown on Ga- and N-polarity GaN templates by radio-frequency plasma-assisted molecular beam epitaxy. The In-polarity InGaN films grown at 450°C showed superior crystalline quality and smoother surface morphology compared to the N-polarity samples, which were grown at 500∼550°C. By using the In-polarity In0.7Ga0.3N as a barrier layer, the InN/InGaN multi-quantum wells were successfully fabricated on the III-element polarity GaN templates at 450°C. Fine periodic structures and strong photoluminescence emission around optical communication wavelength were obtained from the In-polarity MQWs. These results indicate that the In-polarity growth is preferred to obtain a high quality InGaN film and the InN/InGaN MQWs in spite of its lower growth temperature.

Dopant Activation And Epitaxial Regrowth in P-Implanted Pseudomorphic Ge0.12Si0.88 Layers on Si (100)

1993 ◽  
Vol 321 ◽  
Author(s):  
D. Y. C. Lie ◽  
T. K. Cams ◽  
N. D. Theodore ◽  
F. Eisen ◽  
M.-A. Nicolet ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Film Thickness ◽  
Electron Mobility ◽  
Room Temperature ◽  
Molecular Beam ◽  
Solid Phase ◽  
Dopant Activation ◽  
Projected Range ◽  
Epitaxial Regrowth ◽  
Virgin Sample

AbstractA pseudomorphic Ge0.12Si0.88 film 265 nm thick grown on a Si (100) substrate by molecular beam epitaxy was implanted at room temperature with a dose of 1.5 × 1015 cm2 of 100 keV P ions. The projected range of the ions is about 125 nm, which is well within the film thickness. Only the top portion of the Ge0.12Si0.88 layer was amorphized by the implantation. Both implanted and non-implanted samples were subsequently annealed in vacuum for 30 Minutes from 400 °C to 800 °C. Values of electron Hall sheet mobility and concentration in the implanted Ge0.12Si0.88 epilayer were measured after annealing. The solid phase epitaxial regrowth is complete at 550 °C, where the implanted phosphorus reaches - 100 % activation. The regrown Ge0.12Si0.88 layer exhibits inferior crystalline quality to that of the virgin sample and is relaxed, but the non-implanted portion of the film remains pseudomorphic at 550 °C. When annealed at 800 °C, the strain in the whole epilayer relaxes. The sheet electron mobility values measured at room temperature in the regrown samples (Tann ≥ 550 °C) are about 20% less than those of pure Si.

SiGeC Cantilever Micro Cooler

2003 ◽  
Vol 793 ◽  
Author(s):  
Gehong Zeng ◽  
Ali Shakouri ◽  
Edward Croke ◽  
Yan Zhang ◽  
James Christofferson ◽  
...  
Keyword(s):  
Integrated Circuit ◽  
Room Temperature ◽  
Molecular Beam ◽  
Silicon On Insulator ◽  
Device Performance ◽  
Deep Reactive Ion Etching ◽  
Temperature Modeling ◽  
Cantilever Structure ◽  
Lattice Matched

ABSTRACTThe fabrication and characterization of SiGeC cantilever microcoolers are described. Silicon on insulator (SOI) was used as the substrate, and two layers of 3 μm p-SiGe0.07C0.0075 and 1.14 μm n-SiGe0.07C0.0075 lattice matched to silicon were grown using molecular beam epitaxy. The uni couple cooler was fabricated using conventional integrated circuit (IC) processing, and the cantilever structure was finally formed by removing the backside Si of SOI substrate by deep reactive ion etching. Devices with different n- and p-side length ratios were characterized. Cooling by 1.2K has been measured at room temperature. Modeling showed that the device performance was dominated by the smaller cooling temperature of the p-SiGeC leg of the cantilever structure. Parasitic heat conduction through the Si buffer layer is the main limitation to the device performance.

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