Mechanical Polishing to Submicron Thickness for Extensive Thin Area in Heterogeneous Samples

1990 ◽  
Vol 199 ◽  
Author(s):  
David F. Dawson-Elli ◽  
Marek A. Turowski ◽  
Thomas F. Kelly ◽  
Yeon-Wook Kim ◽  
Nuri A. Zreiba ◽  
...  
Keyword(s):  
Cross Section ◽  
Ion Milling ◽  
Mechanical Grinding ◽  
Sampling Area ◽  
Heterogeneous Samples ◽  
Starting Point ◽  
Ultra Precision ◽  
Electroplated Copper ◽  
Short Time ◽  
Rapidly Solidified

ABSTRACTIon-milling-based sample preparation has the advantage that thin area can be obtained from almost any material. It has the disadvantage, however, that the amount of thin area can often be quite limited. This poses a problem when a large sampling area is needed from materials which must be thinned by ion milling. Cross-sectioned samples and grossly heterogeneous materials are two examples where this problem may be encountered. The group at IBM in East Fishkill have developed methods for mechanical grinding and polishing of TEM samples down to about I micron thickness. They use this as a starting point for final thinning by ion milling. This approach produces a large uniform thin area in a short time in the ion mill. We have built jigs that allow us to make these mechanically-thinned samples. We have also made flat-bottomed dimples using ultra-precision dimple grinders to achieve similar results. Both of these approaches are described. Examples are taken from cross-section samples of thin films on silicon, from steels with large carbides, and from rapidly solidified metal spheres embedded in electroplated copper.

Preparation of Large Thin Area Vlsi Tem Specimens by Dimpling With A “Flatting Tool”

1991 ◽  
Vol 254 ◽  
Author(s):  
Helen L. Humiston ◽  
Bryan M. Tracy ◽  
M. Lawrence ◽  
A. Dass
Keyword(s):  
Cross Section ◽  
Milling Time ◽  
Specimen Preparation ◽  
Preparation Technique ◽  
Ion Milling ◽  
Sampling Area ◽  
Preparation Methods

AbstractAn alternative VLSI TEM specimen preparation technique has been developed to produce 100μm diameter electron transparent thin area by using a conventional dimpler with a texmet padded ‘flatting tool’ for dimpling and a microcloth padded ‘flatting tool’ for polishing, followed by low angle ion milling. The advantages of this technique are a large sampling area and shorter milling times than conventional specimen preparation methods. In the following, we report the details of the modified dimpling technique. The improvements in available electron transparency, and a decrease in ion milling time are demonstrated with the preparation of planar and cross section VLSI device samples.

HREM observation of dislocations near room temperature fractures in silicon

1988 ◽  
Vol 46 ◽  
pp. 892-893
Author(s):  
M. H. Rhee ◽  
W. A. Coghlan
Keyword(s):  
Cross Section ◽  
Room Temperature ◽  
Single Crystal Silicon ◽  
Dislocation Nucleation ◽  
Back Side ◽  
Ion Milling ◽  
Crystal Silicon ◽  
Flat Surfaces ◽  
Induced Fractures ◽  
Vicker’S Microhardness

Silicon is believed to be an almost perfectly brittle material with cleavage occurring on {111} planes. In such a material at room temperature cleavage is expected to occur prior to any dislocation nucleation. This behavior suggests that cleavage fracture may be used to produce usable flat surfaces. Attempts to show this have failed. Such fractures produced in semiconductor silicon tend to occur on planes of variable orientation resulting in surfaces with a poor surface finish. In order to learn more about the mechanisms involved in fracture of silicon we began a HREM study of hardness indent induced fractures in thin samples of oxidized silicon.Samples of single crystal silicon were oxidized in air for 100 hours at 1000°C. Two pieces of this material were glued together and 500 μm thick cross-section samples were cut from the combined piece. The cross-section samples were indented using a Vicker's microhardness tester to produce cracks. The cracks in the samples were preserved by thinning from the back side using a combination of mechanical grinding and ion milling.

Microstructural Variations in Melt-Spun Rapidly Solidified Ribbons

1985 ◽  
Vol 43 ◽  
pp. 54-55
Author(s):  
L. A. Bendersky ◽  
W. J. Boettinger
Keyword(s):  
Solid State ◽  
Processing Parameters ◽  
Heat Extraction ◽  
Solid State Reactions ◽  
Careful Examination ◽  
Ion Milling ◽  
Melt Spun ◽  
Wheel Side ◽  
Rapidly Solidified ◽  
Heat Extraction Rate

Rapid solidification produces a wide variety of sub-micron scale microstructure. Generally, the microstructure depends on the imposed melt undercooling and heat extraction rate. The microstructure can vary strongly not only due to processing parameters changes but also during the process itself, as a result of recalescence. Hence, careful examination of different locations in rapidly solidified products should be performed. Additionally, post-solidification solid-state reactions can alter the microstructure.The objective of the present work is to demonstrate the strong microstructural changes in different regions of melt-spun ribbon for three different alloys. The locations of the analyzed structures were near the wheel side (W) and near the center (C) of the ribbons. The TEM specimens were prepared by selective electropolishing or ion milling.

A technique for preparing semiconductor cross sections for both TEM and SEM analysis

1989 ◽  
Vol 47 ◽  
pp. 712-713
Author(s):  
Stanley J. Klepeis ◽  
J.P. Benedict ◽  
R.M Anderson
Keyword(s):  
Sample Preparation ◽  
Cross Section ◽  
Cross Sections ◽  
Sem Analysis ◽  
Preparation Technique ◽  
Ion Milling ◽  
Tem Analysis ◽  
Polished Cross Section ◽  
Area Of Interest ◽  
Polished Side

The ability to prepare a cross-section of a specific semiconductor structure for both SEM and TEM analysis is vital in characterizing the smaller, more complex devices that are now being designed and manufactured. In the past, a unique sample was prepared for either SEM or TEM analysis of a structure. In choosing to do SEM, valuable and unique information was lost to TEM analysis. An alternative, the SEM examination of thinned TEM samples, was frequently made difficult by topographical artifacts introduced by mechanical polishing and lengthy ion-milling. Thus, the need to produce a TEM sample from a unique,cross-sectioned SEM sample has produced this sample preparation technique.The technique is divided into an SEM and a TEM sample preparation phase. The first four steps in the SEM phase: bulk reduction, cleaning, gluing and trimming produces a reinforced sample with the area of interest in the center of the sample. This sample is then mounted on a special SEM stud. The stud is inserted into an L-shaped holder and this holder is attached to the Klepeis polisher (see figs. 1 and 2). An SEM cross-section of the sample is then prepared by mechanically polishing the sample to the area of interest using the Klepeis polisher. The polished cross-section is cleaned and the SEM stud with the attached sample, is removed from the L-shaped holder. The stud is then inserted into the ion-miller and the sample is briefly milled (less than 2 minutes) on the polished side. The sample on the stud may then be carbon coated and placed in the SEM for analysis.

Microstructure of mechanically alloyed and hot-pressed Al5CuZr2

1990 ◽  
Vol 48 (4) ◽  
pp. 970-971
Author(s):  
T. E. Mitchell ◽  
P. B. Desch ◽  
R. B. Schwarz
Keyword(s):  
Mechanical Alloying ◽  
Vickers Hardness ◽  
Hot Pressing ◽  
Rapid Quenching ◽  
Hardened Steel ◽  
Alloyed Powder ◽  
Ion Milling ◽  
Mechanical Grinding ◽  
Mechanically Alloyed ◽  
Steel Container

Al3Zr has the highest melting temperature (1580°C) among the tri-aluminide intermetal1ics. When prepared by casting, Al3Zr forms in the tetragonal DO23 structure but by rapid quenching or by mechanical alloying (MA) it can also be prepared in the metastable cubic L12 structure. The L12 structure can be stabilized to at least 1300°C by the addition of copper and other elements. We report a TEM study of the microstructure of bulk Al5CuZr2 prepared by hot pressing mechanically alloyed powder.MA was performed in a Spex 800 mixer using a hardened steel container and balls and adding hexane as a surfactant. Between 1.4 and 2.4 wt.% of the hexane decomposed during MA and was incorporated into the alloy. The mechanically alloyed powders were degassed in vacuum at 900°C. They were compacted in a ram press at 900°C into fully dense samples having Vickers hardness of 1025. TEM specimens were prepared by mechanical grinding followed by ion milling at 120 K. TEM was performed on a Philips CM30 at 300kV.

The Preparation of Submicron Precision Cross Sections by Dimpling With A ‘Flatting Tool’

1997 ◽  
Vol 480 ◽  
Author(s):  
Helen L. Humiston
Keyword(s):  
Cross Section ◽  
Cross Sections ◽  
Microstructural Analysis ◽  
Complex Materials ◽  
Ion Milling ◽  
Step Procedure ◽  
Simple Step ◽  
Primary Advantage ◽  
Preparation Techniques ◽  
Support Grid

AbstractThe complex materials systems in VLSI devices require specialized preparation techniques for TEM microstructural analysis. For this purpose, it is desirable to obtain electron transparency in all material layers from the oxides used in dielectrics to refractory metals such as tungsten. The primary advantage of dimpling these materials is that ideal specimens are obtained for low angle ion milling. By dimpling both sides of the cross section with a padded flatting tool, a thicker specimen of 130μm at the outer rim of the 3mm disc is produced that narrows to the 125nm thickness fringes in the center. These samples do not require a copper support grid, thereby allowing for a lower milling angle of 2.5 degrees on both sides of the specimen. This technique provides a cross section that is electron transparent in all layers without the loss of oxides due to differential thinning rates of various materials at higher milling angles.It is generally thought that precision thinning through a submicron feature is not possible on the dimpler. However, a simple step-by-step procedure for this technique will be demonstrated and discussed.

A Grinding/Polishing Tool for TEM Sample Preparation

1987 ◽  
Vol 115 ◽  
Author(s):  
S. J. Klepeis ◽  
J. P. Benedict ◽  
R. M. Anderson
Keyword(s):  
Sample Preparation ◽  
Cross Section ◽  
Ion Milling ◽  
Silicon Devices ◽  
Time Required ◽  
Polishing Tool ◽  
Rough Cut

ABSTRACTA grinding/polishing tool has been developed for preparing TEM samples. The hand-held tool is 2.50″ in diameter and 3.0″ high. Rough-cut samples, 300 to 600 microns thick, are routinely polished to 5 microns thick in four to six hours using this tool. As these 5 micron samples are so thin and uniform, a separate dimpling operation can be eliminated. Likewise, the time required to ion-mill the sample can be reduced to 0.5 to 2.0 hours – greatly reducing ion-milling artifacts and significantly increasing the area viewable by TEM. The process is equally effective for all classes of samples: Silicon devices, ceramics or metals – in either cross-section or planar views.

scholarly journals Keanekaragaman Jenis Ikan di Sepanjang Sungai Boyong – Code Propinsi Daerah Istimewa Yogyakarta

2016 ◽  
Vol 1 (1) ◽  
pp. 21 ◽  
Author(s):  
Tri Trijoko ◽  
Donan Satria Yudha ◽  
Rury Eprilurahman ◽  
Setiawan Silva Pambudi
Keyword(s):  
Fish Fauna ◽  
Native Fish ◽  
Fish Diversity ◽  
Sampling Area ◽  
Anabas Testudineus ◽  
Merapi Volcano ◽  
Starting Point ◽  
Introduced Fishes ◽  
Middle Stream ◽  
Channa Striata

The diversity of freshwater fishes which inhabit in the river of Daerah Istimewa Yogyakarta is not yet well documented. Complete documentation is needed as starting point and continuous research on the fish diversity in DIY. Boyong-Code River flows across the DIY, and it upstream is located on the hillside of Merapi volcano. The Code River upstream is called Boyong River. The research was aimed to acquire data about the diversity of fish fauna along the Boyong-Code River in the DIY. Further, the research purpose is to know which species are rare, potential for aquaculture, and introductive. Samples are taken along the Boyong-Code River starting from upstream to downstream. Samples were collected using Purposive Random Sampling methods with fishnets. Sampling area generally divided into three location i.e., upstream, middle-stream and downstream. Species diversity of fish in the Boyong-Code River is consisted of 24 species, with 5 introductive species. There are eleven native fish species which are potential for cultivation (aquaculture), i.e.: Barbodes binotatus, Mystacoleucus obtusirostris, Rasbora lateristriata, Rasbora argyrotaenia, Barbonymus balleroides, Osteochilus vittatus, Hampala macrolepidota, Anabas testudineus, Channa striata, Clarias leiacanthus and Clarias batrachus. The Boyong-Code River is a decent habitat for fishes. Many introduced fishes starting to invade the Boyong-Code River intentionally or unintentionally by human

scholarly journals On the self-induction of electric currents in a thin anchor-ring

1912 ◽  
Vol 86 (590) ◽  
pp. 562-571 ◽  
Keyword(s):  
Cross Section ◽  
Circular Cross Section ◽  
The Self ◽  
Electric Currents ◽  
Fourth Term ◽  
Starting Point ◽  
Axis Of Symmetry ◽  
The Difference ◽  
Circular Axis ◽  
Mutual Induction

In their useful compendium of "Formulæ and Tables for the Calculation of Mutual and Self-Inductance," Rosa And Cohen remark upon a small discrepancy in the formulæ given by myself and by M. Wien for the self-induction of a coil of circular cross-section over which the current is uniformly distributed . With omission of n , representative of the number of windings, my formula was L = 4 πa [ log 8 a / ρ - 7/4 + ρ 2 /8 a 2 (log 8 a / ρ + 1/3) ], (1) where ρ is the radius of the section and a that of the circular axis. The first two terms were given long before by Kirchhoff. In place of the fourth term within the bracket, viz., +1/24 ρ 2 / a 2 , Wien found -·0083 ρ 2 / a 2 . In either case a correction would be necessary in practice to take account of the space occupied by the insulation. Without, so far as I see, giving a reason, Rosa and Cohen express a preference for Wien's number. The difference is of no great importance, but I have thought it worth while to repeat the calculation and I obtain the same result as in 1881. A confirmation after 30 years, and without reference to notes, is perhaps almost as good as if it were independent. I propose to exhibit the main steps of the calculation and to make extension to some related problems. The starting point is the expression given by Maxwell for the mutual induction M between two neighbouring co-axial circuits. For the present purpose this requires transformation, so as to express the inductance in terms of the situation of the elementary circuits relatively to the circular axis. In the figure, O is the centre of the circular axis, A the centre of a section B through the axis of symmetry, and the position of any point P of the section is given by polar co-ordinates relatively to A, viz.

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