The Preparation of Submicron Precision Cross Sections by Dimpling With A ‘Flatting Tool’

1997 ◽  
Vol 480 ◽  
Author(s):  
Helen L. Humiston
Keyword(s):  
Cross Section ◽  
Cross Sections ◽  
Microstructural Analysis ◽  
Complex Materials ◽  
Ion Milling ◽  
Step Procedure ◽  
Simple Step ◽  
Primary Advantage ◽  
Preparation Techniques ◽  
Support Grid

AbstractThe complex materials systems in VLSI devices require specialized preparation techniques for TEM microstructural analysis. For this purpose, it is desirable to obtain electron transparency in all material layers from the oxides used in dielectrics to refractory metals such as tungsten. The primary advantage of dimpling these materials is that ideal specimens are obtained for low angle ion milling. By dimpling both sides of the cross section with a padded flatting tool, a thicker specimen of 130μm at the outer rim of the 3mm disc is produced that narrows to the 125nm thickness fringes in the center. These samples do not require a copper support grid, thereby allowing for a lower milling angle of 2.5 degrees on both sides of the specimen. This technique provides a cross section that is electron transparent in all layers without the loss of oxides due to differential thinning rates of various materials at higher milling angles.It is generally thought that precision thinning through a submicron feature is not possible on the dimpler. However, a simple step-by-step procedure for this technique will be demonstrated and discussed.

A technique for preparing semiconductor cross sections for both TEM and SEM analysis

1989 ◽  
Vol 47 ◽  
pp. 712-713
Author(s):  
Stanley J. Klepeis ◽  
J.P. Benedict ◽  
R.M Anderson
Keyword(s):  
Sample Preparation ◽  
Cross Section ◽  
Cross Sections ◽  
Sem Analysis ◽  
Preparation Technique ◽  
Ion Milling ◽  
Tem Analysis ◽  
Polished Cross Section ◽  
Area Of Interest ◽  
Polished Side

The ability to prepare a cross-section of a specific semiconductor structure for both SEM and TEM analysis is vital in characterizing the smaller, more complex devices that are now being designed and manufactured. In the past, a unique sample was prepared for either SEM or TEM analysis of a structure. In choosing to do SEM, valuable and unique information was lost to TEM analysis. An alternative, the SEM examination of thinned TEM samples, was frequently made difficult by topographical artifacts introduced by mechanical polishing and lengthy ion-milling. Thus, the need to produce a TEM sample from a unique,cross-sectioned SEM sample has produced this sample preparation technique.The technique is divided into an SEM and a TEM sample preparation phase. The first four steps in the SEM phase: bulk reduction, cleaning, gluing and trimming produces a reinforced sample with the area of interest in the center of the sample. This sample is then mounted on a special SEM stud. The stud is inserted into an L-shaped holder and this holder is attached to the Klepeis polisher (see figs. 1 and 2). An SEM cross-section of the sample is then prepared by mechanically polishing the sample to the area of interest using the Klepeis polisher. The polished cross-section is cleaned and the SEM stud with the attached sample, is removed from the L-shaped holder. The stud is then inserted into the ion-miller and the sample is briefly milled (less than 2 minutes) on the polished side. The sample on the stud may then be carbon coated and placed in the SEM for analysis.

scholarly journals Ion milling: the perfect cross-section of a painted textile

2019 ◽  
Vol 7 (1) ◽  
Author(s):  
M. J. Smith ◽  
T. Schmidt ◽  
K. Thompson ◽  
M. Dixon
Keyword(s):  
Cross Section ◽  
Cross Sections ◽  
Sample Surface ◽  
Paint Layer ◽  
Spectroscopic Techniques ◽  
Ion Milling ◽  
Sem Images ◽  
Materials Analysis ◽  
Historical Objects ◽  
Painting Layer

Abstract The successful study and conservation of historical objects is greatly enhanced by accurate materials analysis. Here embedded cross-sections from a processional marching banner were viewed by scanning electron microscopy (SEM) pre and post ion milling The application of ion-milling to the resin embedded cross-sections of the painted textile improved the sample surface resulting in greatly enhanced SEM images by producing clear distinctions between layers. It also enabled clear images which show the areas where ingress of the ground paint layer had seeped into the textile support in some areas and not on others. This perhaps indicates deliberate differences in the preparation layer depending on the type of final painting layer or it could simply be due to a lack of accuracy in its application prior to painting. The analysis of cross-section samples from painted textiles often includes the textile itself making sample preparation more complex due to the possibility of fraying of the textile during sample polishing; the ion-milling technique prevented this from occurring. To enhance findings further analysis on these ion milled cross-section samples by the use of mapping spectroscopic techniques such as Fourier transform infrared spectroscopy (FTIR) and Raman would facilitate material identification of the layers.

Electron Irradiation Effects in Polyoxymethylene Crystals Grown Inside Trioxane Crystals

1971 ◽  
Vol 29 ◽  
pp. 78-79
Author(s):  
J. P. Colson ◽  
D. H. Reneker
Keyword(s):  
Cross Section ◽  
Cross Sections ◽  
Detailed Examination ◽  
The Other ◽  
Electron Micrograph ◽  
Irradiation Effects ◽  
Threefold Axis ◽  
Typical Sample ◽  
Polymer Crystals ◽  
Chain Axis

Polyoxymethylene (POM) crystals grow inside trioxane crystals which have been irradiated and heated to a temperature slightly below their melting point. Figure 1 shows a low magnification electron micrograph of a group of such POM crystals. Detailed examination at higher magnification showed that three distinct types of POM crystals grew in a typical sample. The three types of POM crystals were distinguished by the direction that the polymer chain axis in each crystal made with respect to the threefold axis of the trioxane crystal. These polyoxymethylene crystals were described previously.At low magnifications the three types of polymer crystals appeared as slender rods. One type had a hexagonal cross section and the other two types had rectangular cross sections, that is, they were ribbonlike.

A quantitative approach to inner shell losses

1978 ◽  
Vol 36 (1) ◽  
pp. 526-527 ◽  
Author(s):  
R.D. Leapman ◽  
P. Rez ◽  
D.F. Mayers
Keyword(s):  
Energy Transfer ◽  
Cross Section ◽  
Cross Sections ◽  
Accurate Determination ◽  
Background Intensity ◽  
Core Excitation ◽  
Quantitative Basis ◽  
Cross Section Differential ◽  
Bound Electrons

Microanalysis by EELS has been developing rapidly and though the general form of the spectrum is now understood there is a need to put the technique on a more quantitative basis (1,2). Certain aspects important for microanalysis include: (i) accurate determination of the partial cross sections, σx(α,ΔE) for core excitation when scattering lies inside collection angle a and energy range ΔE above the edge, (ii) behavior of the background intensity due to excitation of less strongly bound electrons, necessary for extrapolation beneath the signal of interest, (iii) departures from the simple hydrogenic K-edge seen in L and M losses, effecting σx and complicating microanalysis. Such problems might be approached empirically but here we describe how computation can elucidate the spectrum shape.The inelastic cross section differential with respect to energy transfer E and momentum transfer q for electrons of energy E0 and velocity v can be written as

Oxygen K near edge structures studied with multiple scattering calculations

1988 ◽  
Vol 46 ◽  
pp. 504-505
Author(s):  
Xudong Weng ◽  
Peter Rez
Keyword(s):  
Cross Section ◽  
Cross Sections ◽  
Partial Cross Section ◽  
Energy Window ◽  
Edge Structure ◽  
Fine Structures ◽  
Hydrogenic Model ◽  
Electron Energy Loss ◽  
Quantitative Chemical

In electron energy loss spectroscopy, quantitative chemical microanalysis is performed by comparison of the intensity under a specific inner shell edge with the corresponding partial cross section. There are two commonly used models for calculations of atomic partial cross sections, the hydrogenic model and the Hartree-Slater model. Partial cross sections could also be measured from standards of known compositions. These partial cross sections are complicated by variations in the edge shapes, such as the near edge structure (ELNES) and extended fine structures (ELEXFS). The role of these solid state effects in the partial cross sections, and the transferability of the partial cross sections from material to material, has yet to be fully explored. In this work, we consider the oxygen K edge in several oxides as oxygen is present in many materials. Since the energy window of interest is in the range of 20-100 eV, we limit ourselves to the near edge structures.

HREM observation of dislocations near room temperature fractures in silicon

1988 ◽  
Vol 46 ◽  
pp. 892-893
Author(s):  
M. H. Rhee ◽  
W. A. Coghlan
Keyword(s):  
Cross Section ◽  
Room Temperature ◽  
Single Crystal Silicon ◽  
Dislocation Nucleation ◽  
Back Side ◽  
Ion Milling ◽  
Crystal Silicon ◽  
Flat Surfaces ◽  
Induced Fractures ◽  
Vicker’S Microhardness

Silicon is believed to be an almost perfectly brittle material with cleavage occurring on {111} planes. In such a material at room temperature cleavage is expected to occur prior to any dislocation nucleation. This behavior suggests that cleavage fracture may be used to produce usable flat surfaces. Attempts to show this have failed. Such fractures produced in semiconductor silicon tend to occur on planes of variable orientation resulting in surfaces with a poor surface finish. In order to learn more about the mechanisms involved in fracture of silicon we began a HREM study of hardness indent induced fractures in thin samples of oxidized silicon.Samples of single crystal silicon were oxidized in air for 100 hours at 1000°C. Two pieces of this material were glued together and 500 μm thick cross-section samples were cut from the combined piece. The cross-section samples were indented using a Vicker's microhardness tester to produce cracks. The cracks in the samples were preserved by thinning from the back side using a combination of mechanical grinding and ion milling.

Absolute inner-shell cross section determination for EELS analysis

1988 ◽  
Vol 46 ◽  
pp. 534-535
Author(s):  
P.A. Crozier
Keyword(s):  
Cross Section ◽  
Cross Sections ◽  
Absolute Cross Section ◽  
Specimen Thickness ◽  
Mass Thickness ◽  
Scattering Cross ◽  
Before And After ◽  
Estimated Error ◽  
Scattering Cross Sections ◽  
Electron Microscopist

Absolute inelastic scattering cross sections or mean free paths are often used in EELS analysis for determining elemental concentrations and specimen thickness. In most instances, theoretical values must be used because there have been few attempts to determine experimental scattering cross sections from solids under the conditions of interest to electron microscopist. In addition to providing data for spectral quantitation, absolute cross section measurements yields useful information on many of the approximations which are frequently involved in EELS analysis procedures. In this paper, experimental cross sections are presented for some inner-shell edges of Al, Cu, Ag and Au.Uniform thin films of the previously mentioned materials were prepared by vacuum evaporation onto microscope cover slips. The cover slips were weighed before and after evaporation to determine the mass thickness of the films. The estimated error in this method of determining mass thickness was ±7 x 107g/cm2. The films were floated off in water and mounted on Cu grids.

Comparison of ultra high resolution immersion lens CFESEM and TEM for imaging of semiconductor devices

1990 ◽  
Vol 48 (4) ◽  
pp. 622-623
Author(s):  
Terrence Reilly ◽  
Al Pelillo ◽  
Barbara Miner
Keyword(s):  
High Resolution ◽  
Sample Preparation ◽  
Cross Sections ◽  
Semiconductor Devices ◽  
Ion Milling ◽  
Observation Area ◽  
Transmission Electron ◽  
Milling Machines ◽  
Resolution Imaging ◽  
Electron Microscopes

The use of transmission electron microscopes (TEM) has proven to be very valuable in the observation of semiconductor devices. The need for high resolution imaging becomes more important as the devices become smaller and more complex. However, the sample preparation for TEM observation of semiconductor devices have generally proven to be complex and time consuming. The use of ion milling machines usually require a certain degree of expertise and allow a very limited viewing area. Recently, the use of an ultra high resolution "immersion lens" cold cathode field emission scanning electron microscope (CFESEM) has proven to be very useful in the observation of semiconductor devices. Particularly at low accelerating voltages where compositional contrast is increased. The Hitachi S-900 has provided comparable resolution to a 300kV TEM on semiconductor cross sections. Using the CFESEM to supplement work currently being done with high voltage TEMs provides many advantages: sample preparation time is greatly reduced and the observation area has also been increased to 7mm. The larger viewing area provides the operator a much greater area to search for a particular feature of interest. More samples can be imaged on the CFESEM, leaving the TEM for analyses requiring diffraction work and/or detecting the nature of the crystallinity.

Experimental Studies Of Multilayer Glass Structures On Compression, Compression With Bending And Simple Bending

2019 ◽  
pp. 22-30
Keyword(s):  
Cross Section ◽  
Cross Sections ◽  
Applied Load ◽  
Experimental Studies ◽  
Strength Properties ◽  
Research Topic ◽  
Normative Values ◽  
Laminated Glass ◽  
The Cross ◽  
Experimental Values

The work of multilayer glass structures for central and eccentric compression and bending are considered. The substantiation of the chosen research topic is made. The description and features of laminated glass for the structures investigated, their characteristics are presented. The analysis of the results obtained when testing for compression, compression with bending, simple bending of models of columns, beams, samples of laminated glass was made. Overview of the types and nature of destruction of the models are presented, diagrams of material operation are constructed, average values of the resistance of the cross-sections of samples are obtained, the table of destructive loads is generated. The need for development of a set of rules and guidelines for the design of glass structures, including laminated glass, for bearing elements, as well as standards for testing, rules for assessing the strength, stiffness, crack resistance and methods for determining the strength of control samples is emphasized. It is established that the strength properties of glass depend on the type of applied load and vary widely, and significantly lower than the corresponding normative values of the strength of heat-strengthened glass. The effect of the connecting polymeric material and manufacturing technology of laminated glass on the strength of the structure is also shown. The experimental values of the elastic modulus are different in different directions of the cross section and in the direction perpendicular to the glass layers are two times less than along the glass layers.

Cross Section Analysis of Cu Filled TSVs Based on High Throughput Plasma-FIB Milling

2012 ◽  
Author(s):  
Frank Altmann ◽  
Jens Beyersdorfer ◽  
Jan Schischka ◽  
Michael Krause ◽  
German Franz ◽  
...  
Keyword(s):  
High Resolution ◽  
Cross Section ◽  
High Throughput ◽  
Cross Sections ◽  
Electron Backscatter Diffraction ◽  
Grain Structure ◽  
Electron Backscatter ◽  
Section Surface ◽  
Backscatter Diffraction ◽  
Section Analysis

Abstract In this paper the new Vion™ Plasma-FIB system, developed by FEI, is evaluated for cross sectioning of Cu filled Through Silicon Via (TSV) interconnects. The aim of the study presented in this paper is to evaluate and optimise different Plasma-FIB (P-FIB) milling strategies in terms of performance and cross section surface quality. The sufficient preservation of microstructures within cross sections is crucial for subsequent Electron Backscatter Diffraction (EBSD) grain structure analyses and a high resolution interface characterisation by TEM.

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