Characteristics of Mocvd-Grown AlGaAs/GaAs Sqw Lasers and GaAs Mesfetsfabrication on Si Substrate with SiO2-Back Coating

1990 ◽  
Vol 198 ◽  
Author(s):  
Takashi Egawa ◽  
Hitoshi Tada ◽  
Yasufumi Kobayashi ◽  
Shinji Nozaki ◽  
Tetsuo Soga ◽  
...  
Keyword(s):  
Electron Concentration ◽  
Thermal Cycle ◽  
Room Temperature ◽  
Threshold Current ◽  
Gaas Layer ◽  
Si Substrate ◽  
Thermal Cycle Annealing ◽  
Cw Operation ◽  
Lower Background ◽  
Undoped Gaas

ABSTRACTWe discuss room temperature CW operation of AlGaAs/GaAs SQW lasers and GaAs MESFETs with good pinch-off characteristic on SiO2 -back coated Si. The all-MOCVD-grown,SQW laser on Si with thermal-cycle annealing, which has the EPD of 1.5 × 107 cm−2, has the threshold current as low as 55 mA (1.41 kA/cm2) under CW operation at room temperature. The pinch-off and the sidegating effect characteristics of GaAs MESFETs on Si have been improved by using SiO2-back coating of Si and higher growth temperature. The maximum transconductance of 160 mS/mm has been obtained for the MESFET with a 2.5 × 15 µm gate. The main origin of sidegating effect associates with the channel layer-undoped GaAs layer beneath it interface. The SiO2 -back coating is found effective to obtain a lower background electron concentration in undoped GaAs layer and to control doping of the active layer in GaAs/Si.

Room-Temperature CW Operation of SQW Lasers on Si Grown with AiGaAs/AlGaP Intermediate Layers by MoCVD

1991 ◽  
Vol 228 ◽  
Author(s):  
T. Egawa ◽  
Y. Hayashi ◽  
T. George ◽  
T. Soga ◽  
T. Jimbo ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Room Temperature ◽  
Threshold Current ◽  
Threshold Current Density ◽  
Si Substrate ◽  
Si Substrates ◽  
Grown Sample ◽  
Cw Operation ◽  
Intermediate Layers ◽  
Dimensional Growth

ABSTRACTThe heterointerfaces of single quantum wells (SQWs) and the characteristics of SQW lasers on Si substrates grown with Al0.5 Ga0 5As/Al0.55Ga0.45P intermediate layers (AlGaAs/AlGaP ILs) entirely by MOCVD are reported. The surface morphology and the heterointerfaces of SQWs grown on Si substrates with the AlGaAs/AlGaP ILs are smoother than those of the two-step-grown sample. The two-dimensional growth of the AlGaAs/AlGaP ILs on a Si substrate contributes to obtain the smooth heterointerface. The excellent lasing characteristics are obtained by the AlGaAs/AlGaP ILs, which are caused by the smooth heterointerfaces. The lasers grown with the AlGaAs/AlGaP ILs show the averaged threshold current density of 1.83 kA/cm2 and the averaged differential quantum efficiency of 51.9 % under cw condition at room temperature.

Undoped GaAs with a Low Electron Concentration Grown on Si by Mocvd

1990 ◽  
Vol 198 ◽  
Author(s):  
Shinji Nozaki ◽  
A. T. Wu ◽  
J. J. Murray ◽  
T. George ◽  
M. Umeno
Keyword(s):  
Electron Concentration ◽  
Gaas Layer ◽  
High Resistivity ◽  
Si Substrate ◽  
Mocvd Reactor ◽  
Mocvd Growth ◽  
Step Growth ◽  
Gas Phase Transport ◽  
Phase Transport ◽  
Undoped Gaas

ABSTRACTWe have successfully grown undoped GaAs of very high resistivity on Si by MOCVD. The back and side edges of the Si substrate were coated with a Si3N4/SiO2 stacked layer to suppress Si incorporation Into GaAs by the gas phase transport mechanism during MOCVD growth. A 3- μm-thick GaAs layer was grown on this Si substrate at 750 °C in an atmospheric MOCVD reactor using the two-step growth technique. The electron concentration measured by a Polaron C-V profiler is 3xl0l4 cm−3, as low as that of GaAs grown on GaAs substrate, up to the depth of 1.5 μm from the surface.

scholarly journals Room Temperature CW Operation of GaN-based Blue Laser Diodes by GaInN/GaN optical guiding layers

2000 ◽  
Vol 5 (S1) ◽  
pp. 1-7 ◽  
Author(s):  
Masayoshi Koike ◽  
Shiro Yamasaki ◽  
Yuta Tezen ◽  
Seiji Nagai ◽  
Sho Iwayama ◽  
...  
Keyword(s):  
Room Temperature ◽  
Continuous Wave ◽  
Laser Diodes ◽  
Threshold Current ◽  
Crystal Defects ◽  
Blue Laser ◽  
Buffer Layers ◽  
Continuous Wave Laser ◽  
Cw Operation ◽  
First Time

GaN-based short wavelength laser diodes are the most promising key device for a digital versatile disk. We have been improving the important points of the laser diodes in terms of optical guiding layers, mirror facets. The continuous wave laser irradiation at room temperature could be achieved successfully by reducing the threshold current to 60 mA (4 kA/cm2). We have tried to apply the multi low temperature buffer layers to the laser diodes for the first time to reduce the crystal defects.

Stable CW operation of a MQW laser emitting at 1.54 mu m on a Si substrate at room temperature

1991 ◽  
Vol 38 (12) ◽  
pp. 2692
Author(s):  
M. Sugo ◽  
H. Mori ◽  
Y. Itoh ◽  
Y. Sakai ◽  
M. Tachikawa
Keyword(s):  
Room Temperature ◽  
Si Substrate ◽  
Cw Operation

Room Temperature CW Operation of GaN-Based Blue Laser Diodes by GaInN/GaN Optical Guiding Layers

1999 ◽  
Vol 595 ◽  
Author(s):  
Masayoshi Koike ◽  
Shiro Yamasaki ◽  
Yuta Tezen ◽  
Seiji Nagai ◽  
Sho Iwayama ◽  
...  
Keyword(s):  
Room Temperature ◽  
Continuous Wave ◽  
Laser Diodes ◽  
Threshold Current ◽  
Crystal Defects ◽  
Blue Laser ◽  
Buffer Layers ◽  
Continuous Wave Laser ◽  
Cw Operation ◽  
First Time

AbstractGaN-based short wavelength laser diodes are the most promising key device for a digital versatile disk. We have been improving the important points of the laser diodes in terms of optical guiding layers, mirror facets. The continuous wave laser irradiation at room temperature could be achieved successfully by reducing the threshold current to 60 mA (4 kA/cm2). We have tried to apply the multi low temperature buffer layers to the laser diodes for the first time to reduce the crystal defects.

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