MBE-grown 1.3 micron InGaAsN/GaAs double QW VCSELs with very low-threshold current density under room temperature CW operation
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1995 ◽
Vol 7
(3)
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pp. 241-243
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2014 ◽
Vol 31
(5)
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pp. 054204
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2000 ◽
Vol 12
(3)
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pp. 227-229
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1985 ◽
Vol 21
(6)
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pp. 646-649
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