Stable CW operation of a MQW laser emitting at 1.54 mu m on a Si substrate at room temperature

1991 ◽  
Vol 38 (12) ◽  
pp. 2692
Author(s):  
M. Sugo ◽  
H. Mori ◽  
Y. Itoh ◽  
Y. Sakai ◽  
M. Tachikawa
Keyword(s):  
Room Temperature ◽  
Si Substrate ◽  
Cw Operation

Characteristics of Mocvd-Grown AlGaAs/GaAs Sqw Lasers and GaAs Mesfetsfabrication on Si Substrate with SiO2-Back Coating

1990 ◽  
Vol 198 ◽  
Author(s):  
Takashi Egawa ◽  
Hitoshi Tada ◽  
Yasufumi Kobayashi ◽  
Shinji Nozaki ◽  
Tetsuo Soga ◽  
...  
Keyword(s):  
Electron Concentration ◽  
Thermal Cycle ◽  
Room Temperature ◽  
Threshold Current ◽  
Gaas Layer ◽  
Si Substrate ◽  
Thermal Cycle Annealing ◽  
Cw Operation ◽  
Lower Background ◽  
Undoped Gaas

ABSTRACTWe discuss room temperature CW operation of AlGaAs/GaAs SQW lasers and GaAs MESFETs with good pinch-off characteristic on SiO2 -back coated Si. The all-MOCVD-grown,SQW laser on Si with thermal-cycle annealing, which has the EPD of 1.5 × 107 cm−2, has the threshold current as low as 55 mA (1.41 kA/cm2) under CW operation at room temperature. The pinch-off and the sidegating effect characteristics of GaAs MESFETs on Si have been improved by using SiO2-back coating of Si and higher growth temperature. The maximum transconductance of 160 mS/mm has been obtained for the MESFET with a 2.5 × 15 µm gate. The main origin of sidegating effect associates with the channel layer-undoped GaAs layer beneath it interface. The SiO2 -back coating is found effective to obtain a lower background electron concentration in undoped GaAs layer and to control doping of the active layer in GaAs/Si.

Room-Temperature CW Operation of SQW Lasers on Si Grown with AiGaAs/AlGaP Intermediate Layers by MoCVD

1991 ◽  
Vol 228 ◽  
Author(s):  
T. Egawa ◽  
Y. Hayashi ◽  
T. George ◽  
T. Soga ◽  
T. Jimbo ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Room Temperature ◽  
Threshold Current ◽  
Threshold Current Density ◽  
Si Substrate ◽  
Si Substrates ◽  
Grown Sample ◽  
Cw Operation ◽  
Intermediate Layers ◽  
Dimensional Growth

ABSTRACTThe heterointerfaces of single quantum wells (SQWs) and the characteristics of SQW lasers on Si substrates grown with Al0.5 Ga0 5As/Al0.55Ga0.45P intermediate layers (AlGaAs/AlGaP ILs) entirely by MOCVD are reported. The surface morphology and the heterointerfaces of SQWs grown on Si substrates with the AlGaAs/AlGaP ILs are smoother than those of the two-step-grown sample. The two-dimensional growth of the AlGaAs/AlGaP ILs on a Si substrate contributes to obtain the smooth heterointerface. The excellent lasing characteristics are obtained by the AlGaAs/AlGaP ILs, which are caused by the smooth heterointerfaces. The lasers grown with the AlGaAs/AlGaP ILs show the averaged threshold current density of 1.83 kA/cm2 and the averaged differential quantum efficiency of 51.9 % under cw condition at room temperature.

A crystallographic analysis of the CoSi/Si(111) interface using Transmission Electron Microscopy

1990 ◽  
Vol 48 (4) ◽  
pp. 574-575
Author(s):  
A.C. Daykin ◽  
C.J. Kiely ◽  
R.C. Pond ◽  
J.L. Batstone
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Defect Structure ◽  
Room Temperature ◽  
Theoretical Method ◽  
Crystallographic Analysis ◽  
Si Substrate ◽  
Transmission Electron ◽  
Theoretical Predictions

When CoSi2 is grown onto a Si(111) surface it can form in two distinct orientations. A-type CoSi2 has the same orientation as the Si substrate and B-type is rotated by 180° degrees about the [111] surface normal.One method of producing epitaxial CoSi2 is to deposit Co at room temperature and anneal to 650°C.If greater than 10Å of Co is deposited then both A and B-type CoSi2 form via a number of intermediate silicides .The literature suggests that the co-existence of A and B-type CoSi2 is in some way linked to these intermediate silicides analogous to the NiSi2/Si(111) system. The phase which forms prior to complete CoSi2 formation is CoSi. This paper is a crystallographic analysis of the CoSi2/Si(l11) bicrystal using a theoretical method developed by Pond. Transmission electron microscopy (TEM) has been used to verify the theoretical predictions and to characterise the defect structure at the interface.

Characterization of the order-annealing response of nanostructured iron-palladium based ferromagnetic thin-films

2001 ◽  
Vol 703 ◽  
Author(s):  
Huiping Xu ◽  
Adam T. Wise ◽  
Timothy J. Klemmer ◽  
Jörg M. K. Wiezorek
Keyword(s):  
Thin Films ◽  
Grain Growth ◽  
Room Temperature ◽  
Si Substrate ◽  
Ferromagnetic Thin Films ◽  
Precipitation Reactions ◽  
Post Deposition ◽  
Xrd And Tem ◽  
Iron Palladium

ABSTRACTA combination of XRD and TEM techniques have been used to characterize the response of room temperature magnetron sputtered Fe-Pd thin films on Si-susbtrates to post-deposition order-annealing at temperatures between 400-500°C. Deposition produced the disordered Fe-Pd phase with (111)-twinned grains approximately 18nm in size. Ordering occurred for annealing at 450°C and 500°C after 1.8ks, accompanied by grain growth (40-70nm). The ordered FePd grains contained (111)-twins rather than {101}-twins typical of bulk ordered FePd. The metallic overlayers and underlayers selected here produced detrimental dissolution (Pt into Fe-Pd phases) and precipitation reactions between Pd and the Si substrate.

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