Room temperature CW operation of 1.3um quantum dot lasers on a Si substrate by Pd-mediated wafer bonding

2015 ◽  
Author(s):  
Zihao Wang ◽  
Stefan Preble ◽  
Chi-sen Lee ◽  
Wei Guo
Keyword(s):  
Quantum Dot ◽  
Wafer Bonding ◽  
Room Temperature ◽  
Quantum Dot Lasers ◽  
Si Substrate ◽  
Cw Operation

scholarly journals Electrically pumped 13 μm room-temperature InAs/GaAs quantum dot lasers on Si substrates by metal-mediated wafer bonding and layer transfer

2010 ◽  
Vol 18 (10) ◽  
pp. 10604 ◽  
Author(s):  
Katsuaki Tanabe ◽  
Denis Guimard ◽  
Damien Bordel ◽  
Satoshi Iwamoto ◽  
Yasuhiko Arakawa
Keyword(s):  
Quantum Dot ◽  
Wafer Bonding ◽  
Room Temperature ◽  
Quantum Dot Lasers ◽  
Layer Transfer ◽  
Si Substrates ◽  
Electrically Pumped ◽  
Gaas Quantum Dot

Room temperature CW operation at the ground state of self-formed quantum dot lasers with multi-stacked dot layer

1996 ◽  
Vol 32 (21) ◽  
pp. 2023 ◽  
Author(s):  
H. Shoji ◽  
Y. Nakata ◽  
K. Mukai ◽  
Y. Sugiyama ◽  
M. Sugawara ◽  
...  
Keyword(s):  
Quantum Dot ◽  
Ground State ◽  
Room Temperature ◽  
Quantum Dot Lasers ◽  
Cw Operation

High performance InAs quantum dot lasers on silicon substrates by low temperature Pd-GaAs wafer bonding

2015 ◽  
Vol 107 (26) ◽  
pp. 261107 ◽  
Author(s):  
Zihao Wang ◽  
Ruizhe Yao ◽  
Stefan F. Preble ◽  
Chi-Sen Lee ◽  
Luke F. Lester ◽  
...  
Keyword(s):  
Low Temperature ◽  
Quantum Dot ◽  
Wafer Bonding ◽  
High Performance ◽  
Silicon Substrates ◽  
Quantum Dot Lasers ◽  
Gaas Wafer ◽  
Inas Quantum Dot
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