Nucleation and Growth in Vicinity of Growing Surface in Making Microcrystalline Silicon

1990 ◽  
Vol 192 ◽  
Author(s):  
Masami Nakata ◽  
Tatsuru Namikawa ◽  
Hajime Shirai ◽  
Jun-ichi Hanna ◽  
Isamu Shimizu
Keyword(s):  
Substrate Temperature ◽  
Gas Phase ◽  
Atomic Hydrogen ◽  
Nucleation And Growth ◽  
Microcrystalline Silicon ◽  
Gas Phase Reactions ◽  
Plasma Enhanced Cvd ◽  
Close Study

ABSTRACTA close study was conducted on microcrystalline Silicon (μc-Si) prepared by PE-CVD (Plasma Enhanced CVD) from SiF4 with the assistance of atomic hydrogen. The atomic hydrogen played a major role in either making precursors, SiFnHm (n+m=3), by gas phase reactions with the fragments, SiFn (≤3), or constructing Si-network in the vicinity of the growing surface. Proper conditions of nucleation were markedly different from those of growth with respect to parameters, flow of atomic hydrogen and substrate temperature.

scholarly journals Impact of secondary gas-phase reactions on microcrystalline silicon solar cells deposited at high rate

2010 ◽  
Vol 96 (23) ◽  
pp. 233508 ◽  
Author(s):  
G. Parascandolo ◽  
R. Bartlome ◽  
G. Bugnon ◽  
T. Söderström ◽  
B. Strahm ◽  
...  
Keyword(s):  
Solar Cells ◽  
Gas Phase ◽  
High Rate ◽  
Silicon Solar Cells ◽  
Microcrystalline Silicon ◽  
Gas Phase Reactions

Simulation of gas phase reactions for microcrystalline silicon films fabricated by PECVD

2011 ◽  
Vol 7 (3) ◽  
pp. 198-201
Author(s):  
Bao-hua He ◽  
Shi-e Yang ◽  
Yong-sheng Chen ◽  
Jing-xiao Lu
Keyword(s):  
Gas Phase ◽  
Silicon Films ◽  
Microcrystalline Silicon ◽  
Gas Phase Reactions

SiS formation via gas phase reactions between atomic silicon and sulphur-bearing species

2020 ◽  
Vol 493 (1) ◽  
pp. 299-304 ◽  
Author(s):  
Mateus A M Paiva ◽  
Bertrand Lefloch ◽  
Breno R L Galvão
Keyword(s):  
Activation Energy ◽  
Gas Phase ◽  
Atomic Hydrogen ◽  
Energy Surface ◽  
Main Reaction ◽  
Interaction Method ◽  
Gas Phase Reactions ◽  
Configuration Interaction Method ◽  
Explicit Correlation ◽  
No Activation

ABSTRACT The potential energy surface for the Si + SH and Si + SH2 reactions is explored using the highly accurate explicit correlation multireference configuration interaction method. For atomic silicon colliding with SH, SiS + H is predicted to be the main reaction channel with no activation energy. The reaction Si + SH2 → SiS + H2 is found to be largely thermodynamically favourable, but likely to be slow, due to its spin forbidden nature. Several details on possible mechanisms are evaluated, and implications for astrochemical models are discussed. Among other results, we show that SiS is stable towards collisions with H and H2, and that the HSiS molecule will quickly be converted to SiS in collisons with atomic hydrogen.

Atomic Layer Deposition of Ta2O5 Films Using Ta(OC2H5)5 and Nh3

1999 ◽  
Vol 567 ◽  
Author(s):  
Hyun-Jung Song ◽  
Wonyong Koh ◽  
Sang-Won Kang
Keyword(s):  
Substrate Temperature ◽  
Gas Phase ◽  
Film Growth ◽  
Tantalum Oxide ◽  
Chemical Vapor ◽  
Atomic Layer ◽  
Rapid Thermal Process ◽  
Gas Phase Reactions ◽  
Layer Deposition ◽  
Deposited Films

ABSTRACTTantalum oxide films were grown by chemical vapor deposition using an alternating supply of tantalum pentaethoxide and ammonia. The supply of one source was followed by a purge with argon gas before introducing the other source onto the substrate in order to prevent gas-phase reactions. At substrate temperature between 250-275 °C the film growth depended only on the number of source supply cycles (0.15 nm/cycle) and did not depend on the substrate temperature nor supply time of the sources. As-deposited films were amorphous, however, were crystallized after annealing at 800 °C in oxygen atmosphere by rapid thermal process. Annealed films showed increased dielectric constant and decreased leakage current density, which were 13.3 and 6.6 μA/cm2 at 1 MV/cm, respectively, for a 15-nm-thick film after annealing at 800 °C for 10 minutes.

scholarly journals Material properties and growth process of microcrystalline silicon with growth rates in excess of 1 nm/s

2001 ◽  
Vol 664 ◽  
Author(s):  
E.A.G. Hamers ◽  
A.H.M. Smets ◽  
C. Smit ◽  
J.P.M. Hoefnagels ◽  
W.M.M. Kessels ◽  
...  
Keyword(s):  
Gas Phase ◽  
Material Properties ◽  
Atomic Hydrogen ◽  
Growth Process ◽  
Dark Conductivity ◽  
Microcrystalline Silicon ◽  
Hydrogen Flux ◽  
Typical Material ◽  
Crystallite Sizes ◽  
20 Nm

ABSTRACTThe expanding thermal plasma (ETP) has been used to deposit microcrystalline silicon (µc-Si:H) with rates up to 2.7 nm/s. Typical material properties of well crystallised material are crystallite sizes of 20 nm, photo- and dark conductivity of 2×10−5 and 2x10−7 S/cm respectively, and an activation energy of 600 meV. The radical densities of SiH3, SiH, and Si present in the gas phase have been quantified. In conditions where [.proportional µc-Si:H is deposited the atomic hydrogen flux towards the surface is of the same magnitude or higher as the flux of deposited radicals. Furthermore, the abundance of radicals such as SiH and Si is large and may contribute several tens of percent to the deposition rate.

Gas-Phase Reactions

1981 ◽  
Author(s):  
Victor N. Kondratiev ◽  
Evgeniĭ E. Nikitin
Keyword(s):  
Gas Phase ◽  
Gas Phase Reactions

Influence of Gas Mixing and Heating on Gas-Phase Reactions in GaN MOCVD Growth

2012 ◽  
Vol 1 (1) ◽  
pp. P46-P53 ◽  
Author(s):  
Ran Zuo ◽  
Haiqun Yu ◽  
Nan Xu ◽  
Xiaokun He
Keyword(s):  
Gas Phase ◽  
Gas Mixing ◽  
Gas Phase Reactions ◽  
Mocvd Growth

Gas Phase Reactions Activated by Nuclear Processes

1957 ◽  
Vol 79 (17) ◽  
pp. 4609-4616 ◽  
Author(s):  
Adon A. Gordus ◽  
John E. Willard
Keyword(s):  
Gas Phase ◽  
Gas Phase Reactions ◽  
Nuclear Processes
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