Atomic Layer Deposition of Ta2O5 Films Using Ta(OC2H5)5 and Nh3

1999 ◽  
Vol 567 ◽  
Author(s):  
Hyun-Jung Song ◽  
Wonyong Koh ◽  
Sang-Won Kang
Keyword(s):  
Substrate Temperature ◽  
Gas Phase ◽  
Film Growth ◽  
Tantalum Oxide ◽  
Chemical Vapor ◽  
Atomic Layer ◽  
Rapid Thermal Process ◽  
Gas Phase Reactions ◽  
Layer Deposition ◽  
Deposited Films

ABSTRACTTantalum oxide films were grown by chemical vapor deposition using an alternating supply of tantalum pentaethoxide and ammonia. The supply of one source was followed by a purge with argon gas before introducing the other source onto the substrate in order to prevent gas-phase reactions. At substrate temperature between 250-275 °C the film growth depended only on the number of source supply cycles (0.15 nm/cycle) and did not depend on the substrate temperature nor supply time of the sources. As-deposited films were amorphous, however, were crystallized after annealing at 800 °C in oxygen atmosphere by rapid thermal process. Annealed films showed increased dielectric constant and decreased leakage current density, which were 13.3 and 6.6 μA/cm2 at 1 MV/cm, respectively, for a 15-nm-thick film after annealing at 800 °C for 10 minutes.

scholarly journals Properties and Mechanism of PEALD-In2O3 Thin Films Prepared by Different Precursor Reaction Energy

Nanomaterials ◽  
2021 ◽  
Vol 11 (4) ◽  
pp. 978
Author(s):  
Ming-Jie Zhao ◽  
Zhi-Xuan Zhang ◽  
Chia-Hsun Hsu ◽  
Xiao-Ying Zhang ◽  
Wan-Yu Wu ◽  
...  
Keyword(s):  
Growth Rate ◽  
Substrate Temperature ◽  
Film Growth ◽  
Atomic Layer ◽  
Amorphous Structure ◽  
Reaction Energy ◽  
Film Growth Rate ◽  
In2o3 Film ◽  
Intermediate Temperature Range ◽  
Layer Deposition

Indium oxide (In2O3) film has excellent optical and electrical properties, which makes it useful for a multitude of applications. The preparation of In2O3 film via atomic layer deposition (ALD) method remains an issue as most of the available In-precursors are inactive and thermally unstable. In this work, In2O3 film was prepared by ALD using a remote O2 plasma as oxidant, which provides highly reactive oxygen radicals, and hence significantly enhancing the film growth. The substrate temperature that determines the adsorption state on the substrate and reaction energy of the precursor was investigated. At low substrate temperature (100–150 °C), the ratio of chemically adsorbed precursors is low, leading to a low growth rate and amorphous structure of the films. An amorphous-to-crystalline transition was observed at 150–200 °C. An ALD window with self-limiting reaction and a reasonable film growth rate was observed in the intermediate temperature range of 225–275 °C. At high substrate temperature (300–350 °C), the film growth rate further increases due to the decomposition of the precursors. The resulting film exhibits a rough surface which consists of coarse grains and obvious grain boundaries. The growth mode and properties of the In2O3 films prepared by plasma-enhanced ALD can be efficiently tuned by varying the substrate temperature.

scholarly journals Surface Ligand Removal in Atomic Layer Deposition of GaN Using Triethylgallium

2020 ◽  
Author(s):  
Petro Deminskyi ◽  
Chih-Wei Hsu ◽  
Babak Bakhit ◽  
Polla Rouf ◽  
Henrik Pedersen
Keyword(s):  
Atomic Layer Deposition ◽  
Film Growth ◽  
Chemical Vapor ◽  
Atomic Layer ◽  
Amorphous Films ◽  
Ammonia Plasma ◽  
Layer Deposition ◽  
Surface Ligand ◽  
Reactive Pulse

Gallium nitride (GaN) is one of the most important semiconductor materials in modern electronics. While GaN films are routinely deposited by chemical vapor deposition at around 1000 °C, low-temperature routes for GaN deposition need to be better understood. Herein, we present an atomic layer deposition (ALD) process for GaN-based on triethyl gallium (TEG) and ammonia plasma and show that the process can be improved by adding a reactive pulse between the TEG and ammonia plasma, making it an ABC-type pulsed process. We show that the material quality of the deposited GaN is not affected by the B-pulse, but that the film growth per ALD cycle increase when a B-pulse is added. We suggest that this can be explained by removal of ethyl ligands from the surface by the B-pulse, enabling a more efficient nitridation by the ammonia plasma. We show that the B-pulsing can be used to enable GaN deposition with a thermal ammonia pulse, albeit of X-ray amorphous films.

Chemical Vapor Deposition of Ti-Si-N Films with Alternating Source Supply

1999 ◽  
Vol 564 ◽  
Author(s):  
Jae-Sik Min ◽  
Hyung-Sang Park ◽  
Wonyong Koh ◽  
Sang-Won Kang
Keyword(s):  
Atomic Layer Deposition ◽  
Film Growth ◽  
Chemical Vapor ◽  
Atomic Layer ◽  
Precise Control ◽  
Silicon Nitride Films ◽  
Layer Deposition ◽  
Si Content ◽  
Titanium Silicon Nitride ◽  
Titanium Silicon

AbstractTitanium-silicon-nitride films were grown by atomic layer deposition using an alternating supply of tetrakis(dimethylamido)titanium (TDMAT), silane. and ammonia, at substrate temperature of 180°C. The supply of a reactant was followed by a purge with inert gas before introducing another reactant onto the substrate in order to prevent gas-phase reactions. In one set of experiments the reactants were supplied separately in the sequence of TDMAT. silane. and ammonia. The Si content of the films remained constant at 18 at.%. and the film growth rate varied little from 0.24 nm per reactant-supply-cycle, even though silane partial pressure varied from 0.002 to 0.1 torr. In the other set of experiments silane and ammonia were simultaneously supplied in the sequence of TDMAT and silane/ammonia. The Si content varied from 3 to 23 at.% as the silane-to-ammonia ratio varied from 0.01 to 10. Atomic layer deposition of Ti-Si-N films allows the precise control of Si content as well as film thickness.

scholarly journals Plasma Enhanced Atomic Layer Deposition of Ruthenium Films Using Ru(EtCp)2 Precursor

Coatings ◽  
2021 ◽  
Vol 11 (2) ◽  
pp. 117
Author(s):  
Alexander Rogozhin ◽  
Andrey Miakonkikh ◽  
Elizaveta Smirnova ◽  
Andrey Lomov ◽  
Sergey Simakin ◽  
...  
Keyword(s):  
Surface Roughness ◽  
Atomic Layer Deposition ◽  
Substrate Temperature ◽  
Secondary Ion Mass Spectrometry ◽  
Film Growth ◽  
Atomic Layer ◽  
Grazing Incidence ◽  
Force Microscopy ◽  
Si Substrates ◽  
Layer Deposition

Ruthenium thin films were deposited by plasma-enhanced atomic layer deposition (PEALD) technology using Ru(EtCp)2 and oxygen plasma on the modified surface of silicon and SiO2/Si substrates. The crystal structure, chemical composition, and morphology of films were characterized by grazing incidence XRD (GXRD), secondary ion mass spectrometry (SIMS), and atomic force microscopy (AFM) techniques, respectively. It was found that the mechanism of film growth depends crucially on the substrate temperature. The GXRD and SIMS analysis show that at substrate temperature T = 375 °C, an abrupt change in surface reaction mechanisms occurs, leading to the changing in film composition from RuO2 at low temperatures to pure Ru film at higher temperatures. It was confirmed by electrical resistivity measurements for Ru-based films. Mechanical stress in the films was also analyzed, and it was suggested that this factor increases the surface roughness of growing Ru films. The lowest surface roughness ~1.5 nm was achieved with a film thickness of 29 nm using SiO2/Si-substrate for deposition at 375 °C. The measured resistivity of Ru film is 18–19 µOhm·cm (as deposited).

scholarly journals Surface Ligand Removal in Atomic Layer Deposition of GaN Using Triethylgallium

2020 ◽  
Author(s):  
Petro Deminskyi ◽  
Chih-Wei Hsu ◽  
Babak Bakhit ◽  
Polla Rouf ◽  
Henrik Pedersen
Keyword(s):  
Atomic Layer Deposition ◽  
Film Growth ◽  
Chemical Vapor ◽  
Atomic Layer ◽  
Amorphous Films ◽  
Ammonia Plasma ◽  
Layer Deposition ◽  
Surface Ligand ◽  
Reactive Pulse

Gallium nitride (GaN) is one of the most important semiconductor materials in modern electronics. While GaN films are routinely deposited by chemical vapor deposition at around 1000 °C, low-temperature routes for GaN deposition need to be better understood. Herein, we present an atomic layer deposition (ALD) process for GaN-based on triethyl gallium (TEG) and ammonia plasma and show that the process can be improved by adding a reactive pulse between the TEG and ammonia plasma, making it an ABC-type pulsed process. We show that the material quality of the deposited GaN is not affected by the B-pulse, but that the film growth per ALD cycle increase when a B-pulse is added. We suggest that this can be explained by removal of ethyl ligands from the surface by the B-pulse, enabling a more efficient nitridation by the ammonia plasma. We show that the B-pulsing can be used to enable GaN deposition with a thermal ammonia pulse, albeit of X-ray amorphous films.

An Investigation of Silicon Oxide Thin Film by Atomic Layer Deposition

2004 ◽  
Vol 808 ◽  
Author(s):  
Joo-Hyeon Lee ◽  
Chang-Hee Han ◽  
Un-Jung Kim ◽  
Chong-Ook Park ◽  
Sa-Kyun Rha ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Silicon Oxide ◽  
Chemical Vapor ◽  
Atomic Layer ◽  
Oxide Thin Film ◽  
Layer Deposition ◽  
P Type ◽  
Wet Etch ◽  
Deposited Film ◽  
Deposited Films

ABSTRACTSiO2 thin films were prepared on p-type Si (100) substrates by atomic layer deposition (ALD) using SiH2Cl2 and O3(1.5 at.%)/O2 as precursors at 300. The growth rate of the deposited films increased linearly with increasing amount of simultaneous SiH2Cl2 and O3 exposures, and was saturated at about 0.35 nm/cycle with the reactant exposures of more than 3.6×109L. A larger amount of O3/O2 than that of SiH2Cl2 was required to obtain a saturated deposition reaction. The composition of the deposited film also varied with O3/O2 exposure at a fixed SiH2Cl2 exposure. The Si/O ratio gradually decreased to 0.5 with increasing amount of O3/O2 exposure. Finally, we also compared the physical and electrical characteristics of the ALD films with those of the films deposited by conventional chemical vapor deposition (CVD) methods. In spite of low process temperature, the SiO2 film prepared by the ALD method was in wet etch rate, surface roughness, leakage current and breakdown voltage superior to that by other several CVD methods.

Atomic Layer Deposition of Chalcogenides for Next-Generation Phase Change Memory

2021 ◽  
Author(s):  
Yoon Kyeung Lee ◽  
Chanyoung Yoo ◽  
Woohyun Kim ◽  
Jeongwoo Jeon ◽  
Cheol Seong Hwang
Keyword(s):  
Thin Film ◽  
Atomic Layer Deposition ◽  
Film Growth ◽  
Phase Change Memory ◽  
Film Surface ◽  
Atomic Layer ◽  
Thin Film Growth ◽  
Growth Technique ◽  
Layer Deposition ◽  
Change Memory

Atomic layer deposition (ALD) is a thin film growth technique that uses self-limiting, sequential reactions localized at the growing film surface. It guarantees exceptional conformality on high-aspect-ratio structures and controllability...

scholarly journals 2D Semiconductor Nanomaterials and Heterostructures: Controlled Synthesis and Functional Applications

2021 ◽  
Vol 16 (1) ◽  
Author(s):  
Hongyan Xu ◽  
Mohammad Karbalaei Akbari ◽  
Serge Zhuiykov
Keyword(s):  
Liquid Metals ◽  
Chemical Vapor ◽  
Atomic Layer ◽  
First Century ◽  
2D Semiconductors ◽  
Layer Deposition ◽  
Semiconductor Nanomaterials ◽  
2D Nanomaterials ◽  
Novel Applications ◽  
Electronic Technologies

AbstractTwo-dimensional (2D) semiconductors beyond graphene represent the thinnest stable known nanomaterials. Rapid growth of their family and applications during the last decade of the twenty-first century have brought unprecedented opportunities to the advanced nano- and opto-electronic technologies. In this article, we review the latest progress in findings on the developed 2D nanomaterials. Advanced synthesis techniques of these 2D nanomaterials and heterostructures were summarized and their novel applications were discussed. The fabrication techniques include the state-of-the-art developments of the vapor-phase-based deposition methods and novel van der Waals (vdW) exfoliation approaches for fabrication both amorphous and crystalline 2D nanomaterials with a particular focus on the chemical vapor deposition (CVD), atomic layer deposition (ALD) of 2D semiconductors and their heterostructures as well as on vdW exfoliation of 2D surface oxide films of liquid metals.

Sign in / Sign up

Export Citation Format

Share Document