Laser Deposited Cubic Boron Nitride Films

1990 ◽  
Vol 191 ◽  
Author(s):  
Gary L. Doll ◽  
Jeffrey A. Sell ◽  
Lourdes Salamanca-riba ◽  
Ashwin K. Ballal
Keyword(s):  
Electron Microscopy ◽  
Boron Nitride ◽  
Hexagonal Boron Nitride ◽  
Cubic Boron Nitride ◽  
Emission Spectra ◽  
Optical Emission ◽  
Film Deposition ◽  
X Ray Diffraction ◽  
Transmission Electron ◽  
Boron Nitride Films

ABSTRACTWe report the successful growth of cubic boron nitride thin films on single crystal 100 silicon by using pulsed excimer laser ablation of a hexagonal boron nitride bulk target. Optical emission spectra were obtained during the film deposition giving insight into the deposition mechanism. The deposited films were characterized by transmission electron microscopy, scanning electron microscopy, optical microscopy, x-ray diffraction, and Auger electron microscopy. Regions of the films were found to exhibit epitaxy with the substrate.

X-Ray Diffraction Study of Cubic Boron Nitride Grown Epitaxially on Silicon

1990 ◽  
Vol 202 ◽  
Author(s):  
G. L. Doll ◽  
J. A. Sell ◽  
A. Wims ◽  
C. A. Taylor ◽  
R. Clarke
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Boron Nitride ◽  
Cubic Boron Nitride ◽  
X Ray Diffraction ◽  
X Ray ◽  
Lattice Matching ◽  
Excimer Laser Ablation ◽  
Transmission Electron ◽  
Boron Nitride Films

ABSTRACTWe report the growth of boron nitride films on (001), (110), and (111) faces of silicon using the method of pulsed excimer laser ablation. The structure of the Alms grown on the (001) and (110) orientations of Si is cubic zincblende with a lattice constant of 3.619 Å. The films were found to be heteroepitaxial on silicon (001) with the cubic BN (100) axes parallel to Si (100), as characterized by x-ray diffraction and high-resolution transmission electron microscopy. In that system, we find evidence for an unusual 3:2 commensurate lattice matching. The films appear to cubic but randomly oriented on the Si (110), and no evidence for crystallinity is found for films grown on Si (111).

scholarly journals Catalyst-Free Bottom-Up Synthesis of Few-Layer Hexagonal Boron Nitride Nanosheets

2015 ◽  
Vol 2015 ◽  
pp. 1-8 ◽  
Author(s):  
Shena M. Stanley ◽  
Amartya Chakrabarti ◽  
Joshua J. DeMuth ◽  
Vanessa E. Tempel ◽  
Narayan S. Hosmane
Keyword(s):  
Electron Microscopy ◽  
Boron Nitride ◽  
Hexagonal Boron Nitride ◽  
X Ray Diffraction ◽  
Bottom Up ◽  
X Ray ◽  
Boron Nitride Nanosheets ◽  
Catalyst Free ◽  
Transmission Electron ◽  
Novel Catalyst

A novel catalyst-free methodology has been developed to prepare few-layer hexagonal boron nitride nanosheets using a bottom-up process. Scanning electron microscopy and transmission electron microscopy (both high and low resolution) exhibit evidence of less than ten layers of nanosheets with uniform dimension. X-ray diffraction pattern and other additional characterization techniques prove crystallinity and purity of the product.

Microcrystalline Cubic Boron Nitride/Amorphous Hydrogenated Boron Nitride Mixed Phase Thin Films

1994 ◽  
Vol 358 ◽  
Author(s):  
Shu-Han Lin ◽  
Bernard J. Feldman
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Boron Nitride ◽  
Hexagonal Boron Nitride ◽  
Cubic Boron Nitride ◽  
Mixed Phase ◽  
Good Adhesion ◽  
Transmission Electron ◽  
Plasma Decomposition ◽  
Absorption Measurements

ABSTRACTTransparent and insulating thin films have been grown by the plasma decomposition of B2H6, NH3, and H2, at a substrate temperature of 250°C. From chemical composition, transmission electron microscopy, infrared absorption, and optical absorption measurements, the thin films are determined to be a mixed phase of crystalline cubic boron nitride and amorphous hydrogenated boron nitride. Also, the films have significantly more boron than nitrogen, a large concentration of hydrogen, a very large bandgap, strong infrared aborption due to both hexagonal boron nitride and boron icosahedra, and good adhesion to various substrates.

scholarly journals High-Yield Synthesis of Cubic and Hexagonal Boron Nitride Nanoparticles by Laser Chemical Vapor Decomposition of Borazine

2013 ◽  
Vol 2013 ◽  
pp. 1-5 ◽  
Author(s):  
A. Hidalgo ◽  
V. Makarov ◽  
G. Morell ◽  
B. R. Weiner
Keyword(s):  
Electron Microscopy ◽  
Boron Nitride ◽  
Hexagonal Boron Nitride ◽  
Chemical Vapor ◽  
High Yield ◽  
X Ray Diffraction ◽  
Transmission Electron ◽  
Chemical Vapor Decomposition ◽  
Electron Energy Loss ◽  
Bn Nanostructures

We report a new method for the synthesis of boron nitride nanostructures (nBN) using laser chemical vapor decomposition (LCVD). Borazine was used as precursor and excited with two simultaneous radiations, the fundamental and second YAG laser harmonics. If only one of the two radiations is employed, no reaction takes place. Abundant BN powder is obtained after one hour of laser radiation. The BN yield obtained with the LCVD technique is about 83% by weight. The BN material was characterized using scanning electron microscopy, transmission electron microscopy, electron energy loss spectroscopy, Raman spectroscopy, Fourier transform infrared spectroscopy, and X-ray diffraction. They all indicate that the BN powder consists of a mixture of hexagonal and cubic BN nanostructures. No other BN phases or stoichiometries were found. The size of the resulting BN nanostructures is in the range of 20–100 nm and their B : N composition is 1 : 1. A simplified mechanism involving laser-excited states followed by photoinduced removal of hydrogen is proposed to understand the synthesis of BN nanopowder by LCVD of borazine.

scholarly journals Получение гетерогенных наночастиц Al/BN в микроволновой плазме

2020 ◽  
Vol 46 (10) ◽  
pp. 25
Author(s):  
Ш. Корте ◽  
М.К. Кутжанов ◽  
А.М. Ковальский ◽  
А.С. Конопацкий ◽  
Д.Г. Квашнин ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Boron Nitride ◽  
Microwave Plasma ◽  
Hexagonal Boron Nitride ◽  
Shear Stresses ◽  
X Ray Diffraction ◽  
Short Term ◽  
X Ray ◽  
Transmission Electron

In this work, the interaction of a mixture of Al and BN nanopowder with hydrogen microwave plasma was studied. Using X-ray diffraction analysis, scanning and transmission electron microscopy, the formation of AlN and AlB2 nanocrystals as a result of short-term (~ 30 ms) interaction of Al vapor with h-BN was established. Obtained results also indicate the formation of hydrogenated hexagonal boron nitride h-BN-H. The critical shear stresses were calculated for the interfaces between BN and Al, AlB2, and AlN. Approaches for increasing the strength of the composite materials based on hexagonal boron nitride and aluminum are discussed.

Cathodoluminescence Spectroscopy of Boron Nitride Films

1994 ◽  
Vol 339 ◽  
Author(s):  
C. A. Taylor ◽  
S. W. Brown ◽  
V. Subramaniam ◽  
S. Kidner ◽  
S. C. Rand ◽  
...  
Keyword(s):  
Boron Nitride ◽  
Deep Level ◽  
Hexagonal Boron Nitride ◽  
Cubic Boron Nitride ◽  
Emission Spectra ◽  
Growth Conditions ◽  
Ion Source ◽  
Substrate Bias Voltage ◽  
Cathodoluminescence Spectroscopy ◽  
Boron Nitride Films

ABSTRACTWe report results from cathodoluminescence spectroscopy of boron nitride films grown on Si (100) substrates by ECR ion source assisted magnetron sputtering of a hexagonal BN target. Three main peaks are observed in the near-bandgap region for hexagonal boron nitride films at energies of 4.90 eV, 5.31 eV, and 5.50 eV. In addition, deep-level emission spectra of predominantly cubic boron nitride films are correlated with sample growth conditions. In particular we show that the emission intensity, position, and linewidth are strongly dependent on the substrate bias voltage used during sample growth.

scholarly journals Nucleation and Growth of Cubic Boron Nitride Films Produced by Ion-Assisted Pulsed Laser Deposition

1993 ◽  
Vol 316 ◽  
Author(s):  
T. A. Friedmann ◽  
D. L. Medlin ◽  
P. B. Mirkarimi ◽  
K. F. McCarty ◽  
E. J. Klaus ◽  
...  
Keyword(s):  
Boron Nitride ◽  
Growth Parameters ◽  
Cubic Boron Nitride ◽  
Ion Source ◽  
Growth Time ◽  
Grain Sizes ◽  
Selected Area Electron Diffraction ◽  
Transmission Electron ◽  
Parametric Studies ◽  
Boron Nitride Films

ABSTRACTWe are studying the boron nitride system by using a pulsed excimer laser to ablate from hexagonal BN (hBN) targets to form cubic BN (cBN) films. We are depositing BN films on heated (25 - 800°C) Si (100) surfaces and are using a broad-beam ion source operated with Ar and N2 source gasses to produce BN films with a high percentage of sp3-bonded cBN. In order to understand and optimize the growth and nucleation of cBN films, parametric studies of the growth parameters have been performed. The best films to date show >85% sp3-bonded BN as determined from Fourier-transform infrared (FTIR) reflection spectroscopy. High resolution transmission electron microscopy (TEM) and selected area electron diffraction confirm the presence of cBN in these samples. The films are polycrystalline and show grain sizes up to 30- 40 nm. We find from both the FTIR and TEM analyses that the cBN content in these films evolves with growth time. Initially, the films are deposited as hBN and the cBN nucleates on this hBN underlayer. Importantly, the position of the cBN IR phonon also changes with growth time. Initially this mode appears near 1130 cm-1 and the position decreases with growth time to a constant value of 1085 cm-1. Since in bulk cBN this IR mode appears at 1065 cm-1, a large compressive stress induced by the ion bombardment is suggested. In addition, we report on the variation in cBN percentage with temperature.

Boron Nitride Nanotubes: Nanoparticles Functionalization and Junction Fabrication

2007 ◽  
Vol 7 (2) ◽  
pp. 530-534 ◽  
Author(s):  
Chunyi Zhi ◽  
Yoshio Bando ◽  
Guozhen Shen ◽  
Chengchun Tang ◽  
Dmitri Golberg
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Boron Nitride ◽  
Boron Nitride Nanotubes ◽  
X Ray Diffraction ◽  
Carbon Nanostructure ◽  
Wet Chemistry ◽  
X Ray ◽  
Transmission Electron ◽  
First Time

Adopting a wet chemistry method, Au and Fe3O4 nanoparticles were functionalized on boron nitride nanotubes (BNNTs) successfully for the first time. X-ray diffraction pattern and transmission electron microscopy were used to characterize the resultant products. Subsequently, a method was proposed to fabricate heterojunction structures based on the particle-functionalized BNNTs. As a demonstration, BNNT-carbon nanostructure, BNNT-ZnO and BNNT-Ga2O3 junctions were successfully fabricated using the functionalized particles as catalysts.

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